Abstract: According to one embodiment, a semiconductor device includes a first transistor and a second transistor having a conductivity type which is different from a conductivity type of the first transistor, the first transistor and the second transistor being disposed on a semiconductor substrate such that a gate electrode of the first transistor and a gate electrode of the second transistor are connected to each other. The gate electrode of the first transistor includes first impurities and second impurities which suppress diffusion of the first impurities, and a concentration peak of the first impurities is formed at a shallower position than a concentration peak of the second impurities.

Abstract: An object of the present invention is to provide: a novel gene (polynucleotide) encoding an FAD-conjugated glucose dehydrogenase having excellent properties that it has excellent reactivity to glucose, excellent thermal stability, and excellent substrate-recognition performance and also has a low activity for maltose; a process for the production of the enzyme using a transformant cell transfected with the gene; and a method for the determination of glucose, a reagent composition for use in the determination of glucose, a biosensor for use in the determination of glucose and others, each characterized by using the enzyme obtained.

Abstract: The invention provides a quick-drying disinfectant gel for hands that spreads well in rubbing into hands, spreads easily over the hands, forms no scum, and is not sticky before and after drying. The disinfectant gel for hands of the invention contains 0.01 to 2.0 wt % of a maleic anhydride polymer, 0.01 to 5.0 wt % of polysaccharides, 40 to 95 wt % of a lower alcohol, and water, with the total being 100 wt %.

Abstract: A semiconductor integrated circuit includes: a switching control circuit having a first transistor and a second transistor coupled to an FET, and turning on and off the FET by turning on and off each of the first transistor and the second transistor, the FET attaining an OFF state when the first transistor is in an ON state and the second transistor is in an OFF state; a bias circuit supplying the FET with a bias voltage for turning off the FET when the first transistor and the second transistor are in an OFF state; and a protection control circuit turning off the FET by turning on the first transistor and turning off the second transistor when an abnormality is detected, and turning off the first transistor and the second transistor after a lapse of a predetermined time.

Abstract: Semiconductor elements composing a semiconductor device are formed on a semiconductor substrate. Wirings composed of copper or an alloy mainly composed of copper are formed in wiring layers through interlayer insulation films to connect the semiconductor elements to each other. When the wirings are formed, a temperature of the wirings is held in a first temperature zone covering ±40° C. of a temperature at which a stress migration is most accelerated.

Abstract: It is desirable that some voltage can be supplied as emergency backup even upon occurrence of abnormality such as a failure. The amplifier circuit in a semiconductor device supplies an output signal having a voltage produced by amplifying an input voltage Vin from a variable voltage source to one end of a coil load, and supplies a predetermined fixed voltage of 0V, for example, to the other end of the coil load to rotate the coil load with the voltage difference between these output signals, thus performing loading control of a CD tray and a DVD tray. The semiconductor device clamps the voltage of the output signal to a predetermined non-zero voltage so that a sufficient drive voltage can be obtained even if a loading control terminal T1 is grounded, thus realizing emergency backup loading control of the tray.

Abstract: A semiconductor integrated circuit includes: a switching control circuit having a first transistor and a second transistor coupled to an FET, and turning on and off the FET by turning on and off each of the first transistor and the second transistor, the FET attaining an OFF state when the first transistor is in an ON state and the second transistor is in an OFF state; a bias circuit supplying the FET with a bias voltage for turning off the FET when the first transistor and the second transistor are in an OFF state; and a protection control circuit turning off the FET by turning on the first transistor and turning off the second transistor when an abnormality is detected, and turning off the first transistor and the second transistor after a lapse of a predetermined time.

Abstract: It is desirable that some voltage can be supplied as emergency backup even upon occurrence of abnormality such as a failure. The amplifier circuit in a semiconductor device supplies an output signal having a voltage produced by amplifying an input voltage Vin from a variable voltage source to one end of a coil load, and supplies a predetermined fixed voltage of 0V, for example, to the other end of the coil load to rotate the coil load with the voltage difference between these output signals, thus performing loading control of a CD tray and a DVD tray. The semiconductor device clamps the voltage of the output signal to a predetermined non-zero voltage so that a sufficient drive voltage can be obtained even if a loading control terminal T1 is grounded, thus realizing emergency backup loading control of the tray.

