Abstract: An electrode includes an electrode layer including an electrode active material or a raw material of an electrode active material and a bisphenol-based resin, and a current collector supporting the electrode layer. The bisphenol-based resin is obtained by a reaction of (a) a bisphenol-based compound, (b) at least one selected from the group consisting of aminobenzenesulfonic acids and aminobenzenesulfonic acid derivatives, and (c) at least one selected from the group consisting of formaldehyde and formaldehyde derivatives, wherein a content of a structural unit that is obtained by the reaction of the component (a), the component (b) and the component (c) and also has a benzoxazine ring is 15 mass % or less. A production method for the electrode is also disclosed.

Abstract: An electrode includes an electrode layer including an electrode active material or a raw material of an electrode active material and a bisphenol-based resin, and a current collector supporting the electrode layer. The bisphenol-based resin is obtained by a reaction of (a) a bisphenol-based compound, (b) at least one selected from the group consisting of aminobenzenesulfonic acids and aminobenzenesulfonic acid derivatives, and (c) at least one selected from the group consisting of formaldehyde and formaldehyde derivatives, wherein a content of a structural unit that is obtained by the reaction of the component (a), the component (b) and the component (c) and also has a benzoxazine ring is 15 mass % or less. A production method for the electrode is also disclosed.

Abstract: A bisphenol-based resin obtained by a reaction of (a) a bisphenol-based compound, (b) at least one selected from the group consisting of aminobenzenesulfonic acids and aminobenzenesulfonic acid derivatives, and (c) at least one selected from the group consisting of formaldehyde and formaldehyde derivatives, wherein a content of a structural unit that is obtained by the reaction of the component (a), the component (b) and the component (c) and also has a benzoxazine ring is 15 mass % or less.

Abstract: An obtaining unit obtains information about a condition where a vehicle is placed. A detection unit detects at least one of a voice and an action of an occupant of the vehicle. An estimation unit estimates an in-vehicle apparatus to be a controlled target according to the condition where the vehicle is placed. A determination unit determines an in-vehicle apparatus to be a controlled in-vehicle apparatus and determines a control content thereof in consideration of the at least one of a voice and an action. A notification unit notifies the occupant of the in-vehicle apparatus to be controlled and the control content thereof determined by the determination unit. A control unit controls the in-vehicle apparatus according to the determination of the determination unit when receiving a response to the notification of the notification unit from the occupant to permit the control of the in-vehicle apparatus.

Abstract: A semiconductor device according to the present invention includes a semiconductor substrate: a photodiode responsive to a light, which is formed in the semiconductor substrate; at least an interlayer insulating layer formed over the semiconductor substrate, the at least an interlayer insulating layer comprising an upper most insulating layer; at least a conductive wiring layer, comprising an upper most conductive wiring layer formed on the upper most insulating layer; and a first passivation layer formed over the upper-most conductive wiring layer. The upper-most wiring layer is not formed directly above the photodiode. The first passivation layer is made of a permeability-resist material and is not formed directly above the photodiode.

Abstract: An automotive air conditioner includes a storage unit which stores a plurality of pieces of state information as respective learned data; a learning unit which constructs a probabilistic model; a control information correcting unit which corrects setting information, etc., related to a vehicle occupant's setting operation in accordance with a calculated probability so as to achieve a specific setting operation; and an air-conditioning control unit which controls an air-conditioning unit in accordance with the corrected setting information, etc.

Abstract: An obtaining unit obtains information about a condition where a vehicle is placed. A detection unit detects at least one of a voice and an action of an occupant of the vehicle. An estimation unit estimates an in-vehicle apparatus to be a controlled target according to the condition where the vehicle is placed. A determination unit determines an in-vehicle apparatus to be a controlled in-vehicle apparatus and determines a control content thereof in consideration of the at least one of a voice and an action. A notification unit notifies the occupant of the in-vehicle apparatus to be controlled and the control content thereof determined by the determination unit. A control unit controls the in-vehicle apparatus according to the determination of the determination unit when receiving a response to the notification of the notification unit from the occupant to permit the control of the in-vehicle apparatus.

Abstract: When a vehicle deviates from a guide route at a first branch point, the state of the first branch point is memorized. Afterward, when a second branch point becomes a target for a route guide and the state of the second branch point is similar to the memorized state, a user of the vehicle is provided with a guide for preventing deviation from the guide route at the second branch point with a manner of the guide changed. This procedure allows learning of tendency of the user with respect to a state apt to cause the user to mistake a guide route. A guide to help prevent a user from deviating from a guide route at a branch point can be thus performed appropriately.

Abstract: A semiconductor device according to the present invention includes a semiconductor substrate: a photodiode responsive to a light, which is formed in the semiconductor substrate; at least an interlayer insulating layer formed over the semiconductor substrate, the at least an interlayer insulating layer comprising an upper most insulating layer; at least a conductive wiring layer, comprising an upper most conductive wiring layer formed on the upper most insulating layer; and a first passivation layer formed over the upper-most conductive wiring layer. The upper-most wiring layer is not formed directly above the photodiode. The first passivation layer is made of a permeability-resist material and is not formed directly above the photodiode.

Abstract: A notification controller allows a notification apparatus to perform notification in accordance with input of notification request information from a notification information transmitter. The notification controller determines whether or not the notification request information supplied from the notification information transmitter can be disabled from provision in accordance with a user operation. When the information supplied is determined to be disabled from provision in accordance with a user operation, the notification controller prompts a user to determine whether or not to stop the notification. The notification controller disables the notification when confirming that the user issues an instruction to stop the notification.

