Abstract: Provided is a ferrite particle powder for electromagnetic wave absorption that can maintain flexibility and uniformity of physical properties of a sheet even when the sheet is highly filled with the ferrite particle powder and is excellent in electromagnetic wave absorbing performance in a GHz band. The ferrite particle powder is a ferrite particle powder for electromagnetic wave absorption, the ferrite particle powder containing magnetoplumbite-type ferrite represented by a chemical formula of AxFe(12-y)(TizMn(1-z))yO19, where A is at least one selected from Ba, Sr, Ca, and Pb, x is 0.9 to 1.1, y is 5.0 or less, and z is 0.35 to 0.65, and the ferrite particle powder having: a compressed density of 3.00 g/cm3 or more; and an average particle diameter of 0.50 to 3.0 ?m determined by an air permeability method (Blaine method).

Abstract: A method for producing a cell population containing cardiomyocytes, including (1) a step of bringing a histone deacetylase inhibitor into contact with a cell population containing cardiomyocytes and cells other than cardiomyocytes, the cell population being obtained by culturing pluripotent stem cells in a medium for cardiomyocyte differentiation, and (2) a step of culturing the cell population is provided by the present invention.

Abstract: A method for producing a cell population containing cardiomyocytes, including (1) a step of bringing a receptor-type tyrosine kinase inhibitor (excluding EGF receptor inhibitors) into contact with a cell population containing cardiomyocytes or cardiac progenitor cells, and other cells, the cell population being obtained by culturing pluripotent stem cells in a medium for cardiomyocyte differentiation, and (2) a step of culturing the cell population is provided by the present invention.

Abstract: A secondary battery includes a case composed of a metal containing aluminum as a main component, a stacked electrode assembly arranged in the case, a negative electrode current collector electrically connecting negative electrodes of the stacked electrode assembly to a negative electrode terminal, a positive electrode current collector electrically connecting positive electrodes of the stacked electrode assembly to a positive electrode terminal, a first metal plate arranged between the case and the stacked electrode assembly, and a spacer arranged between the case and the first metal plate, the spacer being composed of an insulating material. The positive electrodes are electrically connected to the case or a second metal plate arranged on the first metal plate with an insulating member provided between the first metal plate and the insulating member.

Abstract: A nonaqueous electrolyte secondary battery includes: a positive electrode 4 including a positive electrode current collector and a positive electrode mixture layer containing a positive electrode active material and a binder, the positive electrode mixture layer being provided on the positive electrode current collector; a negative electrode 5; a porous insulating layer 6 interposed between the positive electrode 4 and the negative electrode 5; and a nonaqueous electrolyte. The positive electrode 4 has a tensile extension percentage of equal to or higher than 3.0%. The positive electrode current collector is made of aluminum containing iron. In this manner, the tensile extension percentage of the positive electrode is increased without a decrease in capacity of the nonaqueous electrolyte secondary battery. Accordingly, even when the nonaqueous electrolyte secondary battery is destroyed by crush, occurrence of short-circuit in the nonaqueous electrolyte secondary battery can be suppressed.

Abstract: A secondary battery includes a case composed of a metal containing aluminum as a main component, a stacked electrode assembly arranged in the case, a negative electrode current collector electrically connecting negative electrodes of the stacked electrode assembly to a negative electrode terminal, a positive electrode current collector electrically connecting positive electrodes of the stacked electrode assembly to a positive electrode terminal, a first metal plate arranged between the case and the stacked electrode assembly, and a spacer arranged between the case and the first metal plate, the spacer being composed of an insulating material. The positive electrodes are electrically connected to the case or a second metal plate arranged on the first metal plate with an insulating member provided between the first metal plate and the insulating member.

Abstract: Disclosed is a positive electrode for a non-aqueous electrolyte secondary battery, including a current collector and a mixture layer attached thereto. The mixture layer includes an active material including particles of a first active material, i.e., a lithium-manganese composite oxide, and particles of a second active material, i.e., a lithium-nickel composite oxide. A proportion of the first active material particles in the active material is 51 vol % to 90 vol %. A volume-based particle size distribution of the first active material particles has a first peak on a larger particle side and a second peak on a smaller particle side. A first particle size D1 corresponding to the first peak is 2.5 to 5 times larger than a second particle size D2 corresponding to the second peak. A volume-based particle size distribution of the second active material particles has a third peak corresponding to a third particle size D3 satisfying D1>D3>D2.

