Patents by Inventor Kuan-Chang CHANG
Kuan-Chang CHANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11191873Abstract: A method for processing a biomedical material using a supercritical fluid includes introducing the supercritical fluid into a cavity. The supercritical fluid is doped with a hydrogen isotope-labeled compound, an organic metal compound, an element selecting from a halogen element, oxygen, sulfur, selenium, phosphorus or arsenic, or a compound containing the element. The biomedical material in the cavity is modified by the supercritical fluid at a temperature above a critical temperature of the supercritical fluid and a pressure above a critical pressure of the supercritical fluid.Type: GrantFiled: November 21, 2017Date of Patent: December 7, 2021Assignee: NATIONAL SUN YAT-SEN UNIVERSITYInventors: Ting-Chang Chang, Kuan-Chang Chang, Chih-Cheng Shih, Chih-Hung Pan, Chih-Yang Lin
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Patent number: 11101141Abstract: A method for reducing defects of an electronic component using a supercritical fluid includes recrystallizing and rearranging grains in the electronic component by introducing the supercritical fluid doped with H2S together with an electromagnetic wave into a cavity. The cavity has a temperature above a critical temperature of the supercritical fluid and a pressure above a critical pressure of the supercritical fluid.Type: GrantFiled: July 15, 2019Date of Patent: August 24, 2021Assignee: NATIONAL SUN YAT-SEN UNIVERSITY KZInventors: Ting-Chang Chang, Kuan-Chang Chang, Chih-Cheng Shih, Chih-Hung Pan
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Publication number: 20190341267Abstract: A method for reducing defects of an electronic component using a supercritical fluid includes recrystallizing and rearranging grains in the electronic component by introducing the supercritical fluid doped with H2S together with an electromagnetic wave into a cavity. The cavity has a temperature above a critical temperature of the supercritical fluid and a pressure above a critical pressure of the supercritical fluid.Type: ApplicationFiled: July 15, 2019Publication date: November 7, 2019Inventors: Ting-Chang Chang, Kuan-Chang Chang, Chih-Cheng Shih, Chih-Hung Pan
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Patent number: 10461252Abstract: A resistive random access memory overcomes the low durability of the conventional resistive random access memory. The resistive random access memory includes a first electrode, a second electrode, an enclosing layer and an oxygen-containing resistance changing layer. The first and second electrodes are separate from each other. The enclosing layer forms a first via-hole. The oxygen-containing resistance changing layer is arranged for the first via-hole. The first and second electrodes and the enclosing layer jointly enclose the oxygen-containing resistance changing layer. Each of the first electrode, the second electrode and the enclosing layer is made of an element not containing oxygen.Type: GrantFiled: July 19, 2016Date of Patent: October 29, 2019Assignee: National Sun Yat-Sen UniversityInventors: Ting-Chang Chang, Kuan-Chang Chang, Tsung-Ming Tsai, Chih-Cheng Shih, Chih-Hung Pan
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Publication number: 20180227997Abstract: A method for increasing the luminous intensity of an ultraviolet light emitting diode includes heating an ultraviolet light emitting diode to a working temperature, and supplying electricity to the ultraviolet light emitting diode at the working temperature to make the ultraviolet light emitting diode emit ultraviolet light. An apparatus for increasing the luminous intensity of an ultraviolet light emitting diode includes a substrate, an ultraviolet light emitting diode mounted on the substrate, an electric heater mounted on the substrate, a temperature sensor, and a controller electrically connected to the ultraviolet light emitting diode, the electric heater, and the temperature sensor. The controller can heat the ultraviolet light emitting diode through the substrate.Type: ApplicationFiled: May 17, 2017Publication date: August 9, 2018Inventors: Ting-Chang Chang, Kuan-Chang Chang, Tsung-Ming Tsai, Chih-Cheng Shih, Bo-Wei Chen, Chung-I Yang
