Abstract: A toner set has a white toner and a color toner, in which in a case where Cw [mg/L] represents an amount of a cation on a surface of the white toner, measured by ion chromatography, and Cc [mg/L] represents an amount of a cation on a surface of the color toner, measured by ion chromatography, the toner set satisfies Conditions (1) and (2). 0.3 mg/L?Cc?1.2 mg/L??(1) (Cw/Cc)?0.

Abstract: An electrostatic image developing white toner includes white toner particles including a binder resin and a white coloring agent; and an external additive including poly(meth)acrylate particles, wherein the white toner particles have a volume-average particle size D50W of 6.0 ?m or more and 10 ?m or less, a ratio of the white toner particles having a particle size of 3.2 ?m or less relative to all the white toner particles is 0.5 vol % or more and 3 vol % or less, the white toner particles have a specific surface area Sw of 0.7 cm2/g or more and 1.2 cm2/g or less, and an external addition amount of the poly(meth)acrylate particles relative to the white toner particles is 0.1 mass % or more and 2.0 mass % or less.

Abstract: An electrostatic charge image developing toner set contains a white toner that contains white toner particles including a binder resin, a white colorant, and a release agent, and a non-white color toner that contains color toner particles including a binder resin, a color colorant, and a release agent, in which, in observation of cross sections of the white toner particles and the color toner particles, in a case where a proportion of an area of a domain of a release agent present in a surface layer region from a surface of the white toner particles to a depth of 1 ?m or less with respect to an area of all domains of the release agent present in a cross section of the white toner particles is represented by WW, and a case where a proportion of an area of a domain of a release agent present in a surface layer region from a surface of the color toner particles to a depth of 1 ?m or less with respect to an area of all domains of the release agent present in a cross section of the color toner particles is represe

Abstract: There is provided a technique that includes: (a) supplying a group 14 element-containing gas to a substrate; and (e) performing a cycle a predetermined number of times after (a). The cycle includes: (b) supplying a dopant gas containing a halide of a group 13 element or a group 15 element to the substrate; (c) supplying a first reducing gas to the substrate; and (d) supplying the group 14 element-containing gas to the substrate in this order.

Abstract: There is provided a technique that includes performing a cycle a predetermined number of times, the cycle including: (a) executing a process recipe of processing a substrate by supplying a process gas to an interior of a process container that accommodates the substrate in a state in which the interior of the process container is heated; and (b) executing a cleaning recipe of cleaning the interior of the process container by supplying a cleaning gas to the interior of the process container that does not accommodate the substrate in the state in which the interior of the process container is heated, wherein a time from an end of (b) in the cycle until a start of (a) in a next cycle is set to be equal to or less than a time from an end of (a) in the cycle until a start of (b) in the cycle.

Abstract: There is provided a technique that includes partially etching a film formed on a surface of a substrate by performing a cycle a predetermined number of times, the cycle including: (a) setting a temperature of the substrate having the first film formed on the surface to a first temperature; (b) stabilizing an in-plane temperature of the substrate at the first temperature; and (c) lowering the temperature of the substrate having the in-plane temperature stabilized at the first temperature from the first temperature to a second temperature that is lower than the first temperature, wherein in (c), an etching gas is supplied to the substrate for a predetermined period.

Abstract: Disclosed herein is a method for producing high-purity terephthalic acid, including steps of dissolving crude terephthalic acid crystal in water and performing catalytic hydrogenation treatment, depressurizing and cooling a reaction liquid after the catalytic hydrogenation treatment in stages with two or more stages of crystallization vessels, to crystallize terephthalic acid to obtain a terephthalic acid slurry, introducing the terephthalic acid slurry into an upper portion of a mother liquor replacement tower, bringing the terephthalic acid crystal into contact with an upward flow of replacement water introduced from a tower lower compartment of the mother liquor replacement tower while making the terephthalic acid crystal settled down in the tower, withdrawing the terephthalic acid crystal as slurry with the replacement water from the tower lower compartment, subjecting the slurry withdrawn from the tower lower compartment to solid-liquid separation into water and the terephthalic acid crystal, and drying

