Abstract: This technology provides a method for fabricating an electronic device. A method for fabricating an electronic device including a variable resistance element, which includes a free layer having a variable magnetization direction; a pinned layer having a first non-variable magnetization direction, and including first ferromagnetic materials and a first spacer layer interposed between adjacent two first ferromagnetic materials among the first ferromagnetic materials; a tunnel barrier layer interposed between the free layer and the pinned layer; a magnetic correction layer having a second magnetization direction which is anti-parallel to the first magnetization direction; and a third spacer layer interposed between the magnetic correction layer and the pinned layer, and providing an anti-ferromagnetic exchange coupling between the magnetic correction layer and the pinned layer.

Abstract: Provided is an electronic device including a semiconductor memory. The semiconductor memory may include: an under layer including first and second metal layers and a barrier layer having a dual phase structure of different crystal structures and interposed between the first and second metal layers; a first magnetic layer positioned over the under layer and having a variable magnetization direction; a tunnel barrier layer positioned over the first magnetic layer; and a second magnetic layer positioned over the tunnel barrier layer and having a pinned magnetization direction, and the under layer may further include a barrier layer having a dual phase structure between the first and second metal layers.

Abstract: An electronic device may comprise a housing including two opposite open ends and at least a portion comprising a light-transmitting material, a bracket disposed inside the housing and having a shape corresponding to the housing, a flexible display device disposed between the housing and the bracket and configured to display information to an outside through the light-transmitting portion of the housing, and a plurality of covers closing the open ends of the housing and supporting two opposite ends of the bracket, wherein the bracket may include an inner space for mounting electronic parts, and the bracket is length-adjustable in at least one direction. The housing may be formed of a glass tube. Thus, the housing may be formed into a desired shape by processing the glass tube. A stretchable bracket structure may be implemented inside the housing to come in tight contact with the housing.

Abstract: An electronic device may include a semiconductor memory, and the semiconductor memory may include an MTJ (Magnetic Tunnel Junction) structure including a free layer having a variable magnetization direction, a pinned layer having a fixed magnetization direction, and a tunnel barrier layer interposed between the free layer and the pinned layer; an under layer disposed under the MTJ structure; and a perpendicular magnetic anisotropy increasing layer disposed below the under layer and including a material having a different crystal structure from the under layer.

Abstract: An electronic device is provided to include a semiconductor memory that includes: a substrate including a first region and a second region different from the first region; an interlayer dielectric layer formed over the substrate; a first conductive pattern located over the first region and formed in the interlayer dielectric layer, the first conductive pattern including a planarized top surface with a top surface of the interlayer dielectric layer; a second conductive pattern located over the second region and formed in the interlayer dielectric layer, the second conductive pattern including at least a portion recessed below a top surface of the interlayer dielectric layer; a variable resistance pattern formed over the interlayer dielectric layer the variable resistance pattern having a bottom surface coupled to the first conductive pattern and exhibiting different resistance values; and a capping layer pattern formed over the variable resistance pattern.

Abstract: According to one embodiment, there is provided a magnetoresistive element, including a first magnetic layer, a nonmagnetic layer on the first magnetic layer, and a second magnetic layer on the nonmagnetic layer, wherein one of the first and second magnetic layers include one of Co and Fe, and a material having a higher standard electrode potential than Co and Fe.

Abstract: The inventive concept relates to a cage inserted between vertebrae, and more particularly, to a cage inserted between vertebrae, which implements an articulated rotary motion and may be stably inserted between vertebrae. A cage inserted between vertebrae according to the inventive concept includes a cage body inserted between vertebrae, and a rotary member connected to the cage body to be rotatable and fastened to an inner rod of a cage inserting apparatus. The rotary member includes a connector connected to the cage body, and a screw thread extending from an end of the connector to protrude toward an outside of the cage body and screw-fastened to the inner rod.

Abstract: According to one embodiment, a magnetic memory device includes a magnetoresistive element, the magnetoresistive element including a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer. The first magnetic layer includes first and second sub-magnetic layers each containing at least iron (Fe) and boron (B), and a concentration of boron (B) contained in the first sub-magnetic layer is different from a concentration of boron (B) contained in the second sub-magnetic layer.

Abstract: A dust reduction apparatus which minimizes dust generation when coal is dropped and supplied from an upper dryer to a lower dryer in a multi-stage dryer for drying coal using reheat steam is provided.

Abstract: Provided are an energy storage system case and an energy storage system including the same. An energy storage system case includes: a body unit including a battery accommodating unit configured to accommodate a plurality of batteries, and a control module mounting unit on both sides of which control modules are configured to be mounted to control charge/discharge of a plurality of batteries; a casing cover coupled to the body unit; and a heat-dissipation unit located opposite the casing cover and coupled to the control module mounting unit to dissipate heat generated by a first control module among the control modules to an outside thereof.

