Patents by Inventor Kook-Tae KIM

Kook-Tae KIM has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200144316
    Abstract: An image sensor including a semiconductor substrate having a first surface and a second surface; and a pixel isolation film extending from the first surface of the semiconductor substrate into the semiconductor substrate and defining active pixels in the semiconductor substrate, wherein the pixel isolation film includes a buried conductive layer including polysilicon containing a fining element at a first concentration; and an insulating liner between the buried conductive layer and the semiconductor substrate, and wherein the fining element includes oxygen, carbon, or fluorine.
    Type: Application
    Filed: June 25, 2019
    Publication date: May 7, 2020
    Inventors: Kook-tae KIM, Jin-gyun KIM, Soo-jin HONG
  • Publication number: 20200127025
    Abstract: An image sensor includes a photoelectric converter in a pixel area of a substrate to generate photoelectrons in response to an incident light that is incident onto the pixel area, a signal generator on a first surface of the substrate in the pixel area to generate electric signals corresponding to image information of an object in accordance with the photoelectrons, and a pixel separation pattern penetrating through the substrate from the first surface of the substrate to a second surface of the substrate opposite to the first surface of the substrate, the pixel separation pattern including an insulation pattern having a refractive index smaller than that of the substrate and a metallic conductive pattern enclosed by the insulation pattern, and the pixel area being enclosed by the pixel separation pattern and isolated from a neighboring pixel area.
    Type: Application
    Filed: July 9, 2019
    Publication date: April 23, 2020
    Inventors: Ha-Jin LIM, Kook-Tae KIM, Jong-Min JEON, Jae-Sung HUR, Hye-Ri HONG
  • Publication number: 20200111821
    Abstract: Image sensors are provided. An image sensor includes a substrate including a plurality of pixel areas. The substrate has a first surface and a second surface that is opposite the first surface. The image sensor includes a deep pixel isolation region extending from the second surface of the substrate toward the first surface of the substrate and separating the plurality of pixel areas from each other. The image sensor includes an amorphous region adjacent a sidewall of the deep pixel isolation region. Moreover, the image sensor includes an electron suppression region between the amorphous region and the sidewall of the deep pixel isolation region.
    Type: Application
    Filed: May 1, 2019
    Publication date: April 9, 2020
    Inventors: Hyungi Hong, Kook Tae Kim, Jingyun Kim, Soojin Hong
  • Publication number: 20200020334
    Abstract: An electronic device of the present invention comprises: a housing; a touchscreen display; a microphone; at least one speaker; a button disposed on a portion of the housing or set to be displayed on the touchscreen display; a wireless communication circuit; a processor; and a memory. The electronic device is configured to store an application program including a user interface for receiving a text input. When the user interface is not displayed on the touchscreen display, the electronic device enables a user to receive a user input through the button, receives user speech through the microphone, and then provides data on the user speech to an external server including an automatic speech recognition system and an intelligence system. An instruction for performing a task generated by the intelligence system in response to the user speech is received from the server.
    Type: Application
    Filed: February 1, 2018
    Publication date: January 16, 2020
    Inventors: Sang-Ki KANG, Jang-Seok SEO, Kook-Tae CHOI, Hyun-Woo KANG, Jin-Yeol KIM, Chae-Hwan LI, Kyung-Tae KIM, Dong-Ho JANG, Min-Kyung HWANG
  • Publication number: 20190363737
    Abstract: A method of transmitting a broadcast signal includes encoding mobile data for FEC (Forward Error Correction); encoding signaling information for signaling the mobile data; allocating the encoded mobile data and signaling data into a transmission frame; and transmitting the broadcast signal including the transmission frame, wherein the transmission frame includes a service signaling table having service type information identifying a type of a service of the mobile data and hidden information indicating whether the service of the mobile data is hidden or not.
    Type: Application
    Filed: August 6, 2019
    Publication date: November 28, 2019
    Applicant: LG ELECTRONICS INC.
    Inventors: Chul Soo LEE, In Hwan CHOI, Ho Taek HONG, Kook Yeon KWAK, Hyoung Gon LEE, Jae Hyung SONG, Jin Pil KIM, Won Gyu SONG, Joon Hui LEE, Jin Woo KIM, Byoung Gill KIM, Jong Yeul Suh, Kyu Tae AHN
  • Patent number: 10411011
    Abstract: A dummy gate electrode layer and a dummy gate mask layer may be formed on a substrate. The dummy gate mask layer may be patterned to form a dummy gate mask so that a portion of the dummy gate electrode layer is exposed. Ions may be implanted into the exposed portion of the dummy gate electrode layer and a portion of the dummy gate electrode layer adjacent thereto by an angled ion implantation to form a growth blocking layer in the dummy gate electrode layer. The dummy gate electrode layer may be etched using the dummy gate mask as an etching mask to form a dummy gate electrode. A spacer may be formed on side surfaces of a dummy gate structure including the dummy gate electrode and the dummy gate mask. An SEG process may be performed to form an epitaxial layer.
