Patents by Inventor Kouji Mitsuhashi

Kouji Mitsuhashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20060099444
    Abstract: A ceramic sprayed member-cleaning method which is capable of reliably suppressing desorption and attachment of water. The surface of a ceramic sprayed member and water are chemically bonded to each other, whereby the water is stabilized. Water physically adsorbed on the surface of the ceramic sprayed member is desorbed.
    Type: Application
    Filed: November 8, 2005
    Publication date: May 11, 2006
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Tsuyoshi Moriya, Kouji Mitsuhashi
  • Publication number: 20050150456
    Abstract: A processing device in which maintenance can be easily carried out and a burden on a worker can be reduced, and a method of maintaining the device are provided. An upper electrode unit 106 structuring a ceiling portion of a processing chamber 102 of an etching device 100 is structured from a lower assembly 128 at a processing chamber 102 side including an upper electrode 130, and an upper assembly 128 at a power supply side including an electro-body 144. A lock mechanism 156 is released, and after the upper assembly 126 is independently raised and removed by a lift mechanism 164, maintenance of the upper assembly 126 and/or the lower assembly 128 is carried out. The lock mechanism 156 is locked, and after the upper and lower assemblies 126, 128 are integrally raised and removed by the lift mechanism 164, maintenance of an interior of the processing chamber 102 is carried out.
    Type: Application
    Filed: March 1, 2005
    Publication date: July 14, 2005
    Inventors: Shigeru Senzaki, Toshiki Sasaki, Tadashi Aoto, Nobuyuki Nagayama, Kouji Mitsuhashi
  • Publication number: 20050147852
    Abstract: It is to propose an internal member for a plasma treating vessel having excellent resistances to chemical corrosion and plasma erosion under an environment containing a halogen gas and an advantageous method of producing the same, which is a member formed by covering a surface of a substrate with a multilayer composite layer consisting of a metal coating formed as an undercoat, Al2O3 film formed on the undercoat as a middle layer and Y2O3 sprayed coating formed on the middle layer as a top coat.
    Type: Application
    Filed: March 7, 2005
    Publication date: July 7, 2005
    Applicants: Tocalo Co., Ltd., Tokyo Electron Co., Ltd.
    Inventors: Yoshio Harada, Junichi Takeuchi, Tatsuya Hamaguchi, Nobuyuki Nagayama, Kouji Mitsuhashi
  • Patent number: 6899786
    Abstract: A processing device in which maintenance can be easily carried out and a burden on a worker can be reduced, and a method of maintaining the device are provided. An upper electrode unit 106 structuring a ceiling portion of a processing chamber 102 of an etching device 100 is structured from a lower assembly 128 at a processing chamber 102 side including an upper electrode 130, and an upper assembly 126 at a power supply side including an electro-body 144. A lock mechanism 156 is released, and after the upper assembly 126 is independently raised and removed by a lift mechanism 164, maintenance of the upper assembly 126 and/or the lower assembly 128 is carried out. The lock mechanism 156 is locked, and after the upper and lower assemblies 126, 128 are integrally raised and removed by the lift mechanism 164, maintenance of an interior of the processing chamber 102 is carried out.
    Type: Grant
    Filed: May 16, 2001
    Date of Patent: May 31, 2005
    Assignee: Tokyo Electron Limited
    Inventors: Shigeru Senzaki, Toshiki Sasaki, Tadashi Aoto, Nobuyuki Nagayama, Kouji Mitsuhashi
  • Publication number: 20050103268
    Abstract: The present invention presents an improved baffle plate for a plasma processing system, wherein the design and fabrication of the baffle plate advantageously provides for a uniform processing plasma in the process space with substantially minimal erosion of the baffle plate.
    Type: Application
    Filed: December 14, 2004
    Publication date: May 19, 2005
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Shinya Nishimoto, Kouji Mitsuhashi, Hiroyuki Nakayama
  • Patent number: 6884516
    Abstract: It is to propose an internal member for a plasma treating vessel having excellent resistances to chemical corrosion and plasma erosion under an environment containing a halogen gas and an advantageous method of producing the same, which is a member formed by covering a surface of a substrate with a multilayer composite layer consisting of a metal coating formed as an undercoat, Al2O3 film formed on the undercoat as a middle layer and Y2O3 sprayed coating formed on the middle layer as a top coat.
    Type: Grant
    Filed: May 21, 2004
    Date of Patent: April 26, 2005
    Assignees: Tocalo Co., Ltd., Tokyo Electron Co., Ltd.
    Inventors: Yoshio Harada, Junichi Takeuchi, Tatsuya Hamaguchi, Nobuyuki Nagayama, Kouji Mitsuhashi
  • Patent number: 6837966
    Abstract: The present invention presents an improved baffle plate for a plasma processing system, wherein the design and fabrication of the baffle plate advantageously provides for a uniform processing plasma in the process space with substantially minimal erosion of the baffle plate.
