Abstract: After a developing step is performed by feeding developer to the substrate, a second nozzle starts dispensation of a surfactant rinse liquid to a position away from the center of a rotating substrate. This operation is performed such that the center of the substrate does not enter into a reaching region of the substrate where the surfactant rinse liquid dispensed from the second nozzle firstly reaches. Accordingly, a point of the reaching region of the surfactant rinse liquid is dispersed, leading to suppression in locally smaller or larger line width of a resist pattern at the center and around the center of the substrate. Consequently, this achieves enhanced uniformity of the line widths of the resist pattern within a surface of the substrate during the rinse process.

Abstract: During a first period, pure water used as a low-volatile liquid is supplied onto a substrate while the substrate is rotated. After discharge of the low-volatile liquid is stopped, the low-volatile liquid remains in a large region on a DSA film. The low-volatile liquid is held on the DSA film without reacting with the DSA film. During a subsequent second period, an organic solvent is supplied to the substrate while the substrate is rotated. The organic solvent supplied to the substrate is mixed with the low-volatile liquid remaining on the DSA film. In this case, volatilization of the organic solvent is inhibited on the DSA film.

Abstract: A substrate processing apparatus includes a development processor and a reversal film former, and processes a substrate having one surface on which a resist film made of a photosensitive material is formed. The development processor forms a resist pattern on the one surface of the substrate by performing development processing on a resist film using a development liquid. A reversal film former forms a reversal film having etch resistance higher than that of the resist film on the one surface of the substrate to cover the resist pattern while regulating a temperature of the substrate in a certain range after the development processing is performed by the development processor.

Abstract: A substrate processing apparatus includes a spin chuck that holds a substrate, a processing liquid supply unit that supplies a first processing liquid having first specific gravity and a second processing liquid having second specific gravity smaller than the first specific gravity to a surface to be processed of the substrate held by the spin chuck, a collection tank that stores the used first and second processing liquids that have been supplied to the substrate, and a processing liquid separating mechanism that separates the first processing liquid and the second processing liquid based on specific gravity, the first and second processing liquids being stored in the collection tank.

Abstract: In a developing method, a developing nozzle starts discharge of developer to a position set in advance on a substrate, spinning about the center thereof, away from the center. This causes a flow of the developer at the center having a small centrifugal force immediately after the discharge is started. Accordingly, a dissolution product of a resist can be ejected outside the substrate more efficiently than the case when the discharge of the developer to the center is started. Moreover, this achieves distributed arrival positions of the developer directly discharged from the developing nozzle immediately after the discharge is started. Consequently, thin resist patterns especially at the center of the substrate are eliminated to obtain suppression in treatment variation.

Abstract: Exhaust of gas in the processing chamber is started by a gas exhaust section, and supply of an inert gas into the processing chamber is started by a gas supply section after a predetermined time length has elapsed since the exhaust of gas is started. Alternatively, the gas in the processing chamber in which a substrate is stored is exhausted by the gas exhaust section, the inert gas is supplied into the processing chamber by the gas supply section, and the pressure in a light emitter that has a light-transmitting plate is allowed to match or be close to the pressure in the processing chamber. The substrate in the processing chamber is irradiated with vacuum ultraviolet rays by the light emitter with an oxygen concentration in the gas in the processing chamber lowered to a predetermined concentration. Thus, the substrate is exposed.

Abstract: A resist film including a metallic component and a photosensitive material is formed on a surface of a substrate, and then a peripheral portion of the resist film on the substrate is irradiated with light by an edge exposer. Subsequently, development processing is performed with a development liquid from a nozzle on the exposed portion of the resist film. Thus, the part of the resist film formed on the peripheral portion of the substrate is removed. Thereafter, exposure processing is performed on the substrate in an exposure device, so that an exposure pattern is formed on the resist film. Then, a development liquid is supplied to the exposed substrate in a development processing unit, so that development processing is performed on the resist film.

Abstract: A substrate having a film of a coating liquid containing metal is held by a spin chuck, the film having been exposed in a predetermined pattern. A slit nozzle supplies a development liquid to a surface to be processed of the substrate supported by the spin chuck. A cleaning liquid for removing or dissolving metal is supplied by a cleaning nozzle to the surface to be processed of the substrate to which the development liquid has been supplied.

Abstract: In a developing method, a developing nozzle starts discharge of developer to a position set in advance on a substrate, spinning about the center thereof, away from the center. This causes a flow of the developer at the center having a small centrifugal force immediately after the discharge is started. Accordingly, a dissolution product of a resist can be ejected outside the substrate more efficiently than the case when the discharge of the developer to the center is started. Moreover, this achieves distributed arrival positions of the developer directly discharged from the developing nozzle immediately after the discharge is started. Consequently, thin resist patterns especially at the center of the substrate are eliminated to obtain suppression in treatment variation.

Abstract: A substrate processing apparatus includes a spin chuck that holds a substrate, a processing liquid supply unit that supplies a first processing liquid having first specific gravity and a second processing liquid having second specific gravity smaller than the first specific gravity to a surface to be processed of the substrate held by the spin chuck, a collection tank that stores the used first and second processing liquids that have been supplied to the substrate, and a processing liquid separating mechanism that separates the first processing liquid and the second processing liquid based on specific gravity, the first and second processing liquids being stored in the collection tank.

