Abstract: A second communications server obtains adjustment information of an adjustment unit in an exposure apparatus and information related to image forming quality (such as wavefront aberration) of a projection optical system under an exposure condition that serves as a reference, via a first communications server, and then calculates an optimal adjustment amount of the adjustment unit under a target exposure condition based on the information. In addition, the second communications server obtains adjustment information of the adjustment and actual measurement data of image forming quality of the projection optical system via the first communications server, and then calculates the optimal adjustment amount of the adjustment unit under the target exposure condition based on the information. And, the second communications server controls the adjustment unit in the exposure apparatus via the first communications server, based on the calculations results.

Abstract: A second communications server obtains adjustment information of an adjustment unit in an exposure apparatus and information related to image forming quality (such as wavefront aberration) of a projection optical system under an exposure condition that serves as a reference, via a first communications server, and then calculates an optimal adjustment amount of the adjustment unit under a target exposure condition based on the information. In addition, the second communications server obtains adjustment information of the adjustment and actual measurement data of image forming quality of the projection optical system via the first communications server, and then calculates the optimal adjustment amount of the adjustment unit under the target exposure condition based on the information. And, the second communications server controls the adjustment unit in the exposure apparatus via the first communications server, based on the calculations results.

Abstract: A carrier composition, including a particulate magnetic material; and a layer located on a surface of the particulate magnetic material, wherein the layer is formed by heating a mixture containing a metal alkoxide; a resin having a hydroxyl group reacting with the metal alkoxide; and a particulate inorganic material.

Abstract: The present invention realizes a heterobipolar transistor using a SiGeC base layer in order to improve its electric characteristics. Specifically, the distribution of carbon and boron within the base layer is controlled so that the concentration of boron is higher than the concentration of carbon on the side bordering on the emitter layer, and upon the formation of the emitter layer, both boron and carbon are dispersed into a portion of the emitter layer that comes into contact with the base layer.

Abstract: An exposure apparatus includes a projection optical system, which projects a pattern of a mask onto a prescribed exposure area on a substrate at a prescribed projection magnification. The optical axis center of the projection optical system is set to a position different from that of the center of the projection area onto which the pattern is projected. The exposure apparatus further includes a magnification modification device, which modifies the projection magnification of the projection optical system; a calculation device, which calculates a shift length of the center of the projection area associated with modification of the projection magnification; and a correction device, which corrects the position information of the exposure area based on the shift length of the center of the projection area.

Abstract: A semiconductor device having a self-aligned contact hole is formed by providing a side wall oxide film on a gate electrode, covering the gate electrode and the side wall oxide film by an oxide film and further covering the oxide film by a nitride film, wherein the oxide film is formed by a plasma CVD process with a reduced plasma power such that the H2O content in the oxide film is less than about 2.4 wt %.

Abstract: A carrier for a double component developer for developing latent electrostatic images at least contains a particulate core material having a weight average particle diameter (Dw) of from 25 to 45 ?m and a magnetic moment of from 65 to 90 Am2/Kg at 1 KOe and a resin layer located on the surface of the particulate core material. Further, the carrier has a breakdown voltage not less than 1,000 V.

Abstract: A second communications server obtains adjustment information of an adjustment unit in an exposure apparatus and information related to image forming quality (such as wavefront aberration) of a projection optical system under an exposure condition that serves as a reference, via a first communications server, and then calculates an optimal adjustment amount of the adjustment unit under a target exposure condition based on the information. In addition, the second communications server obtains adjustment information of the adjustment and actual measurement data of image forming quality of the projection optical system via the first communications server, and then calculates the optimal adjustment amount of the adjustment unit under the target exposure condition based on the information. And, the second communications server controls the adjustment unit in the exposure apparatus via the first communications server, based on the calculations results.

Abstract: A second communications server obtains adjustment information of an adjustment unit in an exposure apparatus and information related to image forming quality (such as wavefront aberration) of a projection optical system under an exposure condition that serves as a reference, via a first communications server, and then calculates an optimal adjustment amount of the adjustment unit under a target exposure condition based on the information. In addition, the second communications server obtains adjustment information of the adjustment and actual measurement data of image forming quality of the projection optical system via the first communications server, and then calculates the optimal adjustment amount of the adjustment unit under the target exposure condition based on the information. And, the second communications server controls the adjustment unit in the exposure apparatus via the first communications server, based on the calculations results.

Abstract: The present invention realizes a heterobipolar transistor using a SiGeC base layer in order to improve its electric characteristics. Specifically, the distribution of carbon and boron within the base layer is controlled so that the concentration of boron is higher than the concentration of carbon on the side bordering on the emitter layer, and upon the formation of the emitter layer, both boron and carbon are dispersed into a portion of the emitter layer that comes into contact with the base layer.