Abstract: A control apparatus includes a recommended operation determination section, a user interface section, and a control section. The recommended operation determination section uses a first probability model to determine a second operation associated with a first operation having been performed for an onboard device. The user interface section displays the second operation for an occupant and is supplied from the occupant with a response operation indicating whether to accept or reject the second operation. The control section performs the second operation on an onboard device when a response operation to accept the second operation is supplied via the user interface section.

Abstract: A method for fabricating a semiconductor element on a semiconductor substrate having a support substrate and a semiconductor layer above the support substrate. The method includes preparing the semiconductor substrate having a transistor formation region and an element isolation region both defined thereon; forming a pad oxide film on the semiconductor layer of the semiconductor substrate; forming an oxidation-resistant mask layer on the pad oxide film; forming a resist mask to cover the transistor formation region on the oxidation-resistant mask layer; performing a first etching process for etching the oxidation-resistant mask layer using the resist mask as a mask to expose the pad oxide film of the element isolation region; and removing the resist mask and oxidizing the semiconductor layer below the exposed pad oxide film by LOCOS using the exposed oxidation-resistant mask layer as a mask to form an element isolation layer.

Abstract: A route length calculation apparatus comprises: a location detection unit for acquiring current location of a mobile object; an event detection unit for detecting the occurrence of an applicable event; a route history information storage unit for storing, upon occurrence of a first event, past route information containing at least the point of occurrence of the first event; and a distance calculation unit for calculating, when occurrence of a second event is detected by the event detection unit, the shortest route length between the point of occurrence of the second event acquired by the location detection unit and the point of occurrence of the first event along a route that the mobile object has traveled before.

Abstract: An automotive air conditioner includes a storage unit which stores a plurality of pieces of state information as respective learned data; a learning unit which constructs a probabilistic model; a control information correcting unit which corrects setting information, etc., related to a vehicle occupant's setting operation in accordance with a calculated probability so as to achieve a specific setting operation; and an air-conditioning control unit which controls an air-conditioning unit in accordance with the corrected setting information, etc.

Abstract: A method for manufacturing a semiconductor device includes the steps of preparing a semiconductor substrate, forming a lower electrode having a laminated film of Ir and IrO2 whose thickness is 100 nm or less over the semiconductor substrate, forming a capacity insulating film comprised of a metal oxide dielectric on the lower electrode, and forming an upper electrode comprised of a precious metal film on the capacity insulating film.

Abstract: A notification controller allows a notification apparatus to perform notification in accordance with input of notification request information from a notification information transmitter. The notification controller determines whether or not the notification request information supplied from the notification information transmitter can be disabled from provision in accordance with a user operation. When the information supplied is determined to be disabled from provision in accordance with a user operation, the notification controller prompts a user to determine whether or not to stop the notification. The notification controller disables the notification when confirming that the user issues an instruction to stop the notification.

Abstract: A method for manufacturing a semiconductor element includes preparing an SOI layer having a transistor forming area and an element isolation area, forming an oxidation-resistant mask layer on the SOI layer, forming a resist mask over the transistor forming area on the oxidation-resistant mask layer, a first etching that etches the oxidation-resistant mask layer using the resist mask so that a predetermined thickness of the oxidation-resistant mask layer remains, a second etching that etches the remaining oxidation-resistant mask layer, using the resist mask and exposing the SOI layer at the element isolation area, and oxidizing the exposed SOI layer using the remaining oxidation-resistant mask layer, to form an element isolation layer. An etching rate during the first etching is higher than during the second etching and a silicon-to-etching selection ratio during the second etching is higher than during the first etching.

Abstract: When a vehicle deviates from a guide route at a first branch point, the state of the first branch point is memorized. Afterward, when a second branch point becomes a target for a route guide and the state of the second branch point is similar to the memorized state, a user of the vehicle is provided with a guide for preventing deviation from the guide route at the second branch point with a manner of the guide changed. This procedure allows learning of tendency of the user with respect to a state apt to cause the user to mistake a guide route. A guide to help prevent a user from deviating from a guide route at a branch point can be thus performed appropriately.

Abstract: A method for fabricating a semiconductor element on a semiconductor substrate having a support substrate and a semiconductor layer above the support substrate. The method includes the steps of: preparing the semiconductor substrate having a transistor formation region and an element isolation region both defined thereon; forming a pad oxide film on the semiconductor layer of the semiconductor substrate; forming an oxidation-resistant mask layer on the pad oxide film; forming a resist mask to cover the transistor formation region on the oxidation-resistant mask layer; performing a first etching process for etching the oxidation-resistant mask layer using the resist mask as a mask to expose the pad oxide film of the element isolation region; and removing the resist mask and oxidizing the semiconductor layer below the exposed pad oxide film by LOCOS using the exposed oxidation-resistant mask layer as a mask to form an element isolation layer.

Abstract: A method for manufacturing a semiconductor device includes the steps of preparing a semiconductor substrate, forming a lower electrode having a laminated film of Ir and IrO2 whose thickness is 100 nm or less over the semiconductor substrate, forming a capacity insulating film comprised of a metal oxide dielectric on the lower electrode, and forming an upper electrode comprised of a precious metal film on the capacity insulating film.