Abstract: Implementations of the disclosed technology provide an electronic device including a semiconductor memory, wherein the semiconductor memory includes: a magnetic tunnel junction (MTJ) structure including a free layer having a changeable magnetization direction, a pinned layer having a pinned magnetization direction, and a tunnel barrier layer sandwiched between the free layer and the pinned layer; and an under layer located under the MTJ structure, wherein the under layer includes a first under layer including a silicon-based alloy, and a second under layer located on the first under layer and including a metal.

Abstract: According to one embodiment, a magnetic memory includes a first magnetic layer, a second magnetic layer, a non-magnetic intermediate layer provided between the first magnetic layer and the second magnetic layer and an underlying layer provided on an opposite side of the first magnetic layer with respect to the intermediate layer, and the underlying layer contains AlN of a hcp structure.

Abstract: Provided is an electronic device including a semiconductor memory. The semiconductor memory may include: an under layer including first and second metal layers and a barrier layer having a dual phase structure of different crystal structures and interposed between the first and second metal layers; a first magnetic layer positioned over the under layer and having a variable magnetization direction; a tunnel barrier layer positioned over the first magnetic layer; and a second magnetic layer positioned over the tunnel barrier layer and having a pinned magnetization direction, and the under layer may further include a barrier layer having a dual phase structure between the first and second metal layers.

Abstract: Electronic devices and systems having semiconductor memory are provided. In one implementation, for example, an electronic device may include a substrate; an under layer disposed over the substrate and including conductive hafnium silicate; a free layer disposed over the under layer and having a variable magnetization direction; a tunnel barrier layer disposed over the free layer; and a pinned layer disposed over the tunnel barrier layer and having a pinned magnetization direction, and wherein the free layer includes: a first ferromagnetic material; a second ferromagnetic material having a coercive force smaller than that of the first ferromagnetic material; and an amorphous spacer interposed between the first ferromagnetic material and the second ferromagnetic material.

Abstract: Disclosed is a cage which is inserted between vertebral bodies of a cervical vertebra or spine during an operation for treating a cervical disc disease, myelosis, or fracture of the cervical vertebra or spine, and more particularly, to a cage with spikes, including upper and lower spikes which are attached to a clip inserted into a main body of the cage, unfolded upward and downward from the main body, and locked to vertebral bodies of a cervical vertebra or spine positioned at the top and bottom of the cage such that the cage is fixed and locked between the vertebral bodies.

Abstract: The present invention relates to an apparatus for producing hydrogen water, and more particularly, to a portable apparatus for producing hydrogen water including: a container held at an upper side to store water; a hydrogen generating unit positioned at a lower part of the container, and for dissolving hydrogen generated by electrolyzing water stored in the container in the water stored in the container, and converting the water in the container to hydrogen water; and a power supply unit for applying power to the hydrogen generating unit. The portable apparatus for producing hydrogen water of the present invention may enable a user to conveniently drink hydrogen water regardless of the time and the place.

Abstract: Disclosed is an electronic device including a housing with a first surface facing a first direction and a second surface facing a second, opposite direction. A glass cover may form at least a portion of the first surface. A display may be exposed through the glass cover. At least one protrusion is configured to absorb external impact to the electronic device. The protrusion protrudes from the first surface and is formed as part of the glass cover or protrudes through a hole in the glass cover.

Abstract: The present invention relates to a coal supply device for reducing dust of coal input for dry and supplying dispersing and supplying the coal in a system for drying coal using reheat steam, and more particularly, to a device to minimize dust when the coal is supplied to a multi-stage dryer from a coal constant feeder through a pulverizer in a multi-stage dryer for drying coal using reheat steam and disperse and supply the coal to a transfer device and a coal drying system in which coal which is primarily dried in the first coal dryer is inputted into the second coal dryer and thus is secondarily dried, includes a coal constant feeder supplying a predetermined amount of coal onto the upward surface of the first transfer plate; and a dust reducer constituted by an inlet pipe coupled to an outlet of the coal constant feeder by a bearing, a worm wheel coupled onto the outer periphery of the inlet pipe, a worm gear-coupled with the worm wheel and rotating with rotary force transferred from a motor, a curved pipe o

Abstract: The present invention relates to a system for reducing a volume by using a superheated vapor generated: from a superheated vapor generator, so as to carbonize and dry low-level radioactive wastes, the system comprising: a reheated vapor generator for generating the superheated vapor by heating mist sprayed from an atomizer, and then discharging the same to a vapor supply pipe; a drying furnace for carbonizing and drying the fed low-level radioactive wastes by primary vapor and the superheated vapor, which are supplied from the reheated vapor generator, and then cooling the carbonized and dried low-level radioactive wastes to a predetermined temperature; a heat exchanger for exchanging the heat of the vapor discharged from a vapor discharge pipe after the low-level radioactive wastes are carbonized and dried in the drying furnace, then supplying the heat-exchanged vapor to the reheated vapor generator through a vapor delivery pipe, discharging, to a condensate water delivery pipe, condensate water generated af

Abstract: Provided is an electronic device including a semiconductor memory. The semiconductor memory may include: an under layer including first and second metal layers and a barrier layer having a dual phase structure of different crystal structures and interposed between the first and second metal layers; a first magnetic layer positioned over the under layer and having a variable magnetization direction; a tunnel barrier layer positioned over the first magnetic layer; and a second magnetic layer positioned over the tunnel barrier layer and having a pinned magnetization direction, and the under layer may further include a barrier layer having a dual phase structure between the first and second metal layers.

