Abstract: In switching elements each using a two-terminal-type variable resistance element, improper writing or any improper operation is often caused and the reliability of the switching elements cannot be improved easily. A switching element according to the present invention is equipped with a first variable resistance element equipped with a first input/output terminal and a first connection terminal, a second variable resistance element equipped with a second input/output terminal and a second connection terminal, and a rectifying element equipped with a control terminal and a third connection terminal, wherein the first connection terminal, the second connection terminal and the third connection terminal are connected to one another.

Abstract: The present invention addresses the problem of inhibiting the evolution of a poisoning gas to eliminate wiring-pattern resolution failures and thereby forming a desired wiring layer structure to provide functional elements having an improved property yield. This method for forming multi-layered copper interconnect on a semiconductor substrate comprises: forming a multilayer resist structure to form a given resist pattern on a substrate including an interlayer dielectric film that has via holes which have been formed in part thereof and filled with an SOC layer, the multilayer resist structure comprising an SOC layer, an SOG layer, an SiO2 layer, and a chemical amplification type resist superposed in this order from the substrate side; conducting etching using the resist pattern as a mask to form a pattern for a wiring layer and via plugs; and forming the wiring layer and the via plugs in the pattern.

Abstract: The present invention provides a highly reliable resistance changing element while maintaining a low parasitic capacitance of the wiring when the resistance changing element is provided in the wiring layer on a semiconductor substrate. In the present invention, there is selected, as a structure for providing the resistance changing element in the wiring layer on a semiconductor substrate, a structure having: a first interlayer insulation film and a second interlayer insulation film positioned above the first interlayer insulation film; and a resistance changing element formed on the first interlayer insulation film and provided with at least an electrode and a resistance changing film; a protective insulation film being formed on the side surface of the resistance changing element, and the first and second interlayer insulation films being in direct contact with each other.

Abstract: A resistance changing element according to the present invention comprises a first electrode (101) and a second electrode (103); and an ion conducting layer (102) that is formed between the first electrode (101) and the second electrode (103) and that contains at least oxygen and carbon.

Abstract: A resistance changing element according to the present invention comprises a first electrode (101) and a second electrode (103); and an ion conducting layer (102) that is formed between the first electrode (101) and the second electrode (103) and that contains at least oxygen and carbon.

Abstract: Disclosed are porous resin particles which contain a polymer of a monomer mixture containing, as monomers, at least a monofunctional (meth)acrylic acid ester and a crosslinking monomer. The monofunctional (meth)acrylic acid ester accounts for 1 wt % to 50 wt % of the monomer mixture, and the crosslinking monomer accounts for 50 wt % to 99 wt % of the monomer mixture. The porous resin particles have a specific surface area of 190 m2/g to 300 m2/g and a bulk specific gravity of 0.25 g/mL to 0.45 g/mL.

Abstract: A variable resistance element includes a first electrode, a second electrode and an ion conduction layer interposed between the first and second electrodes. The ion conduction layer contains an organic oxide containing at least oxygen and carbon. The carbon concentration distribution in the ion conduction layer is such that the carbon concentration in an area closer to the first electrode is greater than that in an area closer to the second electrode.

Abstract: A process for producing resin particles includes a step in which a polymerizable mixture including a polymerizable monomer including at least one of a styrene-based monomer and a (meth)acrylic-based monomer, and a polymerization initiator is absorbed into seed particles in an aqueous medium, without using a dispersant, in the presence of an anionic surfactant not having a polyoxyethylene chain but having an alkyl group; and a step in which the polymerizable monomer is polymerized in an aqueous medium, without using a dispersant, in the presence of an anionic surfactant having a polyoxyethylene chain to thereby obtain resin particles. The resin particles include a resin derived from a polymerizable monomer including at least one of a styrene-based monomer and a (meth)acrylic-based monomer. The proportion by number of particles having a particle diameter in the range of from 80 to 120% of the volume-average particle diameter is 85% or more.

Abstract: A variable resistance element includes a first electrode, a second electrode and an ion conduction layer interposed between the first and second electrodes. The ion conduction layer contains an organic oxide containing at least oxygen and carbon. The carbon concentration distribution in the ion conduction layer is such that the carbon concentration in an area closer to the first electrode is greater than that in an area closer to the second electrode.

Abstract: A resistance changing element according to the present invention comprises a first electrode (101) and a second electrode (103); and an ion conducting layer (102) that is formed between the first electrode (101) and the second electrode (103) and that contains at least oxygen and carbon.