Abstract: A semiconductor device having a capacitor formed in a multilayer wiring structure, the semiconductor device comprising a multilayer wiring structure including a plurality of wiring layers formed on a substrate, a capacitor arranged in a predetermined wiring layer in the multilayer wiring structure and having a lower electrode, a dielectric film, and an upper electrode, a first via formed in the predetermined wiring layer and connected to a top surface of the upper electrode of the capacitor, and a second via formed in an overlying wiring layer stacked on the predetermined wiring layer, the second via being formed on the first via.

Abstract: A semiconductor device having a capacitor formed in a multilayer wiring structure, the semiconductor device comprising a multilayer wiring structure including a plurality of wiring layers formed on a substrate, a capacitor arranged in a predetermined wiring layer in the multilayer wiring structure and having a lower electrode, a dielectric film, and an upper electrode, a first via formed in the predetermined wiring layer and connected to a top surface of the upper electrode of the capacitor, and a second via formed in an overlying wiring layer stacked on the predetermined wiring layer, the second via being formed on the first via.

Abstract: Semiconductor elements composing a semiconductor device are formed on a semiconductor substrate. Wirings composed of copper or an alloy mainly composed of copper are formed in wiring layers through interlayer insulation films to connect the semiconductor elements to each other. When the wirings are formed, a temperature of the wirings is held in a first temperature zone covering ±40° C. of a temperature at which a stress migration is most accelerated.

Abstract: The invention provides a quick-drying disinfectant gel for hands that spreads well in rubbing into hands, spreads easily over the hands, forms no scum, and is not sticky before and after drying. The disinfectant gel for hands of the invention contains 0.01 to 2.0 wt % of a maleic anhydride polymer, 0.01 to 5.0 wt % of polysaccharides, 40 to 95 wt % of a lower alcohol, and water, with the total being 100 wt %.

Abstract: Semiconductor elements composing a semiconductor device are formed on a semiconductor substrate. Wirings composed of copper or an alloy mainly composed of copper are formed in wiring layers through interlayer insulation films to connect the semiconductor elements to each other. When the wirings are formed, a temperature of the wirings is held in a first temperature zone covering ±40° C. of a temperature at which a stress migration is most accelerated.

Abstract: There is provided a method of manufacturing a semiconductor device having a number of wiring layers, comprising forming an underlayer, the underlayer including a substrate, at least one underlayer wiring layer provided on the substrate, and a first attachment surface, forming at least one upper structure, the upper structure including at least one upper wiring layer and a second attachment surface, and positioning the upper structure and the underlayer and attaching the first and second attachment surfaces to each other.

Abstract: One via contact through which upper and lower interconnections of a multilevel interconnection are connected to each other is provided when the width or volume of the lower interconnection is not larger than a given value. A plurality of via contacts are arranged at regular intervals, each of which is not larger than a given value, in an effective diffusion region of voids included in the lower interconnection, when the width or volume of the lower interconnection exceeds a given value.

Abstract: A semiconductor device having a capacitor formed in a multilayer wiring structure, the semiconductor device comprising a multilayer wiring structure including a plurality of wiring layers formed on a substrate, a capacitor arranged in a predetermined wiring layer in the multilayer wiring structure and having a lower electrode, a dielectric film, and an upper electrode, a first via formed in the predetermined wiring layer and connected to a top surface of the upper electrode of the capacitor, and a second via formed in an overlying wiring layer stacked on the predetermined wiring layer, the second via being formed on the first via.

Abstract: One via contact through which upper and lower interconnections of a multilevel interconnection are connected to each other is provided when the width or volume of the lower interconnection is not larger than a given value. A plurality of via contacts are arranged at regular intervals, each of which is not larger than a given value, in an effective diffusion region of voids included in the lower interconnection, when the width or volume of the lower interconnection exceeds a given value.

Abstract: One via contact through which upper and lower interconnections of a multilevel interconnection are connected to each other is provided when the width or volume of the lower interconnection is not larger than a given value. A plurality of via contacts are arranged at regular intervals, each of which is not larger than a given value, in an effective diffusion region of voids included in the lower interconnection, when the width or volume of the lower interconnection exceeds a given value.

Abstract: Semiconductor elements composing a semiconductor device are formed on a semiconductor substrate. Wirings composed of copper or an alloy mainly composed of copper are formed in wiring layers through interlayer insulation films to connect the semiconductor elements to each other. When the wirings are formed, a temperature of the wirings is held in a first temperature zone covering 40° C. of a temperature at which a stress migration is most accelerated.