Abstract: A CCD solid state imaging device (21), which is comprised of an imaging section (24) formed of a plurality of light receiving portions (22), each serving as a pixel, and of a vertical transfer register (23) corresponding to each column of light receiving portions, first and second storage sections (26A) and (26B) capable of storing a charge from the imaging section (24), a horizontal transfer register (27) and a smear drain region (28), is employed, wherein after a first smear component charge (I) in the vertical transfer register (23) is swept away to the smear drain region , the vertical transfer register is operated at a high speed under such a state that a signal charge of the light receiving portion (22) is not read to the vertical transfer register (23) to store a second smear component charge (II) generated during the high speed transfer in the first storage section (26A), then the signal charge of the light receiving portion (22) is read to the vertical transfer register (23), the same is transferred

Abstract: A CCD solid state imaging device (21), which is comprised of an imaging section (24) formed of a plurality of light receiving portions (22), each serving as a pixel, and of a vertical transfer register (23) corresponding to each column of light receiving portions, first and second storage sections (26A) and (26B) capable of storing a charge from the imaging section (24), a horizontal transfer register (27) and a smear drain region (28), is employed, wherein after a first smear component charge (I) in the vertical transfer register (23) is swept away to the smear drain region , the vertical transfer register is operated at a high speed under such a state that a signal charge of the light receiving portion (22) is not read to the vertical transfer register (23) to store a second smear component charge (II) generated during the high speed transfer in the first storage section (26A), then the signal charge of the light receiving portion (22) is read to the vertical transfer register (23), the same is transferred

Abstract: An information processing device that can use two different functions for returning an initial screen and a preceding state by a simple method, a control method of the same device and a recording medium for recording a control program for the same device are provided.

Abstract: A method of manufacturing an ultrasonic probe includes the steps of forming electrodes on two surfaces of a piezoelectric single crystal made of a complex perovskite compound and then adhering the piezoelectric single crystal on a backing material, dicing the piezoelectric single crystal to form an arrayed piezoelectric single-crystal transducer, and poling the arrayed piezoelectric single-crystal transducer in the electric field of 0.5 to 2 kV/mm at a temperature of 80° C. or less.

Abstract: In a CCD solid-state imaging device, a wider dynamic range is available without producing fixed pattern noise. A solid-state imaging device is comprised of: an imaging portion for photoelectrically converting incident light to thereby produce a signal charge of a high sensitivity and a signal charge of a low sensitivity; a horizontal transfer register arranged adjacent to the imaging portion, for transferring the signal charges and having an output gate at a terminal portion thereof, which clips the signal charge of the high sensitivity; a charge detecting portion arranged adjacent to the output gate, for detecting the signal charge transferred from the horizontal transfer register; and a bias applying circuit for applying a bias voltage to the output gate so as to set a clip level for clipping the signal charge of the high sensitivity.

Abstract: An ultrasonic probe has strip-formed oscillators formed of a piezoelectric crystal material arranged in an array form. Metal layers are formed by a first layer of at least one of Ti, Ni and Cr, a second layer of at least one of Cu and Ni, and a third layer of at least one of Cu, Au, Pt, Ag and Pd. A backing material is fixed to the oscillators through the metal layers. With this structure, it is possible to manufacture an ultrasonic probe having a high sensitivity while maintaining a favorable dicing process, even while using a backing material having a low acoustic impedance and soft properties.

Abstract: A solid-state imaging apparatus in which the dynamic range can be increased and its magnification factor can be made variable without lowering the sensitivity. A plurality of photosensors are formed on the obverse surface of a semiconductor substrate. A vertical register and a read-out channel are disposed at one side of each of the photosensors. A read-out electrode of the read-out channel and a transfer electrode of the vertical register are formed of different conductive layers. A reading method used in the solid-state imaging apparatus is also included.

Abstract: A method of controlling an on-vehicle electric opening/closing body includes the steps of detecting an increased amount of driving current of a motor at a predetermined time interval, comparing the increased amount of the driving current, the number of times of continuous increases in driving current, or an accumulated value of the increased amount of the driving current with a predetermined threshold to perform decision of over load, and varying the threshold according to voltage applied to the motor, rotation directions of the motor, or a type of object generating the over load. It is thereby possible to surely detect the over load which is accidentally generated when sliding a sun-roof, a power window, or the like.

Abstract: An ultrasonic probe provided with an ultrasonic wave-transmitting/receiving element comprising a 1-3 type or 2-2 type composite piezoelectric body exposing a piezoelectric monocrystal from at least one of the faces of the composite piezoelectric body, and an electrode mounted on at least one of the faces of the composite piezoelectric body, wherein the composite piezoelectric body comprises a piezoelectric monocrystal whose electromechanical coupling coefficient ratio k.sub.33 /k.sub.t is 1.6 or more, and a resin whose acoustic impedance Zp is 4.times.10.sup.6 kg/m.sup.2 s or less.

