Abstract: In a CCD image apparatus in which an image section is horizontally divided into two areas, two horizontal CCDs are related to the two image areas with one-to-one correspondence and transfer the signal electric charges of the two image areas, and the two horizontal CCDs are driven in an identical direction by the same horizontal-driving pulses.

Abstract: Crosstalk between the adjacent pixels can be prevented by a structure in which an overflow barrier is provided at the deep potion of a substrate. A partial P type region 150 is provided at the predetermined position of a lower layer region of the vertical transfer register 124 and a channel stop region 126. This P type region 150 is used to adjust potential in the lower layer region of the vertical transfer register 124 and the channel stop region 126 so that the potential may become smaller than that of the lower layer region of the photosensor 122 in a range from the minimum potential position of the vertical transfer register 124 to the overflow barrier 128. Accordingly, since the potential in the lower layer region of the vertical transfer register 124 and the channel stop region 126 at both sides of the lower layer region is low, electric charges photoelectrically-converted by the sensor region are blocked by this potential barrier and cannot be diffused easily.

Abstract: In a solid-state image pickup device, third transfer electrodes are disposed in parallel to vertical transfer registers, and second transfer electrodes are disposed vertically to the vertical transfer registers. These transfer electrodes are also formed on the read-out gate portions to supply a driving voltage for reading out signal charges from photoelectric conversion elements. On the basis of the driving voltage applied to both the third and second transfer electrodes, the read-out of the signal charges to the vertical transfer registers is carried out. At the portion where the read-out of the signal charges is carried out, the transfer electrode at the read-out gate portion side and the sensor area of the photoelectric conversion element are formed so as to be adjacent to each other. At the portion where no read-out of signal charges is carried out, an offset area is provided between the transfer electrode at the read-out gate portion side and the sensor area of the photoelectric conversion element.

Abstract: In a solid-state image pickup device, third transfer electrodes are disposed in parallel to vertical transfer registers, and second transfer electrodes are disposed vertically to the vertical transfer registers. These transfer electrodes are also formed on the read-out gate portions to supply a driving voltage for reading out signal charges from photoelectric conversion elements. On the basis of the driving voltage applied to both the third and second transfer electrodes, the read-out of the signal charges to the vertical transfer registers is carried out. At the portion where the read-out of the signal charges is carried out, the transfer electrode at the read-out gate portion side and the sensor area of the photoelectric conversion element are formed so as to be adjacent to each other. At the portion where no read-out of signal charges is carried out, an offset area is provided between the transfer electrode at the read-out gate portion side and the sensor area of the photoelectric conversion element.

Abstract: Disclosed is a method for fabricating a solid-state imaging device including a semiconductor substrate of a first conductivity type, a plurality of light-receiving sections provided at a distance in the surface region of the semiconductor substrate, and channel stop regions of a second conductivity type provided between the adjacent light-receiving sections in the surface region and in the internal region of the semiconductor substrate. The method includes the steps of forming a first photoresist layer having openings corresponding to positions at which the channel stop regions are formed; ion-implanting an impurity of a second conductivity type into the semiconductor substrate at a first energy through the first photoresist layer as a mask; forming a second photoresist layer having openings; and ion-implanting an impurity of a second conductivity type into the semiconductor substrate at a second energy through the second photoresist layer as a mask.

Abstract: An object of the present invention is to provide an information processing apparatus which is provided with a fingerprint verification function with a high security and a high operability. When a fingerprint is inputted from a fingerprint reading surface of a display/fingerprint reading unit, a fingerprint data sensing control unit reads fingerprint data and coordinate data, and stores the data into a storage unit. The fingerprint data is verified against fingerprint data previously registered and stored in a storage unit, to determine whether or not there is a matching fingerprint. In an information processing apparatus, a fingerprint verification function is thus implemented. Further, based on the coordinate data related to fingerprint input, the operation of the information processing apparatus is controlled.

