Abstract: A semiconductor device has a first transistor of a first conductivity type and a second transistor of a second conductivity type, the first transistor is arranged in an active region of a semiconductor substrate, and a gate electrode and the active region overlap with each other in a plan view and also have a portion located between the source and the drain of the first transistor of the semiconductor substrate. In the channel width direction, an impurity concentration of the second conductivity type is higher at the end than on the center side of the portion.

Abstract: A unit circuit includes a photoelectric conversion element, an output transistor including an input node and configured to output a signal based on a charge from the photoelectric conversion element, a reset transistor, and a first transistor connected to the input node and configured to change a capacitance of the input node. A first control signal supplied to a gate electrode of the first transistor has at least three types of voltages.

Abstract: An AD conversion circuit includes a comparator configured to compare an analog signal with a ramp signal and output a comparison result signal indicating a result of the comparison, and performs an AD conversion using the comparison result signal. In the comparison, a potential of the ramp signal changes with a lapse of time from a first potential to a second potential. Before the comparison, the potential of the ramp signal changes at a first change rate and then changes at a second change rate smaller than the first change rate, the potential of the ramp signal changes from the first potential to a third potential between the first potential and the second potential, and the comparator is reset in a state where the third potential is input to the comparator.

Abstract: A photoelectric conversion apparatus according to one aspect of the present invention includes a first substrate including a photoelectric conversion region and a surrounding region, and a second substrate including a circuit for processing a signal from the photoelectric conversion region, and overlapping the first substrate. In this case, the circuit for processing a signal from the photoelectric conversion region includes a first circuit and a second circuit with a higher drive frequency than that of the first circuit. In an orthogonal projection, the second circuit is only provided in the photoelectric conversion region.

Abstract: A photoelectric conversion apparatus according to one aspect of the present invention includes a first substrate including a photoelectric conversion region and a surrounding region, and a second substrate including a circuit for processing a signal from the photoelectric conversion region, and overlapping the first substrate. In this case, the circuit for processing a signal from the photoelectric conversion region includes a first circuit and a second circuit with a higher drive frequency than that of the first circuit. In an orthogonal projection, the second circuit is only provided in the photoelectric conversion region.

Abstract: According to the present disclosure, column circuits operate selectively in a first drive mode to output a comparison signal or a second drive mode to acquire a correction value of a first reference signal and a second reference signal, and a selector circuit of a second column circuit selects the same reference signal out of the first reference signal and the second reference signal in the first drive mode and the second drive mode.

Abstract: The present invention achieves a coupling mechanism which allows for more efficient dissipation of heat generated by the heat generating element, as compared with a conventional coupling mechanism. A coupling mechanism (1) includes: a plate-like member group (11) including (i) a first plate-like member (11_2) which is joined to a heat generating element (92) and (ii) a second plate-like member (11_1) which is joined to a radiator (91); and a shaft member (12) configured to hold the first plate-like member and the second plate-like member (11_1, 11_2) so as to allow the first plate-like member and the second plate-like member (11_1, 11_2) to rotate on a shared axis which is orthogonal to main surfaces of the respective first and second plate-like members (11_1, 11_2). The main surface of the first plate-like member (11_2) is in plane contact with the main surface of the second plate-like member (11_1).

Abstract: An imaging device includes a pixel array unit including a plurality of pixels each including a plurality of photoelectric converters, and a signal processing unit including an analog-digital conversion unit, wherein a part of the pixels outputs a first analog signal based on electric charge generated at N photoelectric converters, and a second analog signal based on electric charge generated at M (M is an integer larger than N) photoelectric converters including the N photoelectric converters, other part of the pixels outputs the second analog signal, the number of the second analog signals output to the signal processing unit is larger than the number of the first analog signals output to the signal processing unit, and the signal processing unit receives the first and the second analog signals from each of the part of the pixels before the analog-digital conversion unit ends analog-digital conversion of the first analog signal.

Abstract: An object of an aspect of the present invention is to configure a radio relay device, which is applied to radio communication carried out with use of a microwave or a millimeter wave, such that a time delay which may occur in association with radio communication relay is reduced while a transmission loss of a radio wave is prevented or reduced. A radio IC (31) and a radio IC (32) are connected with each other via a wire (41) on a substrate (11) so that a baseband signal is transmitted via the wire (41).

Abstract: A semiconductor device has a first transistor of a first conductivity type and a second transistor of a second conductivity type, the first transistor is arranged in an active region of a semiconductor substrate, and a gate electrode and the active region overlap with each other in a plan view and also have a portion located between the source and the drain of the first transistor of the semiconductor substrate. In the channel width direction, an impurity concentration of the second conductivity type is higher at the end than on the center side of the portion.

Abstract: A unit circuit includes a photoelectric conversion element, an output transistor including an input node and configured to output a signal based on a charge from the photoelectric conversion element, a reset transistor, and a first transistor connected to the input node and configured to change a capacitance of the input node. A first control signal supplied to a gate electrode of the first transistor has at least three types of voltages.