Abstract: A CCD solid state imaging device can reduce a smear component. This CCD solid state imaging device comprises a plurality of photosensor sections (10) arranged in a matrix fashion, a vertical transfer register (5) having a transfer electrode (16) disposed at every column of the photosensor sections, a shunt line layer (33) connected to the transfer electrode (16) on the vertical transfer register (5), and a photo-shield layer (38) formed so as to surround the photosensor section 10 through an interlayer insulating layer (37) which covers the shunt layer (33), in which the interlayer insulating layer (37) is formed under an overhang portion (38a) of the photo-shield layer (38) to the photosensor section (10).

Abstract: A solid-state imaging device of a vertical overflow drain system according to the present invention includes a first conductive type semiconductor substrate, a second conductive type semiconductor well region formed on the first conductive type semiconductor substrate, and a first conductive type, second conductive type or intrinsic high-resistance semiconductor region formed on the second conductive semiconductor well region and having a lower concentration as compared with the second conductive semiconductor well region and a width enough for infrared ray to be sufficiently absorbed. A light receiving portion is formed on a surface of the first conductive type, second conductive type or intrinsic high-resistance semiconductor region.

Abstract: A CCD solid state imaging device can reduce a smear component. This CCD solid state imaging device comprises a plurality of photosensor sections (10) arranged in a matrix fashion, a vertical transfer register (5) having a transfer electrode (16) disposed at every column of the photosensor sections, a shunt line layer (33) connected to the transfer electrode (16) on the vertical transfer register (5), and a photo-shield layer (38) formed so as to surround the photosensor section 10 through an interlayer insulating layer (37) which covers the shunt layer (33), in which the interlayer insulating layer (37) is formed under an overhang portion (38a) of the photo-shield layer (38) to the photosensor section (10).

Abstract: An opening/closing control apparatus detects an overload placed on a movable member of a vehicle such as a sunroof and a power window while it is sliding. Further, it prevents overload detecting operation (reversing motion) from being made by a cause other than an overload. A control processor circuit compares a driving current value of a motor detected at predetermined intervals with a preset current value and corrects an overload threshold value to a threshold value of higher value when the driving current value detected when a first predetermined time period has passed after the start of the motor does not exceed the preset current value. Thereafter, the control processor circuit determines that an overload has occurred when a change in the driving current value has exceeded the overload threshold value.

Abstract: In a semiconductor device such as a CCD solid-state imager having terminals connected with protection transistors, a strength against a static electricity applied between a terminal and a ground (GND) and a strength against a static electricity applied between a terminal and a substrate and a strength against a static electricity between terminals can be improved.

Abstract: A CCD solid state imaging device can reduce a smear component. This CCD solid state imaging device comprises a plurality of photosensor sections (10) arranged in a matrix fashion, a vertical transfer register (5) having a transfer electrode (16) disposed at every column of the photosensor sections, a shunt line layer (33) connected to the transfer electrode (16) on the vertical transfer register (5), and a photo-shield layer (38) formed so as to surround the photosensor section 10 through an interlayer insulating layer (37) which covers the shunt layer (33), in which the interlayer insulating layer (37) is not formed under an overhang portion (38a) of the photo-shield layer (38) to the photosensor section (10).

Abstract: A passenger protecting apparatus has a parallel connection of two current paths; a dummy firing current path having a dummy load and a first switch connected in series, and a firing current path having a driving device and at least one impact-sensitive switch as a second switch connected in series. A third switch in series with the aforementioned parallel circuit is closed when the third switch receives a signal indicative of an impact from a signal processing circuit. The impact-sensitive switch, mounted on the vehicle body, is closed when an impact greater than a predetermined value is exerted to the vehicle. When the vehicle has an impact exerted thereto, a diagnostic circuit directs the signal indicative of the impact to the third switch, which closes to allow the firing current to flow through the firing current path. The firing current causes the driving device to activate the passenger-protecting element.

Abstract: A wire clamper for wire bonding apparatuses including a pair of clamping arms provided with clamping elements at the terminal ends of the clamping arms that are opened and closed by the electrostrictive strain effect or magnetstrictive strain effect of a piezoelectric element, and a temperature compensation component is connected to the piezoelectric element so as to correct the fluctuation in the clamping load in the clamping elements that are caused by temperature changes in the clamper.

Abstract: A solid state image sensing device comprising first and second horizontal shift registers of two-phase drive system, a smear drain region disposed in an opposing relation to a first storage section of the second horizontal shift register to which the first phase drive pulse of the second horizontal shift register is applied and a channel stop region disposed in an opposing relation to a second storage section of the second horizontal shift register to which the second phase drive pulse is applied, wherein a smear component is drained to the smear drain region, and a hole component is drained to the channel stop region for thereby reducing a dark current of the second horizontal shift register to about that of the first horizontal shift register. Therefore, a dark current in the horizontal shift register of the solid state image sensing device can be reduced.