Abstract: To provide a thiopyran derivative, having a structure expressed by the following general formula 1: where X is O or S; R1 is —H, —CH3, C2-4 alkyl group, thioether group, or ketone group; R2 is —H, —CH3, or trifluoromethyl group; and R1 and R2 may be identical to or different from each other.

Abstract: A resist pattern thickening material has resin, a crosslinking agent and a compound having a cyclic structure, or resin having a cyclic structure at a part. A resist pattern has a surface layer on a resist pattern to be thickened with etching rate (nm/s) ratio of the resist pattern to be thickened the surface layer of 1.1 or more, under the same condition, or a surface layer to a resist pattern to be thickened. A process for forming a resist pattern includes applying the thickening material after forming a resist pattern to be thickened on its surface. A semiconductor device has a pattern formed by the resist pattern. A process for manufacturing the semiconductor device has applying, after forming a resist pattern to be thickened, the thickening material to the surface of the resist pattern to be thickened, and patterning the underlying layer by etching, the pattern as a mask.

Abstract: A resist pattern thickening material has resin, a crosslinking agent and a compound having a cyclic structure, or resin having a cyclic structure at a part. A resist pattern has a surface layer on a resist pattern to be thickened with etching rate (nm/s) ratio of the resist pattern to be thickened the surface layer of 1.1 or more, under the same condition, or a surface layer to a resist pattern to be thickened. A process for forming a resist pattern includes applying the thickening material after forming a resist pattern to be thickened on its surface. A semiconductor device has a pattern formed by the resist pattern. A process for manufacturing the semiconductor device has applying, after forming a resist pattern to be thickened, the thickening material to the surface of the resist pattern to be thickened, and patterning the underlying layer by etching, the pattern as a mask.

Abstract: A resist composition, which contains: a silicon compound having at least an alkyl-soluble group which may be substituted with a substituent; and a resin having an alkali-soluble group which may be substituted with an acid labile group, wherein the resist composition is designed to be subjected to immersion lithography.

Abstract: The present invention provides a resist pattern thickening material which can thicken a resist pattern and form a fine space pattern, exceeding exposure limits of exposure light used during patterning. The resist pattern thickening material contains a resin and a phase transfer catalyst. The present invention also provides a process for forming a resist pattern and a process for manufacturing a semiconductor device, wherein the resist pattern thickening material of the present invention is suitably utilized.

Abstract: An available term of use of the player is set in terms of the number of dates or a playing time. If it is determined by a lock-setting determining unit that the player is lock-set when an optical disk is loaded, the player is lock-released by a lock releasing unit. After the player has been lock-released, if the available term is extended as a result that it is determined by an available term determining unit that the available term has expired or if it is determined that the available term has not expired yet, a playing start processing unit proceeds to processing of starting the playing. If the available term has expired, but should not be extended, the player is lock-set by a lock setting unit.

Abstract: An optical disk device includes a recording and reading means which performs recording of data upon, or reading of data from, an optical disk upon which are stored an ID, number of times information, and recording management information. Furthermore, when recording of data upon the optical disk has been completed, this optical disk device stores the recording management information, the number of times information, and the ID of the optical disk in a storage means in mutual correspondence. And, when the optical disk has been mounted, the recording and reading means decides whether a first situation or a second situation holds, using the ID and the number of times information of the optical disk as a key. And, if the second situation holds, the recording and reading means utilizes the recording management information in the storage means.

Abstract: The present invention provides a resist pattern thickening material and the like which can thicken a resist pattern and form a fine space pattern. The resist pattern thickening material contains: a resin; a crosslinking agent; and at least one type selected from cationic surfactants, amphoteric surfactants, and non-ionic surfactants selected from alkoxylate surfactants, fatty acid ester surfactants, amide surfactants, alcohol surfactants, and ethylene diamine surfactants. In a process for forming a resist pattern of the present invention, after a resist pattern is formed, the thickening material is applied onto a surface of the pattern. A process for manufacturing a semiconductor device of the present invention includes: after forming a resist pattern on an underlying layer, applying the thickening material on a surface of the pattern so as to thicken the pattern; and a step of patterning the underlying layer by etching by using the pattern.

Abstract: The present invention provides a resist composition which enables uniformly thickening a resist pattern with a resist pattern thickening material, regardless of the direction, spacing variations of the resist pattern, and the components of the resist pattern thickening material and enables forming a fine space pattern of resist, exceeding exposure limits of light sources of exposure devices at low cost, easily, and efficiently. The resist composition contains an alicyclic compound (melting point: 90° C. to 150° C.), and a resin. The method for manufacturing a semiconductor device includes forming a resist pattern on a surface of a workpiece to be processed by using a resist composition and applying a resist pattern thickening material on the surface of the workpiece so as to cover the surface of the resist pattern to thicken the resist pattern; and patterning the surface of the workpiece by etching thereof using the thickened resist pattern as a mask.

Abstract: The present invention can provide a resist cover film-forming material which is suitably used for a resist cover film for liquid immersion exposure and can transmit ArF excimer laser lights and provide a process for forming a resist pattern using the resist cover film-forming material. The resist cover film-forming material contains a resin having an alicyclic skeleton at any of the main chain and the side chains; it is nonphotosensitive and is used in forming a resist cover film that covers a resist film during liquid immersion exposure. The process for forming of a resist pattern includes forming a resist film on a surface of a workpiece to be processed, forming a resist cover film on the resist film using the resist cover film-forming material of the present invention, irradiating the resist film with exposure light through the resist cover film by liquid immersion exposure, and developing the resist film.

