Abstract: The present disclosure is related to an organic EL element including a capping layer that contains a compound represented by formula (A-1). In the formula, A and X are monovalent groups represented by formula (B-1) having 1 binding site among R1 to R6. Z represents a monovalent group represented by formula (B-1) having 1 binding site among R1 to R6, an aromatic hydrocarbon group, an aromatic heterocyclic group or a fused polycyclic aromatic group. Ar is a single bond or a divalent group of an aromatic hydrocarbon group, an aromatic heterocyclic group, or a fused polycyclic aromatic group. R1 to R6 are each defined in the specification, and Q represents a nitrogen atom, an oxygen atom, or a sulfur atom.

Abstract: A semiconductor device includes: a semiconductor layer; first and second transistors; one or more first source pads and a first gate pad of the first transistor in a first region of the upper surface of the semiconductor layer; and one or more second source pads and a second gate pad of the second transistor in a second region of the upper surface adjacent to the first region in a plan view of the semiconductor layer. In a plan view of the semiconductor layer, a virtual straight line connecting the centers of the first and second gate pads passes through the center of the semiconductor layer and forms a 45 degree angle with each side of the semiconductor layer. An upper surface boundary line between the first and second regions monotonically changes in the directions of extension of the longer and shorter sides of the semiconductor layer.

Abstract: An object of the present invention is to provide an organic EL device having a capping layer constituted by a material having (1) high absorption coefficient, (2) high refractive index, (3) good thin film stability, (4) excellent durability, (5) excellent light resistance, (6) no absorption in the blue, green, and red wavelength regions, respectively. Since an arylamine based material having a specific structure in the present invention is excellent in the stability and durability of the thin film, an organic EL device obtained by selecting amine compounds with high absorbance in the absorption spectrum at concentration 10?5 mol/L at wavelengths of 400 nm to 410 nm, from amine compounds having a specific benzazole ring structure with a high refractive index as a material of a capping layer, exhibits good characteristics.

Abstract: An objective of the present invention is to provide an organic EL device having high efficiency, low driving voltage and long lifetime by using a material for organic EL devices offering excellent hole injectability and transportability, electron blockability, stability in a thin-film state, and durability, and also by employing, in combination, the aforementioned material and various other materials for organic EL devices offering excellent hole/electron injectability and transportability, electron blockability, stability in a thin-film state, and durability, in a manner that the properties of each material can be brought out effectively. The present invention relates to an organic electroluminescence device having, between an anode and a cathode, at least a hole transport layer, a light-emitting layer, and an electron transport layer in this order from the anode side, wherein the hole transport layer contains a triarylamine compound having a specific structure.

Abstract: A face-down mountable chip-size package semiconductor device includes a semiconductor layer and N (N is an integer greater than or equal to three) vertical MOS transistors in the semiconductor layer. Each of the N vertical MOS transistors includes, on an upper surface of the semiconductor layer, a gate pad electrically connected to a gate electrode of the vertical MOS transistor and one or more source pads electrically connected to a source electrode of the vertical MOS transistor. The semiconductor layer includes a semiconductor substrate. The semiconductor substrate functions as a common drain region for the N vertical MOS transistors. For each of the N vertical MOS transistors, a surface area of the vertical MOS transistor in a plan view of the semiconductor layer increases with an increase in a maximum specified current of the vertical MOS transistor.

Abstract: An objective of the present invention is to provide a material for organic EL devices offering excellent hole injectability and transportability, electron blockability, stability in a thin-film state, and durability, and also to provide an organic EL device having high efficiency, low driving voltage and long lifetime by employing, in combination, the aforementioned material and various materials for organic EL devices offering excellent hole/electron injectability and transportability, electron blockability, stability in a thin-film state, and durability, in a manner that the properties of each of the materials can be brought out effectively. The present invention relates to an organic EL device containing a specific arylamine compound as a material constituting a second hole transport layer, wherein the difference between the HOMO level of the second hole transport layer and the HOMO level of a first hole transport layer is 0.15 eV or less.

