Abstract: A silicon carbide semiconductor device includes a silicon carbide layer, an element region including a semiconductor element portion formed in the silicon carbide layer, a JTE region (first electric field relaxing region), an insulating film disposed on a first main surface and covering the JTE region, and a pad electrode electrically connected to the JTE region. The pad electrode includes an extension portion extending from an end of the JTE region close to the element region in a peripheral direction from the element region toward the JTE region, the extension portion being disposed on the insulating film. The extension portion overlies at least a portion of the JTE region.

Abstract: A light scanning device includes a housing, a plurality of permeable members, a plurality of cleaning members, a plurality of cleaning holders, a linear member, and a driving unit. The plurality of permeable members close the respective plurality of the emission ports. The plurality of cleaning holders extend over the plurality of the permeable members adjacent to one another. The plurality of the cleaning holders each have a holding unit that holds at least the two cleaning members. The linear member is connected to the plurality of the cleaning holders. The driving unit causes the linear member to run circularly. The cleaning members each slide on the corresponding permeable member in association with the linear member running circularly. The cleaning holders each connected to the linear member at a center of the holding unit in an extending direction of the holding unit.

Abstract: An optical scanning device includes two cleaning holders. The two cleaning holders each include two cleaning members. The two cleaning holders are connected to a wire-shaped member. In accompaniment of circulation of the wire-shaped member, the two cleaning holders travel to cause the cleaning members to slide on corresponding transmissive members. Upon one of the two cleaning holders coming into contact with a first stopper at one end of its travel path, a circulating direction of the wire-shaped member is reversed. Upon the other of the two cleaning holders coming into contact with a second stopper at one end of its travel path, the wire-shaped member stops circulating.

Abstract: There is provided a silicon carbide semiconductor device allowing for suppression of breakage of an element upon short circuit of load. A MOSFET includes a silicon carbide layer, a gate insulating film, a gate electrode, a source electrode, and a drain electrode. The silicon carbide layer includes a drift region, a body region, and a source region. The MOSFET is configured such that a relational expression of n<?0.02RonA+0.7 is established in a case where a contact width of the source region and the source electrode is represented by n (?m) in a cross section in a thickness direction of the silicon carbide layer and a migration direction of carriers in the body region and where on resistance of the MOSFET in a state in which an inversion layer is formed in a channel region is represented by RonA (m?cm2).

Abstract: There is provided a silicon carbide semiconductor device having an improved switching characteristic. A MOSFET includes a silicon carbide layer, a gate insulating film, a gate electrode, and a source electrode. The silicon carbide layer includes a drift region, a body region, and a contact region. The source electrode is in contact with the contact region in a main surface. The MOSFET is configured such that contact resistance of the source electrode with respect to the contact region is not less than 1×10 ?4 ?cm2 and not more than 1×10?1 ?cm2. Moreover, when viewed in a plan view of the main surface, an area of the contact region is not less than 10% of an area of the body region.

Abstract: A trench has first to third side surfaces respectively constituted of first to third semiconductor layers. A first side wall portion included in a first insulating film has first to third regions respectively located on the first to third side surfaces. A second insulating film has a second side wall portion located on the first side wall portion. The second side wall portion has one end and the other end, the one end being connected to the second bottom portion of the second insulating film, the other end being located on one of the first and second regions, the other end being separated from the third region.

Abstract: A silicon carbide semiconductor device includes a silicon carbide layer, an element region including a semiconductor element portion formed in the silicon carbide layer, a JTE region (first electric field relaxing region), an insulating film disposed on a first main surface and covering the JTE region, and a pad electrode electrically connected to the JTE region. The pad electrode includes an extension portion extending from an end of the JTE region close to the element region in a peripheral direction from the element region toward the JTE region, the extension portion being disposed on the insulating film. The extension portion overlies at least a portion of the JTE region.

Abstract: An image forming apparatus includes an intermediate transfer belt, a cooling chamber to cool the intermediate transfer belt, a fixing section, a cooling fan, and a frame. The cooling chamber is defined immediately above the intermediate transfer belt. The fixing section is arranged on one side of the cooling chamber and configured to fix to a sheet the toner image transferred to the sheet by heating the toner image. The cooling fan is arranged on the other side of the cooling chamber and configured to introduce external air to the cooling chamber. The frame has an exhaust port for releasing air in the cooling chamber and is arranged on the other side of the cooling chamber.

Abstract: A silicon carbide semiconductor device includes a silicon carbide layer, an element region including a semiconductor element portion formed in the silicon carbide layer, a JTE region (first electric field relaxing region), an insulating film disposed on a first main surface and covering the JTE region, and a pad electrode electrically connected to the JTE region. The pad electrode includes an extension portion extending from an end of the JTE region close to the element region in a peripheral direction from the element region toward the JTE region, the extension portion being disposed on the insulating film. The extension portion overlies at least a portion of the JTE region.

Abstract: A method for manufacturing a silicon carbide semiconductor device includes the following steps. A silicon carbide substrate is prepared. A first heating step of heating the silicon carbide substrate in an atmosphere of oxygen is performed. A second heating step of heating the silicon carbide substrate to a temperature of 1300° C. or more and 1500° C. or less in an atmosphere of gas containing nitrogen atoms or phosphorus atoms is performed after the first heating step. A third heating step of heating the silicon carbide substrate in an atmosphere of a first inert gas is performed after the second heating step. Thus, the silicon carbide semiconductor device in which threshold voltage variation is small, and a method for manufacturing the same can be provided.

