Patents by Inventor Kouji Mitsuhashi

Kouji Mitsuhashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20080105203
    Abstract: A substrate processing apparatus that can prevent particles from being produced through chipping of a film. The film is formed on a surface of a component for the substrate processing apparatus by an anodic oxidization process in which the component is connected to the anode of a direct-current power source and immersed in a solution consisting mainly of an organic acid. The film is subjected to a semi-sealing process using boiling water.
    Type: Application
    Filed: September 27, 2007
    Publication date: May 8, 2008
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Kouji Mitsuhashi, Tomoya Okubo
  • Patent number: 7364798
    Abstract: It is to propose an internal member for a plasma treating vessel having excellent resistances to chemical corrosion and plasma erosion under an environment containing a halogen gas and an advantageous method of producing the same, which is a member formed by covering a surface of a substrate with a multilayer composite layer consisting of a metal coating formed as an undercoat, Al2O3 film formed on the undercoat as a middle layer and Y2O3 sprayed coating formed on the middle layer as a top coat.
    Type: Grant
    Filed: March 7, 2005
    Date of Patent: April 29, 2008
    Assignees: Tocalo Co., Ltd., Tokyo Electron Limited
    Inventors: Yoshio Harada, Junichi Takeuchi, Nobuyuki Nagayama, Kouji Mitsuhashi
  • Publication number: 20080066647
    Abstract: It is to propose an internal member for a plasma treating vessel having excellent resistances to chemical corrosion and plasma erosion under an environment containing a halogen gas and an advantageous method of producing the same, which is a member formed by covering a surface of a substrate with a multilayer composite layer consisting of a metal coating formed as an undercoat, Al2O3 film formed on the undercoat as a middle layer and Y2O3 sprayed coating formed on the middle layer as a top coat.
    Type: Application
    Filed: August 1, 2007
    Publication date: March 20, 2008
    Applicants: Tocalo Co., Ltd., Tokyo Electron Limited
    Inventors: Yoshio Harada, Junichi Takeuchi, Nobuyuki Nagayama, Kouji Mitsuhashi
  • Publication number: 20080070028
    Abstract: It is to propose an internal member for a plasma treating vessel having excellent resistances to chemical corrosion and plasma erosion under an environment containing a halogen gas and an advantageous method of producing the same, which is a member formed by covering a surface of a substrate with a multilayer composite layer consisting of a metal coating formed as an undercoat, Al2O3 film formed on the undercoat as a middle layer and Y2O3 sprayed coating formed on the middle layer as a top coat.
    Type: Application
    Filed: August 1, 2007
    Publication date: March 20, 2008
    Applicants: TOCALO CO., LTD., TOKYO ELECTRON LIMITED
    Inventors: Yoshio Harada, Junichi Takeuchi, Nobuyuki Nagayama, Kouji Mitsuhashi
  • Publication number: 20080070051
    Abstract: It is to propose an internal member for a plasma treating vessel having excellent resistances to chemical corrosion and plasma erosion under an environment containing a halogen gas and an advantageous method of producing the same, which is a member formed by covering a surface of a substrate with a multilayer composite layer consisting of a metal coating formed as an undercoat, Al2O3 film formed on the undercoat as a middle layer and Y2O3 sprayed coating formed on the middle layer as a top coat.
    Type: Application
    Filed: August 1, 2007
    Publication date: March 20, 2008
    Applicants: Tocalo Co., Ltd., Tokyo Electron Limited
    Inventors: Yoshio Harada, Junichi Takeuchi, Nobuyuki Nagayama, Kouji Mitsuhashi
  • Patent number: 7282112
    Abstract: The present invention presents an improved baffle plate for a plasma processing system, wherein the design and fabrication of the baffle plate advantageously provides for a uniform processing plasma in the process space with substantially minimal erosion of the baffle plate.
    Type: Grant
    Filed: December 14, 2004
    Date of Patent: October 16, 2007
    Assignee: Tokyo Electron Limited
    Inventors: Shinya Nishimoto, Kouji Mitsuhashi, Hiroyuki Nakayama
  • Publication number: 20070204794
    Abstract: The present invention presents an improved baffle plate for a plasma processing system, wherein the design and fabrication of the baffle plate advantageously provides for a uniform processing plasma in the process space with substantially minimal erosion of the baffle plate.
    Type: Application
    Filed: May 7, 2007
    Publication date: September 6, 2007
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Shinya Nishimoto, Kouji Mitsuhashi, Hiroyuki Nakayama
  • Publication number: 20070125494
    Abstract: The present invention presents an improved bellows shield for a plasma processing system, wherein the design and fabrication of the bellows shield coupled to a substrate holder electrode advantageously provides protection of a bellows with substantially minimal erosion of the bellows shield.
    Type: Application
    Filed: February 5, 2007
    Publication date: June 7, 2007
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Hidehito SAIGUSA, Taira Takase, Kouji Mitsuhashi, Hiroyuki Nakayama
  • Publication number: 20070107846
    Abstract: The present invention presents an improved baffle plate for a plasma processing system, wherein the design and fabrication of the baffle plate advantageously provides for a uniform processing plasma in the process space with substantially minimal erosion of the baffle plate.
    Type: Application
    Filed: January 5, 2007
    Publication date: May 17, 2007
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Hidehito Saigusa, Taira Takase, Kouji Mitsuhashi, Hiroyuki Nakayama
  • Publication number: 20070102287
    Abstract: The present invention presents an improved optical window deposition shield an improved optical window deposition shield for optical access to a process space in a plasma processing system through a deposition shield, wherein the design and fabrication of the optical window deposition shield advantageously provides an optically clean access to the processing plasma in the process space while sustaining substantially minimal erosion of the optical window deposition shield.