Abstract: An electric compressor includes a compression part, an electric motor, an inverter device, and a housing. The inverter device includes an inverter circuit, a noise reduction unit, and a circuit board. The noise reduction unit includes a common mode choke coil and a smoothing capacitor. The common mode choke coil includes an annular core, a pair of winding wires, and an annular electrical conductor. The electrical conductor is split into a first metal plate and a second metal plate in a circumferential direction. The first metal plate is thermally coupled to the housing. The second metal plate is electrically connected to the first metal plate. An electrical resistance value of the first metal plate is larger than that of the second metal plate.

Abstract: A semiconductor device of a hybrid type includes: a light-emitting element forming a power loop; a semiconductor integrated circuit element including a switching element; and a bypass capacitor. The light-emitting element and the switching element constitute a layered body in which respective principal surfaces of the light-emitting element and the switching element are layered in parallel and face-to-face. The bypass capacitor includes one electrode connected to a lower element of the layered body, and an other electrode connected to an upper element of the layered body. In a plan view, when a direction from the one electrode to the other electrode inside the bypass capacitor is a first direction, the bypass capacitor is arranged so that a side of the bypass capacitor parallel to the first direction includes a portion that is parallel to and faces one peripheral side of the layered body.

Abstract: A power amplification device includes: a first semiconductor chip including a first main surface and a second main surface; a first field-effect transistor, a first drain finger part, a plurality of first gate finger parts, and a source finger part; a sub-mount substrate including a third main surface and a fourth main surface; and a first filled via provided penetrating from the third main surface to the fourth main surface. In plan view, the first filled via has a rectangular shape. A long side direction of the first filled via is parallel to a long side direction of the plurality of first gate finger parts. In plan view, the first filled via is positioned to overlap part of one first gate finger part included in the plurality of first gate finger parts.

Abstract: A power amplification device includes: a first semiconductor chip including a first main surface and a second main surface; a first field-effect transistor, a first drain finger part, a plurality of first gate finger parts, and a source finger part; a sub-mount substrate including a third main surface and a fourth main surface; and a first filled via provided penetrating from the third main surface to the fourth main surface. In plan view, the first filled via has a rectangular shape. A long side direction of the first filled via is parallel to a long side direction of the plurality of first gate finger parts. In plan view, the first filled via is positioned to overlap part of one first gate finger part included in the plurality of first gate finger parts.

Abstract: A high-frequency transistor includes a source electrode, a drain electrode, a gate electrode, and a gate drive line that applies a voltage to the gate electrode. An impedance adjustment circuit is connected between the gate electrode and the gate drive line. A characteristic impedance of the gate electrode is Z1, when a connecting point between the impedance adjustment circuit and the gate electrode is viewed from the impedance adjustment circuit. A characteristic impedance of the gate drive line is Z2, when a connecting point between the impedance adjustment circuit and the gate drive line is viewed from the impedance adjustment circuit. X that denotes a characteristic impedance of the impedance adjustment circuit is a value between Z1 and Z2.

Abstract: An electric compressor includes a compression part, an electric motor, an inverter device, and a housing. The inverter device includes an inverter circuit, a noise reduction unit, and a circuit board. The noise reduction unit includes a common mode choke coil and a smoothing capacitor. The common mode choke coil includes an annular core, a pair of winding wires, and an annular electrical conductor. The electrical conductor is split into a first metal plate and a second metal plate in a circumferential direction. The first metal plate is thermally coupled to the housing. The second metal plate is electrically connected to the first metal plate. An electrical resistance value of the first metal plate is larger than that of the second metal plate.

Abstract: A vehicle electric compressor includes a compression part, an electric motor, and an inverter device. The inverter device includes a noise reduction unit that includes a common mode choke coil. The common mode choke coil includes a core, a first winding wire, a second winding wire, and an electrical conductor that covers the core. The electrical conductor has a first insulation layer and a second insulation layer. The first insulation layer, the electrical conductor, and the second insulation layer form a laminated body including a loop-shaped portion that covers the core and a joint portion.

Abstract: A high-frequency amplifier includes: a carrier amplifier amplifying a first signal; a peak amplifier amplifying a second signal; a first transmission line connected between output terminals of the carrier amplifier and the peak amplifier, and having an electrical length equal to one-quarter wavelength of a center frequency in the predetermined frequency band; a second transmission line connected between one end of the first transmission line and the output terminal of the high-frequency amplifier, and having an electrical length equal to one-quarter wavelength of the center frequency; and an impedance compensation circuit with one end connected to a node between the first transmission line and the second transmission line. At the center frequency, an imaginary part of an impedance during viewing of the impedance compensation circuit from the node is opposite in polarity from an imaginary part of an impedance during viewing of the second transmission line from the node.

