Abstract: A compressor includes a compression mechanism and a drive shaft having an oil supply hole opened through an outer peripheral surface of the drive shaft to supply oil to a bearing surface of the drive shaft. An oil discharge passage communicating with the oil supply hole is formed by a flat surface or a recessed surface at a portion of the outer peripheral surface of the drive shaft. A trailing edge of the oil discharge passage is displaced behind a trailing edge of the oil supply hole with respect to a rotation direction of the drive shaft. A leading edge of the oil discharge passage is displaced behind a leading edge of the oil supply hole with respect to the rotation direction of the drive shaft. The oil discharge passage has a width that is no larger than a diameter of the oil supply hole.

Abstract: A method for producing a patch comprising a support layer and an adhesive agent layer arranged on at least one surface of the support layer, the method comprising: step A) obtaining an adhesive agent layer composition comprising free ropinirole in an amount which results in a content of 5 to 13.2% by mass in an obtained adhesive agent layer; step B) heating the adhesive agent layer composition at a temperature in a range from 50 to 76° C. for 5 minutes to 24 hours; and step C) cooling the heated adhesive agent layer composition to normal temperature at an average rate of temperature drop of 1 to 20° C./hour, thereby obtaining the adhesive agent layer comprising the free ropinirole at a supersaturated concentration in a dissolved form.

Abstract: A semiconductor substrate has a main surface with an n type offset region having a trench portion formed of a plurality of trenches extending in a direction from an n+ drain region toward an n+ source region. The plurality of trenches each have a conducting layer therein extending in the main surface in the direction from the n+ drain region toward the n+ source region.

Abstract: A compressor includes a compression mechanism and a drive shaft having an oil supply hole opened through an outer peripheral surface of the drive shaft to supply oil to a bearing surface of the drive shaft. An oil discharge passage communicating with the oil supply hole is formed by a flat surface or a recessed surface at a portion of the outer peripheral surface of the drive shaft. A trailing edge of the oil discharge passage is displaced behind a trailing edge of the oil supply hole with respect to a rotation direction of the drive shaft. A leading edge of the oil discharge passage is displaced behind a leading edge of the oil supply hole with respect to the rotation direction of the drive shaft. The oil discharge passage has a width that is no larger than a diameter of the oil supply hole.

Abstract: An image processing apparatus includes: an imaging device; a main memory that stores motion picture data acquired by the imaging device; a motion picture compressing unit that compresses the motion picture data stored in the main memory; a still image frame acquiring unit that acquires a still image frame at arbitrary timing from the motion picture data acquired by the imaging device; a line memory that stores still image data that is a part of the still image frame acquired by the still image frame acquiring unit; and a still image compressing unit that performs a compression process of the still image data stored in the line memory. The still image compressing unit compresses the still image data in real time. The main memory stores the motion picture data and stores compressed data that is compressed in real time by the still image compressing unit.

Abstract: This film forming method comprises: a first material gas supply step (A) wherein a first raw material gas is supplied over the substrate to be processed so that a first chemical adsorption layer, which is adsorbed on the substrate by means of the first raw material gas is formed on the substrate to be processed, a second material gas supply step (C) wherein a second raw material that is different from the first raw material gas is supplied over the substrate, on which the first chemical adsorption layer has been formed, so that a second chemical adsorption layer, which is adsorbed by means of the second raw material gas, is formed on the first chemical adsorption layer; and a plasma processing step (E) wherein a plasma processing is carried on at least the first and second chemical adsorption layers using microwave plasma.

Abstract: A method for producing a patch comprising a support layer and an adhesive agent layer arranged on at least one surface of the support layer, the method comprising: step A) obtaining an adhesive agent layer composition comprising free ropinirole in an amount which results in a content of 5 to 13.2% by mass in an obtained adhesive agent layer; step B) heating the adhesive agent layer composition at a temperature in a range from 50 to 76° C. for 5 minutes to 24 hours; and step C) cooling the heated adhesive agent layer composition to normal temperature at an average rate of temperature drop of 1 to 20° C./hour, thereby obtaining the adhesive agent layer comprising the free ropinirole at a supersaturated concentration in a dissolved form.

Abstract: Provided is a steam sterilizer capable of performing water vapor sterilization without using a vacuum pump as a mechanism for bringing the inside of a pressure vessel into vacuum. The steam sterilizer includes a pressure vessel (32) which stores an object to be sterilized and in which sterilization is performed with water vapor supplied from a steam piping, and vacuum-generating means (34) which is connected to the pressure vessel (32) and brings the inside of the pressure vessel (32) into a vacuum state. The vacuum-generating means (34) includes a water ejector (48), a tank (50) for storing supply water supplied from an outside, and a pump (52) for supplying the supply water inside the tank (50) to the water ejector (48).

Abstract: An image capturing device (100) is provided with: an image capturing unit (102) which generates, by continuous image capturing, a plurality of pieces of image data which are continuous in the time direction; an image processing unit which corrects a compression rate of the image data on the basis of a correction factor for correcting the image data, and performs compression coding by use of an intra-frame predictive coding system; a data control unit (124) which stores the image data, which has been subjected to the compression coding, in an image storage unit; a current compression rate derivation unit (130) which derives a current compression rate which is an actual compression rate of the image data which has been subjected to the compression coding; a current compression rate holding unit (132) which holds a plurality of current compression rates continuous in the time direction; a subsequent compression rate prediction unit (134) which predicts a subject compression rate, which is a compression rate of i

Abstract: This film forming method comprises: a first material gas supply step (A) wherein a first raw material gas is supplied over the substrate to be processed so that a first chemical adsorption layer, which is adsorbed on the substrate by means of the first raw material gas is formed on the substrate to be processed, a second material gas supply step (C) wherein a second raw material that is different from the first raw material gas is supplied over the substrate, on which the first chemical adsorption layer has been formed, so that a second chemical adsorption layer, which is adsorbed by means of the second raw material gas, is formed on the first chemical adsorption layer; and a plasma processing step (E) wherein a plasma processing is carried on at least the first and second chemical adsorption layers using microwave plasma.