Abstract: The present invention provides a resist pattern thickening material and the like which can thicken a resist pattern and form a fine space pattern. The resist pattern thickening material contains: a resin; a crosslinking agent; and at least one type selected from cationic surfactants, amphoteric surfactants, and non-ionic surfactants selected from alkoxylate surfactants, fatty acid ester surfactants, amide surfactants, alcohol surfactants, and ethylene diamine surfactants. In a process for forming a resist pattern of the present invention, after a resist pattern is formed, the thickening material is applied onto a surface of the pattern. A process for manufacturing a semiconductor device of the present invention includes: after forming a resist pattern on an underlying layer, applying the thickening material on a surface of the pattern so as to thicken the pattern; and a step of patterning the underlying layer by etching by using the pattern.

Abstract: The present invention provides a resist pattern thickening material, which can utilize ArF excimer laser light; which, when applied over a resist pattern to be thickened e.g., in form of lines and spaces pattern, can thicken the resist pattern to be thickened regardless of the size of the resist pattern to be thickened; and which is suited for forming a fine space pattern or the like, exceeding exposure limits. The present invention also provides a process for forming a resist pattern and a process for manufacturing a semiconductor device, wherein the resist pattern thickening material of the present invention is suitably utilized.

Abstract: The present invention provides a resist pattern thickening material, which can utilize ArF excimer laser light; which, when applied over a resist pattern to be thickened e.g., in form of lines and spaces pattern, can thicken the resist pattern to be thickened regardless of the size of the resist pattern to be thickened; and which is suited for forming a fine space pattern or the like, exceeding exposure limits. The present invention also provides a process for forming a resist pattern and a process for manufacturing a semiconductor device, wherein the resist pattern thickening material of the present invention is suitably utilized.

Abstract: A monomer, which is represented by General Formula I: wherein, each of R1 and R3 is either —H group or —CH3 group, and R1 and R3 are identical or different to each other; R2 is either a phenyl group or an adamanthyl group; and Q1 is a C1-4 perfluoroalkyl group.

Abstract: The object of the present invention is to provide a resist pattern thickening material, etc. which, when coated over a resist pattern formed of ArF resist material, etc., can efficiently thicken the resist pattern such as lines and spaces pattern, etc. regardless of the composition of ArF resist material, and the like; which can easily control the thickening amount of resist pattern by process condition; and which can easily and efficiently form a fine space pattern beyond the exposure (resolution) limits of light sources of the exposure devices at low cost. The resist pattern thickening material of the present invention comprises a solubilizer which melts the resist pattern at the temperature near its melting point and- a water-soluble element. The process for forming a resist pattern of the present invention comprises forming a resist pattern and coating a resist pattern thickening material of the present invention over the surface of the resist pattern.

Abstract: According to an aspect of an embodiment, a resist composition for immersion exposure includes a matrix resin so that the matrix resin is turned alkali-soluble by an acid. The resist composition further includes a resin having a side chain containing silicon, the resin being capable of being turned alkali-soluble by an acid, the content of the silicon with respect to the total amount of the matrix resin and the resin being 1% by mass or less.

Abstract: A negative resist composition containing an alkaline-soluble resin as a base material, in which an oxetane structure represented by the following formula (1): is contained in a structure of the alkaline-soluble resin or in a structure of a compound used in combination with the alkaline-soluble resin, is disclosed.

Abstract: The present invention provides a surface-modified resist pattern which contains a resist pattern having low etch resistance by itself but having a modified and etch-resistant surface and is suitable for fine and high-definition patterning, and a method for efficiently forming the same. The method forms a surface-modified resist pattern having an etch-resistant surface by selectively depositing an organic compound on a resist pattern. The deposition is preferably carried out by using plasma of a gas. The method preferably includes arranging the organic compound so as to face the resist pattern, the organic compound having been deposited on a base material, and depositing the organic compound onto the resist pattern. The plasma of the gas is preferably introduced from an opposite side of the base material to the organic compound deposited thereon.

Abstract: The resist composition of the present invention contains at least one of a tannin and a derivative thereof. The method of forming a resist pattern of the present invention includes: forming a resist film on a surface of an object to be processed, by using the resist composition; and exposing and developing the resist film. The method of manufacturing a semiconductor device of the present invention includes: forming a resist film on a surface of an object to be processed, by using the resist composition; exposing and developing the resist film to form a resist pattern; and patterning the surface of the object by performing an etching through the resist pattern as a mask.

Abstract: To provide a method for easily forming microscopic patterns exceeding the limit of exposure in the patterning technique utilizing the photolithography method in the vacuum deep ultraviolet ray region, a resist pattern swelling material is comprised by mixing a water-soluble or alkali-soluble composition comprising a resin and a cross linking agent and any one of a non-ionic interfacial active agent and an organic solvent selected from a group of the alcohol based, chain or cyclic ester based, ketone based, chain or cyclic ether based organic solvents.