Abstract: An engineered particle for an energy storage device, the engineered particle includes an active material particle, capable of storing alkali ions, comprising an outer surface, a conductive coating disposed on the outer surface of the active material particle, the conductive coating comprising a MxAlySizOw film; and at least one carbon particle disposed within the conductive coating. For the MxAlySizOw film, M is an alkali selected from the group consisting of Na and Li, and 1?x?4, 0?y?1, 1?z?2, and 3?w?6.

Abstract: An engineered particle for an energy storage device, the engineered particle includes an active material particle, capable of storing alkali ions, comprising an outer surface, a conductive coating disposed on the outer surface of the active material particle, the conductive coating comprising a MxAlySizOw film; and at least one carbon particle disposed within the conductive coating. For the MxAlySizOw film, M is an alkali selected from the group consisting of Na and Li, and 1?x?4, 0?y?1, 1?z?2, and 3?w?6.

Abstract: An engineered particle for an energy storage device, the engineered particle includes an active material particle, capable of storing alkali ions, comprising an outer surface, a conductive coating disposed on the outer surface of the active material particle, the conductive coating comprising a MxAlySizOw film; and at least one carbon particle disposed within the conductive coating. For the MxAlySizOw film, M is an alkali selected from the group consisting of Na and Li, and 1?x?4, 0?y?1, 1?z?2, and 3?w?6.

Abstract: Method(s) and apparatuses for forming a phase change memory. A method includes: forming a crystalline phase-change layer at a first position in along a surface of a first semiconductor layer, and forming an amorphous phase-change layer at a second position along the surface of a second semiconductor layer, wherein the crystalline phase-change layer and the amorphous phase-change layer are in contact.

Abstract: Method(s) and apparatuses for forming a phase change memory. A method includes: forming a crystalline phase-change layer at a first position in along a surface of a first semiconductor layer, and forming an amorphous phase-change layer at a second position along the surface of a second semiconductor layer, wherein the crystalline phase-change layer and the amorphous phase-change layer are in contact.

Abstract: A multi-layered film includes a first electroconductive layer, a dielectric layer, and a second electroconductive layer, which are sequentially layered and disposed on a main surface of a substrate. A lower surface of the dielectric layer comes into contact with an upper surface of the first electroconductive layer, an upper surface and an side surface of the dielectric layer is coated with the second electroconductive layer, and an side end of a portion at which the first electroconductive layer directly overlaps the second electroconductive layer is located inside a side end of the substrate on the main surface of the substrate.

Abstract: A multi-layered film includes an electroconductive layer made of platinum (Pt), a seed layer including lanthanum (La), nickel (Ni), and oxygen (O), and a dielectric layer being preferentially oriented in a c-axis direction, which are at least sequentially disposed on a main surface of a substrate made of silicon.

Abstract: There are provided a method of depositing an aluminum oxide film, a method of forming the same, and a sputtering apparatus, which are capable of depositing an aluminum oxide film that can be crystallized at a low-temperature annealing process. In the method of depositing an aluminum oxide film according to this invention, a target made of aluminum oxide and a substrate W to be processed are disposed inside a vacuum chamber, a rare gas is introduced into the vacuum chamber, and HF power is applied to the target to thereby deposit by sputtering the aluminum oxide film on the surface of the substrate, the pressure in the vacuum chamber during film deposition is set to a range of 1.6 through 2.1 Pa.

Abstract: A multi-layered film includes an electroconductive layer made of platinum (Pt), a seed layer including lanthanum (La), nickel (Ni), and oxygen (O), and a dielectric layer being preferentially oriented in a c-axis direction, which are at least sequentially disposed on a main surface of a substrate made of silicon.

Abstract: A multi-layered film includes a first electroconductive layer, a dielectric layer, and a second electroconductive layer, which are sequentially layered and disposed on a main surface of a substrate. A lower surface of the dielectric layer comes into contact with an upper surface of the first electroconductive layer, an upper surface and an side surface of the dielectric layer is coated with the second electroconductive layer, and an side end of a portion at which the first electroconductive layer directly overlaps the second electroconductive layer is located inside a side end of the substrate on the main surface of the substrate.

Abstract: A method of manufacturing a multi-layered film at least includes: a step A of forming an electroconductive layer on a substrate; a step B of forming a seed layer so as to coat the electroconductive layer; and a step C of forming a dielectric layer so as to coat the seed layer. In the step B, a compound including strontium (Sr), ruthenium (Ru), and oxygen (O) is formed as the seed layer by a sputtering method. In the step C, where a substrate temperature is defined by Td when the dielectric layer is formed, 560° C.?Td?720° C. is determined.

