Abstract: A vehicle display control device, includes a memory; and a processor coupled to the memory. The processor is configured to cause a display unit provided in a vehicle cabin to display an inducement image requesting that an occupant grip a steering wheel in a case in which it is necessary for the occupant to grip the steering wheel, and cause the display unit to display the inducement image more prominently in a case of requesting that the occupant grip the steering wheel before the vehicle switches from an autonomous driving mode to a manual driving mode as the vehicle is continuing to drive autonomously, than in a case of requesting that the occupant continue to grip the steering wheel as the vehicle is continuing to drive autonomously.

Abstract: A semiconductor device includes an n-type semiconductor substrate, a trench, and a gate electrode formed in the trench via a gate insulating film. An absolute value of a difference between a thickness of the gate insulating film formed on a corner portion of the trench and a thickness of the gate insulating film formed on the bottom portion of the trench is smaller than an absolute value of a difference between the thickness of the gate insulating film formed on the corner portion of the trench and a thickness of the gate insulating film formed on the sidewall portion of the trench.

Abstract: A method of manufacturing a semiconductor device includes: a grind step of forming a small thickness portion and a large thickness portion surrounding the small thickness portion in plan view by grinding a back surface of a semiconductor wafer; a preparation step of preparing a wafer holding member including a wafer placement surface and a back surface opposite to the wafer placement surface and having a larger thickness than a difference between a thickness of the large thickness portion and a thickness of the small thickness portion; and a placement step of placing the semiconductor wafer on the wafer holding member so that the small thickness portion of the semiconductor wafer and the wafer placement surface of the wafer holding member are in contact with each other on the back surface side of the semiconductor wafer.

Abstract: A semiconductor device includes an n-type semiconductor substrate, a trench, a gate electrode formed in the trench via the gate insulating film, a p-type base region formed in the semiconductor substrate, and an n-type emitter region formed in the base region. The trench extends in a Y direction, in a plan view. Adjacent ones of a plurality of emitter regions are formed to be spaced apart from each other by a distance, along the Y direction. The distance is wider than ? of a width of each of the emitter regions in the Y direction and narrower than the width.

Abstract: A gate electrode is formed inside a trench via a gate insulating film. The gate insulating film formed on a semiconductor substrate is removed. An insulating film is formed on the semiconductor substrate. A p-type base region is formed in the semiconductor substrate. An n-type emitter region is formed in the base region. Hydrogen annealing process is performed to the semiconductor substrate. A boundary between the base region and the emitter region is located at a position deeper than the insulating film formed between a side surface of the trench and the gate insulating film.

Abstract: An outdoor unit of an air conditioner coupled to an indoor unit by a liquid pipe and a gas pipe, includes: a compressor; an outdoor heat exchanger; a discharge pipe coupled to a refrigerant discharge side of the compressor; an intake pipe coupled to a refrigerant intake side of the compressor; an outdoor-unit high-pressure gas pipe coupled to the discharge pipe; an outdoor-unit low-pressure gas pipe coupled to the intake pipe; an outdoor-unit liquid pipe that couples a first refrigerant entry/exit opening of the outdoor heat exchanger and the liquid pipe together; a bypass pipe coupled to the outdoor-unit liquid pipe; a first flow-passage switcher coupled to a second refrigerant entry/exit opening of the outdoor heat exchanger, the discharge pipe, the intake pipe, and the bypass pipe; and a second flow-passage switcher coupled to the gas pipe, the outdoor-unit high-pressure gas pipe, and the outdoor-unit low-pressure gas pipe.

Abstract: In a process of implanting ions of an n-type impurity for threshold control into a semiconductor substrate surrounded by an element isolation portion, a resist pattern is formed such that the resist pattern covers a divot formed at a boundary portion of the element isolation portion with an SOI layer. Thus, since ions of the n-type impurity are not implanted into the divot, an etching rate of the divot in a cleaning process or the like is not accelerated, and etching can be suppressed. As a result, a BOX layer is prevented from becoming thin, so that degradation of a TDDB characteristic of the BOX layer can be prevented.

