Abstract: A portable information system having an information registration function achieves reduction in manufacturing cost and power consumption. By connecting portable information equipment (1) and a battery charger (10) to be chargeable, signal transmission becomes possible between a micro controller (2) in the portable information equipment (1) and a micro controller (11) in the battery charger (10). Under the control of the micro controllers (2, 11), information management operation is automatically performed during charging. The operation includes backup processing in which personal information stored in a storage portion (3) in the portable information equipment (1) is transferred to a storage portion (12) in the battery charger (10) as backup information, and restore processing in which the backup information stored in the storage portion (12) is transferred to the storage portion (3) as the personal information.

Abstract: A portable information system having an information registration function achieves reduction in manufacturing cost and power consumption. By connecting portable information equipment (1) and a battery charger (10) to be chargeable, signal transmission becomes possible between a micro controller (2) in the portable information equipment (1) and a micro controller (11) in the battery charger (10). Under the control of the micro controllers (2, 11), information management operation is automatically performed during charging. The operation includes backup processing in which personal information stored in a storage portion (3) in the portable information equipment (1) is transferred to a storage portion (12) in the battery charger (10) as backup information, and restore processing in which the backup information stored in the storage portion (12) is transferred to the storage portion (3) as the personal information.

Abstract: A field shield portion consisting of a kind of transistor is formed to electrically insulate an NMOS region of a memory cell from other regions. The field shield portion includes a field shield gate electrode layer, a p type region and a gate insulating film. Threshold value of this transistor is set higher than the power supply voltage, and field gate electrode layer thereof is in a floating state. It is unnecessary to provide a contact portion for applying a prescribed voltage at field shield gate electrode layer. Therefore, the region for forming the contact portion in field shield gate electrode layer can be reduced. As a result, a semiconductor device of which layout area is reduced, is provided.

Abstract: A Silicon-On-Insulator (SOI) CMOS circuit comprises a plurality of PMOS transistors connected in series to each other, each of the plurality of PMOS transistors having its body and gate connected to each other, and at least an NMOS transistor connected to one of the plurality of PMOS transistors, the NMOS transistor having its body connected to a low reference potential having a value of ground. The SOI CMOS circuit can further comprise a plurality of potential limiting circuits each connected between the body and gate of each of the plurality of PMOS transistors, for setting a lower limit of the potential of the body of each of the plurality of PMOS transistors to a voltage between a high reference potential and a potential obtained by subtracting a built-in potential from the high reference potential.

Abstract: In each of basic cells (BC) arranged in array in an SOI layer, PMOS and NMOS transistors are symmetrically formed. Body regions (11) and (12) are formed to divide source/drain layers (1) and (2), respectively, and gate electrodes (3) and (4) are formed on the body regions (11) and (12) respectively to sandwich gate insulating films therebetween. The gate electrodes (3) and (4) are connected at their both ends to gate contact regions (5) to (8), respectively, and the body regions (11) and (12) are connected at their one ends to body contact regions (9) and (10), respectively. The body contact regions (9) and (10) are so arranged as to sandwich the gate contact regions (5) and (7) together with the gate electrodes (3) and (4), respectively. Being of a SOI type, the device achieves high-speed operation and low power consumption.

Abstract: A semiconductor integrated circuit including a first MOS transistor supplied with a first power supply voltage and having a high threshold voltage; a second MOS transistor supplied with a second power supply voltage and having the high threshold voltage; a logic circuit connected between the first transistor and the second transistor and including a plurality of MOS transistors having a low threshold voltage; a control circuit for generating a control signal when the logic circuit is in a standby state; and a voltage generating circuit for generating a first voltage which is a higher than the first power supply voltage and a second voltage which is a lower than the second power supply voltage, for supplying the first voltage to a gate of the first MOS transistor and for supplying the second voltage to a gate of the second MOS transistor when the logic circuit is in the standby state, thereby to decrease leakage current through the first and second transistors and through the logic circuit when in the standby

Abstract: A semiconductor integrated circuit and a method for reducing the consumed power are provided. A comparator outputs bits having the same level, which correspond to each other, of a last input stored in a register and a current input that acts as an input signal. A zero counter counts the number of the bits having the same level output from the comparator. If the number of the bits having the same level is smaller than a predetermined number, the current input is not similar to the last input. Consequently, an instruction is given to a flip-flop to invert the current input. The inverted current input becomes similar to the last input. Thus, the consumed power of a logic can be reduced.