Abstract: A carrier for electrostatic development contains a core particle and a coating layer covering the core particle, and the core particle is a ferrite particle containing at least one of Zr in an amount of 0.005% by mass to 5% by mass and Bi in an amount of 0.001% by mass to 1% by mass. The carrier shows a sufficient resistance, is stably charged over a long period of time, can avoid roughness and irregular density in halftone images, prevents deposition of the carrier particles on a photoconductor, can satisfactorily reproduce character images and can produce high-quality images over a long period of time. The carrier is usable for constituting a developer, a container housing the developer, an image forming apparatus and process, and process cartridge using the developer.

Abstract: An improved developing device for developing latent images to toner images is provided for stabilizing the amount of the developer on the developing bearing member, in which the amount of toner particles consumed in one second for the development process “a” (mg/sec) and circumferential velocity of the surface of the developer bearing member “b” (m/sec) are arranged to satisfy the following relationships (1) and (2) at the condition in which the amount of the developer after 20 hours of rotation of the developer bearing member exceeds the amount of the developer before rotation: 45 mg/m<a/b??(1) a/b<110 mg/m??(2).

Abstract: A semiconductor device having a self-aligned contact hole is formed by providing a side wall oxide film on a gate electrode, covering the gate electrode and the side wall oxide film by an oxide film and further covering the oxide film by a nitride film, wherein the oxide film is formed by a plasma CVD process with a reduced plasma power such that the H2O content in the oxide film is less than about 2.4 wt %.

Abstract: An exposure method of forming pattern on object via projection optical system, including deciding optimal adjustment amount of adjustment device which adjusts image forming property of the projection optical system to optimize the image forming property under pattern to be formed and exposure condition of the pattern, based on information related to wavefront aberration of the projection optical system, Zernike Sensitivity Chart corresponding to the pattern and the exposure condition, wavefront aberration variation table that denotes relation between adjustment amount of the adjustment device and change in coefficients of terms in the Zernike polynomial, and restraint condition with respect to the adjustment amount of the adjustment device, and exposing the pattern on the object under the exposure condition via the projection optical system of which the image forming property is adjusted by the adjustment device based on the decided optimal adjustment amount.

Abstract: The object of the present invention is to provide a carrier for electrophotography which includes a core material and a coating layer comprising particles on a surface of the core material, in which the carrier for electrophotography comprises indium (In) in an amount of 0.0001% by mass to 0.5% by mass. The present invention also provides a developer using the carrier, a developer container, an image forming method, an image forming apparatus, and a process cartridge in each of which the carrier is used.

Abstract: A carrier for electrostatic development contains a core particle and a coating layer covering the core particle, and the core particle is a ferrite particle containing at least one of Zr in an amount of 0.005% by mass to 5% by mass and Bi in an amount of 0.001% by mass to 1% by mass. The carrier shows a sufficient resistance, is stably charged over a long period of time, can avoid roughness and irregular density in halftone images, prevents deposition of the carrier particles on a photoconductor, can satisfactorily reproduce character images and can produce high-quality images over a long period of time. The carrier is usable for constituting a developer, a container housing the developer, an image forming apparatus and process, and process cartridge using the developer.

Abstract: A carrier contains a core material; and a coated film containing a binder resin, and a particulate material, the coated film covering the core material, wherein a ratio (D/h) of an average particle diameter (D) of the particulate material to an average thickness (h) of the coated film is from 0.01 to 1, and wherein the carrier has concavities and convexities on the surface of the carrier, the concavities and convexities having a difference of elevation of from 0.05 to 2.0 ?m.

Abstract: The present invention is an adjustment method for a projection optical system which allows measuring the relationship (dependency) of the fluctuation amount of the image formation characteristics of the projection optical system with respect to the change of the installation environment (e.g. barometric pressure) around the projection optical system substantially, without actually changing the installation environment. The illumination light (IL) from the exposure light source (1) illuminates the reticle (9) via the fly eye lenses (2, 4) and the capacitor lens (8) etc., and the pattern image on the reticle (9) is projected onto the wafer (12) via the projection optical system (11) under the illumination light (IL).

Abstract: A carrier for electrostatic development contains a core particle and a coating layer covering the core particle, and the core particle is a ferrite particle containing at least one of Zr in an amount of 0.005% by mass to 5% by mass and Bi in an amount of 0.001% by mass to 1% by mass. The carrier shows a sufficient resistance, is stably charged over a long period of time, can avoid roughness and irregular density in halftone images, prevents deposition of the carrier particles on a photoconductor, can satisfactorily reproduce character images and can produce high-quality images over a long period of time. The carrier is usable for constituting a developer, a container housing the developer, an image forming apparatus and process, and process cartridge using the developer.

Abstract: The present invention realizes a heterobipolar transistor using a SiGeC base layer in order to improve its electric characteristics. Specifically, the distribution of carbon and boron within the base layer is controlled so that the concentration of boron is higher than the concentration of carbon on the side bordering on the emitter layer, and upon the formation of the emitter layer, both boron and carbon are dispersed into a portion of the emitter layer that comes into contact with the base layer.