Abstract: A method of manufacturing a ferroelectric film includes crystallizing a raw material having a complex oxide, the method including: performing a heat treatment in a first condition in which a predetermined pressure and a predetermined temperature are applied; and maintaining a second condition, in which a pressure and a temperature lower than the pressure and the temperature in the first condition are applied, after the heat treatment in the first condition, and the raw material is crystallized by repeating the heat treatment in the first condition and the maintaining the second condition.

Abstract: A ferroelectric material for forming a ferroelectric that is described by a general formula ABO3, includes an A-site compensation component which compensates for a vacancy of an A site, and a B-site compensation component which compensates for a vacancy of a B site.

Abstract: The present invention relates to a method of manufacturing an electrode which includes forming an electrode over a substrate. Initial crystal nuclei of an electrode material are formed over the substrate in an island pattern, and then grown layers of the electrode material are formed by causing the initial crystal nuclei to be grown. A substrate temperature when forming the initial crystal nuclei is higher than a substrate temperature when forming the grown layers.

Abstract: A method of manufacturing a ferroelectric capacitor. In this method, a lower electrode is formed on a base at first. A ferroelectric film which includes a PZTN complex oxide including lead, zirconium, titanium, and niobium on the lower electrode is formed, and then an upper electrode is formed on the ferroelectric film. A protective film is then formed to cover the lower electrode, the ferroelectric film, and the upper electrode, and heat treatment for crystallizing the PZTN complex oxide is performed at least after forming the protective film.

Abstract: A ferroelectric film is formed by an oxide that is described by a general formula AB1-xNbxO3. An A element includes at least Pb, and a B element includes at least one of Zr, Ti, V, W, Hf and Ta. The ferroelectric film includes Nb within the range of: 0.05≦x<1. The ferroelectric film can be used for any of ferroelectric memories of 1T1C, 2T2C and simple matrix types.

Abstract: The printer accepts the print request sent through the network and temporarily stores the image information to be printed in the image signal storage unit and the corresponding setting information into the setting information storage unit. The print request value calculation unit calculates the print request value on the basis of the setting information stored in the setting information storage unit. The printing operation boundary value is set through the manager interface and held in the printing operation boundary value holding unit. The print request value calculated by the print request value calculation unit is compared with the printing operation boundary value at the comparison unit. When the print request value exceeds the printing operation boundary value, the comparison unit delivers the print start signal to the image output unit to thereby continuously print image information corresponding to the print requests having been stored.

Abstract: A tab type male terminal intended for circuit board mounting comprising a body of terminal tab and mounting legs provided integrally with the terminal tab body to extend through respective terminal mounting holes in a circuit board to be soldered to an electrically conducting layer on the circuit board and having reinforcing projection means integrally provided with the terminal tab body between the adjacent mounting legs and inserted into a slot type common terminal mounting hole and soldered to the electrically conducting layer on the circuit board together with the mounting legs so as to more securely mount the tab type male terminal onto the circuit board.

Abstract: A connecting terminal for establishing electrical connection between a conduction path on a circuit board and an external electric circuit comprises first, second, and third legs integrally formed on a plate-shaped body. The first and second legs are arranged on either side of the body in the crosswise direction of the body, and the third leg is located halfway between the first and second legs. The three terminal legs of the connecting terminal are inserted individually in separate through holes in the circuit board and soldered, whereby the connecting terminal is connected electrically and mechanically to the circuit board. An external force applied to the connection terminal is received by the three legs and one of first and second supporting portions protruding individually from two opposite major surfaces of the connecting terminal body in first and second edge regions, which corresponds to the acting direction of the external force.

Abstract: A process for annealing a heat fused cast refractory product casts a molten refractory material in a mold which is held in a heat insulating material as an annealing medium, said mold being held in said packed heat insulating material which has a thermal conductivity ranging from 0.04 to 0.3 Kcal/m. hr. .degree.C. (at 200.degree. C.) as a heat insulating property and a contraction coefficient of up to 45% under a pressure of 50 Kg/cm.sup.2 as a mechanical strength for supporting a mold.