Abstract: An electromagnetic clutch includes a field member having a hollow in a center thereof and carrying a field coil in the form of a ring, a shaft rotatably placed in the hollow of the field member, a rotor member fixedly attached on the shaft, the rotor member being arranged on one side of the field member, a driving member rotatably mounted on the shaft, the driving member being arranged on one side of the rotor member, and an armature member attached to the driving member, the armature member being arranged between the rotor member and the driving member and bendable toward the rotor member.

Abstract: A method is presented to manufacture substrates for growing monocrystalline diamond films by chemical vapor deposition (CVD) on large area at low cost. The substrate materials are either Pt or its alloys, which have been subject to a single or multiple cycle of cleaning, roller press, and high temperature annealing processes to make the thickness of the substrate materials to 0.5 mm or less, or most preferably to 0.2 mm or less, so that either (111) crystal surfaces or inclined crystal surfaces with angular deviations within .+-.10 degrees from (111), or both, appear on the entire surfaces or at least part of the surfaces of the substrates. The annealing is carried out at a temperature above 800.degree. C. The present invention will make it possible to markedly improve various characteristics of diamond films, and hence put them into practical use.

Abstract: Disclosed is planar and vertical cold cathode emitter elements including an semiconducting diamond emitter portion having a high thermal resistance and a high breakdown voltage, thereby suppressing the deterioration of the electron emission characteristics and enabling the operation with a high electric power.

Abstract: Disclosed is a diamond film field effect transistor incorporating a p-type semiconducting diamond layer of a specific thickness and B-doping concentration, which has a sufficiently large modulation of the gate voltage dependent current flowing between the source electrode and the drain electrode and whose transistor characteristics are not deteriorated even if adsorption of moisture occurs. Specifically, the diamond film field effect transistor includes; an active layer formed of a p-type semiconducting diamond wherein the concentration of a p-type impurity in the range between 10.sup.17 /cm.sup.3 and 10.sup.20 /cm.sup.3 and the film thickness is 0.14 .mu.m or less; and a gate electrode formed on the p-type semiconducting diamond active layer through an insulating layer.

Abstract: The highly-oriented diamond film is a diamond film formed by chemical vapor deposition, with at least 95% of its area consisting of either (100) or (111) crystal planes, and the differences {.DELTA..alpha., .DELTA..beta., .DELTA..gamma.} of the Euler angles {.alpha., .beta., .gamma.} between the adjacent crystals satisfying (.vertline..DELTA..alpha..vertline..ltoreq.1.degree., .vertline..DELTA..beta..vertline..ltoreq.1.degree. and .vertline..DELTA..gamma..vertline..ltoreq.1.degree.) simultaneously. Thus obtained highly-oriented diamond film has few grain boundaries and high carrier mobility. And the area of the diamond film can be large.

Abstract: A diamond film field effect transistor, excellent in characteristics and a method of manufacturing the transistor, in which a contact resistance between electrodes and respective source and drain region is small. The transistor has a channel layer of a p-layer made of semiconducting diamond, an i-layer made of high resistance diamond as a gate insulating layer, which is formed on the channel layer, a gate electrode film formed on the i-layer and a source region and a drain region formed on the surface of the i-layer in self-alignment to the gate electrode film by ion implantation using the gate electrode film, side walls and a protective film as masks.

Abstract: A method of forming a highly oriented diamond film having a reduced thickness with a high quality at a low cost. Surface of a single crystal substrate is cleaned, and is then left in a high vacuum of 10.sup.-6 Torr or less at a temperature between room temperature and 800.degree. C. for 15 min for releasing gas molecules absorbed on the surface of the substrate. The surface of the substrate is then processed using carbon-containing plasma for forming a barrier of obstructing a carbon component within the substrate. After that, an electric field is applied across the substrate and plasma for allowing a current to flow thereacross for a specified time, to form nuclei of diamond for synthesis of a diamond film. Thus, highly oriented diamond particles or films, in which crystal orientations thereof are epitaxial to the substrate, are synthesized.