Abstract: A flip-flop circuit is constituted of two latch circuits of the same structure that are cascaded. The latch circuits each includes an inverter formed of a P channel transistor and an N channel transistor, an N channel transistor connected between a common node and a ground node, and two data input/output terminals. Two kinds of clock signals supplied to gates of N channel transistors are complementary to each other.

Abstract: In order to improve a withstand voltage and implement a gate array SOI semiconductor integrated circuit device having a large gate width, a region consisting of end cells (49) is provided on each end of a region formed by repeatedly arranging basic cells (BC) consisting of both transistor regions (32, 33) in a first direction and while symmetrically arranging the same to be folded in a second direction. Both ends of a channel region of a PMOS transistor (42) are drawn out in the second direction to provide a P-type semiconductor layer just under a field shielding gate electrode (FG), and this semiconductor layer is drawn also in the first direction to be connected with a P-type semiconductor layer of the end cell (49). A first source potential is applied to a region (PBD) which is bonded with one of the P-type semiconductor layers.

Abstract: A semiconductor memory device operable for reading and writing in a normal mode and in a test mode is divided into memory cell sections each having blocks of memory cells. Data bus lines are connected to the respective blocks, and switches interconnect data bus lines connected to blocks of the different sections. The switch are made conductive during reading and writing in the normal mode and during writing in the test mode, and nonconductive during reading in the test mode. Input data are applied onto the data bus lines connected one of the blocks for writing in the blocks of the sections simultaneously during writing in the normal mode and in the test mode. In the normal mode, data are read out of the blocks of the sections through the data bus lines connected to the above-mentioned one of the blocks. In the test mode, the data are read out of the blocks of the sections through the data bus lines connected to the respective blocks.

Abstract: A highly reliable data holding circuit with a reduced circuit area and reduced power consumption is disclosed. Output terminals (DO, DOB) are connected to input terminals (DI, DIB) receiving signals at H and L levels (potentials VDD and GND) in mutually exclusive relation through transistors (MN2, MN1) and inverters (INV1, INV2). Input terminals of the inverters (INV1, INV2) are connected to power supplies (VDD) through transistors (MP2, MP1) having gate electrodes connected to output terminals of the inverters (INV2, INV1), respectively. The transistors (MN2, MN1) cause a voltage drop of the signals to be applied to the inverters (INV1, INV2) by the amount of a threshold voltage (Vthn). One of the transistors (MP1, MP2) which receives a signal at L level at its control terminal provides a potential (VDD) to the input terminal of one of the inverters (INV1, INV2) which is to output a signal at L level, compensating for the voltage drop by the amount of the threshold voltage (Vthn).

Abstract: A logic circuit (L.sub.i) is connected between a virtual power supply line (VDDV) connected to an actual power supply (VDD) through a PMOS transistor (Q1) and a virtual grounding line (GNDV) connected to an actual ground (GND) through an NMOS transistor (Q2). During an active period, the transistors (Q1, Q2) are constantly conducting, and the virtual power supply line (VDDV) and virtual grounding line (GNDV) are at the power supply potential (VDD) and ground potential (GND), respectively. During a standby period, the transistors (Q1, Q2) periodically repeat conduction/non-conduction to charge and discharge the virtual power supply line (VDDV) and virtual grounding line (GNDV), suppressing power consumption while preventing loss of information held by the logic circuit (L.sub.i).

Abstract: A semiconductor integrated circuit device having a SOI structure which can prevent a deterioration in the breakdown voltage of a transistor without damaging integration, and a method for manufacturing the semiconductor integrated circuit device are obtained. An embedded oxide film is not formed over the whole face of a P type silicon layer but has an opening in a region which is placed below a gate electrode. The opening is filled in to form a penetration P layer. Accordingly, a SOI layer is electrically connected to the P type silicon layer through the penetration P layer. The plane position and shape of the gate electrode conform to those of the penetration P layer.