    Type: Grant
    Filed: July 5, 2018
    Date of Patent: September 10, 2019
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kook-Tae Kim, Ho-Sung Son, Dong-Suk Shin, Hyun-Jun Sim, Ju-Ri Lee, Sung-Uk Jang
  • Publication number: 20190158122
    Abstract: A method of transmitting a broadcast signal includes encoding mobile data for FEC (Forward Error Correction); encoding signaling information for signaling the mobile data; allocating the encoded mobile data and signaling data into a transmission frame; and transmitting the broadcast signal including the transmission frame, wherein the transmission frame includes a service signaling table having service_type information identifying a type of a service of the mobile data and hidden information indicating whether the service of the mobile data is hidden or not.
    Type: Application
    Filed: January 4, 2019
    Publication date: May 23, 2019
    Applicant: LG ELECTRONICS INC.
    Inventors: Chul Soo LEE, In Hwan CHOI, Ho Taek HONG, Kook Yeon KWAK, Hyoung Gon LEE, Jae Hyung SONG, Jin Pil KIM, Won Gyu SONG, Joon Hui LEE, Jin Woo KIM, Byoung Gill KIM, Jong Yeul Suh, Kyu Tae AHN
  • Publication number: 20190055647
    Abstract: Disclosed are a substrate processing apparatus and a method of cleaning the apparatus. The apparatus includes a process chamber, a support unit in the process chamber and configured to support a substrate, and a gas injection unit in the process chamber. The gas injection unit includes a first injection portion configured to inject a source gas, a second injection portion facing the first injection portion and configured to inject a reaction gas that reacts with the source gas, and a third injection portion configured to inject a cleaning gas that removes a reactant produced from the source gas and the reaction gas.
    Type: Application
    Filed: August 17, 2018
    Publication date: February 21, 2019
    Inventors: Sukjin Chung, Bongjin Kuh, Kook Tae Kim, In-Sun Yi, Soojin Hong
  • Publication number: 20180331105
    Abstract: A dummy gate electrode layer and a dummy gate mask layer may be formed on a substrate. The dummy gate mask layer may be patterned to form a dummy gate mask so that a portion of the dummy gate electrode layer is exposed. Ions may be implanted into the exposed portion of the dummy gate electrode layer and a portion of the dummy gate electrode layer adjacent thereto by an angled ion implantation to form a growth blocking layer in the dummy gate electrode layer. The dummy gate electrode layer may be etched using the dummy gate mask as an etching mask to form a dummy gate electrode. A spacer may be formed on side surfaces of a dummy gate structure including the dummy gate electrode and the dummy gate mask. An SEG process may be performed to form an epitaxial layer.
    Type: Application
    Filed: July 5, 2018
    Publication date: November 15, 2018
    Inventors: KOOK-TAE KIM, HO-SUNG SON, DONG-SUK SHIN, HYUN-JUN SIM, JU-RI LEE, SUNG-UK JANG
  • Patent number: 10043806
    Abstract: A dummy gate electrode layer and a dummy gate mask layer may be formed on a substrate. The dummy gate mask layer may be patterned to form a dummy gate mask so that a portion of the dummy gate electrode layer is exposed. Ions may be implanted into the exposed portion of the dummy gate electrode layer and a portion of the dummy gate electrode layer adjacent thereto by an angled ion implantation to form a growth blocking layer in the dummy gate electrode layer. The dummy gate electrode layer may be etched using the dummy gate mask as an etching mask to form a dummy gate electrode. A spacer may be formed on side surfaces of a dummy gate structure including the dummy gate electrode and the dummy gate mask. An SEG process may be performed to form an epitaxial layer.
    Type: Grant
    Filed: September 26, 2016
    Date of Patent: August 7, 2018
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kook-Tae Kim, Ho-Sung Son, Dong-Suk Shin, Hyun-Jun Sim, Ju-Ri Lee, Sung-Uk Jang
  • Patent number: 9786785
    Abstract: Semiconductor device, method for fabricating the same and electronic devices including the semiconductor device are provided. The semiconductor device comprises an interlayer insulating layer formed on a substrate and including a trench, a gate electrode formed in the trench, a first gate spacer formed on a side wall of the gate electrode to have an L shape, a second gate spacer formed on the first gate spacer to have an L shape and having a dielectric constant lower than that of silicon nitride, and a third spacer formed on the second gate spacer.
