Abstract: A brake disk producing method, comprising a periphery pressing step for forming an outer peripheral shape (5) of a rotor plate (2) into a peripheral shape having recesses and ridges (5a, 5b) repeated in a radial direction, and a chamfering step for forming a chamfered surface (6) by pressing, against a corner portion (2d) on an outer peripheral edge of the rotor plate (2), a die (7), and a brake disk made by the method. Accordingly, it is possible to improve heat radiation capability, reduce the weight and moment of inertia, improve safety in handling, and suppress increase in production costs. Furthermore, by forming the chamfered surface (6), the amount of wear of a brake pad pressed by the brake disk (1) can be reduced, and durability of braking performance can be maintained or improved.

Abstract: This method of upgrading a biomass comprises: an upgrading step for performing upgrading treatment of a cellulose based biomass with an oxygen/carbon atomic ratio of at least 0.5, in presence of water and under a pressure of at least saturated water vapor pressure, and reducing said oxygen/carbon atomic ratio of said biomass to no more than 0.38, and a separation step for separating an upgraded reactant obtained from said upgrading step into a solid component and a liquid component.

Abstract: A brake disk producing method, comprising a periphery pressing step for forming an outer peripheral shape (5) of a rotor plate (2) into a peripheral shape having recesses and ridges (5a, 5b) repeated in a radial direction, and a chamfering step for forming a chamfered surface (6) by pressing, against a corner portion (2d) on an outer peripheral edge of the rotor plate (2), a die (7), and a brake disk made by the method. Accordingly, it is possible to improve heat radiation capability, reduce the weight and moment of inertia, improve safety in handling, and suppress increase in production costs. Furthermore, by forming the chamfered surface (6), the amount of wear of a brake pad pressed by the brake disk (1) can be reduced, and durability of braking performance can be maintained or improved.

Abstract: An object of the present invention is to continuously feed an object to be treated to a high-pressure reactor which treats the object to be treated containing 10 mass % or more of water under high pressure, while preventing backflow of a high-pressure atmosphere from the high-pressure reactor. This is embodied by making a configuration such that the object to be treated is fed to the high-pressure reactor connected to a discharge port of a screw feeder which is provided with a feed unit for the object to be treated and the discharge port on one end side and the other end side respectively and forms a high-pressure atmosphere pressurized to, for example, 2 MPa or higher, while air-tightness between the high-pressure atmosphere and the one end side of the screw feeder is maintained by a sealing action of an accumulation compressed on the other end side of the screw feeder.

Abstract: A method of correcting a mask pattern, the method correcting the mask pattern of a mask such that a wiring pattern having desired dimensions is formed based on a micro-fabrication process using the mask, corrects the mask pattern so that, before carrying out the micro-fabrication process, an etching proximity effect is dealt with by use of the correction model in which a pattern size and a inter-patter space size are set as parameters. This makes it possible to correct the mask pattern with high accuracy so that the wiring pattern having the desired dimensions is formed on the substrate, thereby dealing with the etching proximity effect.

Abstract: This method of upgrading a biomass comprises: an upgrading step for performing upgrading treatment of a cellulose based biomass with an oxygen/carbon atomic ratio of at least 0.5, in presence of water and under a pressure of at least saturated water vapor pressure, and reducing said oxygen/carbon atomic ratio of said biomass to no more than 0.38, and a separation step for separating an upgraded reactant obtained from said upgrading step into a solid component and a liquid component.

Abstract: A wiring structure including a wiring pattern formed in an insulation film on a substrate, a pattern for measurement which is formed in the insulation film on the substrate in a region different from a region where the wiring pattern is formed and is irradiated with measuring light, and a light transmission inhibiting film formed directly below the pattern for measurement, wherein the pattern for measurement is the same pattern as the wiring pattern, and the light transmission inhibiting film is made of a material having light transmissivity that is smaller than light transmissivity of a material of the insulation film forming the pattern for measurement.

Abstract: This method of upgrading a biomass comprises: an upgrading step for performing upgrading treatment of a cellulose based biomass with an oxygen/carbon atomic ratio of at least 0.5, in presence of water and under a pressure of at least saturated water vapor pressure, and reducing said oxygen/carbon atomic ratio of said biomass to no more than 0.38, and a separation step for separating an upgraded reactant obtained from said upgrading step into a solid component and a liquid component.

Abstract: In a manufacturing method for a semiconductor storage device, an interlayer insulating film, a first hard mask made of an insulative material for coating the interlayer insulating film and a second hard mask are formed on a substrate. The second hard mask is opened, and with use of the second hard mask as a mask, a recess groove, where an embedded interconnection is to be embedded, is formed in the interlayer insulating film. A diffusion preventing film is formed for preventing an embedded interconnection material from diffusing into the interlayer insulating film. The second hard mask and the diffusion preventing film are made of an identical material, which is a conductive material containing a metallic element in its composition. A conductive metal to be a material of the embedded interconnection is deposited. The surface side of the conductive metal is polished to the level that the first hard mask is exposed therefrom.

Abstract: In the process for reforming a biomass in accordance with the present invention, a mixture of a biomass and water as a raw material is compressed by a compressing pump 2 to be deposited into the inlet side of a circulating pump 43 in a primary reactor 41. The mixture is discharged from the circulating pump 43, conveyed to a heater 45, and then heated at a temperature ranging from 200 to 260° C., and sent to a reacting bath 47. In the reacting bath 47, hemicellulose contained in the biomass dissolves in hot water and subjected to a carbonizing reaction. The mixture derived from the primary reactor 41 is deposited in the inlet side of a circulating pump 44 of a secondary reactor 42, and sent to a heater 46, heated here at a temperature ranging from 270 to 330° C., and sent to the reacting bath 47. In the reacting bath 47, cellulose contained in the biomass dissolves in hot water, and is subjected to a carbonizing reaction.

