Abstract: A filter device includes a piezoelectric substrate, first and second functional elements provided on a surface of the piezoelectric substrate, a first conductive layer provided on the surface of the piezoelectric substrate, the first conductive layer connecting the first and second functional elements to each other, an insulating layer provided at least on the first conductive layer, a cover that faces the surface of the piezoelectric substrate, a support layer located between the surface of the piezoelectric substrate and the cover, the support layer defining hollow portions, in which the first and second functional elements are provided, between the piezoelectric substrate and the cover, and a first conductor that connects the insulating layer to the cover.

Abstract: An electronic component includes a piezoelectric substrate, a first functional element, a first wiring, insulating films, a first conductive film, and a first external connection terminal. The first functional element is disposed on the piezoelectric substrate. The first wiring is disposed on the piezoelectric substrate, and is electrically connected to the first functional element. The insulating films are disposed on the piezoelectric substrate, and define a first hollow portion in which the first functional element is included. The first conductive film is disposed on the insulating films, and has a portion that passes through the insulating films and is electrically connected to the first wiring. The first external connection terminal is provided on the first conductive film, and is disposed at a position overlapping at least a portion of the first functional element in a plan view as viewed in the thickness direction of the piezoelectric substrate.

Abstract: An acoustic wave device includes a cover portion, an outer support layer, a support portion, a piezoelectric substrate, and functional elements on the piezoelectric substrate. The outer support layer is on the piezoelectric substrate around a region where the functional elements are disposed. The cover portion is opposed to the piezoelectric substrate with the outer support layer interposed therebetween. The support portion is in a hollow space defined by the piezoelectric substrate, the outer support layer, and the cover portion. The height of the support portion is smaller than that of the outer support layer and larger than that of each of the functional elements. A gap is provided between the support portion and the cover portion or between the support portion and the piezoelectric substrate.

Abstract: A surface acoustic wave device includes a piezoelectric substrate and functional elements on a first surface of the piezoelectric substrate. At least a portion of the functional elements includes an interdigital transducer (IDT) electrode, and a surface acoustic wave resonator is defined by the piezoelectric substrate and the IDT electrode. A portion of a wiring pattern connecting a first functional element and a second functional element is on a second surface different from the first surface of the piezoelectric substrate.

Abstract: A surface acoustic wave device includes a piezoelectric substrate, functional elements on the piezoelectric substrate, a cover portion that opposes the piezoelectric substrate with a support layer interposed therebetween, and an input/output terminal on the cover portion. At least a portion of the functional elements includes an interdigital transducer electrode, and a surface acoustic wave resonator is defined by the piezoelectric substrate and the IDT electrode. The functional elements include a filter that passes a signal in a predetermined frequency band, and a cancel circuit which is connected in parallel to the filter and attenuates a signal outside the predetermined frequency band in signals output from the output terminal. A portion of a wiring pattern connecting a first functional element and a second functional element included in the plurality of functional elements is provided on the cover portion.

Abstract: An electronic device includes an insulation material layer provided on a first main surface of a piezoelectric substrate and surrounding a functional element, and a protective layer provided on the insulation material layer. The piezoelectric substrate and the insulation material layer define a hollow portion accommodating the functional element. The protective layer includes a first portion above the hollow portion, a second portion adjacent to the first portion at one end of the second portion, and a third portion adjacent to the second portion at another end of the second portion. A distance between the first main surface and a surface of the protective layer in the thickness direction is greatest at a location where the second portion is adjacent to or in a vicinity of the first portion, and the distance is shortest at a location where the second portion is adjacent to or in a vicinity of the third portion.

Abstract: In a filter device, a transversal elastic wave filter, which defines a delay element, is connected in parallel with a band pass filter. The transversal elastic wave filter has the same amplitude characteristic as and the opposite phase to the band pass filter at a desired frequency inside an attenuation range of the band pass filter. When a wavelength determined by an electrode finger period of IDTs and is denoted by ?, the distance between the first IDT and the second IDT of the elastic wave filter is about 12? or less.

Abstract: An electronic device includes a support layer is provided on a piezoelectric substrate and surrounds a functional element. A cover layer is located above the support layer, and faces the piezoelectric substrate. A protective layer seals the support layer and the cover layer. The support layer is provided on at least the outer periphery of the piezoelectric substrate, and defines a hollow portion within the outer periphery of the piezoelectric substrate. The protective layer includes a first portion above the hollow portion, a second portion above the support layer, and a curved surface that is convex in an opposite direction from the piezoelectric substrate.

Abstract: A circuit module includes a mounting substrate including a conductor wiring, an elastic wave element provided in or on a main surface of the mounting substrate, an electric element provided in or on the main surface, the electric element being different from the elastic wave element, and an insulating resin portion provided in or on the main surface to cover the elastic wave element and the electric element. The elastic wave element and the electric element are connected to each other by the conductor wiring. A height of the elastic wave element is about 0.28 mm or less, which is less than that of the electric element. The thickness of the resin portion in a region in which the resin portion covers the elastic wave element is greater than the thickness of the resin portion in a region in which the resin portion covers the electric element.