Abstract: There is provided a technique that includes partially etching a film formed on a surface of a substrate by performing a cycle a predetermined number of times, the cycle including: (a) setting a temperature of the substrate having the first film formed on the surface to a first temperature; (b) stabilizing an in-plane temperature of the substrate at the first temperature; and (c) lowering the temperature of the substrate having the in-plane temperature stabilized at the first temperature from the first temperature to a second temperature that is lower than the first temperature, wherein in (c), an etching gas is supplied to the substrate for a predetermined period.

Abstract: A method of terephthalic acid production in which slurry of crude terephthalic acid obtained through liquid-phase oxidation of a p-phenylene compound or a terephthalic acid slurry resulting from catalytic hydrogenation of the crude terephthalic acid is introduced into an upper part of a dispersion medium replacement tower while a second dispersion medium for replacement is introduced from a lower part of the dispersion medium replacement tower to perform dispersion medium replacement. The method is capable of enabling the dispersion medium replacement tower to continue stable operation while maintaining an extremely high efficiency of dispersion medium replacement.

Abstract: A method for producing high-purity terephthalic acid, comprising following steps (a) to (e): (a) a step of obtaining a crude terephthalic acid crystal by liquid-phase oxidizing a p-phenylene compound, (b) a step of dissolving the crude terephthalic acid crystal in water and then subjecting to catalytic hydrogenation treatment, (c) a step of depressurizing and cooling a reaction liquid after the catalytic hydrogenation treatment in stages with two or more stages of crystallization vessels, to crystallize terephthalic acid to obtain a terephthalic acid slurry, (d) a step of introducing the terephthalic acid slurry into an upper portion of a mother liquor replacement tower, bringing the terephthalic acid crystal into contact with an upward flow of replacement water introduced from a tower lower compartment of the mother liquor replacement tower while making the terephthalic acid crystal settled down in the tower, and withdrawing the terephthalic acid crystal as slurry with the replacement water from the tower

Abstract: A method of terephthalic acid production in which slurry of crude terephthalic acid obtained through liquid-phase oxidation of a p-phenylene compound or a terephthalic acid slurry resulting from catalytic hydrogenation of the crude terephthalic acid is introduced into an upper part of a dispersion medium replacement tower while a second dispersion medium for replacement is introduced from a lower part of the dispersion medium replacement tower to perform dispersion medium replacement. The method is capable of enabling the dispersion medium replacement tower to continue stable operation while maintaining an extremely high efficiency of dispersion medium replacement.

Abstract: A method for producing high-purity terephthalic acid, comprising following steps (a) to (c): the step (a); obtaining crude terephthalic acid crystal by liquid phase-oxidizing a p-phenylene compound; the step (b); obtaining a terephthalic acid crystal slurry by a catalytic hydrogenation treatment of the crude terephthalic acid crystal; and the step (c); introducing the terephthalic acid crystal slurry into an upper portion of a mother liquor replacement tower, and bringing the slurry into contact with an upward flow of replacement water introduced from a bottom portion of the mother liquor replacement tower while making the terephthalic acid crystal settled down in the tower, and extracting the terephthalic acid crystal as a slurry with the replacement water from the tower bottom portion, wherein (1) a stirring blade unit is disposed in a slurry layer in the bottom portion of the mother liquor replacement tower, and fluidity of the slurry layer is maintained by rotating the stirring blade unit in such a way