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Patent number: 10045414Abstract: A method for increasing the luminous intensity of an ultraviolet light emitting diode includes heating an ultraviolet light emitting diode to a working temperature, and supplying electricity to the ultraviolet light emitting diode at the working temperature to make the ultraviolet light emitting diode emit ultraviolet light. An apparatus for increasing the luminous intensity of an ultraviolet light emitting diode includes a substrate, an ultraviolet light emitting diode mounted on the substrate, an electric heater mounted on the substrate, a temperature sensor, and a controller electrically connected to the ultraviolet light emitting diode, the electric heater, and the temperature sensor. The controller can heat the ultraviolet light emitting diode through the substrate.Type: GrantFiled: May 17, 2017Date of Patent: August 7, 2018Assignee: National Sun Yat-Sen UniversityInventors: Ting-Chang Chang, Kuan-Chang Chang, Tsung-Ming Tsai, Chih-Cheng Shih, Bo-Wei Chen, Chung-I Yang
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Publication number: 20180193525Abstract: A method for processing a biomedical material using a supercritical fluid includes introducing the supercritical fluid into a cavity. The supercritical fluid is doped with a hydrogen isotope-labeled compound, an organic metal compound, an element selecting from a halogen element, oxygen, sulfur, selenium, phosphorus or arsenic, or a compound containing the element. The biomedical material in the cavity is modified by the supercritical fluid at a temperature above a critical temperature of the supercritical fluid and a pressure above a critical pressure of the supercritical fluid.Type: ApplicationFiled: November 21, 2017Publication date: July 12, 2018Inventors: Ting-Chang Chang, Kuan-Chang Chang, Chih-Cheng Shih, Chih-Hung Pan, Chih-Yang Lin
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Publication number: 20180195200Abstract: A method for processing an electronic component using a supercritical fluid includes introducing the supercritical fluid into a cavity. The supercritical fluid is doped with a hydrogen isotope-labeled compound, an organic metal compound, an element selecting from a halogen element, oxygen, sulfur, selenium, phosphorus or arsenic, or a compound containing the element. An electronic component in the cavity is modified by the supercritical fluid at a temperature above a critical temperature of the supercritical fluid and a pressure above a critical pressure of the supercritical fluid.Type: ApplicationFiled: September 22, 2017Publication date: July 12, 2018Inventors: TING-CHANG CHANG, KUAN-CHANG CHANG, CHIH-CHENG SHIH, CHIH-HUNG PAN
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Patent number: 9935265Abstract: A resistive random access memory overcomes the low reliability of the conventional resistive random access memory. The resistive random access memory includes a resistance changing layer and two electrode layers. The two electrode layers are coupled with the resistance changing layer. Each of the two electrode layers includes a doping area containing a heavy element. In such an arrangement, the above deficiency can be overcome.Type: GrantFiled: October 12, 2016Date of Patent: April 3, 2018Assignee: National Sun Yat-Sen UniversityInventors: Ting-Chang Chang, Kuan-Chang Chang, Tsung-Ming Tsai, Chih-Hung Pan, Po-Hsun Chen
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Patent number: 9853214Abstract: A resistive random access memory includes a first electrode, a separating medium, a resistance changing layer and a second electrode. The first electrode has a mounting face. The separating medium has a first face in contact with the mounting face, a second face opposite to the first face, and an inner face extending between the first and second faces. The separating medium forms a through hole extending from the first to second face. A part of the mounting face is not covered by the separating medium. The separating medium has a first dielectric. The resistance changing layer extends along the part of the mounting face as well as the inner and second faces. The resistance changing layer has a second dielectric having a dielectric constant larger than a dielectric constant of the first dielectric by 2 or less. The second electrode is arranged on the resistance changing layer.Type: GrantFiled: December 29, 2016Date of Patent: December 26, 2017Assignee: National Sun Yat-Sen UniversityInventors: Ting-Chang Chang, Kuan-Chang Chang, Tsung-Ming Tsai, Tian-Jian Chu, Chih-Hung Pan
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Publication number: 20170346004Abstract: A resistive random access memory overcomes the low reliability of the conventional resistive random access memory. The resistive random access memory includes a resistance changing layer and two electrode layers. The two electrode layers are coupled with the resistance changing layer. Each of the two electrode layers includes a doping area containing a heavy element. In such an arrangement, the above deficiency can be overcome.Type: ApplicationFiled: October 12, 2016Publication date: November 30, 2017Inventors: Ting-Chang Chang, Kuan-Chang Chang, Tsung-Ming Tsai, Chih-Hung Pan, Po-Hsun Chen
