Abstract: An image sensor includes a substrate including a first surface, a second surface opposite to the first surface, and unit pixels, a deep device isolation portion disposed in the substrate to isolate the unit pixels from each other, and a transfer gate disposed on the first surface and in each of the unit pixels. The deep device isolation portion includes a first conductive pattern extending from the first surface toward the second surface, a first insulating pattern interposed between the first conductive pattern and the substrate, a second conductive pattern extending from the second surface toward the first conductive pattern, and a first fixed charge layer interposed between the second conductive pattern and the substrate.

Abstract: An image sensor includes a semiconductor substrate having a first surface and a second surface opposite to the first surface, a first pixel isolation structure disposed in a first trench which vertically extends from the first surface of the semiconductor substrate and defines a plurality of pixel regions, and a second pixel isolation structure disposed in a second trench vertically extending from the second surface of the semiconductor substrate. The second pixel isolation structure overlaps the first pixel isolation structure. The first pixel isolation structure includes a liner semiconductor pattern defining a gap region in the first trench, the liner semiconductor pattern including sidewall portions and a bottom portion connecting the sidewall portions, a liner insulating pattern disposed between the liner semiconductor pattern and the semiconductor substrate, and a capping insulating pattern disposed in the gap region of the liner semiconductor pattern.

Abstract: An image sensor including a substrate having first and second surfaces that are opposite to each other. The substrate includes unit pixel regions having photoelectric conversion regions. A semiconductor pattern is disposed in a first trench defined in the substrate and defines the unit pixel regions. The semiconductor pattern includes a first semiconductor pattern and a second semiconductor pattern disposed on the first semiconductor pattern. A back-side insulating layer covers the second surface of the substrate. The first semiconductor pattern includes a side portion extended along an inner side surface of the first trench and a bottom portion connected to the side portion and disposed closer to the second surface of the substrate than the side portion. The second semiconductor pattern extends toward the second surface of the substrate and is spaced apart from the back-side insulating layer with the bottom portion of the first semiconductor pattern interposed therebetween.

Abstract: An image sensor includes a substrate that includes a plurality of pixel areas, where the substrate includes a first surface and a second surface that are opposite to each other; and a device isolation pattern that extends from the first surface and into the substrate, where the device isolation pattern is between the plurality of pixel areas, where the device isolation pattern includes an intervening region, a crossing region, a first device isolation portion, and a second device isolation portion, where the intervening region includes: a first dielectric pattern; a conductive liner; and a second dielectric pattern, where the first dielectric pattern extends from the first device isolation portion and toward the second device isolation portion, and where the first device isolation portion includes the conductive liner and the second dielectric pattern.

Abstract: An image sensor includes a substrate that includes a first surface and a second surface that are opposite to each other, where the substrate includes a plurality of pixel areas; an isolation pattern that extends from the first surface and into the substrate, where the isolation pattern is between the plurality of pixel areas; and an antireflection layer on the isolation pattern, where the isolation pattern includes: a first device isolation pattern that contacts the antireflection layer; and a second device isolation pattern that is spaced apart from the antireflection layer, where the first device isolation pattern includes: a first dielectric layer; and a conductive reflection layer on the first dielectric layer, and where a top surface of the conductive reflection layer and a top surface of the first dielectric layer extend from the second surface of the substrate by a same distance.

Abstract: An image sensor includes a first chip; a second chip stacked on the first chip; and a bonding portion provided between the first chip and the second chip, wherein the first chip includes: a first semiconductor substrate including a first surface and a second surface opposing the first surface; a photoelectric conversion region in the first semiconductor substrate; and a first circuit interconnection layer provided on the first surface and adjacent to the photoelectric conversion region, wherein the second chip includes: a second semiconductor substrate including a third surface and a fourth surface facing the first surface and opposing the third surface; and a second circuit interconnection layer provided on the fourth surface, and wherein the bonding portion includes: a bonding layer provided between the first circuit interconnection layer and the second circuit interconnection layer and configured to connect the first chip and the second chip; and a diffusion barrier layer provided between the second circui

Abstract: Disclosed is an image sensor and a fabrication method. The image sensor comprises a substrate having a first surface and a second surface that are opposite to each other, an antireflection layer on the second surface of the substrate, and a pixel isolation part in the substrate and separating a plurality of pixels from each other. The pixels include first to fourth pixels. The pixel isolation part includes a first part between the first pixel and the third pixel and a second part between the first pixel and the second pixel. Each of the first part and the second part includes a semiconductor pattern that penetrates the substrate along a direction perpendicular to the first surface, a first isolation dielectric pattern between the substrate and the semiconductor pattern, and a capping pattern in the semiconductor pattern. The capping pattern is in contact with the antireflection layer.