Abstract: An acoustic wave device includes a functional electrode provided on a first main surface of a substrate, and a support provided on the substrate and surrounding a portion where the functional electrode is provided. A cover closes an opening of the support. The cover includes a resin layer and a metal layer that is integrated with the resin layer. The metal layer includes a first metal layer and a second metal layer, the first metal layer having a larger planar area than the second metal layer. The Young's modulus of the metal defining the second metal layer is higher than the Young's modulus of the metal defining the first metal layer. In a plan view, the first metal layer covers a hollow portion from above and the second metal layer discontinuously covers the hollow portion from above.

Abstract: An elastic wave device includes an impedance matching element, a switch that switches a connection state between a first switch terminal connected to the impedance matching element and second switch terminals, multiplexers connected to the second switch terminals, a substrate, and at least one inductor on the substrate and has an inductance smaller than an inductance of the impedance matching element. At least one of the second switch terminals and at least one of the multiplexers are connected with the first inductor interposed therebetween.

Abstract: In a filter device, a transversal elastic wave filter, which defines a delay element, is connected in parallel with a band pass filter. The transversal elastic wave filter has the same amplitude characteristic as and the opposite phase to the band pass filter at a desired frequency inside an attenuation range of the band pass filter. When a wavelength determined by an electrode finger period of IDTs and is denoted by ?, the distance between the first IDT and the second IDT of the elastic wave filter is about 12? or less.

Abstract: A circuit module includes a mounting substrate including a conductor wiring, an elastic wave element provided in or on a main surface of the mounting substrate, an electric element provided in or on the main surface, the electric element being different from the elastic wave element, and an insulating resin portion provided in or on the main surface to cover the elastic wave element and the electric element. The elastic wave element and the electric element are connected to each other by the conductor wiring. A height of the elastic wave element is about 0.28 mm or less, which is less than that of the electric element. The thickness of the resin portion in a region in which the resin portion covers the elastic wave element is greater than the thickness of the resin portion in a region in which the resin portion covers the electric element.

Abstract: A high-frequency apparatus includes a first device and a second device, and a mounting substrate on which the first and second devices are mounted. At least the second device is an acoustic wave device including a piezoelectric substrate and a functional element. The first device and the second device are adjacent to or in a vicinity of each other on the mounting substrate. A coefficient of linear expansion of a substrate of the first device is lower than a coefficient of linear expansion of the mounting substrate, and a coefficient of linear expansion of the piezoelectric substrate of the second device is higher than the coefficient of linear expansion of the mounting substrate.

Abstract: In a filter device, a transversal elastic wave filter, which defines a delay element, is connected in parallel with a band pass filter. The transversal elastic wave filter has the same amplitude characteristic as and the opposite phase to the band pass filter at a desired frequency inside an attenuation range of the band pass filter. When a wavelength determined by an electrode finger period of IDTs and is denoted by ?, the distance between the first IDT and the second IDT of the elastic wave filter is about 12? or less.

Abstract: An elastic wave filter apparatus includes at least one excitation electrode, a first electrode land, and second electrode lands provided on a first main surface of a device substrate including a piezoelectric layer. A signal terminal and metal members are provided on a second main surface of the device substrate. The first electrode land and the signal terminal are connected to a signal potential, and the second electrode lands and the metal members are connected to a ground potential. A first connection electrode connects the first electrode land and the signal terminal, and a second connection electrode connects at least one of the second electrode lands and at least one of the metal members. The at least one metal member connected to the second connection electrode overlaps at least a portion of the at least one excitation electrode across the device substrate.

Abstract: An acoustic wave device includes a cover portion, an outer support layer, a support portion, a piezoelectric substrate, and functional elements on the piezoelectric substrate. The outer support layer is on the piezoelectric substrate around a region where the functional elements are disposed. The cover portion is opposed to the piezoelectric substrate with the outer support layer interposed therebetween. The support portion is in a hollow space defined by the piezoelectric substrate, the outer support layer, and the cover portion. The height of the support portion is smaller than that of the outer support layer and larger than that of each of the functional elements.

Abstract: An acoustic wave device includes a piezoelectric substrate, functional elements, an outer peripheral support layer, a cover portion, and a protective layer covering the cover portion. A hollow space is defined by the piezoelectric substrate, the outer peripheral support layer, and the cover portion, and the functional elements are disposed in the hollow space. The acoustic wave device further includes an under bump metal layer, a wiring pattern, and a through-electrode that connects these elements. In the protective layer, a through-hole to be filled with a conductor to electrically connect a solder ball and the under bump metal layer is provided. The outer peripheral support layer includes a protruding portion protruding to the hollow space. When the acoustic wave device is seen in plan view, at least a portion of the through-hole overlaps the hollow space, and an end portion of the protruding portion overlaps an inner region of the through-hole.

Abstract: In a filter device, a transversal elastic wave filter, which defines a delay element, is connected in parallel with a band pass filter. The transversal elastic wave filter has the same amplitude characteristic as and the opposite phase to the band pass filter at a desired frequency inside an attenuation range of the band pass filter. When a wavelength determined by an electrode finger period of IDTs and is denoted by ?, the distance between the first IDT and the second IDT of the elastic wave filter is about 12? or less.

Abstract: An elastic wave device includes a piezoelectric substrate, an IDT electrode on the piezoelectric substrate and including first and second busbars and first and second electrode fingers connected to the first and second busbars, a bump electrode electrically connected to the IDT electrode, a protective film covering the IDT electrode, and a heat-conductive material layer that has an insulating property and that is provided only in a region excluding an excitation region of any IDT electrode and a region located above the bump electrode.