    Type: Grant
    Filed: September 30, 2002
    Date of Patent: January 4, 2005
    Assignee: Tokyo Electron Limeted
    Inventors: Shinya Nishimoto, Kouji Mitsuhashi, Hiroyuki Nakayama
  • Publication number: 20040216667
    Abstract: [Problem to be solved] The present invention is to provide an internal member of a plasma processing vessel which is capable of suppressing peeling off of a thermally sprayed film formed as a top coat layer.
    Type: Application
    Filed: November 28, 2003
    Publication date: November 4, 2004
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Kouji Mitsuhashi, Hiroyuki Nakayama, Nobuyuki Nagayama, Tsuyoshi Moriya, Hiroshi Nagaike
  • Publication number: 20040216769
    Abstract: There is provided a method of cleaning completely a deposit on the surface of the member to be cleaned, of a plasma processing apparatus without any damage of the coating which has been formed anodized coating or sprayed coating on the surface of the member to cleaned. The method of cleaning comprises a chemical cleaning step of dipping in an organic solvent (e.g. acetone) (a); and then a step blowing pressurized air so as to remove the deposit which has been peeled from a buffer plate (14) treated chemically (b); and then, of removing physically the deposit remained at the edges of the buffer plate (14) by blasting by using a CO2 blast apparatus (105), and f steps of dipping the buffer plate (14) in pure water (104), and imparting supersonic vibration to remove the deposit remaining on a buffer plate (14).
    Type: Application
    Filed: May 27, 2004
    Publication date: November 4, 2004
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Taira Takase, Nobuyuki Nagayama, Kouji Mitsuhashi, Hiroyuki Nakayama
  • Publication number: 20040214026
    Abstract: It is to propose an internal member for a plasma treating vessel having excellent resistances to chemical corrosion and plasma erosion under an environment containing a halogen gas and an advantageous method of producing the same, which is a member formed by covering a surface of a substrate with a multilayer composite layer consisting of a metal coating formed as an undercoat, Al2O3 film formed on the undercoat as a middle layer and Y2O3 sprayed coating formed on the middle layer as a top coat.
    Type: Application
    Filed: May 21, 2004
    Publication date: October 28, 2004
    Applicants: Tocalo Co., Ltd., Tokyo Electron Co., Ltd.
    Inventors: Yoshio Harada, Junichi Takeuchi, Tatsuya Hamaguchi, Nobuyuki Nagayama, Kouji Mitsuhashi
  • Publication number: 20040200804
    Abstract: A member of processing a quartz member for a plasma processing device capable of suppressing the production of particles at the beginning of the use thereof and the production of chips thereafter, the quartz member for the plasma processing device, and the plasma processing device having the quartz member mounted thereon, the method comprising the steps of removing a large number of cracks 155 produced, after a diamond grinding, in the quartz member 151 for the plasma processing device used for a shield ring and a focus ring by performing a surface processing with abrasive grains of, for example, #320 to 400 in grain size, and performing the surface processing by using abrasive grains of smaller grain size to remove ruptured layers 163 while maintaining irregularities capable of adhering and holding deposit thereto.
    Type: Application
    Filed: March 25, 2004
    Publication date: October 14, 2004
    Inventors: Norikazu Sugiyama, Hidehito Saegusa, Nobuyuki Okayama, Shunichi Iimuro, Kosuke Imafuku, Nobuyuki Nagayama, Kouji Mitsuhashi, Hiroyuki Nakayama, Yahui Huang
  • Patent number: 6798519
    Abstract: The present invention presents an improved optical window deposition shield an improved optical window deposition shield for optical access to a process space in a plasma processing system through a deposition shield, wherein the design and fabrication of the optical window deposition shield advantageously provides an optically clean access to the processing plasma in the process space while sustaining substantially minimal erosion of the optical window deposition shield.
    Type: Grant
    Filed: September 30, 2002
    Date of Patent: September 28, 2004
    Assignee: Tokyo Electron Limited
    Inventors: Shinya Nishimoto, Kouji Mitsuhashi, Hidehito Saigusa, Taira Takase, Hiroyuki Nakayama
  • Patent number: 6790289
    Abstract: There is provided a method of cleaning completely a deposit on the surface of the member to be cleaned, of a plasma processing apparatus without any damage of the coating which has been formed anodized coating or sprayed coating on the surface of the member to cleaned. The method of cleaning comprises a chemical cleaning step of dipping in an organic solvent (e.g. acetone) (a); and then a step blowing pressurized air so as to remove the deposit which has been peeled from a buffer plate (14) treated chemically (b); and then, of removing physically the deposit remained at the edges of the buffer plate (14) by blasting by using a CO2 blast apparatus (105), and f steps of dipping the buffer plate (14) in pure water (104), and imparting supersonic vibration to remove the deposit remaining on a buffer plate (14).
