Abstract: Layers containing silicon and oxygen are formed by means of low pressure chemical vapor deposition. As a source for silicon and oxygen, tetraethylorthosilicate (TEOS) is used which is drawn into the low pressure area of the deposition apparatus in liquid form and evaporated there. If necessary, oxygen is introduced into the low pressure area. The reactants are directed into the reaction zone which has been heated to a predetermined temperature, and reacted there. The reaction product is deposited onto the substrates provided therein. If the deposited layer is to comprise still further elements, liquid substances containing such elements are mixed with the liquid TEOS prior to being drawn into the evaporating area, in a ratio adapted to the desired layer composition. Both with respect to layer thickness and composition the layers deposited are highly homogeneous.

Abstract: the dry thermal oxidation of silicon semiconductor material to produce an oxide layer, such as the gate oxide of a field effect transistor, is carried out by flowing oxygen over the surface of the semiconductor at an elevated temperature to form a layer of silicon oxide. The electrical properties of the layer are improved by adding chlorine to the oxygen in the form of between 0.2 and 5.0 mol % of carbon tetrachloride in order to introduce chlorine into the growing oxide layer.