Abstract: A method of fabricating a three-dimensional microstructure provides data corresponding to information relating to the structure of a three-dimensional microstructure design. A sample is processed in accordance with the provided data by irradiating the sample with a charged-particle beam while controlling processing conditions of the charged-particle beam. Dimensions of the processed sample are compared with the provided data to identify differences between the structure of the processed sample and the structure of the three-dimensional microstructure design. The sample is then irradiated again with a charged-particle beam to correct the identified structural differences while adjusting the processing conditions of the charged-particle beam to thereby fabricate a three-dimensional microstructure having a structure substantially the same as the structure of the three-dimensional microstructure design.

Abstract: To include a focused ion beam apparatus fabricating a sliced specimen by processing a specimen as well as observing the sliced specimen, a scanning electron microscope observing the slice specimen, a gas-ion beam irradiation apparatus performing finishing processing by irradiating a gas-ion beam onto a surface of the sliced specimen, a specimen stage on which the sliced specimen is fixed and having at least one or more rotation axis, a specimen posture recognition means recognizing positional relation of the sliced specimen with respect to the specimen stage and a specimen stage control means controlling the specimen stage based on a specimen posture recognized by the posture recognition means and an installation angle of the gas-ion beam irradiation apparatus in order to allow an incident angle of the gas-ion beam with respect to the obverse or the reverse of the sliced specimen to be a desired value.

Abstract: A sample support of the present invention is prepared such that a silicon substrate is used as a raw material, the thickness structure having a shape and a thickness of 10 ?m or less is prepared using a semiconductor silicon process technique. The sample support of the present invention is adhered to a partially-cut mesh in a state that a sample portion is not adhered. Further, a plurality of portions where the samples are mounted is arranged on the same substrate.

Abstract: objects to be achieved by the invention are to provide a nanobio device in which cultured cells are organized at a high-level in a state near in vivo, and to provide a method of using the nanobio device of imitative anatomy structure. The nanobio device of imitative anatomy structure of the invention is obtained by manufacturing a substrate with a bio-compatible substance and arranging a plurality of types of cells thereon in a desired array. A method of manufacturing a nanobio device in the invention includes a step of manufacturing a substrate for a nanobio device by a micromachine processing technique and a step of arranging a plurality of cultured cells on the substrate in a desired array with laser optical tweezers.

Abstract: There is provided a liquid metal ion beam irradiation device for irradiating a specific portion of a sample 6 with a prescribed liquid metal ion beam 80 as to form a cross section, and a gaseous ion beam irradiation device 7 for scanning a prescribed region (observation region) of the cross section using a gaseous ion beam focused to a prescribed diameter and removing a damaged layer on the prescribed region.

Abstract: A micro-sample pick-up apparatus has a probe for picking up a micro sample, a probe holder for holding the probe, an XYZ driver mechanism for moving the probe holder in the three-dimensional directions of X, Y and Z, and an observation mechanism for observing the sample and the probe. A low-vibration rotary mechanism disposed in the probe holder for rotating the probe about an axis of the probe.

Abstract: A method of correcting a defective portion of an exposure window in a lithography mask, such as an EPL mask, includes a first step of irradiating a defective portion of the exposure window using a charge particle beam to perform correction processing, and a second step of irradiating another portion of the exposure window with the charged particle beam to eliminate attached matter therefrom, the attached matter consisting of particles ejected from the defective portion of the exposure window as a result of irradiation with the charged particle beam during the first step. The first step and the second step are sequentially repeated N times, wherein N is an integer of 2 or more, to thereby reduce the time needed for eliminating the attached matter.

Abstract: A thin specimen producing method acquires a work amount in a 1-line scan by an FIB under a predetermined condition, measures a remaining work width of a thin film on an upper surface of a specimen by a microscopic length-measuring function, determines a required number of scan lines of work to reach a predetermined width by calculation, and executes a work to obtain a set thickness. The work amount in a one-line scan by the FIB under the predetermined condition is determined by working the specimen in scans of plural lines, measuring the etched dimension by the microscopic length-measuring function, and calculating an average work amount per one-line scan.

Abstract: A probe mechanism and a sample pick up mechanism of the invention are provided at an observing apparatus or an analyzing apparatus and characterized in including a tip member comprising a needle-like member brought into contact with a sample, including a driving electrostatic actuator and means for monitoring a change in an electrostatic capacitance between electrodes of the electrostatic actuator, and capable of sensing that the probe is brought into contact with a sample by the monitor

Abstract: An apparatus has a holder member (21) which holds a sample (3), and a removing beam source (13) which irradiates an inert ion beam onto a cross section (4) of the sample (3) held by a holder member (21) and removes a fracture layer on the cross section (4). Then, the removing beam source (13) is disposed on the holding end side of the sample (3) with respect to the normal L of the cross section (4) so that the irradiating direction of the inert ion beam is tilted at the tilt angle ? to the normal L with respect to the cross section (4).