Abstract: The present invention provides an infrared reflecting black pigment comprising no harmful elements such as Cr6+ and the like, which exhibits excellent infrared reflecting properties and acid resistance. The present invention relates to an infrared reflecting black pigment that comprises a composite oxide comprising Cu and Zn or a composite oxide comprising Cu, Zn and Al, and has a blackness (L* value) of not more than 29 and a near infrared reflectance of not less than 40%, as well as a paint and a resin composition using the infrared reflecting black pigment.

Abstract: A semiconductor device includes grooves defining an active region, including a MISFET, and dummy regions. A first interlayer insulation film is formed over the MISFET, the active region and the dummy regions. A first wiring, and first and second dummy wirings are formed over the first interlayer insulation film. A second interlayer insulation film is formed over the first wiring and the dummy wirings. The second dummy wirings are arranged between the first wiring and the first dummy wirings, and the pitch of the first dummy wirings is larger than that of the second dummy wirings. In planar view, the first and second dummy wirings are arranged over the dummy regions, and the size of each of the first dummy wirings is larger than size of each of the second dummy wirings. The first wiring and the first and second dummy wirings are formed of copper as a major component.

Abstract: A negative electrode plate according to an embodiment of the present disclosure includes a negative electrode collector and a negative electrode mixture layer disposed on the negative electrode collector. The negative electrode mixture layer contains a negative active material, a first binding material having a Tg of 10° C. to 60° C., and a second binding material having a Tg of 0° C. or less. When the negative electrode mixture layer is divided into two equal parts at the center in the thickness direction, a negative electrode mixture layer (a) is one half on the negative electrode collector side of the negative electrode mixture layer and contains the first binding material, and a negative electrode mixture layer (b) is the other half on the surface side of the negative electrode mixture layer and contains the second binding material. A and B satisfy a relationship: 0.04?B/(A+B)<0.

Abstract: A semiconductor device includes grooves defining an active region, including a MISFET, and dummy regions. A first interlayer insulation film is formed over the MISFET, the active region and the dummy regions. A first wiring, and first and second dummy wirings are formed over the first interlayer insulation film. A second interlayer insulation film is formed over the first wiring and the dummy wirings. The second dummy wirings are arranged between the first wiring and the first dummy wirings, and the pitch of the first dummy wirings is larger than that of the second dummy wirings. In planar view, the first and second dummy wirings are arranged over the dummy regions, and the size of each of the first dummy wirings is larger than size of each of the second dummy wirings. The first wiring and the first and second dummy wirings are formed of copper as a major component.

Abstract: There is provided a technique for improving the flatness at the surface of members embedded in a plurality of recesses without resulting in an increase in the time required for the manufacturing processes. According to this technique, the dummy patterns can be placed up to the area near the boundary BL between the element forming region DA and dummy region FA by placing the first dummy pattern DP1 of relatively wider area and the second dummy pattern DP2 of relatively small area in the dummy region FA. Thereby, the flatness of the surface of the silicon oxide film embedded within the isolation groove can be improved over the entire part of the dummy region FA. Moreover, an increase of the mask data can be controlled when the first dummy patterns DP1 occupy a relatively wide region among the dummy region FA.

Abstract: Disclosed is a positive electrode for a non-aqueous electrolyte secondary battery, including a current collector and a mixture layer attached thereto. The mixture layer includes an active material including particles of a first active material, i.e., a lithium-manganese composite oxide, and particles of a second active material, i.e., a lithium-nickel composite oxide. A proportion of the first active material particles in the active material is 51 vol % to 90 vol %. A volume-based particle size distribution of the first active material particles has a first peak on a larger particle side and a second peak on a smaller particle side. A first particle size D1 corresponding to the first peak is 2.5 to 5 times larger than a second particle size D2 corresponding to the second peak. A volume-based particle size distribution of the second active material particles has a third peak corresponding to a third particle size D3 satisfying D1>D3>D2.