Abstract: To provide a circuit board of a small size capable of propagating a radio wave between a front surface and a back surface of the circuit board. A circuit board includes: a through hole that penetrates between a front surface and a back surface of the circuit board; and a waveguide formed in the through hole, the waveguide including a dielectric having a rectangular parallelepiped shape and a conductor covering surfaces other than a first surface and a second surface of the dielectric, the first surface being on a front surface side of the circuit board, the second surface being on a back surface side of the circuit board.

Abstract: An imaging device includes a pixel region in which a plurality of pixels, each including a photoelectric converter, are arranged, including an effective pixel region, an optical black region covered with a light-shielding film, and a dummy pixel region arranged between the effective pixel region and the optical black region. The pixels arranged in at least the effective pixel region and the optical black region among the plurality of the pixels each include an optical waveguide arranged above the photoelectric converter. The pixels including the optical waveguides are arranged between the effective pixel region and the optical black region so as to be spaced apart from each other by at least a one-pixel pitch.

Abstract: An imaging device includes a pixel array unit including a plurality of pixels each including a plurality of photoelectric converters, and a signal processing unit including an analog-digital conversion unit, wherein a part of the pixels outputs a first analog signal based on electric charge generated at N photoelectric converters, and a second analog signal based on electric charge generated at M (M is an integer larger than N) photoelectric converters including the N photoelectric converters, other part of the pixels outputs the second analog signal, the number of the second analog signals output to the signal processing unit is larger than the number of the first analog signals output to the signal processing unit, and the signal processing unit receives the first and the second analog signals from each of the part of the pixels before the analog-digital conversion unit ends analog-digital conversion of the first analog signal.

Abstract: Realized is a bonding method which makes it possible to cause an angle formed between a front surface of an optical element and an upper end surface of a housing side wall to accurately match a design objective value. The bonding method includes the steps of (a) placing an optical element (12) on a jig (2) so that a front surface (12a) of the optical element (12) is in surface contact with a first flat surface (23a) of the jig (2); and (b) placing a housing (11) on the jig (2) so that (i) an upper end surface (11a1) of a side wall (11a) of the housing (11) is in surface contact with a second flat surface (21a) of the jig (2) and (ii) a bottom plate (11b) of the housing (11) is in contact with a back surface (12b) of the optical element (12) via an adhesive (15).

Abstract: An optical device detects the presence or absence of a foreign matter and a position of the foreign matter. The optical device includes first and second antireflection films each provided in an optical window of a lid part covering an opening of a housing part, the first and second antireflection films each (i) transmitting therethrough signal light used by an optical element, (ii) having a higher reflectance with respect to inspecting light than a reflectance with respect to the signal light, the inspecting light being different in wavelength from the signal light, and (iii) having a lower reflectance with respect to second inspecting light than a reflectance with respect to first inspecting light.

Abstract: First processing of causing a hold unit to hold a first signal from an amplification unit based on reset of the amplification unit, second processing of performing AD conversion of the held first signal and outputting a second signal obtained by superposing a signal based on charges generated in a photoelectric conversion unit of a first-row pixel on the first signal, third processing of performing an operation of performing AD conversion of the held second signal and an operation of resetting the amplification unit at least partly in parallel, and fourth processing of causing the hold unit to hold a fourth signal obtained by superposing a signal based on charges generated in the photoelectric conversion unit of a second-row pixel on a third signal from the amplification unit based on resetting of the amplification unit and is output from the amplification unit are performed.

Abstract: A photoelectric conversion apparatus according to one aspect of the present invention includes a first substrate including a photoelectric conversion region and a surrounding region, and a second substrate including a circuit for processing a signal from the photoelectric conversion region, and overlapping the first substrate. In this case, the circuit for processing a signal from the photoelectric conversion region includes a first circuit and a second circuit with a higher drive frequency than that of the first circuit. In an orthogonal projection, the second circuit is only provided in the photoelectric conversion region.

Abstract: A photoelectric conversion apparatus according to one aspect of the present invention includes a first substrate including a photoelectric conversion region and a surrounding region, and a second substrate including a circuit for processing a signal from the photoelectric conversion region, and overlapping the first substrate. In this case, the circuit for processing a signal from the photoelectric conversion region includes a first circuit and a second circuit with a higher drive frequency than that of the first circuit. In an orthogonal projection, the second circuit is only provided in the photoelectric conversion region.

Abstract: In an image pickup system according to an aspect of the present invention, a pixel portion includes a plurality of first pixel rows controlled by a scanning circuit such that charge accumulation periods are at least partially overlapped with each other and a plurality of second pixel rows controlled by the scanning circuit such that charge accumulation periods are not overlapped with the charge accumulation periods of the first pixel rows, part of the plurality of first pixel rows commonly uses a floating diffusion with a pixel in the second pixel row, another part of the plurality of first pixel rows does not commonly use the floating diffusion with the pixel in the second pixel row, and the signal processing unit performs signal processing without using a signal of the pixel in the first pixel row that commonly uses the floating diffusion with the pixel in the second row.