Abstract: A structure having arbitrary rotational symmetry is produced by attaching a sample stage (turntable) to a precision rotational shaft that is continuously rotated as high precision, performing FIB deposition inside an FIB chamber while causing continuous rotation of the sample stage, or performing cut-way processing from a side surface or upper surface, like a general purpose lathe, using FIB etching.

Abstract: In order to enable perpendicular processing of a slice in all directions about a lens optical axis, a focused charged particle beam of the present invention is provided with a tilt mechanism capable of tilting in two axial directions below a three dimensional X, Y, Z drive mechanism, as sample stage drive means. In this way, when carrying out correction processing of a clear defect of a penetrating structure in an electron beam exposure mask, it is possible to accurately carry out perpendicular processing of pattern surfaces in all directions.

Abstract: An ion beam processing device has a sample holder for fixing a sample on which a section has been formed by irradiation of a specified focused ion beam from a surface side, and gas ion beam irradiation device for irradiating a gas ion beam to a region of the sample fixing using the holder member that contains the section to remove a damage layer on the section. The gas ion beam from the gas ion beam irradiation device irradiates the section from a rear surface side of the sample at a specified incident angle.

Abstract: The invention is directed to a more positive pick up of a micro sample by means of a microscope system with manipulator. The microscope system with manipulator incorporates therein a low-vibration probe rotary mechanism, which is used for precisely correcting the rotational direction of the micro sample without applying vibrations thereto.

Abstract: A thin specimen producing method of the invention is to acquire a work amount in a 1-line scan by an FIB under a predetermined condition, also to measure a remaining work width of a thin film on an upper surface of a specimen by a microscopic length-measuring function, to determine a required number of scan lines of work to reach a predetermined width by calculation, and to execute a work to obtain a set thickness. The work amount in a one-line scan by a FIB under the predetermined condition is determined by working the specimen in scans of plural lines, measuring the etched dimension by the microscopic length-measuring function, and to calculate an average working amount per one-line scan.

Abstract: A tin coating is, for example, considered as a lead-free solder coating for a terminal attached to an electrochemical cell, but has presented a problem, as whiskers are likely to occur from the tin coating when the terminal is attached to the cell by laser welding. The formation of whiskers is due to the heat of laser welding and can be restrained by optimizing an undercoat layer of nickel or a nickel alloy.

Abstract: A system for surface or cross-sectional processing and observation and a method of surface or cross-sectional processing and observation using the system. The system has a unit for processing a sample surface to expose a target surface or cross section and a scanning probe microscope unit for observing the exposed surface or cross section. According to the system and method, a scanning probe microscope capable of providing different kinds of information is used to form at least one target surface or cross section in a sample surface and to observe the target surface or cross section. This offers the following advantages: a spatial resolution comparable to that of a transmission electron microscope can be achieved; and electric, magnetic, and mechanical information for a target sample plane, which couldn't be obtained by the known method, can be monitored in a shorter operating time.

Abstract: The invention provides a method of fabricating a three-dimensional microstructure close to the designed shape, using a focused charged-particle beam. This is achieved by reducing the effects of etching and deposition which vary according to various conditions when a processing work is performed. The invention also provides a system for implementing this method. The method starts with performing a provisional processing work based on data about the designed 3D shape of the 3D structure by controlling the processing conditions including the accelerating voltage of the charged particles, beam current, scan rate, dot-to-dot interval, and dot wait time. In this way, a prototypic structure is created. Then, the shape of this prototypic structure is compared with the designed shape. A non-provisional processing work is carried out while correcting the processing-conditions so as to correct the differences. CAD data is used as the data about the designed 3D shape of the 3D structure.

Abstract: When amounts of re-attached matter caused by a process are caused to be deposited on pattern wiring every time processing employing a charged particle beam is carried out on a window for exposure formed on an EPL mask, elimination of such deposits is time-consuming. There is therefore provided a correction step for performing correction processing on a part to be corrected of a window 400 using a charged particle beam and an elimination step for eliminating attached matter 310 formed as a result of splashed particles from the portion to be corrected becoming attached to a region different to the part to be corrected of the window 400 during correction using a charged particle beam, with a sequential cycle of this correction step and elimination step being repeated N times (where N is an integer of 2 or more).