Abstract: A nonaqueous electrolyte secondary battery includes: a positive electrode 4 including a positive electrode current collector and a positive electrode mixture layer containing a positive electrode active material and a binder, the positive electrode mixture layer being provided on the positive electrode current collector; a negative electrode 5; a porous insulating layer 6 interposed between the positive electrode 4 and the negative electrode 5; and a nonaqueous electrolyte. The positive electrode 4 has a tensile extension percentage of equal to or higher than 3.0%. The positive electrode current collector is made of aluminium containing iron. In this manner, the tensile extension percentage of the positive electrode is increased without a decrease in capacity of the nonaqueous electrolyte secondary battery. Accordingly, even when the nonaqueous electrolyte secondary battery is destroyed by crush, occurrence of short-circuit in the nonaqueous electrolyte secondary battery can be suppressed.

Abstract: There is provided a technique for improving the flatness at the surface of members embedded in a plurality of recesses without resulting in an increase in the time required for the manufacturing processes. According to this technique, the dummy patterns can be placed up to the area near the boundary BL between the element forming region DA and dummy region FA by placing the first dummy pattern DP1 of relatively wider area and the second dummy pattern DP2 of relatively small area in the dummy region FA. Thereby, the flatness of the surface of the silicon oxide film embedded within the isolation groove can be improved over the entire part of the dummy region FA. Moreover, an increase of the mask data can be controlled when the first dummy patterns DP1 occupy a relatively wide region among the dummy region FA.

Abstract: There is provided a technique for improving the flatness at the surface of members embedded in a plurality of recesses without resulting in an increase in the time required for the manufacturing processes. According to this technique, the dummy patterns can be placed up to the area near the boundary BL between the element forming region DA and dummy region FA by placing the first dummy pattern DP1 of relatively wider area and the second dummy pattern DP2 of relatively small area in the dummy region FA. Thereby, the flatness of the surface of the silicon oxide film embedded within the isolation groove can be improved over the entire part of the dummy region FA. Moreover, an increase of the mask data can be controlled when the first dummy patterns DP1 occupy a relatively wide region among the dummy region FA.

Abstract: To reduce size of a finished product by reducing the number of externally embedded parts, embedding of a Schottky barrier diode relatively large in the amount of current in a semiconductor integrated circuit device has been pursued. It is general practice to densely arrange a number of contact electrodes in a matrix over a Schottky junction region. A sputter etching process to the surface of a silicide layer at the bottom of each contact hole is performed before a barrier metal layer is deposited. However, in a structure in which electrodes are thus arranged over a Schottky junction region, a reverse leakage current in a Schottky barrier diode is varied by variations in the amount of sputter etching. The present invention is a semiconductor integrated circuit device having a Schottky barrier diode in which contact electrodes are arranged over a guard ring in contact with a peripheral isolation region.

Abstract: There is provided a technique for improving the flatness at the surface of members embedded in a plurality of recesses without resulting in an increase in the time required for the manufacturing processes. According to this technique, the dummy patterns can be placed up to the area near the boundary BL between the element forming region DA and dummy region FA by placing the first dummy pattern DP1 of relatively wider area and the second dummy pattern DP2 of relatively small area in the dummy region FA. Thereby, the flatness of the surface of the silicon oxide film embedded within the isolation groove can be improved over the entire part of the dummy region FA. Moreover, an increase of the mask data can be controlled when the first dummy patterns DP1 occupy a relatively wide region among the dummy region FA.

Abstract: There is provided a technique for improving the flatness at the surface of members embedded in a plurality of recesses without resulting in an increase in the time required for the manufacturing processes. According to this technique, the dummy patterns can be placed up to the area near the boundary BL between the element forming region DA and dummy region FA by placing the first dummy pattern DP1 of relatively wider area and the second dummy pattern DP2 of relatively small area in the dummy region FA. Thereby, the flatness of the surface of the silicon oxide film embedded within the isolation groove can be improved over the entire part of the dummy region FA. Moreover, an increase of the mask data can be controlled when the first dummy patterns DP1 occupy a relatively wide region among the dummy region FA.

Abstract: A method for producing a lithium-containing composite oxide represented by General Formula (1): LixMyMe1?yO2+???(1) where M represents at least one element selected from the group consisting of Ni, Co and Mn, Me represents a metal element that is different from M, 0.95?x?1.10 and 0.1?y?1. A lithium compound and a compound that contains M and Me are baked. The thus-obtained baked product is washed with a washing solution that contains one or more water-soluble polar aprotic solvents such as N-methyl-2-pyrrolidone (NMP), N,N?-dimethylimidazolidinone (DMI) and dimethylsulfoxide (DMSO).