Abstract: An optoelectronic device is disclosed, comprising: a photodiode array including a plurality of first photodiodes, each first photodiode including a respective n+ region and a respective n-well region; a guide array disposed over the photodiode array, the guide array including a plurality of guide members separated from one another by a layer of light-blocking material, the guide members being aligned with the n+ regions of the first photodiodes, such that each guide member is disposed over a different respective n+ region, and the layer of light-blocking material being aligned with the n-well regions of the first photodiodes; and a filter array disposed over the guide array, the filter array including a plurality of bandpass filters, each bandpass filter being aligned with a different one of the plurality of guide members, each bandpass filter having a different transmission band.

Abstract: Techniques for generating an indication of ambient light intensity are provided. The techniques include obtaining a set of one or more low light level measurements during a low light level display panel period of a display; obtaining a set of one or more high light level measurements during a high light level display panel period of the display; generating an ambient light level result based on analysis of the set of one or more low light level measurements, the set of one or more high light level measurements, and calibration information; and controlling brightness of the display based on the ambient light level result.

Abstract: Devices, methods, and systems for detecting proximity. A first light emitter emits light for a first time period while a light detector is not sensing. A second light emitter emits light for a second time period while the light detector is sensing. In some implementations, the first light emitter directly illuminates the light detector during the first time period, whereas the second light emitter is obstructed from directly illuminating the light detector during the second time period. In some implementations, the first light emitter is obstructed from illuminating a display during the first time period, and the second light emitter is obstructed from directly illuminating the light detector during the second time period. In some implementations, the first light emitter emits the light during the first time period such that the light detector maintains a linear responsivity during the second time period.

Abstract: Techniques for generating an indication of ambient light intensity are provided. The techniques include obtaining a set of one or more low light level measurements during a low light level display panel period of a display; obtaining a set of one or more high light level measurements during a high light level display panel period of the display; generating an ambient light level result based on analysis of the set of one or more low light level measurements, the set of one or more high light level measurements, and calibration information; and controlling brightness of the display based on the ambient light level result.

Abstract: Techniques for generating an indication of ambient light intensity are provided. The techniques include obtaining a set of one or more low light level measurements during a low light level display panel period of a display; obtaining a set of one or more high light level measurements during a high light level display panel period of the display; and generating an ambient light level result based on analysis of the set of one or more low light level measurements, the set of one or more high light level measurements, and calibration information.

Abstract: An optoelectronic device is disclosed, comprising: a photodiode array including a plurality of first photodiodes, each first photodiode including a respective n+ region and a respective n-well region; a guide array disposed over the photodiode array, the guide array including a plurality of guide members separated from one another by a layer of light-blocking material, the guide members being aligned with the n+ regions of the first photodiodes, such that each guide member is disposed over a different respective n+ region, and the layer of light-blocking material being aligned with the n-well regions of the first photodiodes; and a filter array disposed over the guide array, the filter array including a plurality of bandpass filters, each bandpass filter being aligned with a different one of the plurality of guide members, each bandpass filter having a different transmission band.

Abstract: An optoelectronic device is disclosed, comprising: a photodiode array including a plurality of first photodiodes, each first photodiode including a respective n+ region and a respective n-well region; a guide array disposed over the photodiode array, the guide array including a plurality of guide members separated from one another by a layer of light-blocking material, the guide members being aligned with the n+ regions of the first photodiodes, such that each guide member is disposed over a different respective n+ region, and the layer of light-blocking material being aligned with the n-well regions of the first photodiodes; and a filter array disposed over the guide array, the filter array including a plurality of bandpass filters, each bandpass filter being aligned with a different one of the plurality of guide members, each bandpass filter having a different transmission band.