Abstract: A method for forming diamond films by vapor phase synthesis comprising a process of forming the diamond films on a substrate by direct current discharge plasma, in an atmosphere of a reaction gas including a gas containing at least carbon and hydrogen, or in an atmosphere of a mixed gas containing at least a carbon-containing gas and a hydrogen gas, at a gas pressure between 0.1 and 5 Torr and a substrate temperature between 300.degree. and 1000.degree. C.

Abstract: A diamond Schottky diode including an electrically conductive substrate, a multi-layer structure of a semiconducting diamond layer and an insulating diamond layer, and a metal electrode. This diode has a greater potential barrier under a reversed bias and hence exhibits better rectifying characteristics with a smaller reverse current.

Abstract: A is a heat-resisting ohmic electrode on diamond film, including: a p-type semiconducting diamond film; a boron-doped diamond layer provided on the semiconducting diamond film; and an electrode element made of p-type Si selectively formed on the boron-doped diamond layer; wherein the boron concentration in the boron-doped diamond layer is from 1.0.times.10.sup.19 to 1.8.times.10.sup.23 cm.sup.-3, and at least one impurity selected from the group consisting of B, Al and Ga is doped in the electrode element with a concentration from 1.0.times.10.sup.20 to 5.0.times.10.sup.22 cm.sup.-3. The ohmic electrode on diamond film is applicable for electronic devices operative at high temperature.

Abstract: Disclosed herein is a diamond Schottky gate type field effect transistor (FET) comprising: an insulating diamond under layer; a doped semiconducting diamond layer as an active layer, which has electrode areas formed by ion implantation such that the interface level is formed near the surface thereof; an insulating diamond layer formed on a portion of the semiconducting diamond layer; a source electrode made of a degenerate diamond film provided in one of the electrode areas of the semiconducting diamond layer, to form an ohmic contact between the same and the semiconducting diamond layer; a drain electrode made of a degenerate diamond film provided in the other of the electrode areas of the semiconducting diamond layer, to form an ohmic contact between the same and the semiconducting diamond layer; and a gate electrode made of a degenerate diamond film formed on the insulating diamond layer, to form a Schottky junction between the same and the semiconducting diamond layer through the diamond insulating layer.

Abstract: A diamond heterojunction diode having an improved rectifying characteristics with a small reverse current and a large forward current. Three layers are formed on a low-resistance p-type silicon substrate by the microwave plasma CVD in the order of a B-doped p type semiconducting diamond layer, an insulating undoped diamond layer (thinner than 1 .mu.m), and an n-type semiconducting silicon layer. Ohmic electrodes are formed on the front side of a n-type semiconducting silicon layer and the back side of a substrate. Under a forward bias, the electric field is applied to the intermediate insulating layer to accelerate the transport of holes and electrons. Under a reversed bias, the energy band has a notch as well as a potential barrier due to the intermediate layer thus preventing holes from transporting from the n-type semiconducting diamond layer to the p-type semiconducting diamond layer, resulting in the improved rectifying characteristics.

Abstract: An electromagnetically controlled spring clutch mechanism including a rotating output member, a rotating input member, an armature assembly, an electromagnetic coil assembly and a coil spring. The coil spring is fitted astride both the output boss of the rotating output member and the input boss of the rotating input member. One end of the coil spring is anchored at the rotating input member, and the other is anchored to the armature assembly. The rotor of the rotating output member, the armature assembly, and the electromagnetic coil assembly are arranged in this sequence in the axial direction. The electromagnetic coil of the electromagnetic coil assembly is positioned radially outwardly of the coil spring. The electromagnetic coil assembly includes a casing, and this casing covers the rotor of the rotating output member, the armature assembly, the electromagnetic coil of the electromagnetic coil assembly and the coil spring.

Abstract: An electromagnetically controlled spring clutch mechanism includes a rotating output member, a rotating input member, a coil spring fitted astride the outer peripheral portions of these two members, an armature assembly disposed on the outer peripheral portion of the coil spring, and an electromagnetic coil assembly. When the electromagnetic coil is deenergized, the coil spring contracts in a tightening direction so that the output and input members are drivingly coupled together. When the electromagnetic coil is energized, rotation of the armature assembly is hampered, and the coil spring expands so that the output and input members are decoupled.