Abstract: Electronic devices and systems having semiconductor memory are provided. In one implementation, for example, an electronic device may include a substrate; an under layer disposed over the substrate and including conductive hafnium silicate; a free layer disposed over the under layer and having a variable magnetization direction; a tunnel barrier layer disposed over the free layer; and a pinned layer disposed over the tunnel barrier layer and having a pinned magnetization direction, and wherein the free layer includes: a first ferromagnetic material; a second ferromagnetic material having a coercive force smaller than that of the first ferromagnetic material; and an amorphous spacer interposed between the first ferromagnetic material and the second ferromagnetic material.

Abstract: An electronic device may include a semiconductor memory. The semiconductor memory may include a variable resistance element including a ferromagnetic layer including a hydrogen group; an oxide spacer formed on sidewalls of the variable resistance element; and a nitride spacer formed on the oxide spacer.

Abstract: A display device includes: a first substrate including a first region, a third region spaced apart from and surrounding the first region, and a second region located between the first region and the third region; a second substrate opposite to the first substrate; a display element including a first electrode on the first substrate, a light emitting layer provided on the first electrode, and a second electrode provided on the light emitting layer; a touch sensing part disposed on the second substrate; and a sealing member provided on the third region of the first substrate, the sealing member joining the first substrate and the second substrate, wherein the second electrode overlaps with the touch sensing part when viewed on a plane, and an end of the second electrode is spaced apart from an end of the touch sensing part at a certain distance in the direction of the sealing member in the second region.

Abstract: This technology provides an electronic device. An electronic device in accordance with an implementation of this document may include a semiconductor memory for storing data, and the semiconductor memory may include a magnetic tunnel junction (MTJ) structure comprising a free layer having a variable magnetization direction, a pinned layer having a pinned magnetization direction, and a tunnel barrier layer interposed between the free layer and the pinned layer; and an under layer located under the MTJ structure, wherein the under layer may include: a first under layer including a silicon-based alloy; a second under layer including a metal; and a blocking layer interposed between the first under layer and the second under layer and including an amorphous material.

Abstract: An electronic device is provided to include a semiconductor memory that includes: a substrate including a first region and a second region different from the first region; an interlayer dielectric layer formed over the substrate; a first conductive pattern located over the first region and formed in the interlayer dielectric layer, the first conductive pattern including a planarized top surface with a top surface of the interlayer dielectric layer; a second conductive pattern located over the second region and formed in the interlayer dielectric layer, the second conductive pattern including at least a portion recessed below a top surface of the interlayer dielectric layer; a variable resistance pattern formed over the interlayer dielectric layer the variable resistance pattern having a bottom surface coupled to the first conductive pattern and exhibiting different resistance values; and a capping layer pattern formed over the variable resistance pattern.

Abstract: The present disclosure relates to a porous polishing pad including pores by carbon dioxide gas generated by a reaction between a prepolymer and a hydrophilic polymer, and a method of preparing the porous polishing pad.

Abstract: This technology provides an electronic device. An electronic device in accordance with an implementation of this document may include a semiconductor memory for storing data, and the semiconductor memory may include a free layer having a variable magnetization direction; a pinned layer having a pinned magnetization direction; a tunnel barrier layer interposed between the free layer and the pinned layer; and an interface enhancement layer interposed between the tunnel barrier layer and the pinned layer, wherein the interface enhancement layer may include an Fe-rich first layer; a Co-rich second layer formed over the first layer; and a metal layer formed over the second layer.

Abstract: This technology provides an electronic device. An electronic device in accordance with an implementation of this document may include a semiconductor memory, and the semiconductor memory may include: an under layer including a plurality of material layers having a different crystal structures; a first magnetic layer formed over the under layer and having a variable magnetization direction; a tunnel barrier layer formed over the first magnetic layer; and a second magnetic layer formed over the tunnel barrier layer and having a pinned magnetization direction.

Abstract: The present invention relates to an extract of a processed herbal medicinal plant and a composition for skin external application which contains the extract. More specifically, the composition for skin external application contains an extract of processed herbal medicinal plant, prepared through a method comprising the steps of: (a) processing an herbal medicinal plant by a process of boiling, steaming, roasting, baking or heating the medicinal plant or a combination of two or more of these processes; (b) obtaining an extract of the processed medicinal plant. The composition shows an improved antioxidant effect.

Abstract: The present invention relates to a cage which is inserted between vertebral bodies of a cervical vertebra or spine during an operation for treating a cervical disc disease, myelosis, or fracture of the cervical vertebra or spine, and more particularly, to a cage with spikes, including upper and lower spikes which are attached to a clip inserted into a main body of the cage, unfolded upward and downward from the main body, and locked to vertebral bodies of a cervical vertebra or spine positioned at the top and bottom of the cage such that the cage is fixed and locked between the vertebral bodies.