Abstract: A solid-state image pickup device including a charge transferrer to transfer a signal charge obtained through photoelectric conversion; a floating diffusion region; a reset means for resetting the potential of the floating diffusion region; and a current source for supplying, to the floating diffusion region, a signal charge corresponding to the quantity of the signal charge transferred by the charge transferrer. The current source such as a current mirror circuit is interposed between the output stage of a horizontal CCD and the floating diffusion region so as to supply thereto a signal charge corresponding to the quantity of the signal charge transferred by the horizontal CCD, hence separating the horizontal CCD and the floating diffusion region potentially from each other, whereby the supply voltage, i.e., the reset voltage for the floating diffusion region, can be set independently of the potential of the horizontal CCD.

Abstract: A bidirectional remote control system composed of an electronic appliance and a remote control. The electronic appliance is provided with a display information storage section for storing therein display information for displaying buttons, icons or the like necessary to control the electronic appliance itself, and a transmitting section for transmitting display information stored in the display information storage section to the remote control.

Abstract: An interline transmission-format solid-state image-sensing device, which reads out all pixels, includes a two-dimensional array of a plurality of photosensitive units and a plurality of vertical CCD segments. Each vertical CCD segment is provided for one vertical line of the photosensitive units. A plurality of vertical transmission electrodes extends above each of these vertical transmission electrodes. At least one of these vertical transmission electrodes is arranged above the photosensitive units and is composed of a transparent film at least in regions above the photosensitive units.

Abstract: An ATM having a guide capability in which even a visually handicapped person who can not read braille type can positively operate a customer operating touch panel. An automatic teller machine includes a customer operating touch panel 2 having a plurality of operating keys which are touched for actuation. Guide icons 3 which are embossed to represent the icons of the operating keys are provided in the periphery of the customer operating touch panel at positions corresponding to said plurality of operating keys.

Abstract: An object of the invention is to provide a small-size image reading apparatus which has a high accuracy in image reading, by a different means from the prior arts. A panel includes a plurality of two-dimensionally arranged photoreceptor devices which are interposed between a pair of light-transmitting substrates. At an edge of one of the light-transmitting substrate, a slope is formed, and a light source is opposed to the slope. Light transmitted by reflection on the surfaces of the light-transmitting substrates is emitted on an object which comes in contact with the surface of the panel, and light returned from the object is received by the photoreceptor devices, whereby an image of the object is read. Thus, a direction in which light passes through the panel can be restricted, and the accuracy in image reading can be increased.

Abstract: Disclosed is a method for fabricating a solid-state imaging device including a semiconductor substrate of a first conductivity type, a plurality of light-receiving sections provided at a distance in the surface region of the semiconductor substrate, and channel stop regions of a second conductivity type provided between the adjacent light-receiving sections in the surface region and in the internal region of the semiconductor substrate. The method includes the steps of forming a first photoresist layer having openings corresponding to positions at which the channel stop regions are formed; ion-implanting an impurity of a second conductivity type into the semiconductor substrate at a first energy through the first photoresist layer as a mask; forming a second photoresist layer having openings; and ion-implanting an impurity of a second conductivity type into the semiconductor substrate at a second energy through the second photoresist layer as a mask.

Abstract: Disclosed herein is a photographing device that comprises a plurality of light-receiving elements (8a to 8h), a plurality of vertical transfer registers (7a, 7b), a first drive-voltage applying electrode (3a, 3b), and a second drive-voltage applying electrode (1 to 2c). The light-receiving elements (8a to 8h) are arranged in a horizontal direction and a vertical direction. The vertical transfer registers (7a, 7b) transfers the electric charges accumulated in the light-receiving elements in the vertical direction. The first drive-voltage applying electrode (3a, 3b) are arranged parallel to the vertical transfer registers, for applying a drive voltage to a specific one of the vertical transfer registers. The second drive-voltage applying electrode (1 to 2c) is arranged perpendicular to the vertical transfer registers, for applying a second drive voltage to the vertical transfer registers at the same time.