    Type: Grant
    Filed: March 12, 2003
    Date of Patent: September 14, 2004
    Assignee: Tokyo Electric Limited
    Inventors: Taira Takase, Nobuyuki Nagayama, Kouji Mitsuhashi, Hiroyuki Nakayama
  • Publication number: 20040173155
    Abstract: The present invention presents an improved optical window deposition shield an improved optical window deposition shield for optical access to a process space in a plasma processing system through a deposition shield, wherein the design and fabrication of the optical window deposition shield advantageously provides an optically clean access to the processing plasma in the process space while sustaining substantially minimal erosion of the optical window deposition shield.
    Type: Application
    Filed: March 19, 2004
    Publication date: September 9, 2004
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Shinya Nishimoto, Kouji Mitsuhashi, Hidehito Saigusa, Taira Takase, Hiroyuki Nakayama
  • Patent number: 6783863
    Abstract: It is to propose an internal member for a plasma treating vessel having excellent resistances to chemical corrosion and plasma erosion under an environment containing a halogen gas and an advantageous method of producing the same, which is a member formed by covering a surface of a substrate with a multilayer composite layer consisting of a metal coating formed as an undercoat, Al2O3 film formed on the undercoat as a middle layer and Y2O3 sprayed coating formed on the middle layer as a top coat.
    Type: Grant
    Filed: August 3, 2001
    Date of Patent: August 31, 2004
    Assignees: Tocalo Co., Ltd., Tokyo Electron Co., Ltd.
    Inventors: Yoshio Harada, Junichi Takeuchi, Tatsuya Hamaguchi, Nobuyuki Nagayama, Kouji Mitsuhashi
  • Publication number: 20040163591
    Abstract: With a coating-film-forming coating agent 51 used as a resist including a main component such as cyclorubber-bisazide and a photosensitive component, by immersing deposits 52 deposited on the coating film of the coating agent 51 formed on an in-chamber component 50 in a release liquid such as acetone together with the in-chamber component 50 removed from within a chamber 22, the deposits 52 attached to the coating film can be removed along with the coating film from the in-chamber component 50 concurrently with the release of the coating film.
    Type: Application
    Filed: November 10, 2003
    Publication date: August 26, 2004
    Inventors: Nobuyuki Nagayama, Kouji Mitsuhashi, Hiroyuki Nakayama
  • Publication number: 20040144319
    Abstract: A plasma treatment container internal member disposed in a plasma treatment container for micromachining a treated matter by a plasma etching treatment, wherein, as a pre-treatment, an oxidized film (111) is formed on the surface of the base material (101) of the treatment container internal member by an anode oxidation using plasma discharge, and a thermally sprayed film (121) is formed on the oxidized film (111).
    Type: Application
    Filed: November 25, 2003
    Publication date: July 29, 2004
    Inventors: Nobuyuki Nagayama, Hiroyuki Nakayama, Kouji Mitsuhashi
  • Publication number: 20040108068
    Abstract: A processing device in which maintenance can be easily carried out and a burden on a worker can be reduced, and a method of maintaining the device are provided. An upper electrode unit 106 structuring a ceiling portion of a processing chamber 102 of an etching device 100 is structured from a lower assembly 128 at a processing chamber 102 side including an upper electrode 130, and an upper assembly 128 at a power supply side including an electro-body 144. A lock mechanism 156 is released, and after the upper assembly 126 is independently raised and removed by a lift mechanism 164, maintenance of the upper assembly 126 and/or the lower assembly 128 is carried out. The lock mechanism 156 is locked, and after the upper and lower assemblies 126, 128 are integrally raised and removed by the lift mechanism 164, maintenance of an interior of the processing chamber 102 is carried out.
    Type: Application
    Filed: November 18, 2002
    Publication date: June 10, 2004
    Inventors: Shigeru Senzaki, Toshiki Sasaki, Tadashi Aoto, Nobuyuki Nagayama, Kouji Mitsuhashi
  • Publication number: 20040060658
    Abstract: The present invention presents an improved baffle plate for a plasma processing system, wherein the design and fabrication of the baffle plate advantageously provides for a uniform processing plasma in the process space with substantially minimal erosion of the baffle plate.
    Type: Application
    Filed: September 30, 2002
    Publication date: April 1, 2004
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Shinya Nishimoto, Kouji Mitsuhashi, Hiroyuki Nakayama
  • Publication number: 20040060661
    Abstract: The present invention presents an improved upper electrode for a plasma processing system, wherein the design and fabrication of an electrode plate with a deposition shield coupled to the upper electrode advantageously provides gas injection of a process gas with substantially minimal erosion of the upper electrode while providing protection to a chamber interior.
    Type: Application
    Filed: September 30, 2002
    Publication date: April 1, 2004
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Shinya Nishimoto, Kouji Mitsuhashi, Hiroyuki Nakayama