Abstract: A plasma reactor for diamond synthesis includes a microwave generator, a waveguide connected to the microwave generator, an antenna disposed within the waveguide to direct the microwaves propagated along the waveguide toward the interior of a reaction chamber, a microwave window provided above the upper wall of the waveguide, a reaction chamber defined by (a) a cylindrical bottom member hermetically joined to the microwave window and the waveguide, (b) a reaction gas inlet port and a gas outlet port in the side wall thereof, and (c) a substrate holder disposed within the reaction chamber in facing opposition to the microwave window so as to be moved toward and away from the microwave window to adjust the distance between the microwave window and the substrate holder to generate a desired microwave resonance mode.

Abstract: An electromagnetically controlled spring clutch mechanism for transmitting the rotating forces of an input rotating element adapted to rotate in a predetermined direction and in a direction opposite thereto to an output rotating element. According to one aspect, a first spring clutch mechanism and a second spring clutch mechanism are interposed between the input rotating element and the output rotating element, and the rotating force of the input rotating element in the predetermined direction is transmitted to the output rotating element by the contraction of a coil spring in the first spring clutch mechanism and the rotating force of the input rotating element in the opposite direction is transmitted to the output rotating element by the contraction of a coil spring in the second spring clutch mechanism.

Abstract: An apparatus for detecting position/variance of input light is disclosed which includes a photoelectric conversion device receiving input light constituted of a first resistive layer formed of a first photoelectric conversion material and a second resistive layer formed of a second photoelectric conversion material connected with the first resistive layer through a depletion layer or directly, wherein the first resistive layer is provided with uniform resistivity throughout its surface so that a linear output proportional to the average of the distances between one end of the photoelectric conversion device and positions of the input light is detected and the second resistive layer is provided with resistivity dependent upon the distance from its one end so that a quandratic ouput proportional to the average of the squares of the distances between one end of the photoelectric conversion device and positions of the input light is detected.

Abstract: An electromagnetically controlled spring clutch mechanism comprising a first boss member rotatable as a unit with an input rotating element, a second boss member rotatable as a unit with an output rotating element, a coil spring fitted over and across the first and second boss members, a rotation control member for hampering contraction of the coil spring, a movable member, a magnet for biasing the movable member magnetically toward the rotation control member, and an electromagnet for magnetically attracting the movable member away from the rotation control member. When the electromagnet is energized, the movable member moves away from the rotation control member to permit contraction of the coil spring member, and the contraction of the coil spring effects a driving connection between the first and second boss members.

Abstract: An electromagnetically controlled spring clutch mechanism for transmitting the rotating forces of an input rotating element adapted to rotate in a predetermined direction and in a direction opposite thereto to an output rotating element. According to one aspect, a first spring clutch mechanism and a second spring clutch mechanism are interposed between the input rotating element and the output rotating element, and the rotating force of the input rotating element in the predetermined direction is transmitted to the output rotating element by the contraction of a coil spring in the first spring clutch mechanism and the rotating force of the input rotating element in the opposite direction is transmitted to the output rotating element by the contraction of a coil spring in the second spring clutch mechanism.

Abstract: An electromagnetically controlled spring clutch mechanism comprising an output rotating element, an input rotating element, a first boss member rotating as a unit with the input rotating element, a second boss member rotating as a unit with the output rotating element, a coil spring means fitted over and across the first and second boss members, a rotation control member for hampering the contraction of the coil spring, a movably mounted armature, a biasing device for biasing the armature toward the rotation control member, and an electromagnetic device for magnetically attracting the armature. When the electromagnetic device is deenergized, the armature acts on the rotation control member by the action of the biasing device whereby the contraction of the coil spring is hampered. When the electromagnetic device is energized, the armature is moved away from the rotation control member by the magnetic attracting force of the electromagnetic device whereby the coil spring is contracted.