Abstract: An optoelectronic device is disclosed, comprising: a photodiode array including a plurality of first photodiodes, each first photodiode including a respective n+ region and a respective n-well region; a guide array disposed over the photodiode array, the guide array including a plurality of guide members separated from one another by a layer of light-blocking material, the guide members being aligned with the n+ regions of the first photodiodes, such that each guide member is disposed over a different respective n+ region, and the layer of light-blocking material being aligned with the n-well regions of the first photodiodes; and a filter array disposed over the guide array, the filter array including a plurality of bandpass filters, each bandpass filter being aligned with a different one of the plurality of guide members, each bandpass filter having a different transmission band.

Abstract: An optical sensor system is disclosed. The optical sensor system comprises a panel and a sensing unit. The panel comprises a plurality of transparent areas. The sensing unit locates at one side of the panel and the sensing unit senses a plurality of first light signals reflected by an object and senses a plurality second light signals of an ambient light. The reflected first light signals and the second light signals pass through one of the plurality of transparent areas of the panel. The sensing unit further comprises a light sensor and a plurality of gesture sensors. The light sensor locates at the center of the sensing unit, and the light sensor senses the second light signals. The plurality of gesture sensors surrounds the light sensor, and the gesture sensors senses the reflected first light signals and then produce gesture signals corresponding to motions of the object.

Abstract: A selectable view angle optical sensor is disclosed. The selectable view angle optical sensor comprises a substrate, a photodiode array disposed on the substrate, a first optical shielding modulation layer disposed on a first plane and a second optical shielding modulation layer disposed on a second plane. The first plane is on the photodiode array, the second plane is on the first plane, and the first and second planes and a top surface of the photodiode array are substantially in parallel. The dimensions and configurations of the first and second optical shielding modulation layers limit a field of view of the photodiode array so that the photodiode array has selectable view angle function.

Abstract: An optical sensor system is disclosed. The optical sensor system comprises a panel and a sensing unit. The panel comprises a plurality of transparent areas. The sensing unit locates at one side of the panel and the sensing unit senses a plurality of first light signals reflected by an object and senses a plurality second light signals of an ambient light. The reflected first light signals and the second light signals pass through one of the plurality of transparent areas of the panel. The sensing unit further comprises a light sensor and a plurality of gesture sensors. The light sensor locates at the center of the sensing unit, and the light sensor senses the second light signals. The plurality of gesture sensors surrounds the light sensor, and the gesture sensors senses the reflected first light signals and then produce gesture signals corresponding to motions of the object.

Abstract: An infrared light detecting device and the infrared detecting method thereof. The device comprises a shield, a first photo detector and a second photo detector. The shield for blocking light is located above the first photo detector and the second photo detector. An opening is disposed on the shield above the first photo detector. In addition, there is a gap arranged between the first photo detector and the second photo detector. The first photo detector can detect the light passing through the opening to generate a photo sensing signal and couple an infrared light signal in the photo sensing signal to the second photo detector in order to output the infrared light signal.

Abstract: A photo-coupler device includes a P-type substrate, a P-type epitaxial layer, an insulation layer, a plurality of shielding layers, a metal layer and a passivation layer. The P-type epitaxial layer is deposited on the P-type substrate and includes two conducting regions and a plurality of N+ electrode regions between the two conducting regions. The insulation layer is deposited on the P-type epitaxial layer. The shielding layers comprising first shielding layers and second shielding layers are deposited in the insulation layer in parallel in a horizontal direction, and the first shielding layers are arranged for correspondingly covering the two conducting regions, the second shielding layers are arranged for correspondingly covering the at least one of the N+ electrode regions. The metal layer is made of Ag and is deposited on the insulation layer. The passivation layer is deposited on the metal layer.

Abstract: A photo-coupler device includes a P-type substrate, a P-type epitaxial layer, an insulation layer, a plurality of shielding layers, a metal layer and a passivation layer. The P-type epitaxial layer is deposited on the P-type substrate and including two conducting regions and a plurality of N+ electrode regions between the two conducting regions. The insulation layer is deposited on the P-type epitaxial layer. The shielding layers are deposited in the insulation layer in a transverse juxtaposition manner, and the portion of the shielding layers is arranged for correspondingly covering the two conducting regions, another portion of the shielding layers is arranged for correspondingly covering the part of the N+ electrode regions. The metal layer is made of Ag and is deposited on the insulation layer. The passivation layer is deposited on the metal layer.

