Abstract: The object of the present invention is to provide a process for forming a resist pattern that is capable to utilize excimer laser beam, the thickening level of the resist pattern is controllable uniformly, constantly and precisely, without being affected substantially by environmental changes such as temperatures and humidity, and storage period, and space pattern of resist may be formed with a fineness exceeding exposure limits or resolution limits of available irradiation sources. The process for producing a semiconductor device is characterized in that forming a resist pattern on a surface of workpiece, coating a resist pattern thickening material on the resist pattern, thickening the resist pattern to form a thickened resist pattern, and patterning the surface of workpiece by etching using the thickened resist pattern as a mask, wherein the resist pattern thickening material comprises a resin, and exhibits a pH value of above 7 and not over 14 at coating or after coating on the resist pattern.

Abstract: To provide a material including: a silicon-containing polymer having at least an alkali-soluble group and is represented by the following general formula (1); and an organic solvent capable of dissolving the silicon-containing polymer. (SiO4/2)a(R1tSiO(4-t)/2)b(O1/2R2)c??general formula (1) where R1 represents at least one of a monovalent organic group, hydrogen atom and hydroxyl group, R2 represents at least one of a monovalent organic group and hydrogen atom (where R1 and R2 each may appear twice or more, and at least one of R1 and R2 contains an alkali-soluble group), “t” represents an integer of 1 to 3, “a,” “b,” and “c” represent the relative proportions of their units (where a?0, b?0 and c?0, and “a,” “b,” and “c” are not 0 at the same time), and (R1tSiO(4-t)/2)b may appear twice or more.

Abstract: A resist pattern thickening material is disclosed that can utilize ArF excimer laser light; which, when applied over a resist pattern such as an ArF resist having a line pattern or the like, can thicken the resist pattern regardless of the size of the resist pattern; which has excellent etching resistance; and which is suited for forming a fine space pattern or the like, exceeding the exposure limits. Also disclosed is a process for forming a resist pattern and a method for manufacturing a semiconductor device, wherein the resist pattern thickening material of the present invention is suitably utilized.

Abstract: A method for producing a semiconductor device includes forming a resist pattern by coating a resist pattern thickening material to cover the surface of the resist pattern, baking the resist pattern thickening material, and developing and separating the resist pattern thickening material, wherein at least one of the coating, the baking and the developing is carried out plural times.

Abstract: To provide a resist matter improving material containing C4-11 linear alkanediol, and water.

Abstract: The present invention provides a resist pattern thickening material, which can utilize ArF excimer laser light; which, when applied over a resist pattern such as an ArF resist having a line pattern or the like, can thicken the resist pattern regardless of the size of the resist pattern; which has excellent etching resistance; and which is suited for forming a fine space pattern or the like, exceeding the exposure limits. The present invention also provides a process for forming a resist pattern and a method for manufacturing a semiconductor device, wherein the resist pattern thickening material of the present invention is suitably utilized.

Abstract: It is an object of the present invention to provide a method for forming a resist pattern, in which ArF excimer laser light can be utilized as the exposure light for the patterning, the resist patterns can be thickened stably to an intended thickness independently of the sizes of the resist patterns, and the fineness of the fine space patterns can surpass the limit in terms of exposure or resolution of exposure devices. The method for forming a resist pattern of the present invention comprises at least forming a resist pattern, coating a resist pattern thickening material to cover the surface of the resist pattern, baking the resist pattern thickening material, and developing and separating the resist pattern thickening material, wherein at least one of the coating, the baking and the developing is carried out plural times.

Abstract: To provide a thiopyran derivative, having a structure expressed by the following general formula 1: where X is O or S; R1 is —H, —CH3, C2-4 alkyl group, thioether group, or ketone group; R2 is —H, —CH3, or trifluoromethyl group; and R1 and R2 may be identical to or different from each other.

Abstract: To provide a thiopyran derivative, having a structure expressed by the following general formula 1: where X is O or S; R1 is —H, —CH3, C2-4 alkyl group, thioether group, or ketone group; R2 is —H, —CH3, or trifluoromethyl group; and R1 and R2 may be identical to or different from each other.

Abstract: To provide a pattern forming method, which contains: forming a first resist pattern on a processing surface using a first resist composition; forming a coating layer using a coating material so as to cover a surface of the first resist pattern; applying a second resist composition over the first resist pattern above which the coating layer has been formed so as not to dissolve the first resist pattern with the second resist composition to thereby form a second resist film; and selectively exposing the second resist film to exposure light and developing the second resist film to thereby expose the first resist pattern to the air, as well as forming a second resist pattern in an area of the processing surface where the first resist pattern has not been formed.