    Type: Application
    Filed: January 5, 2007
    Publication date: May 10, 2007
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Shinya Nishimoto, Kouji Mitsuhashi, Hidehito Saigusa, Taira Takase, Hiroyuki Nakayama
  • Publication number: 20070096658
    Abstract: The present invention presents an improved upper electrode for a plasma processing system, wherein the design and fabrication of an electrode plate coupled to an upper assembly advantageously provides gas injection of a process gas with substantially minimal erosion of the electrode plate.
    Type: Application
    Filed: December 5, 2006
    Publication date: May 3, 2007
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Hidehito SAIGUSA, Taira Takase, Kouji Mitsuhashi, Hiroyuki Nakayama
  • Patent number: 7204912
    Abstract: The present invention presents an improved bellows shield for a plasma processing system, wherein the design and fabrication of the bellows shield coupled to a substrate holder electrode advantageously provides protection of a bellows with substantially minimal erosion of the bellows shield.
    Type: Grant
    Filed: September 30, 2002
    Date of Patent: April 17, 2007
    Assignee: Tokyo Electron Limited
    Inventors: Hidehito Saigusa, Taira Takase, Kouji Mitsuhashi, Hiroyuki Nakayama
  • Publication number: 20070034337
    Abstract: The present invention presents an improved upper electrode for a plasma processing system, wherein the design and fabrication of an electrode plate with a deposition shield coupled to the upper electrode advantageously provides gas injection of a process gas with substantially minimal erosion of the upper electrode while providing protection to a chamber interior.
    Type: Application
    Filed: October 23, 2006
    Publication date: February 15, 2007
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Shinya Nishimoto, Kouji Mitsuhashi, Hiroyuki Nakayama
  • Publication number: 20070028839
    Abstract: The present invention presents an improved deposition shield for surrounding a process space in a plasma processing system, wherein the design and fabrication of the deposition shield advantageously provides for a clean processing plasma in the process space with substantially minimal erosion of the deposition shield.
    Type: Application
    Filed: October 16, 2006
    Publication date: February 8, 2007
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Hidehito Saigusa, Taira Takase, Kouji Mitsuhashi, Hiroyuki Nakayama
  • Patent number: 7166166
    Abstract: The present invention presents an improved baffle plate for a plasma processing system, wherein the design and fabrication of the baffle plate advantageously provides for a uniform processing plasma in the process space with substantially minimal erosion of the baffle plate.
    Type: Grant
    Filed: September 30, 2002
    Date of Patent: January 23, 2007
    Assignee: Tokyo Electron Limited
    Inventors: Hidehito Saigusa, Taira Takase, Kouji Mitsuhashi, Hiroyuki Nakayama
  • Patent number: 7166200
    Abstract: The present invention presents an improved upper electrode for a plasma processing system, wherein the design and fabrication of an electrode plate coupled to an upper assembly advantageously provides gas injection of a process gas with substantially minimal erosion of the electrode plate.
    Type: Grant
    Filed: September 30, 2002
    Date of Patent: January 23, 2007
    Assignee: Tokyo Electron Limited
    Inventors: Hidehito Saigusa, Taira Takase, Kouji Mitsuhashi, Hiroyuki Nakayama
  • Patent number: 7163585
    Abstract: The present invention presents an improved optical window deposition shield for optical access to a process space in a plasma processing system through a deposition shield, wherein the design and fabrication of the optical window deposition shield advantageously provides an optically clean access to the processing plasma in the process space while sustaining substantially minimal erosion of the optical window deposition shield.
    Type: Grant
    Filed: March 19, 2004
    Date of Patent: January 16, 2007
    Assignee: Tokyo Electron Limited
    Inventors: Shinya Nishimoto, Kouji Mitsuhashi, Hidehito Saigusa, Taira Takase, Hiroyuki Nakayama
  • Patent number: 7147749
    Abstract: The present invention presents an improved upper electrode for a plasma processing system, wherein the design and fabrication of an electrode plate with a deposition shield coupled to the upper electrode advantageously provides gas injection of a process gas with substantially minimal erosion of the upper electrode while providing protection to a chamber interior.
    Type: Grant
    Filed: September 30, 2002
    Date of Patent: December 12, 2006
    Assignee: Tokyo Electron Limited
    Inventors: Shinya Nishimoto, Kouji Mitsuhashi, Hiroyuki Nakayama
  • Patent number: 7137353
    Abstract: The present invention presents an improved deposition shield for surrounding a process space in a plasma processing system, wherein the design and fabrication of the deposition shield advantageously provides for a clean processing plasma in the process space with substantially minimal erosion of the deposition shield.
    Type: Grant
    Filed: September 30, 2002
    Date of Patent: November 21, 2006
    Assignee: Tokyo Electron Limited
    Inventors: Hidehito Saigusa, Taira Takase, Kouji Mitsuhashi, Hiroyuki Nakayama
  • Publication number: 20060096703
    Abstract: A focus ring is shaped by cutting off a silicon carbide body formed by a sintering method or a CVD method. The shaped focus ring is exposed to a plasma generated from at least one of a carbon tetra fluoride gas and an oxygen gas for producing impurities, and the impurities are introduced to void-like defects existing in the vicinity of a surface of the focus ring. Subsequently, positrons are injected in the vicinity of the surface of the focus ring into which the impurities are introduced, and the defect density in the vicinity of the surface of the focus ring is detected by the positron annihilation method.
    Type: Application
    Filed: November 10, 2005
    Publication date: May 11, 2006
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Tsuyoshi Moriya, Kouji Mitsuhashi, Akira Uedono