Abstract: A semiconductor device, which is a diode, includes the following: an n cathode layer, which is an n-type region, disposed in a surface layer of a semiconductor substrate; a p cathode layer, which is a p-type region, disposed in the surface layer; and a cathode electrode, which is a metal electrode, in contact with both of the n cathode layer and the p cathode layer. The cathode electrode includes a first metal layer in contact with both of the n cathode layer and the p cathode layer, and a second metal layer disposed on the first metal layer. A contact surface between the first metal layer and the second metal layer has an oxygen concentration lower than the oxygen concentration of a contact surface between the first metal layer, and the n cathode layer and the p cathode layer.

Abstract: Provided are: a fine cellulose fiber that is superior in handling properties and that can suitably be used as a reinforcing material or the like for resin; a production method of the fine cellulose fiber; and a slurry and a composite comprising the fine cellulose fibers. The present invention pertains to fine cellulose fibers comprising a carbamate group. The degree of substitution with the carbamate group with respect to hydroxy groups in the fine cellulose fibers is preferably no less than 0.05 and no greater than 0.5. The present invention pertains to a slurry comprising the fine cellulose fibers, to a composite comprising the fine cellulose fibers and a resin, and to a production method of the fine cellulose fibers, comprising performing a heat treatment on a mixture of a plant raw material and urea or the like, and performing a miniaturization treatment of the plant raw material.

Abstract: A substrate processing method includes supplying RF power from an RF power supply provided with a linear amplifier to a plasma generation apparatus via an electronic matcher, thereby generating plasma and starting a process on a substrate, and stopping the supply of the RF power from the RF power supply when a prescribed time elapses after the generation of plasma starts.

Abstract: A substrate liquid processing apparatus includes a transfer section, a processing section, a reservoir and a liquid sending mechanism. The transfer section includes a transfer device configured to transfer a substrate. The processing section is provided adjacent to the transfer section in a horizontal direction, and includes a liquid processing unit configured to process the substrate by using a processing liquid. The reservoir is configured to store the processing liquid therein. The liquid sending mechanism is configured to send out the processing liquid stored in the reservoir into the liquid processing unit. The reservoir is disposed directly under the transfer section. Further, the liquid sending mechanism is disposed directly under the processing section. Space saving of the substrate liquid processing apparatus can be achieved.

Abstract: The substrate liquid processing apparatus includes a processing bath that accommodates substrates, and a plurality of gas supply pipes provided in a processing bath. Ejection holes of one gas supply pipe and ejection holes of another adjacent gas supply pipe do not overlap each other in a direction parallel to the circuit-formed surfaces of the substrates.

Abstract: A cancer test device (1) is provided with: an application unit (40) for applying a staining agent (45), which can selectively stain a product of a cancer-relating gene in a living cell a chromatic color, onto a group of living cells; an imaging unit (10) for imaging the group of living cells having the staining agent (45) applied thereto; and a determination unit (52) for determining the level of malignancy of cancerization of the group of living cells on the basis of the state of the stained expression pattern of the cancer-relating gene in the group of living cells in an image obtained by the aforementioned imaging.

Abstract: The present invention relates to an anticancer agent having a high safety and a superior anticancer activity, and anticancer agent containing, as an active ingredient, an aminoacetonitrile compound represented by the formula (I) wherein R1 is a hydrogen atom, an alkyl group and the like, R2, R3, and R4 are the same or different and each is a hydrogen atom, an alkyl group and the like, R5 and R6 are the same or different and each is a hydrogen atom, a halogen atom and the like, m is 0 or 1, R is a halogen atom, a cyano group, a nitro group, a phenyl group optionally substituted by an alkyl group and the like, an alkyl group and the like, Ar1 is a phenyl group, a naphthyl group, a pyridyl group, a pyrazolyl group, or the like, each of which is optionally substituted by a halogen atom, a cyano group, a nitro group, alkyl group and the like, and W is —O—, —S—, —SO2—, or —N(R7)— wherein R7 is a hydrogen atom, a (C1-C6)alkyl group and the like, or a pharmacologically acceptable salt thereof.

Abstract: A substrate processing method includes supplying RF power from an RF power supply provided with a linear amplifier to a plasma generation apparatus via an electronic matcher, thereby generating plasma and starting a process on a substrate, and stopping the supply of the RF power from the RF power supply when a prescribed time elapses after the generation of plasma starts.