Abstract: An image sensor including a semiconductor substrate having a first surface and a second surface; and a pixel isolation film extending from the first surface of the semiconductor substrate into the semiconductor substrate and defining active pixels in the semiconductor substrate, wherein the pixel isolation film includes a buried conductive layer including polysilicon containing a fining element at a first concentration; and an insulating liner between the buried conductive layer and the semiconductor substrate, and wherein the fining element includes oxygen, carbon, or fluorine.

Abstract: An image sensor including a semiconductor substrate having a first surface and a second surface; and a pixel isolation film extending from the first surface of the semiconductor substrate into the semiconductor substrate and defining active pixels in the semiconductor substrate, wherein the pixel isolation film includes a buried conductive layer including polysilicon containing a fining element at a first concentration; and an insulating liner between the buried conductive layer and the semiconductor substrate, and wherein the fining element includes oxygen, carbon, or fluorine.

Abstract: An image sensor includes a substrate including a plurality of pixel regions, a first surface, and a second surface that is opposite to the first surface, and a deep device isolation pattern penetrating the substrate and between the plurality of pixel regions, the deep device isolation pattern including a first filling pattern adjacent to the second surface, a second filling pattern on the first filling pattern and adjacent to the first surface, a semiconductor pattern between the first filling pattern and the substrate, an oxidized semiconductor pattern on the semiconductor pattern and between the substrate and the second filling pattern, and a side insulating pattern between the semiconductor pattern and the substrate, where the semiconductor pattern directly contacts the oxidized semiconductor pattern.

Abstract: An image sensor comprising a substrate including a plurality of unit pixels and including a first surface facing a first direction and a second surface facing a second direction opposite to the first direction, and a pixel isolation structure passing through the substrate in the second direction between the unit pixels, wherein the pixel isolation structure includes a buried conductive pattern extending from the second surface of the substrate into an inside of the substrate, and an insulating structure covering a lower surface of the buried conductive pattern and extending between the substrate and the buried conductive pattern, a first level and a second level that is under the first level being defined, the lower surface of the buried conductive pattern being positioned at the second level.

Abstract: An image sensor includes a substrate including a first surface and a second surface opposite to the first surface, and a pixel separation part in the substrate, the pixel separation part separating a plurality of pixels from each other, the plurality of pixels including first to fourth pixels in a clockwise direction, the pixel separation part including a first part between the first and second pixels, and a second part between the first pixel and the third pixel. Each of the first part and the second part includes a first dielectric pattern covering a lateral surface of the substrate, and a first silicon pattern covering a lateral surface of the first dielectric pattern. The second part further includes a second silicon pattern adjacent to a sidewall of the first silicon pattern. The second silicon pattern has a rhombic shape in a plan view.

Abstract: Image sensors are provided. An image sensor includes a substrate including a plurality of pixel areas. The substrate has a first surface and a second surface that is opposite the first surface. The image sensor includes a deep pixel isolation region extending from the second surface of the substrate toward the first surface of the substrate and separating the plurality of pixel areas from each other. The image sensor includes an amorphous region adjacent a sidewall of the deep pixel isolation region. Moreover, the image sensor includes an electron suppression region between the amorphous region and the sidewall of the deep pixel isolation region.

Abstract: An image sensor including a substrate having first and second surfaces that are opposite to each other. The substrate includes unit pixel regions having photoelectric conversion regions. A semiconductor pattern is disposed in a first trench defined in the substrate and defines the unit pixel regions. The semiconductor pattern includes a first semiconductor pattern and a second semiconductor pattern disposed on the first semiconductor pattern. A back-side insulating layer covers the second surface of the substrate. The first semiconductor pattern includes a side portion extended along an inner side surface of the first trench and a bottom portion connected to the side portion and disposed closer to the second surface of the substrate than the side portion. The second semiconductor pattern extends toward the second surface of the substrate and is spaced apart from the back-side insulating layer with the bottom portion of the first semiconductor pattern interposed therebetween.