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Publication number: 20170341050Abstract: The present disclosure provides a reaction method with homogeneous-phase supercritical fluid, including: preparing a supercritical fluid and a solute; supplying the supercritical fluid and the solute into a molecular sieve component to uniformly mix the supercritical fluid and the solute in the molecular sieve component, forming a homogeneous-phase supercritical fluid; and supplying the homogeneous-phase supercritical fluid into a reaction chamber for conducting a reaction.Type: ApplicationFiled: October 12, 2016Publication date: November 30, 2017Inventors: Ting-Chang Chang, Kuan-Chang Chang, Tsung-Ming Tsai, Chih-Cheng Shih, Chih-Hung Pan
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Publication number: 20170317281Abstract: A resistive random access memory overcomes the low durability of the conventional resistive random access memory. The resistive random access memory includes a first electrode, a second electrode, an enclosing layer and an oxygen-containing resistance changing layer. The first and second electrodes are separate from each other. The enclosing layer forms a first via-hole. The oxygen-containing resistance changing layer is arranged for the first via-hole. The first and second electrodes and the enclosing layer jointly enclose the oxygen-containing resistance changing layer. Each of the first electrode, the second electrode and the enclosing layer is made of an element not containing oxygen.Type: ApplicationFiled: July 19, 2016Publication date: November 2, 2017Inventors: Ting-Chang Chang, Kuan-Chang Chang, Tsung-Ming Tsai, Chih-Cheng Shih, Chih-Hung Pan
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Publication number: 20170222143Abstract: A resistive random access memory is provided to solve the problem of low switching speed of the conventional resistive random access memory. The resistive random access memory may include a thermally conductive layer, a first electrode layer, a heat preserving element, a resistance changing layer and a second electrode layer. The first electrode layer is arranged on the thermally conductive layer. The heat preserving element is arranged on the first electrode layer and forms a through-hole. A part of a surface of the first electrode layer is exposed to the through-hole. The resistance changing layer extends from the part of the surface of the first electrode layer to a surface of the heat preserving element that is located outside the through-hole. The second electrode layer is arranged on the resistance changing layer.Type: ApplicationFiled: May 17, 2016Publication date: August 3, 2017Inventors: Ting-Chang Chang, Kuan-Chang Chang, Tsung-Ming Tsai, Tian-Jian Chu, Chih-Hung Pan
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Patent number: 9711720Abstract: A resistive random access memory including a first electrode, a separating medium, a resistance changing layer and a second electrode is disclosed. The first electrode has a mounting face. The separating medium is arranged on the first electrode and forms a through hole. A part of the first electrode is not covered by the separating medium. The separating medium has a first dielectric. The resistance changing layer extends along the part of the first electrode as well as along an inner face and the second face of the separating medium. The resistance changing layer has a second dielectric having a dielectric constant larger than a dielectric constant of the first dielectric by 2 or less. The second electrode is arranged on the resistance changing layer. In this arrangement, the problem of unstable forming voltage of the conventional resistive random access memory can be solved.Type: GrantFiled: June 9, 2015Date of Patent: July 18, 2017Assignee: National Sun Yat-Sen UniversityInventors: Ting-Chang Chang, Kuan-Chang Chang, Tsung-Ming Tsai, Tian-Jian Chu, Chih-Hung Pan
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Patent number: 9685610Abstract: A method for producing a resistive random access memory includes preparing a first metal layer and sputtering a resistive switching layer on the first metal layer. Surface treatment is conducted on the resistive switching layer by using a plasma containing mobile ions to dope the mobile ions into the resistive switching layer. The polarity of the mobile ions is opposite to the polarity of oxygen ions. Then, a second metal layer is sputtered on the resistive switching layer.Type: GrantFiled: October 7, 2016Date of Patent: June 20, 2017Assignee: NATIONAL SUN YAT-SEN UNIVERSITYInventors: Ting-Chang Chang, Kuan-Chang Chang, Tsung-Ming Tsai, Tian-Jian Chu, Chih-Hung Pan