Abstract: A pick-up style utility vehicle according to the present invention has a front seat, a rear seat, a cargo bed, a cabin frame surrounding a riding space, and a screen shield partitioning the cargo bed and a rear riding space in front of the cargo bed. The cargo bed can be changed between an expanded state in which the cargo bed is expanded in a front direction to the rear riding space and a non-expanded state not occupying the rear riding space. A backrest for the rear seat is attached to the screen shield. The screen shield can be shifted between a position in the expanded state and a position in the non-expanded state when a seat bottom and the backrest of the rear seat are changed between a retracted state in which the seat bottom and the backrest are erected on the same straight line and a seatable used state.

Abstract: A resist pattern thickening material containing a resin, a cyclic compound expressed by the general formula 1, at least one of compounds expressed by the general formulae 2 to 3, respectively, and water:

Abstract: To provide a dithiane derivative, having a structure expressed by the following general formula 1: where R1 is —H, or —CH3, a polymer containing a monomer unit containing the dithiane derivative, a resist composition containing the polymer, and a method for manufacturing a semiconductor device using the resist composition.

Abstract: An optical disk device includes an intermittent reproducing unit to perform an intermittent reproducing process to reproduce data recorded on an optical disk in a forward or reverse direction and at specific time intervals, each removing predetermined amount of data, an intermittent reproduction start instruction unit, upon receiving an instruction to start the intermittent reproducing process, to designate an intermittent reproduction start position and an intermittent reproducing direction, and to issue an instruction, and a storage unit to store the intermittent reproduction start position as information concerning a recording position for data skipped and unreproduced during a current intermittent reproducing process, when the instruction is issued.

Abstract: This digital broadcast recording device includes a tuner unit, a channel table recording unit, an image output unit, an OSD generation unit, an actuation unit, and a channel presetting unit. The channel table recording unit records a channel table. An auto presetting unit sets virtual channels. If the number of a virtual channel is duplicated upon several physical channels, the channel presetting unit commands the OSD generation unit to display an OSD to the effect that this number is duplicated. And, when the actuation unit has received a predetermined actuation input, the channel presetting unit searches for a vacant channel.

Abstract: A monomer, which is represented by General Formula I: wherein, each of R1 and R3 is either —H group or —CH3 group, and R1 and R3 are identical or different to each other; R2 is either a phenyl group or an adamanthyl group; and Q1 is a C1-4 perfluoroalkyl group.

Abstract: The object of the present invention is to provide a process for forming a resist pattern that is capable to utilize excimer laser beam, the thickening level of the resist pattern is controllable uniformly, constantly and precisely, without being affected substantially by environmental changes such as temperatures and humidity, and storage period, and space pattern of resist may be formed with a fineness exceeding exposure limits or resolution limits of available irradiation sources. The process for producing a semiconductor device is characterized in that forming a resist pattern on a surface of workpiece, coating a resist pattern thickening material on the resist pattern, thickening the resist pattern to form a thickened resist pattern, and patterning the surface of workpiece by etching using the thickened resist pattern as a mask, wherein the resist pattern thickening material comprises a resin, and exhibits a pH value of above 7 and not over 14 at coating or after coating on the resist pattern.

Abstract: The object of the present invention is to provide a process for forming a resist pattern that is capable to utilize excimer laser beam, the thickening level of the resist pattern is controllable uniformly, constantly and precisely, without being affected substantially by environmental changes such as temperatures and humidity, and storage period, and space pattern of resist may be formed with a fineness exceeding exposure limits or resolution limits of available irradiation sources. The process for producing a semiconductor device is characterized in that forming a resist pattern on a surface of workpiece, coating a resist pattern thickening material on the resist pattern, thickening the resist pattern to form a thickened resist pattern, and patterning the surface of workpiece by etching using the thickened resist pattern as a mask, wherein the resist pattern thickening material comprises a resin, and exhibits a pH value of above 7 and not over 14 at coating or after coating on the resist pattern.

Abstract: To provide a thiopyran derivative, having a structure expressed by the following general formula 1: where X is O or S; R1 is —H, —CH3, C2-4 alkyl group, thioether group, or ketone group; R2 is —H, —CH3, or trifluoromethyl group; and R1 and R2 may be identical to or different from each other.

Abstract: The present invention provides a resist pattern thickening material, which can utilize ArF excimer laser light; which, when applied over a resist pattern to be thickened e.g., in form of lines and spaces pattern, can thicken the resist pattern to be thickened regardless of the size of the resist pattern to be thickened; and which is suited for forming a fine space pattern or the like, exceeding exposure limits. The present invention also provides a process for forming a resist pattern and a process for manufacturing a semiconductor device, wherein the resist pattern thickening material of the present invention is suitably utilized.