Method for the thermal oxidation of silicon with added chlorine

Abstract

the dry thermal oxidation of silicon semiconductor material to produce an oxide layer, such as the gate oxide of a field effect transistor, is carried out by flowing oxygen over the surface of the semiconductor at an elevated temperature to form a layer of silicon oxide. The electrical properties of the layer are improved by adding chlorine to the oxygen in the form of between 0.2 and 5.0 mol % of carbon tetrachloride in order to introduce chlorine into the growing oxide layer.

Description