Abstract: This technology provides an electronic device. An electronic device in accordance with an implementation of this document may include a semiconductor memory, and the semiconductor memory may include: an under layer including a plurality of material layers having a different crystal structures; a first magnetic layer formed over the under layer and having a variable magnetization direction; a tunnel barrier layer formed over the first magnetic layer; and a second magnetic layer formed over the tunnel barrier layer and having a pinned magnetization direction.

Abstract: A method for fabricating an electronic device including a semiconductor memory may include forming a buffer layer over a substrate, the buffer layer operable to aide in crystal growth of an under layer; forming the under layer over the buffer layer, the under layer operable to aide in crystal growth of a free layer; and forming a Magnetic Tunnel Junction (MTJ) structure including the free layer having a variable magnetization direction, a pinned layer having a pinned magnetization direction, and a tunnel barrier layer interposed between the free layer and the pinned layer over the under layer.

Abstract: An electronic device may include a semiconductor memory, and the semiconductor memory may include a free layer including a CoFeBAl alloy and having a variable magnetization direction; a pinned layer having a pinned magnetization direction; and a tunnel barrier layer interposed between the free layer and the pinned layer, wherein the CoFeBAl alloy may have an Al content less than 10 at %.

Abstract: This technology provides an electronic device. An electronic device in accordance with an implementation of this document may include a semiconductor memory for storing data, and the semiconductor memory may include a free layer having a variable magnetization direction; a pinned layer having a pinned magnetization direction; a tunnel barrier layer interposed between the free layer and the pinned layer; and an interface enhancement layer interposed between the tunnel barrier layer and the pinned layer, wherein the interface enhancement layer may include an Fe-rich first layer; a Co-rich second layer formed over the first layer; and a metal layer formed over the second layer.

Abstract: Methods and apparatuses are provided for operating a touch module of an electronic device. A communication related event is received at the electronic device. The touch module is switched from operation at a first operating frequency to operation at a second operating frequency, upon reception of the communication related event. The first operating frequency enables the touch module to receive a touch input. The second operating frequency enables the touch module to detect a specified event.

Abstract: An electronic device including a semiconductor memory is provided. The semiconductor memory may include an MTJ (Magnetic Tunnel Junction) structure including a free layer having a variable magnetization direction, a pinned layer having a fixed magnetization direction, and a tunnel barrier layer interposed between the free layer and the pinned layer; and an under layer formed under the MTJ structure, wherein the under layer may include metals and oxides of the metals.

Abstract: An electronic device may include a semiconductor memory, and the semiconductor memory may include a free layer having a variable magnetization direction; a pinned layer having a pinned magnetization direction; a tunnel barrier layer interposed between the free layer and the pinned layer; and an under layer which is in contact with the free layer and includes a rare earth metal nitride.

Abstract: The present invention relates to a hydrogen generating unit for producing hydrogen water, and more particularly, to a hydrogen generating unit which has a structure that is relatively small in volume and simple so as to be easily applied to a small capacity hydrogen water producing apparatus for home or business use, and particularly, in which when an upper electrode and a lower electrode are fastened, an upper cover and a lower cover, which have been used for the hydrogen generating unit in the related art devised by the applicant of the present invention, are not used, but instead, the upper electrode and the lower electrode may be positioned between a cap at the upper side and a housing at the lower side, and the upper electrode and the lower electrode may be assembled together when the cap and the housing are coupled to each other, thereby reducing the number of components used for the hydrogen generating unit, simplifying manufacturing processes, and achieving excellent assembly properties.

Abstract: An electronic device may comprise a housing including two opposite open ends and at least a portion comprising a light-transmitting material, a bracket disposed inside the housing and having a shape corresponding to the housing, a flexible display device disposed between the housing and the bracket and configured to display information to an outside through the light-transmitting portion of the housing, and a plurality of covers closing the open ends of the housing and supporting two opposite ends of the bracket, wherein the bracket may include an inner space for mounting electronic parts, and the bracket is length-adjustable in at least one direction. The housing may be formed of a glass tube. Thus, the housing may be formed into a desired shape by processing the glass tube. A stretchable bracket structure may be implemented inside the housing to come in tight contact with the housing.

Abstract: Methods and apparatuses are provided for operating a touch module of an electronic device. A communication related event is received at the electronic device. The touch module is switched from operation at a first operating frequency to operation at a second operating frequency, upon reception of the communication related event. The first operating frequency enables the touch module to receive a touch input. The second operating frequency enables the touch module to detect a specified event.