Abstract: The present invention discloses a proximity sensing apparatus and a method thereof. The proximity sensing apparatus comprises a panel, a first light-emitting unit, a second light-emitting unit and a sensing unit. The panel comprises a plurality of transparent areas. The first light-emitting unit is located at one side of the panel and emits a plurality of first light signals through one of the transparent areas. The second light-emitting unit is located at the same side as the first light-emitting unit of the panel and emits a plurality of second light signals through one of the transparent areas. The sensing unit is located at the same side as the first light-emitting unit of the panel and senses the reflected first light signals or the reflected second light signals reflected by an object. Wherein, the sensing unit is closer to the first light-emitting unit than to the second light-emitting unit.

Abstract: An infrared light detecting device and the infrared detecting method thereof. The device comprises a shield, a first photo detector and a second photo detector. The shield for blocking light is located above the first photo detector and the second photo detector. An opening is disposed on the shield above the first photo detector. In addition, there is a gap arranged between the first photo detector and the second photo detector. The first photo detector can detect the light passing through the opening to generate a photo sensing signal and couple an infrared light signal in the photo sensing signal to the second photo detector in order to output the infrared light signal.

Abstract: An optical sensing device with multiple photodiode elements and multi-cavity Fabry-Perot ambient light filter structure to detect and convert light signal with different wavelength spectrum into electrical signal. In one embodiment, the optical sensing device capable of sensing color information of ambient light or sunlight and provides blocking of infrared (IR) light within the wavelength ranging from 700 nm to 1100 nm. Preferably, the optical sensing device senses not just the ambient light brightness but also the fundamental red, green and blue color components of the ambient light.

Abstract: The present invention discloses a multi-cavity optical sensing and thermopile infrared sensing system, which comprises an optical sensing part, a dielectric layer, a plurality of optical cavities, and a plurality of thermocouples. The dielectric layer covers on the top of the optical sensing part. The optical cavities are formed by a plurality of metal reflectors inside the dielectric layer. The thermocouples are laterally disposed near the bottom of the dielectric layer. In addition, a low temperature region is formed in an area which is the overlapping of vertical projections of such thermocouples and the optical sensing part; a high temperature region is formed by the overlapping of vertical projections of such thermocouples, but without the overlaying which belongs to the vertical projection of the optical sensing part. Therefore, the system can sense the ambient light brightness, color conditions and human blackbody infrared signals within the range of 8-12 micrometers wavelength.

Abstract: A proximity sensor, a control method thereof and an electronic apparatus equipped with the proximity sensor are disclosed. The proximity sensor connected to a light-emitting module includes a light source, a light receiver and a control module. The light source emits lights at predetermined time intervals. The light receiver receives reflected lights of the emitted lights that are reflected from an object. The control module determines whether an average value of intensity values of the reflected lights is larger than a threshold value. If yes, the control module further determines whether a difference between a highest and a lowest intensity value of the reflected lights falls in a preset range. If yes, the control module would control the light-emitting module to change to a different light mode thereof. When a user reacts to the different light mode, the system will be able to tell whether a real user is present.

Abstract: The present invention discloses a proximity sensing apparatus and a method thereof. The proximity sensing apparatus comprises a panel, a first light-emitting unit, a second light-emitting unit and a sensing unit. The panel comprises a plurality of transparent areas. The first light-emitting unit is located at one side of the panel and emits a plurality of first light signals through one of the transparent areas. The second light-emitting unit is located at the same side as the first light-emitting unit of the panel and emits a plurality of second light signals through one of the transparent areas. The sensing unit is located at the same side as the first light-emitting unit of the panel and senses the reflected first light signals or the reflected second light signals reflected by an object. Wherein, the sensing unit is closer to the first light-emitting unit than to the second light-emitting unit.