Abstract: A method for producing high-purity terephthalic acid, comprising following steps (a) to (c): the step (a); obtaining crude terephthalic acid crystal by liquid phase-oxidizing a p-phenylene compound; the step (b); obtaining a terephthalic acid crystal slurry by a catalytic hydrogenation treatment of the crude terephthalic acid crystal; and the step (c); introducing the terephthalic acid crystal slurry into an upper portion of a mother liquor replacement tower, and bringing the slurry into contact with an upward flow of replacement water introduced from a bottom portion of the mother liquor replacement tower while making the terephthalic acid crystal settled down in the tower, and extracting the terephthalic acid crystal as a slurry with the replacement water from the tower bottom portion, wherein (1) a stirring blade unit is disposed in a slurry layer in the bottom portion of the mother liquor replacement tower, and fluidity of the slurry layer is maintained by rotating the stirring blade unit in such a way

Abstract: A method of manufacturing a semiconductor device includes alternately performing supplying a first process gas containing silicon and a halogen element to a substrate having a surface on which monocrystalline silicon and an insulation film are exposed and supplying a second process gas containing silicon and not containing a halogen element to the substrate, and supplying a third process gas containing silicon to the substrate, whereby a first silicon film is homo-epitaxially grown on the monocrystalline silicon and a second silicon film differing in crystal structure from the first silicon film is grown on the insulation film.

Abstract: A method of manufacturing a semiconductor device includes alternately performing supplying a first process gas containing silicon and a halogen element to a substrate having a surface on which monocrystalline silicon and an insulation film are exposed and supplying a second process gas containing silicon and not containing a halogen element to the substrate, and supplying a third process gas containing silicon to the substrate, whereby a first silicon film is homo-epitaxially grown on the monocrystalline silicon and a second silicon film differing in crystal structure from the first silicon film is grown on the insulation film.

Abstract: A method of manufacturing a semiconductor device includes alternately performing supplying a first process gas containing silicon and a halogen element to a substrate having a surface on which monocrystalline silicon and an insulation film are exposed and supplying a second process gas containing silicon and not containing a halogen element to the substrate, and supplying a third process gas containing silicon to the substrate, whereby a first silicon film is homo-epitaxially grown on the monocrystalline silicon and a second silicon film differing in crystal structure from the first silicon film is grown on the insulation film.

Abstract: A method of manufacturing a semiconductor device includes alternately performing supplying a first process gas containing silicon and a halogen element to a substrate having a surface on which monocrystalline silicon and an insulation film are exposed and supplying a second process gas containing silicon and not containing a halogen element to the substrate, and supplying a third process gas containing silicon to the substrate, whereby a first silicon film is homo-epitaxially grown on the monocrystalline silicon and a second silicon film differing in crystal structure from the first silicon film is grown on the insulation film.

Abstract: A method of manufacturing a semiconductor device includes alternately performing supplying a first process gas containing silicon and a halogen element to a substrate having a surface on which monocrystalline silicon and an insulation film are exposed and supplying a second process gas containing silicon and not containing a halogen element to the substrate, and supplying a third process gas containing silicon to the substrate, whereby a first silicon film is homo-epitaxially grown on the monocrystalline silicon and a second silicon film differing in crystal structure from the first silicon film is grown on the insulation film.

Abstract: A method of manufacturing a semiconductor device includes alternately performing supplying a first process gas containing silicon and a halogen element to a substrate having a surface on which monocrystalline silicon and an insulation film are exposed and supplying a second process gas containing silicon and not containing a halogen element to the substrate, and supplying a third process gas containing silicon to the substrate, whereby a first silicon film is homo-epitaxially grown on the monocrystalline silicon and a second silicon film differing in crystal structure from the first silicon film is grown on the insulation film.

Abstract: A method of manufacturing a semiconductor device includes alternately performing supplying a first process gas containing silicon and a halogen element to a substrate having a surface on which monocrystalline silicon and an insulation film are exposed and supplying a second process gas containing silicon and not containing a halogen element to the substrate, and supplying a third process gas containing silicon to the substrate, whereby a first silicon film is homo-epitaxially grown on the monocrystalline silicon and a second silicon film differing in crystal structure from the first silicon film is grown on the insulation film.