Abstract: A silicon carbide semiconductor device includes a silicon carbide layer, a body region, a source region, a gate insulating film, a gate electrode, a source electrode, a first impurity region, and a second impurity region. The second impurity region is disposed within the silicon carbide layer so as to connect the body region and the first impurity region to each other, and has a second conductivity type. An impurity concentration in the second impurity region is equal to or higher than an impurity concentration in the silicon carbide layer and equal to or lower than a lower limit of an impurity concentration in the body region.

Abstract: A silicon carbide semiconductor device includes a silicon carbide layer, a body region, a source region, a gate insulating film, a gate electrode, a source electrode, a first impurity region, and a second impurity region. The second impurity region is disposed within the silicon carbide layer so as to connect the body region and the first impurity region to each other, and has a second conductivity type. An impurity concentration in the second impurity region is equal to or higher than an impurity concentration in the silicon carbide layer and equal to or lower than a lower limit of an impurity concentration in the body region.

Abstract: An image forming apparatus includes a sheet conveyance passage, a photosensitive drum, a transfer unit, a fixing section, a conveyance unit, one or more detection sensors, an airflow generating section, a cooling airflow passage, and a shielding member. The conveyance unit is at an opposite side of the transfer unit from the photosensitive drum with a predetermined clearance from the transfer unit. Each detection sensor is disposed to face the transfer unit in cross section intersecting the axial direction of the photosensitive drum. The sheet detection sensor performs a predetermined detection. The airflow generating section causes a cooling airflow to flow between the transfer unit and the conveyance unit in the axial direction. The cooling airflow passage guides the cooling airflow toward each detection sensor. The shielding member blocks an airflow from a location around the transfer unit toward the cooling airflow passage in a direction intersecting the axial direction.

Abstract: A method for manufacturing a silicon carbide semiconductor device includes the following steps. A silicon carbide substrate is prepared. A first heating step of heating the silicon carbide substrate in an atmosphere of oxygen is performed. A second heating step of heating the silicon carbide substrate to a temperature of 1300° C. or more and 1500° C. or less in an atmosphere of gas containing nitrogen atoms or phosphorus atoms is performed after the first heating step. A third heating step of heating the silicon carbide substrate in an atmosphere of a first inert gas is performed after the second heating step. Thus, the silicon carbide semiconductor device in which threshold voltage variation is small, and a method for manufacturing the same can be provided.

Abstract: A semiconductor device includes at least one semiconductor chip, a first lead, and a second lead. The first lead includes a first portion connected to the semiconductor chip via a first wiring. The second lead includes a first portion connected to the semiconductor chip via a second wiring. The first portion of the first lead and the first portion of the second lead extend along a first direction. The first portion of the first lead is disposed so as to oppose the first portion of the second lead. The semiconductor chip is disposed between the first portion of the first lead and the first portion of the second lead.

Abstract: A rotating body support device includes a shaft, a bearing, a mounting member, and a protruding part. The shaft serves as a rotating shaft which rotates or a fixed shaft during rotation of a rotating body. The bearing includes an inner peripheral part for supporting the shaft and an outer peripheral part disposed at an interval in a radial direction relative to the inner peripheral part. The mounting member includes an insertion part on which the outer peripheral part is mounted, and supports the bearing. The protruding part is provided to protrude from one of a peripheral face of the shaft and the inner peripheral part of the bearing in the radial direction along a peripheral direction of the rotation. Moreover, the protruding part comes into contact, along the peripheral direction, with the other one of the peripheral face of the shaft and the inner peripheral part of the bearing.

Abstract: An image forming apparatus includes a sheet conveyance passage, a photosensitive drum, a transfer unit, a fixing section, a conveyance unit, one or more detection sensors, an airflow generating section, a cooling airflow passage, and a shielding member. The conveyance unit is at an opposite side of the transfer unit from the photosensitive drum with a predetermined clearance from the transfer unit. Each detection sensor is disposed to face the transfer unit in cross section intersecting the axial direction of the photosensitive drum. The sheet detection sensor performs a predetermined detection. The airflow generating section causes a cooling airflow to flow between the transfer unit and the conveyance unit in the axial direction. The cooling airflow passage guides the cooling airflow toward each detection sensor. The shielding member blocks an airflow from a location around the transfer unit toward the cooling airflow passage in a direction intersecting the axial direction.

Abstract: An image forming apparatus includes an intermediate transfer belt, a cooling chamber to cool the intermediate transfer belt, a fixing section, a cooling fan, and a frame. The cooling chamber is defined immediately above the intermediate transfer belt. The fixing section is arranged on one side of the cooling chamber and configured to fix to a sheet the toner image transferred to the sheet by heating the toner image. The cooling fan is arranged on the other side of the cooling chamber and configured to introduce external air to the cooling chamber. The frame has an exhaust port for releasing air in the cooling chamber and is arranged on the other side of the cooling chamber.

Abstract: A storage method and system where the storage system includes a plurality of servers and a control server configured to select a storage area available to be used by each of the servers from among storage areas of a group of storage devices sharable among the plurality of servers. The system includes, a detecting unit configured to detect an available capacity of a specified storage device other than the storage group, where the specified storage device is designated for use only by a specified server selected from among the servers, a specifying unit configured to specify an available area corresponding to the available capacity detected from the specified storage device through the detecting unit, and a setting unit configured to set the specified available area to a shared storage area that is available to be shared among the server.

Abstract: According to one embodiment, a playback apparatus includes a decoder, a resolution receiver, and an image quality enhancer. The decoder configured to decode encoded first moving image data to generate second moving image data. The resolution receiver configured to receive a resolution of a display device on which a video image based on the second moving image data is displayed. The image quality enhancer configured to perform image quality enhancement processing to the second moving image data according to the resolution of the display device.