Abstract: In an electronic mail communication apparatus and in an electronic mail transmission method, to a signature entered through a data entry means 2 and stored in a RAM 7, information on the current location found by a current location finder and stored in the RAM 7, characters such as “in”, and a CR code are added. A text of electronic mail is transmitted with this signature appended thereto.

Abstract: A terminal apparatus is constituted by an added data input section, a writing start/completion detecting section, an input position detecting section, a connected terminal selecting section, a specific terminal information input section, an added data storing section, a specific terminal information storing section, a specific terminal judging section, a display section, a transmitting terminal identification information adding section, a transmitting terminal information storing section, a transmitting terminal judging section, a data transmitting section, a data receiving section, a memory section(not shown), and a section(not shown) for inputting and measuring date information. This arrangement allows an information processing apparatus, which sends and receives data to and from a plurality of information processing apparatuses via a communicating means and includes a common board for a plurality of information processings, to improve ability to recognize data.

Abstract: A terminal apparatus is constituted by an added data input section, a writing start/completion detecting section, an input position detecting section, a connected terminal selecting section, a specific terminal information input section, an added data storing section, a specific terminal information storing section, a specific terminal judging section, a display section, a transmitting terminal identification information adding section, a transmitting terminal information storing section, a transmitting terminal judging section, a data transmitting section, a data receiving section, a memory section (not shown), and a section (not shown) for inputting and measuring date information. This arrangement allows an information processing apparatus, which sends and receives data to and from a plurality of information processing apparatuses via a communicating means and includes a common board for a plurality of information processings, to improve ability to recognize data.

Abstract: In a solid-state image pickup device, third transfer electrodes are disposed in parallel to vertical transfer registers, and second transfer electrodes are disposed vertically to the vertical transfer registers. These transfer electrodes are also formed on the read-out gate portions to supply a driving voltage for reading out signal charges from photoelectric conversion elements. On the basis of the driving voltage applied to both the third and second transfer electrodes, the read-out of the signal charges to the vertical transfer registers is carried out. At the portion where the read-out of the signal charges is carried out, the transfer electrode at the read-out gate portion side and the sensor area of the photoelectric conversion element are formed so as to be adjacent to each other. At the portion where no read-out of signal charges is carried out, an offset area is provided between the transfer electrode at the read-out gate portion side and the sensor area of the photoelectric conversion element.

Abstract: In a CCD image apparatus in which an image section is horizontally divided into two areas, two horizontal CCDs are related to the two image areas with one-to-one correspondence and transfer the signal electric charges of the two image areas, and the two horizontal CCDs are driven in an identical direction by the same horizontal-driving pulses.

Abstract: To control the positional relation between semiconductor regions formed on an epitaxial layer after the epitaxial layer is formed with high accuracy in a method for manufacturing semiconductor devices in which a plurality of semiconductor regions are formed selectively on the epitaxial layer on the semiconductor surface having a semiconductor region formed selectively on the semiconductor surface, a first wafer alignment mark is formed on the semiconductor substrate surface to be served as the under layer of an epitaxial layer which will be formed subsequently, and the wafer alignment mark is used as an index for wafer alignment for forming selectively a semiconductor region, and a second wafer alignment mark is formed on the surface of the epitaxial layer after the epitaxial layer is formed, and the second wafer alignment mark is used as an index for wafer alignment for forming respective semiconductor regions on the epitaxial layer.

Abstract: A CCD solid state imaging device (21), which is comprised of an imaging section (24) formed of a plurality of light receiving portions (22), each serving as a pixel, and of a vertical transfer register (23) corresponding to each column of light receiving portions, first and second storage sections (26A) and (26B) capable of storing a charge from the imaging section (24), a horizontal transfer register (27) and a smear drain region (28), is employed, wherein after a first smear component charge (I) in the vertical transfer register (23) is swept away to the smear drain region , the vertical transfer register is operated at a high speed under such a state that a signal charge of the light receiving portion (22) is not read to the vertical transfer register (23) to store a second smear component charge (II) generated during the high speed transfer in the first storage section (26A), then the signal charge of the light receiving portion (22) is read to the vertical transfer register (23), the same is transferred