Abstract: With a view to preventing increases in forward voltage due to a change with the lapse of time of a bipolar semiconductor device using a silicon carbide semiconductor, a buffer layer, a drift layer and other p-type and n-type semiconductor layers are formed on a growth surface, which is given by a surface of a crystal of a silicon carbide semiconductor having an off-angle ? of 8 degrees from a (000-1) carbon surface of the crystal, at a film growth rate having a film-thickness increasing rate per hour h of 10 ?m/h, which is three times or more higher than conventional counterparts. The flow rate of silane and propane material gases and dopant gases is largely increased to enhance the film growth rate.

Abstract: With a view to preventing increases in forward voltage due to a change with the lapse of time of a bipolar semiconductor device using a silicon carbide semiconductor, a buffer layer, a drift layer and other p-type and n-type semiconductor layers are formed on a growth surface, which is given by a surface of a crystal of a silicon carbide semiconductor having an off-angle ? of 8 degrees from a (000-1) carbon surface of the crystal, at a film growth rate having a film-thickness increasing rate per hour h of 10 ?m/h, which is three times or more higher than conventional counterparts. The flow rate of silane and propane material gases and dopant gases is largely increased to enhance the film growth rate.

Abstract: [Object] To further reduce the concentrations of basic amine compounds remaining in decarbonated flue gas. [Means of Solution] A CO2 recovery system includes an absorber 2 and a regenerator 3. The absorber 2 includes a CO2 absorbing section 21 and at least one water-washing section 22. The CO2 absorbing section 21 allows flue gas 101 to come into contact with a basic amine compound absorbent 103 so that the basic amine compound absorbent 103 absorbs CO2 in the flue gas 101. The at least one water-washing section 22 allows the decarbonated flue gas 101A in which the amount of CO2 has been reduced in the CO2 absorbing section 21 to come into contact with wash water 104A and 104B to reduce the amounts of the basic amine compounds entrained in the decarbonated flue gas 101A. The regenerator 3 releases the CO2 from the basic amine compound absorbent 103 containing CO2 absorbed therein.

Abstract: Disclosed is a method for predicting about the carcinogenicity of a substance of interest in a rodent, which comprises the steps of: administering a solution of the substance to a test group and administering a solvent used in the solution to a control group; extracting mRNA from each of the test group and the control group, and measuring the expression level of mRNA for each of genes obtained by selecting at least one gene from (A) genes each comprising a nucleotide sequence depicted in any one of SEQ ID NOs: 1 to 5, (B) genes each comprising a nucleotide sequence depicted in any one of SEQ ID NOs: 6 to 8 and (C) genes each comprising a nucleotide sequence depicted in any one of SEQ ID NOs: 9 to 32; determining whether or not a significant difference in the level of mRNA expressed from the gene is observed between the test group and the control group; and determining that the substance has carcinogenicity when a significant difference in the level of the expression of mRNA from any one of the genes is observ

Abstract: With a view to preventing increases in forward voltage due to a change with the lapse of time of a bipolar semiconductor device using a silicon carbide semiconductor, a buffer layer, a drift layer and other p-type and n-type semiconductor layers are formed on a growth surface, which is given by a surface of a crystal of a silicon carbide semiconductor having an off-angle ? of 8 degrees from a (000-1) carbon surface of the crystal, at a film growth rate having a film-thickness increasing rate per hour h of 10 ?m/h, which is three times or more higher than conventional counterparts. The flow rate of silane and propane material gases and dopant gases is largely increased to enhance the film growth rate.

Abstract: With a view to preventing increases in forward voltage due to a change with the lapse of time of a bipolar semiconductor device using a silicon carbide semiconductor, a buffer layer, a drift layer and other p-type and n-type semiconductor layers are formed on a growth surface, which is given by a surface of a crystal of a silicon carbide semiconductor having an off-angle ? of 8 degrees from a (000-1) carbon surface of the crystal, at a film growth rate having a film-thickness increasing rate per hour h of 10 ?m/h, which is three times or more higher than conventional counterparts. The flow rate of silane and propane material gases and dopant gases is largely increased to enhance the film growth rate.

Abstract: A user terminal apparatus and a control method therefor, which constitutes part of a thin client system which transfers data to a file server and stores the data therein. The system aggregates user data in a file server by controlling writing into a secondary storage device of the user terminal and controlling writing out to an external storage medium, to prevent loss and leakage of confidential information.

Abstract: A display device includes a first wiring line group of wiring lines connected to odd-number-th scan lines, a second wiring line group of wiring lines connected to even-number-th scan lines, a first inspection wiring line connected to first wiring lines of the first wiring line group, a second inspection wiring line connected to second wiring lines of the first wiring line group, which neighbor the first wiring lines, a third inspection wiring line connected to third wiring lines of the second wiring line group, and a fourth inspection wiring line connected to fourth wiring lines of the second wiring line group, which neighbor the third wiring lines.

Abstract: A liquid crystal display device including gate wiring parts for supplying a scanning signal to switching elements formed in a matrix form in a display area, and source wiring parts for supplying a video signal to the switching elements, the liquid crystal display device having a plurality of inspection switching elements arranged in an area outside the display area, and connected to the gate wiring parts or the source wiring parts and a wiring part for electrically and mutually connecting source electrodes of the inspection switching elements by high resistance elements.

Abstract: With a view to preventing increases in forward voltage due to a change with the lapse of time of a bipolar semiconductor device using a silicon carbide semiconductor, a buffer layer, a drift layer and other p-type and n-type semiconductor layers are formed on a growth surface, which is given by a surface of a crystal of a silicon carbide semiconductor having an off-angle ? of 8 degrees from a (000-1) carbon surface of the crystal, at a film growth rate having a film-thickness increasing rate per hour h of 10 ?m/h, which is three times or more higher than conventional counterparts. The flow rate of silane and propane material gases and dopant gases is largely increased to enhance the film growth rate.

