Abstract: The electronic device includes a carrier, a semiconductor substrate attached to the carrier, and a layer system disposed between the semiconductor substrate and the carrier. The layer system includes an electrical contact layer disposed on the semiconductor substrate. A functional layer is disposed on the electrical contact layer. An adhesion layer is disposed on the functional layer. A solder layer is disposed between the adhesion layer and the carrier.

Abstract: A method includes providing a semiconductor chip having a first main surface and a layer of solder material deposited on the first main surface, wherein the layer of solder material has a roughness of at least 1 ?m. The semiconductor chip is placed on a carrier with the first main surface of the semiconductor chip facing the carrier. The semiconductor chip is pressed on the carrier with a pressure of at least 1 Newton per mm2 of surface area of the first main surface and heat is applied to the solder material.

Abstract: A method for the planar joining of components of semiconductor devices involves coating the components with diffusion materials on their upper sides and rear sides, respectively. Subsequently, the components to be joined one on the other are introduced into a reducing atmosphere. The components are aligned and a compressive pressure is exerted on the aligned components. While heating up the components to be joined in the reducing atmosphere to a diffusion joining temperature, isothermal solidification takes place, the diffusion joining temperature lying below the melting temperature of the forming diffusion joint of the joined material.

Abstract: A semiconductor device has a circuit carrier with a number of internal contact areas is disclosed, which includes a first material with a first electrochemical potential, and a semiconductor chip with an active surface and a number of chip contact areas, which include a second material with a second electrochemical potential. Bonding wire connections are arranged between the chip contact areas and the internal contact areas of the leadframe and comprise a third material with a third electrochemical potential. The connecting points between the chip contact areas and the bonding wires and/or the connecting points between the internal contact areas and the bonding wires are coated with an anticorrosive layer.

Abstract: A method for the planar joining of components of semiconductor devices involves coating the components with diffusion materials on their upper sides and rear sides, respectively. Subsequently, the components to be joined one on the other are introduced into a reducing atmosphere. The components are aligned and a compressive pressure is exerted on the aligned components. While heating up the components to be joined in the reducing atmosphere to a diffusion joining temperature, isothermal solidification takes place, the diffusion joining temperature lying below the melting temperature of the forming diffusion joint of the joined material.

Abstract: A semiconductor device has a circuit carrier with a number of internal contact areas is disclosed, which includes a first material with a first electrochemical potential, and a semiconductor chip with an active surface and a number of chip contact areas, which include a second material with a second electrochemical potential. Bonding wire connections are arranged between the chip contact areas and the internal contact areas of the leadframe and comprise a third material with a third electrochemical potential. The connecting points between the chip contact areas and the bonding wires and/or the connecting points between the internal contact areas and the bonding wires are coated with an anticorrosive layer.