Abstract: A semiconductor memory device operable for reading and writing in a normal mode and in a test mode is divided into memory cell sections each having blocks of memory cells. Data bus lines are connected to the respective blocks, and switches interconnect data bus lines connected to blocks of the different sections. The switch are made conductive during reading and writing in the normal mode and during writing in the test mode, and nonconductive during reading in the test mode. Input data are applied onto the data bus lines connected one of the blocks for writing in the blocks of the sections simultaneously during writing in the normal mode and in the test mode. In the normal mode, data are read out of the blocks of the sections through the data bus lines connected to the above-mentioned one of the blocks. In the test mode, the data are read out of the blocks of the sections through the data bus lines connected to the respective blocks.

Abstract: In order to improve a withstand voltage and implement a gate array SOI semiconductor integrated circuit device having a large gate width, a region consisting of end cells (49) is provided on each end of a region formed by repeatedly arranging basic cells (BC) consisting of both transistor regions (32, 33) in a first direction and while symmetrically arranging the same to be folded in a second direction. Both ends of a channel region of a PMOS transistor (42) are drawn out in the second direction to provide a P-type semiconductor layer just under a field shielding gate electrode (FG), and this semiconductor layer is drawn also in the first direction to be connected with a P-type semiconductor layer of the end cell (49). A first source potential is applied to a region (PBD) which is bonded with one of the P-type semiconductor layers.

Abstract: A field programmable gate array includes a logic blocks, switching elements for establishing a signal propagation path, and memory cells provided corresponding to the switching elements for storing data determining on and off states of corresponding switching elements. In this gate array, a supply voltage fed to a power input terminal is transmitted to power supply nodes of logic circuit blocks. A booster circuit boosts the supply voltage fed to the power input terminal and feeds the boosted voltage to power supply nodes of memory cells for programming a signal propagation path. A high-level signal potential of each memory cell is fed to the gate of an n-channel MOS transistor which functions as the switching element. The switching elements are disposed on signal lines and serve to interconnect the signal lines selectively to establish a signal propagation path.

Abstract: A semiconductor neural network includes a coupling matrix having coupling elements arranged in a matrix which couple with specific coupling strengths internal data input lines to internal data output lines. The internal data output lines are divided into groups. The neural network further comprises weighting addition circuits provided corresponding to the groups of the internal data output lines. A weighting addition circuit includes weighing elements for adding weights to signals on the internal data output lines in the corresponding group and outputting the weighted signals, and an addition circuit for outputting a total sum of the outputs of those weighting elements.

Abstract: A semiconductor neural network includes a coupling matrix having coupling elements arranged in a matrix which couple with specific coupling strengths internal data input lines to internal data output lines. The internal data output lines are divided into groups. The neural network further comprises weighting addition circuits provided corresponding to the groups of the internal data cutput lines. A weighting addition circuit includes weighing elements for adding weights to signals on the internal data output lines in the corresponding group and outputting the weighted signals, and an addition circuit for outputting a total sum of the outputs of those weighting elements.

Abstract: A neural network device includes internal data input lines, internal data output lines, coupling elements provided at the connections of the internal data input lines and the internal data output lines. The coupling elements couple, with specific programmable coupling strengths, the associated internal data input lines to the associated internal data output lines. In a program mode, the internal data output lines serve as signal lines for transmitting the coupling strength information. Each of the coupling elements includes storage elements, circuitry for writing a signal potential on an associated internal data output line, and circuitry for supplying a stored signal for a storage element into an associated internal data output line.

Abstract: A semiconductor memory device operable for reading and writing in a normal mode and in a test mode is divided into memory cell sections each having blocks of memory cells. Data bus lines are connected to the respective blocks, and switches interconnect data bus lines connected to blocks of the different sections. The switch are made conductive during reading and writing in the normal mode and during writing in the test mode, and nonconductive during reading in the test mode. Input data are applied onto the data bus lines connected to one of the blocks for writing in the blocks of the sections simultaneously during writing in the normal mode and in the test mode. In the normal mode, data are read out of the blocks of the sections through the data bus lines connected to the above-mentioned one of the blocks. In the test mode, the data are read out of the blocks of the sections through the data bus lines connected to the respective blocks.