Abstract: An image sensor may include a substrate having a first surface and a second surface, which are opposite to each other, and micro lenses on the second surface, interconnection lines on the first surface, and a pixel isolation portion in the substrate, the pixel isolation portion configured to isolate pixels from direct contact with each other. The pixel isolation portion may include an insulating isolation pattern and a conductive pattern, wherein the conductive pattern is spaced apart from the substrate, and the insulating isolation pattern is between the substrate and the conductive pattern. The conductive pattern may include a sequential arrangement of a first conductive pattern, a second conductive pattern, and a third conductive pattern on a side surface of the insulating isolation pattern.

Abstract: An image sensor comprises a substrate having first and second surfaces opposite to each other, a fixed charge layer in contact with the second surface, an interlayer dielectric layer covering the first surface, a device isolation part adjacent to the first surface in the substrate, and a pixel isolation part in the substrate. The pixel isolation part includes a conductive pattern, a buried dielectric pattern, and an isolation dielectric pattern that is simultaneously in contact with the fixed charge layer and the interlayer dielectric layer. The isolation dielectric layer has a first thickness at a level between the buried dielectric pattern and the conductive pattern. The isolation dielectric layer has a second thickness at a level of a bottom surface of the fixed charge layer. The second thickness is different from the first thickness.

Abstract: An image sensor including a substrate having first and second surfaces that are opposite to each other. The substrate includes unit pixel regions having photoelectric conversion regions. A semiconductor pattern is disposed in a first trench defined in the substrate and defines the unit pixel regions. The semiconductor pattern includes a first semiconductor pattern and a second semiconductor pattern disposed on the first semiconductor pattern. A back-side insulating layer covers the second surface of the substrate. The first semiconductor pattern includes a side portion extended along an inner side surface of the first trench and a bottom portion connected to the side portion and disposed closer to the second surface of the substrate than the side portion. The second semiconductor pattern extends toward the second surface of the substrate and is spaced apart from the back-side insulating layer with the bottom portion of the first semiconductor pattern interposed therebetween.

Abstract: An image sensor including a semiconductor substrate having a first surface and a second surface; and a pixel isolation film extending from the first surface of the semiconductor substrate into the semiconductor substrate and defining active pixels in the semiconductor substrate, wherein the pixel isolation film includes a buried conductive layer including polysilicon containing a fining element at a first concentration; and an insulating liner between the buried conductive layer and the semiconductor substrate, and wherein the fining element includes oxygen, carbon, or fluorine.

Abstract: An image sensor includes: a substrate including a first surface and a second surface; an interlayer dielectric layer covering the first surface; and a pixel separation part disposed its the substrate, wherein the pixel separation part divides a plurality of unit pixels from each other, wherein the pixel separation part includes: a conductive structure that extends from the first surface toward the second surface; a first reflective structure disposed between the conductive structure and the substrate; and a front-side buried pattern disposed between the conductive structure and the interlayer dielectric layer and between the first reflective structure and the interlayer dielectric layer, wherein the first reflective structure includes first reflective liners and second reflective liners that are alternately disposed in a direction toward the conductive structure from the substrate, wherein a refractive index of the first reflective liners is different from a refractive index of the second reflective liners.

Abstract: An image sensor includes: a substrate including a first surface and a second surface; an interlayer dielectric layer covering the first surface; and a pixel separation part disposed its the substrate, wherein the pixel separation part divides a. plurality of unit pixels from each other, wherein the pixel separation part includes: a conductive structure that extends from the first surface toward the second surface; a first reflective structure disposed between the conductive structure and the substrate; and a front-side buried pattern disposed between the conductive structure and the interlayer dielectric layer and between the first reflective structure and the interlayer dielectric layer, wherein the first reflective structure includes first reflective liners and second reflective liners that are alternately disposed in a direction toward the conductive structure from the substrate, wherein a refractive index of the first reflective liners is different from a refractive index of the second reflective liners.