Abstract: A brake disk producing method, comprising a periphery pressing step for forming an outer peripheral shape (5) of a rotor plate (2) into a peripheral shape having recesses and ridges (5a, 5b) repeated in a radial direction, and a chamfering step for forming a chamfered surface (6) by pressing, against a corner portion (2d) on an outer peripheral edge of the rotor plate (2), a die (7), and a brake disk made by the method. Accordingly, it is possible to improve heat radiation capability, reduce the weight and moment of inertia, improve safety in handling, and suppress increase in production costs. Furthermore, by forming the chamfered surface (6), the amount of wear of a brake pad pressed by the brake disk (1) can be reduced, and durability of braking performance can be maintained or improved.

Abstract: A semiconductor device is provided that comprises a substrate; an oxide layer over the substrate; and a silicon layer over the oxide layer, the silicon layer forming a notch-free gate structure; wherein the gate structure has been formed using a hard mask comprising an antireflective layer over a silicon oxide layer, the mask having been subsequently removed.

Abstract: This method of upgrading a biomass comprises: an upgrading step for performing upgrading treatment of a cellulose based biomass with an oxygen/carbon atomic ratio of at least 0.5, in presence of water and under a pressure of at least saturated water vapor pressure, and reducing said oxygen/carbon atomic ratio of said biomass to no more than 0.38, and a separation step for separating an upgraded reactant obtained from said upgrading step into a solid component and a liquid component.

Abstract: A transistor gate structure that is free from notches is formed by using a hard mask. The hard mask has a bilayer structure of a BARC (bottom antireflective coating) over a silicon dioxide layer. A photoresist layer is formed over a portion corresponding to the gates. A first etch forms the gate structure. Following removal of the photoresist, a second etch completely removes the BARC. The silicon dioxide layer can be removed by a subsequent wet etch with HF.

Abstract: An object of the present invention is to continuously feed an object to be treated to a high-pressure reactor which treats the object to be treated containing 10 mass % or more of water under high pressure, while preventing backflow of a high-pressure atmosphere from the high-pressure reactor. This is embodied by making a configuration such that the object to be treated is fed to the high-pressure reactor connected to a discharge port of a screw feeder which is provided with a feed unit for the object to be treated and the discharge port on one end side and the other end side respectively and forms a high-pressure atmosphere pressurized to, for example, 2 MPa or higher, while air-tightness between the high-pressure atmosphere and the one end side of the screw feeder is maintained by a sealing action of an accumulation compressed on the other end side of the screw feeder.

Abstract: In a manufacturing method for a semiconductor storage device, an interlayer insulating film, a first hard mask made of an insulative material for coating the interlayer insulating film and a second hard mask are formed on a substrate. The second hard mask is opened, and with use of the second hard mask as a mask, a recess groove, where an embedded interconnection is to be embedded, is formed in the interlayer insulating film. A diffusion preventing film is formed for preventing an embedded interconnection material from diffusing into the interlayer insulating film. The second hard mask and the diffusion preventing film are made of an identical material, which is a conductive material containing a metallic element in its composition. A conductive metal to be a material of the embedded interconnection is deposited. The surface side of the conductive metal is polished to the level that the first hard mask is exposed therefrom.

Abstract: This method of upgrading a biomass comprises: an upgrading step for performing upgrading treatment of a cellulose based biomass with an oxygen/carbon atomic ratio of at least 0.5, in presence of water and under a pressure of at least saturated water vapor pressure, and reducing said oxygen/carbon atomic ratio of said biomass to no more than 0.38, and a separation step for separating an upgraded reactant obtained from said upgrading step into a solid component and a liquid component.

Abstract: When a document is printed and this document contains plural sorts of data such as a document, a presentation material, and a drawing, a virtual document is formed by which these plural data can be printed in a batch mode in a document processing apparatus. A printing operation is carried out in accordance with a print control content of this virtual document. To this end, the document data having various formats and formed by using a plurality of application programs are converted into page document data to be outputted in a common format. This page document data is SPOOL-stored. Such a virtual document file is formed among these output page document data SPOOL-stored. A designation sequence and an output sequence are set to these virtual document files. As a result, the document data can be outputted in accordance with the designated output sequence, which is designated by the SPOOL-stored output page document data, by merely designating this virtual document file.

Abstract: A transistor gate structure that is free from notches is formed by using a hard mask. The hard mask has a bilayer structure of a BARC (bottom antireflective coating) over a silicon dioxide layer. A photoresist layer is formed over a portion corresponding to the gates. A first etch forms the gate structure. Following removal of the photoresist, a second etch completely removes the BARC. The silicon dioxide layer can be removed by a subsequent wet etch with HF.

Abstract: The present invention relates to a method for controlling carbon source concentration in the aerobic cultivation of a microorganism. The substrate carbon source remains at a low level in a cultivation vessel during the culture feeding in aerobic fed-batch, continuous or cell-recycling continuous cultures. This is accomplished by monitoring the increase in pH or dissolved oxygen content in the culture medium and adding the feed solution intermittently into a cultivation vessel at a calculated feed rate using a feed control device controlled by a computer.The present invention further relates to a process for producing L-lysine by fermentation having the advantages over the prior methods, those being improved productivity, higher concentrations of accumulated product, and increased yields of L-lysine.