Abstract: A method is provided that automatically saves data on a user terminal of a thin client system to a file server or to the user terminal by appropriately and efficiently sorting the data. System update data such as a patch for the user terminal and confidential data that should be saved to the server are distinguished when written to a secondary storage device, and separately cached into memory. Then, the confidential data that should be saved to the server is automatically uploaded to the file server at any given timing, for example, at shut-down of the terminal, whereby a minimum amount of data can be efficiently saved to the file server.

Abstract: A silicon carbide Zener diode is a bipolar semiconductor device that has a mesa structure and includes a silicon carbide single crystal substrate of a first conductivity type, formed thereon, a silicon carbide conductive layer of a first conductivity type, and a silicon carbide conductive layer of a second conductivity type formed on the silicon carbide conductive layer of a first conductivity type, wherein a depletion layer that is formed under reverse bias at a junction between the silicon carbide conductive layer of a first conductivity type and the silicon carbide conductive layer of a second conductivity type does not reach a mesa corner formed in the silicon carbide conductive layer of a first conductivity type.

Abstract: An ink jet printer is provided with an ink jet head that executes a printing action in which ink is discharged toward a print medium, a transportation device that transports the print medium, and a controller that controls the ink jet head to execute the printing action. The controller controls the ink jet head to execute the printing action when the ink jet printer has finished receiving a predetermined amount of print data. In a case where a time since a last printing action has exceeded a predetermined time, the controller prevents the ink jet head from executing the printing action against a partially printed print medium, and controls the transportation device to eject the print medium.

Abstract: Bipolar semiconductor devices have a Zener voltage controlled very precisely in a wide range of Zener voltages (for example, from 10 to 500 V). A bipolar semiconductor device has a mesa structure and includes a silicon carbide single crystal substrate of a first conductivity type, a silicon carbide conductive layer of a first conductivity type, a highly doped layer of a second conductivity type and a silicon carbide conductive layer of a second conductivity type which substrate and conductive layers are laminated in the order named.

Abstract: In a bipolar silicon carbide semiconductor device in which an electron and a hole recombine with each other during current passage within a silicon carbide epitaxial film grown from a surface of a silicon carbide single crystal substrate, an object described herein is the reduction of defects which are the nuclei of a stacking fault which is expanded by current passage, thereby suppressing the increase of the forward voltage of the bipolar silicon carbide semiconductor device. In a method for producing a bipolar silicon carbide semiconductor device, the device is subjected to a thermal treatment at a temperature of 300° C. or higher in the final step of production. Preferably, the above-mentioned thermal treatment is carried out after the formation of electrodes and then the resulting bipolar silicon carbide semiconductor device is mounted in a package.

Abstract: In a bipolar semiconductor device such that electrons and holes are recombined in a silicon carbide epitaxial film grown from the surface of a silicon carbide single crystal substrate at the time of on-state forward bias operation; an on-state forward voltage increased in a silicon carbide bipolar semiconductor device is recovered by shrinking the stacking fault area enlarged by on-state forward bias operation. In a method of this invention, the bipolar semiconductor device in which the stacking fault area enlarged and the on-state forward voltage has been increased by on-state forward bias operation, is heated at a temperature of higher than 350° C.

Abstract: A method of predicting an effect of a test chemical on living organisms, which comprises: a step of administering a plurality of chemicals whose effects on living organisms are known, to respective chemical dosed groups, administering a test chemical to a test chemical dosed group, collecting proteins from each group after a definite period of time, separating the proteins by two-dimensional gel electrophoresis, measuring the signal intensities of spots of the proteins and modified proteins formed therefrom, and calculating a signal intensity ratio of at least two spots, and a step of comparing the signal intensity ratio of test chemical dosed group with the signal intensity ratio of each chemical dosed group.

Abstract: Disclosed is an episulfide group-substituted silicon compound (A) having a backbone structure represented by the following formula (1). (1) (In the formula, R1s respectively represent a substituent having an episulfide group, an unsubstituted or unsaturated acyloxy group-substituted (C1-C10) alkyl group or an aryl group. R1s may be the same as or different from one another, but at least one R1 in a molecule is a substituent having an episulfide group.

Abstract: In a SiC bipolar semiconductor device with a mesa structure having a SiC drift layer of a first conductive type and a SiC carrier injection layer of a second conductive type that are SiC epitaxial layers grown from a surface of a SiC single crystal substrate, the formation of stacking faults and the expansion of the area thereof are prevented and thereby the increase in forward voltage is prevented. Further, a characteristic of withstand voltage in a reverse biasing is improved. An forward-operation degradation preventing layer is formed on a mesa wall or on a mesa wall and a mesa periphery to separate spatially the surface of the mesa wall from a pn-junction interface. In one embodiment, the forward-operation degradation preventing layer is composed of a silicon carbide low resistance layer of a second conductive type that is equipotential during the application of a reverse voltage.

Abstract: An ink jet head is presented that decreases the density in wiring patterns to be connected to a large number of actuator terminals formed on a main body of the ink jet head while ensuring large spacing between the wirings. The ink jet head comprises a main body, a driver IC, and a sheet. The main body comprises a plurality of nozzles, a plurality of pressure chambers, a plurality of actuators, and a plurality of actuator terminals distributed on a surface of the main body. The driver IC can select any actuator terminal among the plurality of actuator terminals and transmit a driving voltage to the selected actuator terminal. The sheet mounts the driver IC at a first surface of the sheet and is fixed to the main body at a second surface.