Abstract: A composition for film formation which comprises:

Abstract: A composition for film formation which, when used in the production of semiconductor devices and the like, can give interlayer insulating films which differ little in dielectric constant even when obtained through curing under different conditions and have excellent adhesion to substrates, a process for producing the composition, and a silica-based film obtained from the composition. The composition for film formation comprises: (A) a product of hydrolysis and condensation obtained by hydrolyzing and condensing (A-1) at least one compound selected from the group consisting of compounds represented by the following formula (1), compounds represented by the following formula (2), and compounds represented by the following formula (3), and (A-2) at least one compound represented by the following formula (4), in the presence of a catalyst and water; and (B) an organic solvent.

Abstract: A composition for film formation which comprises: (A) a product of hydrolysis and condensation obtained by hydrolyzing and condensing at least one silane compound selected from the group consisting of compounds represented by the formula (1), compounds represented by the formula (2), and compounds represented by the formula (3) in the presence of water and at least one compound selected from the group consisting of tetraalkylammonium hydoxides, alicyclic organic amines, and metal hydroxides, and (B) an organic solvent.

Abstract: A composition for film formation which is capable of giving a silica-based coating film having an exceeding low dielectric constant and improved mechanical strength and useful as an interlayer insulating film in semiconductor devices and the like, a process for producing the composition, and a silica-based film obtained from the composition. The composition comprises (A) a product of hydrolysis and condensation obtained by hydrolyzing and condensing one or more silane compounds, and (B) an organic solvent.

Abstract: A composition for film formation which is capable of giving a silica-based coating film having an exceeding low dielectric constant and improved mechanical strength and useful as an interlayer insulating film in semiconductor devices and the like, a process for producing the composition, and a silica-based film obtained from the composition. The composition comprises (A) a product of hydrolysis and condensation obtained by hydrolyzing and condensing one or more silane compounds, and (B) an organic solvent.

Abstract: A composition for film formation which comprises:

Abstract: A composition for film formation which, when used in the production of semiconductor devices and the like, can give interlayer insulating films which differ little in dielectric constant even when obtained through curing under different conditions and have excellent adhesion to substrates, a process for producing the composition, and a silica-based film obtained from the composition.

Abstract: A semiconductor integrated circuit has a protective NMOS transistor having a drain and a source respectively electrically connected to a first interconnection (electrically connected to a base electrode of a bipolar transistor or a gate electrode of a MOS transistor) and ground and a gate electrode in a floating state, upon formation of the first interconnection. The first interconnection is formed by patterning using plasma etching and is connected to ground after the formation of the first interconnection.

Abstract: An emergency light includes a chemiluminescent light stick which can be easily operated to illuminate and taken out. When an operating lever is pushed, an engaging portion of a pivoting member pushes the bottom portion of the chemiluminescent light stick toward a wall surface. The chemiluminescent light stick has on the top end thereof a head secured to a holding hook of a holding member. The chemiluminescent light stick can be easily bent to illuminate by the lever principle with the protuberance of a case body serving as a fulcrum and the engaging portion serving as the point of action. When the operating lever is further pushed, the top end of the pivoting member protrudes frontward to open a top cover, and at the same time, the holding member which has been restricted by the pivoting member is released and it moves upward by the urging force of a flat spring and the pressing force applied by the head of the chemiluminescent light stick, thus enabling the chemiluminescent light stick to be removed.

Abstract: A semiconductor IC used for synthesizer having a phase locked loop PLL, a voltage controlled oscillator (VCO) and a mixer (MIX) for intermediate frequency is formed on a one chip silicon wafer. A semiconductor IC used for synthesizer having a VCO portion and an internal circuit such as PLL on a silicon wafer chip includes a differential buffer circuit which separates the VCO portion from the internal circuit. A capacitor (C1) is connected to an output of the VCO portion. A constant voltage source (V1) may be connected to respective input of the differential transistors (Q4, Q5). Transistors (Q6,Q7) provide emitter follower output circuits in the differential buffer. Respective emitters of the transistors (Q6,Q7) are connected to corresponding constant current sources (I1,I2).

Abstract: Steel hot-rolled to the desired diameter and allowed to travel forward is quenched with cooling water to a temperature below the bainite transformation temperature chosen from within the following range:145.multidot.t/r.sup.2 +130.ltoreq.T.ltoreq.152.multidot.t/r.sup.2 +240whereT=surface temperature of the rolled steel at a point 1 m to 2 m away form the point where quenching ends (.degree.C.)t=time required by the rolled steel for travelling from the quenching ending point to the temperature measuring point (hr)r=radius of the rolled steel (m).Then, the surface area of the rolled steel is subsequently automatically recovered by the heat of the core.

Abstract: A multi-frequency signal receiver for use in tone signalling circuits is disclosed. The receiver includes a plurality of channel band pass filters having mutually independent pass bands, each of which receives the input signal. Threshold detectors are connected to the outputs of the channel bandpass filters as is a variable threshold circuit. The variable threshold circuit includes a peak hold circuit and an attenuator for generating a threshold value for the detectors. A rectifier and integrator circuit rectifies an output which is weighted compared with the output of the peak hold circuit to produce a timing signal. The timing signal is used to gate the output of the detectors.