Abstract: The present invention provides a technology for preventing the generation of a pyrochlore phase, which is an impurity phase, in forming a PZT thin film by sputtering, without using a conventional seed layer. The present invention provides a PZT thin film laminate including: a Si substrate 10; a TiOx layer 4 serving as a platinum-adhesion layer on the Si substrate 10; a Pt electrode layer 5 on the TiOx layer 4; a Ti thin film layer 6 on the Pt electrode layer 5; and a PZT thin film layer 7 on the Ti thin film layer 6. The Ti thin film layer 6 can have a thickness of 1 nm or more and 10 nm or less.

Abstract: To provide a carbon electrode film forming method by which the surface roughness and the resistivity can be lowered to a predetermined value or less. A carbon electrode film forming method according to an embodiment of the present invention includes maintaining an argon gas atmosphere of 0.3 Pa to 1.2 Pa inclusive inside a chamber. By applying a power supply having a frequency of 20 kHz to 20 MHz inclusive and a power of 0.1 kW to 2 kW inclusive on a carbon target placed in the chamber, the target is sputtered. Carbon particles are deposited on a substrate placed facing the target.

Abstract: A method of manufacturing a multi-layered film includes: forming an electroconductive layer on a substrate; forming a seed layer including an oxidative product having a perovskite structure so as to coat the electroconductive layer by a sputtering method; and forming a dielectric layer so as to coat the seed layer.

Abstract: To provide a low-cost variable-resistance element and a production method therefor. According to an embodiment of the present invention, there is provided a variable-resistance element 1 including a lower electrode layer 3, an upper electrode layer 5, and an oxide semiconductor layer 4. The upper electrode layer 5 is formed of a carbon material. The oxide semiconductor layer 4 includes a first metal oxide layer 41 and a second metal oxide layer 42. The first metal oxide layer 41 is formed between the lower electrode layer 3 and the upper electrode layer 5 and includes a first resistivity. The second metal oxide layer 42 is formed between the first metal oxide layer 41 and the upper electrode layer 5 and includes a second resistivity different from the first resistivity.

Abstract: An ashing device that prevents the ashing rate from changing over time. The ashing device ashes organic material on a substrate including an exposed metal in a processing chamber. The ashing device includes a path, which is formed in the processing chamber and through which active species supplied to the processing chamber pass. The path is defined by a surface on which the metal scattered from the substrate by the active species is collectible, with the surface being formed so as to expose a metal that is of the same kind.

Abstract: To provide a resistance change device that can be protected from an excess current without enlarging a device size. A resistance change device 1 according to the present embodiment includes a lower electrode layer 3, an upper electrode layer 6, a first metal oxide layer 51, a second metal oxide layer 52, and a current limiting layer 4. The first metal oxide layer 51 is disposed between the lower electrode layer 3 and the upper electrode layer 6, and has a first resistivity. The second metal oxide layer 52 is disposed between the first metal oxide layer 51 and the upper electrode layer 6, and has a second resistivity higher than the first resistivity. The current limiting layer 4 is disposed between the lower electrode layer 3 and the first metal oxide layer 51, and has a third resistivity higher than the first resistivity and lower than the second resistivity.

Abstract: To provide a resistance change element which does not require a forming process and enables reduction of power consumption and miniaturization of the element, and to provide a method for producing it. A resistance change element 1 according to an embodiment of the present invention includes a bottom electrode layer 3, a top electrode layer 5 and an oxide semiconductor layer 4. The oxide semiconductor layer 4 has a first metal oxide layer 41 and a second metal oxide layer 42. The first metal oxide layer 41 is formed between the bottom electrode layer 3 and the top electrode layer 5, and in ohmic contact with the bottom electrode layer 3. The second metal oxide layer 42 is formed between the first metal oxide layer 41 and the top electrode layer 5, and in ohmic contact with the top electrode layer 5.

Abstract: [Object] To provide a method and an apparatus for manufacturing a variable resistance element by which a metal oxide layer having a desired resistivity can be precisely formed. [Solving Means] The method of manufacturing the variable resistance element according to an embodiment of the present invention includes a step of forming a first metal oxide having a first resistivity and a step of forming a second metal oxide having a second resistivity different from the first resistivity. The first metal oxide is formed on a substrate by sputtering, while sputtering a first target made of an oxide of metal, a second target made of the metal with a first power. The second metal oxide layer is formed on the first metal oxide layer by sputtering the second target with a second power different from the first power while sputtering the first target.

Abstract: A thin film manufacturing method and a thin film manufacturing apparatus are provided to manufacture a thin film with good reproducibility. A dummy substrate is conveyed into a chamber, and a dummy processing gas is supplied to the dummy substrate. Moreover, a product substrate is conveyed into the chamber, and a raw material gas different from the dummy processing gas is supplied to the product substrate. The raw material gas contains metal material for manufacturing a thin film with a metal organic chemical vapor deposition (MOCVD) method. Since the raw material gas is not used as a dummy processing gas, the amount of metal material to be used can be minimized in manufacturing the thin film with good reproducibility.