Abstract: A semiconductor device having improved reliability is disclosed. In a semiconductor device according to one embodiment, an element isolation region extending in an X direction has a crossing region that crosses, in plan view, a memory gate electrode extending in a Y direction that intersects with the X direction at right angles. In this case, in the crossing region, a width in the Y direction of one edge side, the one edge side being near to a source region, is larger than a width in the Y direction of the other edge side, the other edge side being near to a control gate electrode.

Abstract: It is an object of the present invention to provide a sealing mechanism that, while preventing a clearance that passes in an axial direction through an entire abutting surface without involving large resistance and that invites blow-by of a working fluid, can prevent adjacent seal segments from sticking to each other, and a method for manufacturing the sealing mechanism. A sealing device includes: an annular sealing ring that includes a plurality of seal segments annularly juxtaposed; a plurality of seal fins provided in an axial direction on an inner peripheral surface of the sealing ring; a joint surface on a circumferential end of the seal segment, the joint surface facing a joint surface on an adjacent seal segment; a groove that extends in a radial direction in the joint surface; and a protrusion formed by bending part of a surface that constitutes a long side of the groove toward an outside of the joint surface.

Abstract: An outdoor unit of an air conditioner coupled to an indoor unit by a liquid pipe and a gas pipe, includes: a compressor; an outdoor heat exchanger; a discharge pipe coupled to a refrigerant discharge side of the compressor; an intake pipe coupled to a refrigerant intake side of the compressor; an outdoor-unit high-pressure gas pipe coupled to the discharge pipe; an outdoor-unit low-pressure gas pipe coupled to the intake pipe; an outdoor-unit liquid pipe that couples a first refrigerant entry/exit opening of the outdoor heat exchanger and the liquid pipe together; a bypass pipe coupled to the outdoor-unit liquid pipe; a first flow-passage switcher coupled to a second refrigerant entry/exit opening of the outdoor heat exchanger, the discharge pipe, the intake pipe, and the bypass pipe; and a second flow-passage switcher coupled to the gas pipe, the outdoor-unit high-pressure gas pipe, and the outdoor-unit low-pressure gas pipe.

Abstract: A semiconductor device having improved reliability is disclosed. In a semiconductor device according to one embodiment, an element isolation region extending in an X direction has a crossing region that crosses, in plan view, a memory gate electrode extending in a Y direction that intersects with the X direction at right angles. In this case, in the crossing region, a width in the Y direction of one edge side, the one edge side being near to a source region, is larger than a width in the Y direction of the other edge side, the other edge side being near to a control gate electrode.

Abstract: An exhaust system for a steam turbine provided with an improved annular flow guide in a high or intermediate turbine. The improved flow guide reduces flow turbulence in an exhaust hood and reduces pressure loss to thereby improve turbine plant efficiency. The shape (vertically symmetric) of a flow guide 5A according to a conventional technology was modified into the shape (vertically asymmetric) of a flow guide 5 such that the length of a downstream flow guide portion 5d is greater than that of a upstream flow guide portion 5u. Numerical analyses were performed to find the optimum flow guide occupation ratio of the conventional technology and the corresponding total pressure loss coefficient. The obtained values were used as reference values. Further, the flow guide occupation ratio of the upstream flow guide portion 5u was set at 0.4 and the flow guide occupation ratio of the downstream flow guide portion 5d was set at 0.

Abstract: Steam turbine equipment is provided that can sharply adjust power generation output based on a variation in power demand while improving power generation efficiency during operation at a rated power generation output. The steam turbine equipment includes a steam control valve 4 disposed in a main steam pipe 2 leading from a boiler 1 to a steam turbine, an overload valve 6 disposed in an overload steam pipe 5 that bypasses the steam control valve 4 and leads from the main steam pipe 2 to a lower-pressure side of a steam turbine than a point where the main steam pipe 2 connects to the steam turbine, and a slit portion 31 through which the steam having flowed through the overload steam pipe 5 passes before flowing into a steam turbine stage portion. The slit portion 31 is configured such that its width C in an axial direction of a turbine rotor 15 is smaller than an inside diameter d of the overload steam pipe 5 (d>C).

Abstract: A combined cycle plant including a gas turbine, a heat recovery boiler for generating steam using exhaust heat of the gas turbine, and a steam turbine for feeding the steam generated by the heat recovery boiler from the heat recovery boiler through a steam system, characterized in that, the steam system is disposed so as to branch to a first steam system for introducing the steam to a first stage entrance of the steam turbine and a second steam system for introducing the steam to a stage entrance on a downstream side of the first stage of the steam turbine, and a flow rate of the steam fed to the steam turbine via the first steam system and the second steam system is adjusted on the basis of a steam flow rate generated by the heat recovery boiler.