Abstract: The present invention provides a method for determining the likelihood of colorectal cancer development in a human ulcerative colitis patient, the method including: a measurement step of measuring methylation rates of one or more CpG sites present in specific differentially methylated regions in DNA recovered from a biological sample collected from the human ulcerative colitis patient; and a determination step of determining the likelihood of colorectal cancer development in the human ulcerative colitis patient based on average methylation rates of the differentially methylated regions which are calculated based on the methylation rates measured in the measurement step and a preset reference value or a preset multivariate discrimination expression, in which the reference value is a value for identifying a cancerous ulcerative colitis patient and a non-cancerous ulcerative colitis patient, which is set for the methylation rate of each differentially methylated region, and the multivariate discrimination expres

Abstract: A semiconductor device, which is a diode, includes the following: an n cathode layer, which is an n-type region, disposed in a surface layer of a semiconductor substrate; a p cathode layer, which is a p-type region, disposed in the surface layer; and a cathode electrode, which is a metal electrode, in contact with both of the n cathode layer and the p cathode layer. The cathode electrode includes a first metal layer in contact with both of the n cathode layer and the p cathode layer, and a second metal layer disposed on the first metal layer. A contact surface between the first metal layer and the second metal layer has an oxygen concentration lower than the oxygen concentration of a contact surface between the first metal layer, and the n cathode layer and the p cathode layer.

Abstract: The present invention relates to an anticancer agent having a high safety and a superior anticancer activity, and an anticancer agent containing, as an active ingredient, an aminoacetonitrile compound represented by the formula (I) wherein R1 is a hydrogen atom, an alkyl group and the like, R2, R3, and R4 are the same or different and each is a hydrogen atom, an alkyl group and the like, R5 and R6 are the same or different and each is a hydrogen atom, a halogen atom and the like, m is 0 or 1, R is a halogen atom, a cyano group, a nitro group, a phenyl group optionally substituted by an alkyl group and the like, an alkyl group and the like, Ar1 is a phenyl group, a naphthyl group, a pyridyl group, a pyrazolyl group, or the like, each of which is optionally substituted by a halogen atom, a cyano group, a nitro group, alkyl group and the like, and W is —O—, —S—, —SO2—, or —N(R7)— wherein R7 is a hydrogen atom, a (C1-C6) alkyl group and the like, or a pharmacologically acceptable salt thereof.

Abstract: A substrate processing apparatus according to an embodiment includes a substrate processing tank, a processing liquid supply nozzle, and a pressure regulating plate. The processing liquid supply nozzle is provided in a lower portion within the substrate processing tank, and ejects the processing liquid from a plurality of ejection ports. The pressure regulating plate is provided between the processing liquid supply nozzle and the substrate in the substrate processing tank and has a plurality of holes through which the processing liquid flows. The pressure regulating plate is configured to adjust the inflow pressure of the processing liquid ejected from the processing liquid supply nozzle. In addition, the pressure regulating plate includes ribs that protrude from a processing liquid supply nozzle side surface thereof so as to partition the processing liquid supply nozzle side surface into a plurality of partitioned regions.

Abstract: A flow-rate regulator device for controlling a flow rate of a liquid includes a first flow-rate regulator component positioned on an upstream side of a liquid line, and a second flow-rate regulator component positioned on a downstream side of the liquid line and connected in series to the first flow-rate regulator component. The first flow-rate regulator component adjusts a degree of opening such that a flow rate of liquid flowing through the liquid line is set a specified number of times greater than a target flow rate when the second flow-rate regulator component has a full opening, and the second flow-rate regulator component adjusts a degree of opening such that the flow rate of the liquid flowing through the liquid line is to be at the target flow rate when the first flow-rate regulator component is adjusted to have the degree of opening.

Abstract: A substrate liquid processing apparatus includes a transfer section, a processing section, a reservoir and a liquid sending mechanism. The transfer section includes a transfer device configured to transfer a substrate. The processing section is provided adjacent to the transfer section in a horizontal direction, and includes a liquid processing unit configured to process the substrate by using a processing liquid. The reservoir is configured to store the processing liquid therein. The liquid sending mechanism is configured to send out the processing liquid stored in the reservoir into the liquid processing unit. The reservoir is disposed directly under the transfer section. Further, the liquid sending mechanism is disposed directly under the processing section. Space saving of the substrate liquid processing apparatus can be achieved.

Abstract: A grease discharge device includes a motor, a plunger, a grease supply unit, a pump, a check valve, and a relief valve. The plunger reciprocates by driving of the motor. The grease supply unit supplies grease to a forward movement side with respect to a backward movement side dead center of the plunger. The pump performs a discharge behavior of the grease by the reciprocation of the plunger. The check valve is disposed at a downstream side with respect to a forward movement side dead center of the plunger in a discharge path of the grease inside the pump. The relief valve is disposed between a supply portion of the grease by the grease supply unit and the check valve. The relief valve releases the grease inside the discharge path to the grease supply unit side according to a pressure rise inside the discharge path.

Abstract: It is an object of the present invention to provide a semiconductor device capable of adjusting a VF-EREC trade-off characteristic without a life-time control and a power conversion device having the semiconductor device. A semiconductor device according to the present invention includes a p?-type anode layer including a donor impurity and an acceptor impurity. An acceptor impurity concentration of the p-type anode layer is equal to or larger than a donor impurity concentration of the p?-type anode layer, an acceptor impurity concentration of the p?-type anode layer is equal to or larger than a donor impurity concentration of the p?-type anode layer, and a donor impurity concentration of the p?-type anode layer is equal to or larger than a donor impurity concentration of the n-type drift layer.