Abstract: An image processing apparatus includes: an imaging device; a main memory that stores motion picture data acquired by the imaging device; a motion picture compressing unit that compresses the motion picture data stored in the main memory; a still image frame acquiring unit that acquires a still image frame at arbitrary timing from the motion picture data acquired by the imaging device; a line memory that stores still image data that is a part of the still image frame acquired by the still image frame acquiring unit; and a still image compressing unit that performs a compression process of the still image data stored in the line memory. The still image compressing unit compresses the still image data in real time. The main memory stores the motion picture data and stores compressed data that is compressed in real time by the still image compressing unit.

Abstract: “The invention provides a photoelectric conversion element manufacturing apparatus that forms a semiconductor stack film on a substrate by using microwave plasma CVD. The apparatus includes a chamber which is a enclosed space containing a base, on which the a subject substrate for thin-film formation is mounted, a first gas supply unit which supplies plasma excitation gas to a plasma excitation region in the chamber, a pressure regulation unit which regulates pressure in the chamber, a second gas supply unit which supplies raw gas to a plasma diffusion region in the chamber, a microwave application unit which applies microwaves into the chamber, and a bias voltage application unit which selects and applies a substrate bias voltage to the substrate according to the type of gas.

Abstract: A processing method performs a predetermined process to an object by supplying a process gas at a prescribed flow rate into a process container to which a gas supply unit and an exhaust system are connected. The processing method includes a first process of setting the gas supply unit to supply a process gas at a flow rate greater than the prescribed flow rate of a predetermined process for a predetermined short time from a gas channel while exhausting an atmosphere in the process container through the exhaust system; and a second process of setting the gas supply unit to supply the process gas at the prescribed flow rate from the gas channel after the first process is completed.

Abstract: An image capturing device (100) is provided with: an image capturing unit (102) which generates, by continuous image capturing, a plurality of pieces of image data which are continuous in the time direction; an image processing unit which corrects a compression rate of the image data on the basis of a correction factor for correcting the image data, and performs compression coding by use of an intra-frame predictive coding system; a data control unit (124) which stores the image data, which has been subjected to the compression coding, in an image storage unit; a current compression rate derivation unit (130) which derives a current compression rate which is an actual compression rate of the image data which has been subjected to the compression coding; a current compression rate holding unit (132) which holds a plurality of current compression rates continuous in the time direction; a subsequent compression rate prediction unit (134) which predicts a subject compression rate, which is a compression rate of i

Abstract: A spraying means is arranged on the scum-flowing wall surface side of wall surfaces forming a scum inlet of a scum discharging mechanism. The spraying means sprays pressured water upward along the wall surface on the scum-flowing side from when a part of the scum inlet is submerged in water until the scum begins to flow into the scum inlet. As a result, even large lumps of scum exceeding 10 cm in thickness (diameter) may be lead smoothly into a pipe by the pressured water, and the amount of discharged water accompanying scum discharge may be reduced to 1/20 to 1/30 than by a conventional scum removing apparatus.

Abstract: A processing apparatus includes a process container having a placing table for placing a processing object, an exhaust system having vacuum pumps and a pressure control valve for exhausting atmosphere in the process container. A gas injection unit having a gas ejection hole is provided in the process container, as well as a gas supplying unit for supplying a process gas to the gas injection unit. The entire process apparatus is controlled by a controlling unit. The control unit controls the exhaust system and the gas supplying unit. When starting a predetermined process, the process gas at a flow rate greater than a prescribed flow rate is supplied for a short time while exhausting the atmosphere in the process container by the exhaust system, and then the process gas at a prescribed flow rate is supplied.

Abstract: It has been found out that, among transparent conductive layers, a zinc oxide layer has a function of preventing diffusion of sodium. An electronic apparatus is obtained which uses the zinc oxide layer as an electrode of the electronic apparatus and also as a diffusion preventing layer for preventing diffusion of sodium from a glass substrate.

Abstract: Provided is a semiconductor device in which occurrence of humps can be suppressed and variations in characteristics of the semiconductor device can be suppressed. The semiconductor device includes: an element isolation film (200) formed in a semiconductor layer, the element isolation film (200) defining an element formation region; a gate electrode (130) formed above the element formation region, the gate electrode (130) having ends respectively extending above the element isolation film (200); and impurity regions (110) which are to be a source region and a drain region which are formed in the element formation region so as to sandwich therebetween a channel formation region immediately under the gate electrode (130), the gate electrode (130) including at each of the ends thereof a high work function region (124) in which work function is higher than work function in other regions over at least a part of an interface between the element formation region and the element isolation film (200).

Abstract: Provided is an artificial lymph node that is persistently effective in cancer treatment in vivo.

Abstract: Provided is a semiconductor wafer with a scribe line region and a plurality of element forming regions partitioned by the scribe line region, the semiconductor wafer including: conductive patterns formed in the scribe line region; and an island-shaped passivation film formed above at least a conductive pattern, which is or may be exposed to a side surface of a semiconductor chip obtained by dicing the semiconductor wafer along the scribe line region, among the conductive patterns, so that the island-shaped passivation film is opposed to the conductive pattern.