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Publication number: 20170117465Abstract: A resistive random access memory does not encounter the undesired effects caused by sneak current which occurs when a conventional resistive random access memory operates in an integrated circuit. The resistive random access memory includes a first electrode layer, a first insulating layer, an oxygen-containing layer, a second insulating layer and a second electrode layer. The first insulating layer is arranged on the first electrode layer. The oxygen-containing layer is arranged on the first insulating layer and includes an oxide doped with a metal element. The metal element does not exceed 10% of the oxygen-containing layer. The second insulating layer is arranged on the oxygen-containing layer, and the second electrode layer is arranged on the second insulating layer. In this arrangement, the undesired effects caused by sneak current can be effectively eliminated.Type: ApplicationFiled: December 3, 2015Publication date: April 27, 2017Inventors: Ting-Chang Chang, Kuan-Chang Chang, Tsung-Ming Tsai, Chih-Cheng Shih, Chih-Hung Pan
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Publication number: 20170117466Abstract: A resistive random access memory overcomes the difficulty in reducing the forming voltage thereof. The resistive random access memory includes a first electrode layer, a separating portion, a lateral wall portion, an oxygen-containing rheostatic layer and a second electrode layer. The separating portion is arranged on the first electrode layer and forms a through-hole. The first electrode layer is exposed via the through-hole. The lateral wall portion is annularly arranged on an inner periphery of the separating portion defining the through-hole. The lateral wall portion is connected to the first electrode layer and includes a first dielectric. The oxygen-containing rheostatic layer covers the first electrode layer, the separating portion and the lateral wall portion. The oxygen-containing rheostatic layer includes a second dielectric smaller than the first dielectric. The second electrode layer is arranged on the oxygen-containing rheostatic layer.Type: ApplicationFiled: December 3, 2015Publication date: April 27, 2017Inventors: Ting-Chang Chang, Kuan-Chang Chang, Tsung-Ming Tsai, Tian-Jian Chu, Chih-Hung Pan
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Publication number: 20170110658Abstract: A resistive random access memory includes a first electrode, a separating medium, a resistance changing layer and a second electrode. The first electrode has a mounting face. The separating medium has a first face in contact with the mounting face, a second face opposite to the first face, and an inner face extending between the first and second faces. The separating medium forms a through hole extending from the first to second face. A part of the mounting face is not covered by the separating medium. The separating medium has a first dielectric. The resistance changing layer extends along the part of the mounting face as well as the inner and second faces. The resistance changing layer has a second dielectric having a dielectric constant larger than a dielectric constant of the first dielectric by 2 or less. The second electrode is arranged on the resistance changing layer.Type: ApplicationFiled: December 29, 2016Publication date: April 20, 2017Inventors: Ting-Chang Chang, Kuan-Chang Chang, Tsung-Ming Tsai, Tian-Jian Chu, Chih-Hung Pan
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Patent number: 9620211Abstract: A maintaining device and a maintenance method for maintaining the normal operation of a resistive random access memory are disclosed. The maintenance method can be executed by the maintaining device. Said memory includes first and second electrodes. The first electrode is not grounded. The maintaining device is connected to the first electrode so that the first electrode receives an operational signal and a restoring signal generated by the maintaining device. The operational signal transits from a zero voltage to a non-zero voltage and then to the zero voltage. If the operational signal has already transited from the non-zero voltage to the zero voltage, the maintenance method controls the restoring signal to transit from the zero voltage to a negative voltage, controls the restoring signal to remain the negative voltage for a period of restoring time, and controls the restoring signal to transit from the negative voltage to the zero voltage.Type: GrantFiled: July 6, 2016Date of Patent: April 11, 2017Assignee: National Sun Yat-Sen UniversityInventors: Ting-Chang Chang, Kuan-Chang Chang, Tsung-Ming Tsai, Yu-Ting Su, Chih-Hung Pan