Abstract: There is provided a process for preparing a composite material of an oxide crystal film and a substrate by forming a Y123 type oxide crystal film from a solution phase on a substrate using a liquid phase method, wherein problems such as cracking of the oxide crystal film, separation of the oxide crystal film from the substrate, and development of a reaction layer between the substrate and the solution can be minimized. The solvent for forming the solution phase uses either a BaO—CuO—BaF2 system or a BaO—CuO—Ag—BaF2 system, and when the substrate with a seed crystal film bonded to the surface is brought in contact with the solution to form (grow) the oxide crystal film on the substrate, the temperature of the solution is controlled to a temperature of no more than 850° C.

Abstract: An object of the present invention is to increase adhesiveness between thin films, particularly a high molecular film formed on an insulating surface, and the present invention provides a semiconductor device with high reliability and a method for manufacturing the semiconductor device with high yield. A semiconductor device of the present invention comprises a laminate structure formed in close contact with an organic insulating film on a hydrophobic surface of an inorganic insulating film including silicon and nitrogen. A film having the hydrophobic surface is an insulating film having a contact angle of water of equal to or more than 30°, preferably of equal to or more than 40°.

Abstract: In a high frequency transmission line having a dielectric substrate and a conductor line which is provided on the dielectric substrate for allowing electric current to flow therethrough, the conductor line has a non-grain-boundary oxide superconductor layer with twin walls but without grain boundaries. The high frequency transmission line is in the form of a plane circuit. It is preferable that an oriented oxide superconductor layer is provided between the dielectric substrate and the non-grain-boundary oxide superconductor layer.

Abstract: A method of producing a tape-shaped superconducting wire is provided. The wire maintains a high critical temperature and a high critical current density along the overall length thereof. In this method, raw material powder for the oxide superconductor is first charged in a silver sheath and the sheath charged with the powder is subjected to plastic working to prepare a first flat type wire. On the other hand, a second wire consisting of a tape wire formed by coating a surface of a flat type wire having at least an outer surface consisting essentially of silver or a silver alloy with a metal oxide or ceramics, or a tape wire containing ceramics fibers and a binder dissipated by heat treatment is prepared. The first and second wires are layered with each other, and tightly wound in a pancake coil shape. The wires wound in the pancake coil shape are heat treated for sintering the oxide superconductor. After the heat treatment, the first wire is separated from the second wire.