Abstract: Disclosed is anti-alumina-buildup refractories for casting nozzles, which comprises a refractory aggregate including 20 mass % or more of CaO component, and 10 mass % or more of clinker particles each containing CaO as a mineral phase, on the basis of 100 mass % of the entire composition. At least a part of the surfaces of the CaO exposed from the surfaces of the corresponding clinker particles is formed with a CaCO3 film. The CaCO3 film releases CO2 gas through thermal decomposition to smooth an operative surface of the nozzle so as to prevent the accretion of metal thereon, so that CaO is continuously supplied to alumina attached on the operative surface to prevent alumina buildup. In addition, the CaCO3 film effectively prevents the hydration of CaO due to a hydration reaction.

Abstract: An exhaust system for a steam turbine provided with an improved annular flow guide in a high or intermediate turbine. The improved flow guide reduces flow turbulence in an exhaust hood and reduces pressure loss to thereby improve turbine plant efficiency. The shape (vertically symmetric) of a flow guide 5A according to a conventional technology was modified into the shape (vertically asymmetric) of a flow guide 5 such that the length of a downstream flow guide portion 5d is greater than that of a upstream flow guide portion 5u. Numerical analyses were performed to find the optimum flow guide occupation ratio of the conventional technology and the corresponding total pressure loss coefficient. The obtained values were used as reference values. Further, the flow guide occupation ratio of the upstream flow guide portion 5u was set at 0.4 and the flow guide occupation ratio of the downstream flow guide portion 5d was set at 0.

Abstract: Disclosed is anti-alumina-buildup refractories for casting nozzles, which comprises a refractory aggregate including 20 mass % or more of CaO component, and 10 mass % or more of clinker particles each containing CaO as a mineral phase, on the basis of 100 mass % of the entire composition. At least a part of the surfaces of the CaO exposed from the surfaces of the corresponding clinker particles is formed with a CaCO3 film. The CaCO3 film releases CO2 gas through thermal decomposition to smooth an operative surface of the nozzle so as to prevent the accretion of metal thereon, so that CaO is continuously supplied to alumina attached on the operative surface to prevent alumina buildup. In addition, the CaCO3 film effectively prevents the hydration of CaO due to a hydration reaction.

Abstract: A method of producing an immersion nozzle for continuous casting, which includes integrally molding a first zirconia-graphite compound applied to a powder-line portion of the nozzle, and a second compound applied to at least an inner hole portion of the nozzle. The second compound includes 10 mass % or more of clinker particles each containing CaO as a mineral phase, and the surface of at least a part of the clinker particles is subjected to an anti-hydration treatment, such as a heat treatment to be performed under a CO2 atmosphere to convert CaO to CaCO3. The method can suppress volume expansion caused by the reaction between CaO and water released from resin added as binder, so as to prevent the occurrence of cracks during a burning process of the molded piece.

Abstract: Disclosed is anti-alumina-buildup refractories for casting nozzles, which comprises a refractory aggregate including 20 mass % or more of CaO component, and 10 mass % or more of clinker particles each containing CaO as a mineral phase, on the basis of 100 mass % of the entire composition. At least a part of the surfaces of the CaO exposed from the surfaces of the corresponding clinker particles is formed with a CaCO3 film. The CaCO3 film releases CO2 gas through thermal decomposition to smooth an operative surface of the nozzle so as to prevent the accretion of metal thereon, so that CaO is continuously supplied to alumina attached on the operative surface to prevent alumina buildup. In addition, the CaCO3 film effectively prevents the hydration of CaO due to a hydration reaction.

Abstract: Disclosed is a method of continuous casting of aluminum-killed steel, using a refractory martial containing 20 mass % or more of CaO.MgO-based clinker. 60% or more of MgO grains included in the grains of the CaO.MgO-based clinker have a diameter of 50 ?m or less. The refractory martial is used at least at a portion to be in contact with molten steel. The present invention can reduce the diameter of MgO grains as inclusions in slabs to suppress the occurrence of flaws in a milled sheet metal.