Abstract: A method for manufacturing a semiconductor element comprised of an SOI structure including an SOI layer comprises the steps of preparing the SOI layer having a transistor forming area and an element isolation area on a surface thereof, forming an oxidation-resistant mask layer on the surface of the SOI layer, forming a resist mask in an area corresponding to the trnasistor forming area on the oxidation-resistant mask layer, a first etching step for etching the oxidation-resistant mask layer using the resist mask in such a manner that the oxidation-resistant mask layer remains by a predetermined thickness, a second etching step for etching the oxidation-resistant mask layer allowed to remain by the predetermined thickness in accordance with the first etching step, using the resist mask and exposing the SOI layer of a portion corresponding to the element isolation area, and oxidizing the exposed SOI layer by a LOCOS method using the oxidation-resistant mask layer allowed to remain in accordance with the second

Abstract: The present invention provides a ferroelectric capacitor structure comprising a ferroelectric capacitor which is constituted in such a manner that a lower electrode is formed, a ferroelectric film is formed on the lower electrode and an upper electrode is formed on the ferroelectric film, and which is formed in a predetermined pattern; a hydrogen diffusion barrier film formed on the ferroelectric capacitor; an interlayer insulating film formed on the hydrogen diffusion barrier film; and a contact hole for connecting the upper electrode and an upper metal wiring layer. In the ferroelectric capacitor structure, etching of the interlayer insulating film is performed using a gas containing a fluorine element, and etching of the hydrogen diffusion barrier film is carried out using a mixed gas of at least a gas containing a reductive group and a halogen gas, or a halogen gas having a reductive group as a constituent substance.

Abstract: An abnormality detection device includes small motion sensors that detect small motions of a person in a house; a data collecting unit that collects and stores sensor signals from the small motion sensors as sensor patterns, and a Markov chain operating unit 33 that transforms the sensor patterns into a cluster sequence by vector-quantizing input patterns which are obtained by averaging and normalizing the sensor patterns, and calculates a transition number matrix and a duration time distribution of a Markov and so on using a Markov chain model. The abnormality detection device also includes a comparing unit that calculates a characteristic amount (Euclid distance and average log likelihood in an appearance frequency of a Markov chain and an average log likelihood to the duration time distribution of a Markov chain) of a sample activity as against a daily activity based on the obtained transition number matrix and the duration time distribution and so on.

Abstract: An antifungal and/or antimycotic external preparation for nail, which comprises neticonazole or a salt thereof and a basic substance.

Abstract: The present invention aims to provide a method of manufacturing a semiconductor device having an SOI structure, which is capable of setting an etching process so as to cause contact etching to widely have a process margin even in a semiconductor elemental device using an extra-thin SOI layer. The present method is a method of manufacturing a fully depleted-SOI device. A cobalt layer is formed on an SOI layer. Cobalt is transformed into a cobalt silicide layer by heat treatment. An interlayer insulating film is formed on the cobalt silicide layer, and a contact hole is defined in the interlayer insulating film by dry etching. As an etching gas used in such a dry etching step, a CHF3/CO gas is used. An etching condition is set through the use of a dry etching rate held substantially constant by use of the etching gas. Described specifically, etching time is suitable set.

Abstract: The present invention aims to provide a method of manufacturing a semiconductor device having an SOI structure, which is capable of setting an etching process so as to cause contact etching to widely have a process margin even in a semiconductor elemental device using an extra-thin SOI layer. The present method is a method of manufacturing a fully depleted-SOI device. A cobalt layer is formed on an SOI layer. Cobalt is transformed into a cobalt silicide layer by heat treatment. An interlayer insulating film is formed on the cobalt silicide layer, and a contact hole is defined in the interlayer insulating film by dry etching. As an etching gas used in such a dry etching step, a CHF3/CO gas is used. An etching condition is set through the use of a dry etching rate held substantially constant by use of the etching gas. Described specifically, etching time is suitable set.

Abstract: An abnormality detection device 30 includes small motion sensors 25a˜25c that detect small motions of a person in a house, a data collecting unit 32 that collects and stores sensor signals from the small motion sensors 25a˜25c as sensor patterns, a Markov chain operating unit 33 that transforms the sensor patterns into a cluster sequence by vector-quantizing input patterns which are obtained by averaging and normalizing the sensor patterns and calculates a transition number matrix and a duration time distribution of a Markov chain and so on using a Markov chain model, a comparing unit 34 that calculates characteristic amount (Euclid distance and average log likelihood in appearance frequency of a Markov chain and average log likelihood to the duration time distribution of a Markov chain) of a sample activity as against a daily activity based on the obtained transition number matrix and the duration time distribution and so on, and others.