    Type: Grant
    Filed: March 28, 2016
    Date of Patent: October 10, 2017
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Kook-Tae Kim, Young-Tak Kim, Ho-Sung Son, Seok-Jun Won, Ji-Hye Yi, Chul-Woong Lee
  • Publication number: 20170133379
    Abstract: A dummy gate electrode layer and a dummy gate mask layer may be formed on a substrate. The dummy gate mask layer may be patterned to form a dummy gate mask so that a portion of the dummy gate electrode layer is exposed. Ions may be implanted into the exposed portion of the dummy gate electrode layer and a portion of the dummy gate electrode layer adjacent thereto by an angled ion implantation to form a growth blocking layer in the dummy gate electrode layer. The dummy gate electrode layer may be etched using the dummy gate mask as an etching mask to form a dummy gate electrode. A spacer may be formed on side surfaces of a dummy gate structure including the dummy gate electrode and the dummy gate mask. An SEG process may be performed to form an epitaxial layer.
    Type: Application
    Filed: September 26, 2016
    Publication date: May 11, 2017
    Inventors: KOOK-TAE KIM, HO-SUNG SON, DONG-SUK SHIN, HYUN-JUN SIM, JU-RI LEE, SUNG-UK JANG
  • Publication number: 20160211378
    Abstract: Semiconductor device, method for fabricating the same and electronic devices including the semiconductor device are provided. The semiconductor device comprises an interlayer insulating layer formed on a substrate and including a trench, a gate electrode formed in the trench, a first gate spacer formed on a side wall of the gate electrode to have an L shape, a second gate spacer formed on the first gate spacer to have an L shape and having a dielectric constant lower than that of silicon nitride, and a third spacer formed on the second gate spacer.
    Type: Application
    Filed: March 28, 2016
    Publication date: July 21, 2016
    Inventors: Kook-Tae KIM, Young-Tak KIM, Ho-Sung SON, Seok-Jun WON, Ji-Hye YI, Chul-Woong LEE
  • Publication number: 20160141381
    Abstract: Semiconductor devices and methods for fabricating the same are provided. The semiconductor devices include a fin active pattern formed to project from a substrate, a gate electrode formed to cross the fin active pattern on the substrate, a gate spacer formed on a side wall of the gate electrode and having a low dielectric constant and an elevated source/drain formed on both sides of the gate electrode on the fin active pattern. The gate spacer includes first, second and third spacers that sequentially come in contact with each other in a direction in which the gate spacer goes out from the gate electrode, and a carbon concentration of the second spacer is lower than carbon concentrations of the first and third spacers.
    Type: Application
    Filed: August 3, 2015
    Publication date: May 19, 2016
    Inventors: Kook-Tae KIM, Ho-Sung Son, Geo-Myung Shin, Dong-Suk Shin, Si-Hyung Lee, Ji-Hye Yi, Sung-Hoon Jung, Yeong-Jong Jeong
  • Patent number: 9312376
    Abstract: Semiconductor device, method for fabricating the same and electronic devices including the semiconductor device are provided. The semiconductor device comprises an interlayer insulating layer formed on a substrate and including a trench, a gate electrode formed in the trench, a first gate spacer formed on a side wall of the gate electrode to have an L shape, a second gate spacer formed on the first gate spacer to have an L shape and having a dielectric constant lower than that of silicon nitride, and a third spacer formed on the second gate spacer.
    Type: Grant
    Filed: January 15, 2014
    Date of Patent: April 12, 2016
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Kook-Tae Kim, Young-Tak Kim, Ho-Sung Son, Seok-Jun Won, Ji-Hye Yi, Chul-Woong Lee
  • Publication number: 20140369115
    Abstract: Semiconductor device, method for fabricating the same and electronic devices including the semiconductor device are provided. The semiconductor device comprises an interlayer insulating layer formed on a substrate and including a trench, a gate electrode formed in the trench, a first gate spacer formed on a side wall of the gate electrode to have an L shape, a second gate spacer formed on the first gate spacer to have an L shape and having a dielectric constant lower than that of silicon nitride, and a third spacer formed on the second gate spacer.
    Type: Application
    Filed: January 15, 2014
    Publication date: December 18, 2014
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Kook-Tae KIM, Young-Tak KIM, Ho-Sung SON, Seok-Jun WON, Ji-Hye YI, Chul-Woong LEE