Abstract: A high-frequency transistor includes a source electrode, a drain electrode, a gate electrode, and a gate drive line that applies a voltage to the gate electrode. An impedance adjustment circuit is connected between the gate electrode and the gate drive line. A characteristic impedance of the gate electrode is Z1, when a connecting point between the impedance adjustment circuit and the gate electrode is viewed from the impedance adjustment circuit. A characteristic impedance of the gate drive line is Z2, when a connecting point between the impedance adjustment circuit and the gate drive line is viewed from the impedance adjustment circuit. X that denotes a characteristic impedance of the impedance adjustment circuit is a value between Z1 and Z2.

Abstract: A high-frequency transistor includes a source electrode, a drain electrode, a gate electrode, and a gate drive line that applies a voltage to the gate electrode. An impedance adjustment circuit is connected between the gate electrode and the gate drive line. A characteristic impedance of the gate electrode is Z1, when a connecting point between the impedance adjustment circuit and the gate electrode is viewed from the impedance adjustment circuit. A characteristic impedance of the gate drive line is Z2, when a connecting point between the impedance adjustment circuit and the gate drive line is viewed from the impedance adjustment circuit. X that denotes a characteristic impedance of the impedance adjustment circuit is a value between Z1 and Z2.

Abstract: A high-frequency transistor includes a source electrode, a drain electrode, a gate electrode, and a gate drive line that applies a voltage to the gate electrode. An impedance adjustment circuit is connected between the gate electrode and the gate drive line. A characteristic impedance of the gate electrode is Z1, when a connecting point between the impedance adjustment circuit and the gate electrode is viewed from the impedance adjustment circuit. A characteristic impedance of the gate drive line is Z2, when a connecting point between the impedance adjustment circuit and the gate drive line is viewed from the impedance adjustment circuit. X that denotes a characteristic impedance of the impedance adjustment circuit is a value between Z1 and Z2.

Abstract: A high-frequency amplifier includes: a carrier amplifier amplifying a first signal; a peak amplifier amplifying a second signal; a first transmission line connected between output terminals of the carrier amplifier and the peak amplifier, and having an electrical length equal to one-quarter wavelength of a center frequency in the predetermined frequency band; a second transmission line connected between one end of the first transmission line and the output terminal of the high-frequency amplifier, and having an electrical length equal to one-quarter wavelength of the center frequency; and an impedance compensation circuit with one end connected to a node between the first transmission line and the second transmission line. At the center frequency, an imaginary part of an impedance during viewing of the impedance compensation circuit from the node is opposite in polarity from an imaginary part of an impedance during viewing of the second transmission line from the node.

Abstract: Provided is a drive device for an alternating current motor which performs vector control on sensorless driving of the alternating current motor in an extremely low speed region without applying a harmonic voltage intentionally while maintaining an ideal PWM waveform. A current and a current change rate of the alternating current motor are detected, and a magnetic flux position inside of the alternating current motor is estimated and calculated in consideration of an output voltage of an inverter which causes this current change. The current change rate is generated on the basis of a pulse waveform of the inverter, and hence the magnetic flux position inside of the alternating current motor can be estimated and calculated without applying a harmonic wave intentionally.

Abstract: A bias circuit 12 includes: a transistor Q5 operable to supply, to an amplifier 11, a bias current in accordance with a base current supplied thereto; a transistor Q3 operable to pass a current in accordance with a reference voltage Vref; a transistor Q2 operable to correct, in accordance with the current passed by the transistor Q3, the base current to be supplied to the transistor Q5, so as to compensate a temperature characteristic represented by the transistor Q5; and a bias changing section (of a transistor Q4, and resistances R5, R6, and R7), connected to a base of the transistor Q5, operable to change, in accordance with a control voltage VSW, an amount of the base current to be supplied to the transistor Q5. The amplifier 11 amplifies, by using the bias current supplied by the bias circuit 12, a radio frequency signal having been inputted thereto.