Abstract: A method of manufacturing a semiconductor device includes alternately performing supplying a first process gas containing silicon and a halogen element to a substrate having a surface on which monocrystalline silicon and an insulation film are exposed and supplying a second process gas containing silicon and not containing a halogen element to the substrate, and supplying a third process gas containing silicon to the substrate, whereby a first silicon film is homo-epitaxially grown on the monocrystalline silicon and a second silicon film differing in crystal structure from the first silicon film is grown on the insulation film.

Abstract: A method of manufacturing a semiconductor device includes alternately performing supplying a first process gas containing silicon and a halogen element to a substrate having a surface on which monocrystalline silicon and an insulation film are exposed and supplying a second process gas containing silicon and not containing a halogen element to the substrate, and supplying a third process gas containing silicon to the substrate, whereby a first silicon film is homo-epitaxially grown on the monocrystalline silicon and a second silicon film differing in crystal structure from the first silicon film is grown on the insulation film.

Abstract: A signal generation circuit includes a limiter and a mixer. The limiter receives an input signal, allows the input signal to be off a scale at a limit voltage, and generates a phase signal indicating a phase component of the input signal. The mixer receives the input signal and the phase signal, and generates an amplitude signal indicating an amplitude component of the input signal.

Abstract: To provide a method of manufacturing a semiconductor device, including: forming a thin film different from a silicon oxide film on a substrate by supplying a processing gas into a processing vessel in which the substrate is housed; removing a deposit including the thin film adhered to an inside of the processing vessel by supplying a fluorine-containing gas into the processing vessel after executing forming the thin film prescribed number of times; and forming a silicon oxide film having a prescribed film thickness on the inside of the processing vessel by alternately supplying a silicon-containing gas, and an oxygen-containing gas and a hydrogen-containing gas into the heated processing vessel in which a pressure is set to be less than an atmospheric pressure after removing the deposit.

Abstract: A signal generation circuit includes a limiter and a mixer. The limiter receives an input signal, allows the input signal to be off a scale at a limit voltage, and generates a phase signal indicating a phase component of the input signal. The mixer receives the input signal and the phase signal, and generates an amplitude signal indicating an amplitude component of the input signal.

Abstract: A method of manufacturing a semiconductor device includes supplying a process gas into a process vessel accommodating a substrate to form a thin film on the substrate and supplying a cleaning gas into the process vessel to clean an inside of the process vessel, after the supplying the process gas to form the thin film is performed a predetermined number of times. When cleaning the inside of the process vessel, a fluorine-containing gas, an oxygen-containing gas and a hydrogen-containing gas are supplied as the cleaning gas into the process vessel heated and kept at a pressure less than an atmospheric pressure to remove a deposit including the thin film adhering to the inside of the process vessel through a thermochemical reaction.

Abstract: To provide a method of manufacturing a semiconductor device, including: forming a thin film different from a silicon oxide film on a substrate by supplying a processing gas into a processing vessel in which the substrate is housed; removing a deposit including the thin film adhered to an inside of the processing vessel by supplying a fluorine-containing gas into the processing vessel after executing forming the thin film prescribed number of times; and forming a silicon oxide film having a prescribed film thickness on the inside of the processing vessel by alternately supplying a silicon-containing gas, and an oxygen-containing gas and a hydrogen-containing gas into the heated processing vessel in which a pressure is set to be less than an atmospheric pressure after removing the deposit.

Abstract: A quadrature demodulation circuit includes: first to fourth mixers to receive a modulation signal; a phase shifter to supply to the first and third mixers a first local frequency signal, to supply to the second mixer a second local frequency signal having a designated phase difference relative to the first local frequency signal, and to supply to the fourth mixer a third local frequency signal that is an inverse in phase to the second local frequency signal; a first adder to add a signal output from the first mixer and a signal output from the second mixer and to output a first demodulation signal; and a second adder to add a signal output from the third mixer and a signal output from the fourth mixer and to output a second demodulation signal.

Abstract: A method of manufacturing a semiconductor device includes supplying a process gas into a process vessel accommodating a substrate to form a thin film on the substrate and supplying a cleaning gas into the process vessel to clean an inside of the process vessel, after the supplying the process gas to form the thin film is performed a predetermined number of times. When cleaning the inside of the process vessel, a fluorine-containing gas, an oxygen-containing gas and a hydrogen-containing gas are supplied as the cleaning gas into the process vessel heated and kept at a pressure less than an atmospheric pressure to remove a deposit including the thin film adhering to the inside of the process vessel through a thermochemical reaction.

Abstract: A communication apparatus which receives output voltage of a direct current voltage converter, the communication apparatus includes: a modulating/demodulating circuit which demodulates a reception signal from a high-frequency transmitting/receiving circuit, modulates a transmission signal, and outputs the transmission signal to the high-frequency transmitting/receiving circuit; a communication control circuit which inputs reception data and outputs transmission data to and from the modulating/demodulating circuit and performs communication control in accordance with an reception period and a transmission period; and a direct current voltage converter control circuit which switches a direct current voltage converter, which outputs an output voltage to the communication apparatus, to pulse width modulation control in the reception period and transmission period, and switches the direct current voltage converter to pulse frequency modulation control in at least a partial period excluding the reception period and

Abstract: A quadrature demodulation circuit includes: first to fourth mixers to receive a modulation signal; a phase shifter to supply to the first and third mixers a first local frequency signal, to supply to the second mixer a second local frequency signal having a designated phase difference relative to the first local frequency signal, and to supply to the fourth mixer a third local frequency signal that is an inverse in phase to the second local frequency signal; a first adder to add a signal output from the first mixer and a signal output from the second mixer and to output a first demodulation signal; and a second adder to add a signal output from the third mixer and a signal output from the fourth mixer and to output a second demodulation signal.

Abstract: The invention relates to a therapy of an infection with a drug resistant bacterium wherein a characteristic of multivalent phenol derivatives and/or extracts from “Tara” which enhance the activity of ?-lactam antibiotics on the drug resistant bacteria is utilized. Specifically, the invention relates to an enhancer of ?-lactam antibiotics comprising a multivalent phenol derivative or its pharmaceutically acceptable salt, a pharmaceutical composition comprising a ?-lactam antibiotic and a multivalent phenol derivative and/or extract from “Tara” for the therapy of an infection with a drug resistant bacterium, a disinfectant for the same, and a functional food comprising a multivalent phenol derivative and/or extract from “Tara”.

Abstract: Novel steroid saponin compounds (XR-1) and (XR-2) are extracted from Solanam aculeatissimum, a plant belonging to the Solanum genus, and 16-dehydropregnenolone is obtained by hydrolyzing the said compounds, subjecting the hydrolyzed product to Marker's degradation, and treating the obtained product with aqueous alkali.