Abstract: A nozzle is stored in a nozzle storage hole of a waiting pod. In this state, a cleaning liquid is discharged to an outer peripheral surface of the nozzle from a plurality of discharge ports. Thus, a coating liquid and its solidified matter adhering to the nozzle are dissolved and removed from the nozzle. Subsequently, a metal removal liquid is discharged from a plurality of discharge ports to the outer peripheral surface of the nozzle. Thus, a metallic component remaining on the nozzle is dissolved and removed from the nozzle. Further, pure water is discharged to the outer peripheral surface of the nozzle from the plurality of discharge ports, and the metal removal liquid adhering to the nozzle is cleaned away.

Abstract: A substrate is held and rotated by a spin chuck, and a coating liquid is discharged to the substrate. The coating liquid that is splashed outwardly from the substrate is received by an outer cup. A cleaning liquid that has been discharged from a cup cleaning nozzle is discharged to an inner peripheral surface of the outer cup through a first guide to clean the outer cup. Thus, the coating liquid, its solidified matter and the like adhering to the outer cup are dissolved and removed from the outer cup. Subsequently, a metal removal liquid that has been discharged from the cup cleaning nozzle is discharged to an inner peripheral surface of the outer cup through a second guide. Thus, a metallic component remaining on the outer cup is dissolved and removed from the outer cup.

Abstract: An underlayer is formed to cover the upper surface of a substrate and a guide pattern is formed on the underlayer. A DSA film constituted by two types of polymers is formed in a region on the underlayer where the guide pattern is not formed. Thermal processing is performed while a solvent is supplied to the DSA film on the substrate. Thus, a microphase separation of the DSA film occurs. As a result, patterns made of the one polymer and patterns made of another polymer are formed. Exposure processing and development processing are performed in this order on the DSA film after the microphase separation such that the patterns made of another polymer are removed.

Abstract: Disclosed is a negative developing method including a puddle-forming step, a diluting step, and a surface drying step. In the puddle-forming step, developer containing an organic solvent is supplied to a resist film formed on a surface of the substrate and keeping a puddle of the developer on the resist film. In the diluting step, a concentration of a dissolution product dissolved in the developer on the resist film is diluted by additionally supplying the developer containing the organic solvent to the resist film after the puddle-forming step. In the surface drying step, the surface of the substrate is dried by rotating the substrate after the diluting step.

Abstract: A coating liquid containing metal as a metal-containing coating liquid is supplied to a surface to be processed of a substrate by a coating processing unit, whereby a metal-containing coating film is formed on the surface to be processed. The substrate on which the metal-containing coating film has been formed is transported to a metal removal unit by a transport mechanism. A removal liquid for dissolving the metal is supplied to a peripheral portion of the substrate by the metal removal unit such that the metal-containing coating film remains in a region except for the peripheral portion of the surface to be processed of the substrate.

Abstract: During a first period, pure water used as a low-volatile liquid is supplied onto a substrate while the substrate is rotated. After discharge of the low-volatile liquid is stopped, the low-volatile liquid remains in a large region on a DSA film. The low-volatile liquid is held on the DSA film without reacting with the DSA film. During a subsequent second period, an organic solvent is supplied to the substrate while the substrate is rotated. The organic solvent supplied to the substrate is mixed with the low-volatile liquid remaining on the DSA film. In this case, volatilization of the organic solvent is inhibited on the DSA film.

Abstract: A heating plate is stored in a chamber. With a solvent containing gas present in the chamber, a substrate on which a DSA film is formed is held at a position further upward than the heating plate. Thus, neutralization of an atmosphere is performed at a temperature at which microphase separation does not occur. Thereafter, with the solvent containing gas present in the chamber, the substrate is held on an upper surface of the heating plate. Thus, thermal processing is performed on the DSA film on the substrate.

Abstract: An underlayer is formed to cover the upper surface of a substrate and a guide pattern is formed on the underlayer. A DSA film constituted by two types of polymers is formed in a region on the underlayer where the guide pattern is not formed. Thermal processing is performed while a solvent is supplied to the DSA film on the substrate. Thus, a microphase separation of the DSA film occurs. As a result, patterns made of the one polymer and patterns made of another polymer are formed. Exposure processing and development processing are performed in this order on the DSA film after the microphase separation such that the patterns made of another polymer are removed.

Abstract: An underlayer is formed to cover the upper surface of a substrate and a guide pattern is formed on the underlayer. A DSA film constituted by two types of polymers is formed in a region on the underlayer where the guide pattern is not formed. Thermal processing is performed while a solvent is supplied to the DSA film on the substrate. Thus, a microphase separation of the DSA film occurs. As a result, patterns made of the one polymer and patterns made of another polymer are formed. Exposure processing and development processing are performed in this order on the DSA film after the microphase separation such that the patterns made of another polymer are removed.

Abstract: A substrate processing apparatus comprises an indexer block, an anti-reflection film processing block, a resist film processing block, a development processing block, a resist cover film processing block, a resist cover film removal block, a cleaning/drying processing block, and an interface block. An exposure device is arranged adjacent to the interface block in the substrate processing apparatus. The exposure device subjects a substrate to exposure processing by means of an immersion method. In the edge cleaning unit in the cleaning/drying processing block, a brush abuts against an end of the rotating substrate, so that the edge of the substrate before the exposure processing is cleaned. At this time, the position where the substrate is cleaned is corrected.