Patents by Inventor Kuan Fu Chen

Kuan Fu Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10964742
    Abstract: A circuit that includes: a photodiode configured to absorb photons and to generate photo-carriers from the absorbed photons; a first MOSFET transistor that includes: a first channel terminal coupled to a first terminal of the photodiode and configured to collect a portion of the photo-carriers generated by the photodiode; a second channel terminal; and a gate terminal coupled to a first control voltage source; a first readout circuit configured to output a first readout voltage; a second readout circuit configured to output a second readout voltage; and a current-steering circuit configured to steer the photo-carriers generated by the photodiode to one or both of the first readout circuit and the second readout circuit.
    Type: Grant
    Filed: January 24, 2020
    Date of Patent: March 30, 2021
    Assignee: Artilux, Inc.
    Inventors: Yun-Chung Na, Szu-Lin Cheng, Shu-Lu Chen, Han-Din Liu, Hui-Wen Chen, Che-Fu Liang, Yuan-Fu Lyu, Chien-Lung Chen, Chung-Chih Lin, Kuan-Chen Chu
  • Publication number: 20210034183
    Abstract: A pixel array substrate includes a first touch signal line having a first and second portion and a bridge portion, pixel structures including a first and second pixel structure, a first and second data line, a first and second connection pattern, and a touch electrode. The first pixel structure and the second pixel structure are respectively located on a first and second side of the first touch signal line. The first data line and the second data line are respectively located on the second and first sides of the first touch signal line. The first connection pattern is electrically connected to the first data line and the first pixel structure. The second connection pattern is electrically connected to the second data line and the second pixel structure. The bridge portion of the first touch signal line crosses over the first connection pattern and the second connection pattern.
    Type: Application
    Filed: January 9, 2020
    Publication date: February 4, 2021
    Applicant: Au Optronics Corporation
    Inventors: Kuan-Yu Chiu, Teng-Fu Tung, Yi-Chi Chen, Ming-Hsuan Lee
  • Patent number: 10886309
    Abstract: An optical apparatus including a semiconductor substrate; a first light absorption region supported by the semiconductor substrate, the first light absorption region including germanium and configured to absorb photons and to generate photo-carriers from the absorbed photons; a first layer supported by at least a portion of the semiconductor substrate and the first light absorption region, the first layer being different from the first light absorption region; one or more first switches controlled by a first control signal, the one or more first switches configured to collect at least a portion of the photo-carriers based on the first control signal; and one or more second switches controlled by a second control signal, the one or more second switches configured to collect at least a portion of the photo-carriers based on the second control signal, wherein the second control signal is different from the first control signal.
    Type: Grant
    Filed: February 28, 2018
    Date of Patent: January 5, 2021
    Assignee: Artilux, Inc.
    Inventors: Yun-Chung Na, Che-Fu Liang, Szu-Lin Cheng, Shu-Lu Chen, Kuan-Chen Chu, Chung-Chih Lin, Han-Din Liu
  • Patent number: 10886312
    Abstract: An optical apparatus including a semiconductor substrate; a first light absorption region supported by the semiconductor substrate, the first light absorption region including germanium and configured to absorb photons and to generate photo-carriers from the absorbed photons; a first layer supported by at least a portion of the semiconductor substrate and the first light absorption region, the first layer being different from the first light absorption region; one or more first switches controlled by a first control signal, the one or more first switches configured to collect at least a portion of the photo-carriers based on the first control signal; and one or more second switches controlled by a second control signal, the one or more second switches configured to collect at least a portion of the photo-carriers based on the second control signal, wherein the second control signal is different from the first control signal.
    Type: Grant
    Filed: October 18, 2019
    Date of Patent: January 5, 2021
    Assignee: Artilux, Inc.
    Inventors: Yun-Chung Na, Che-Fu Liang, Szu-Lin Cheng, Shu-Lu Chen, Kuan-Chen Chu, Chung-Chih Lin, Han-Din Liu
  • Patent number: 10861888
    Abstract: An optical apparatus that includes: a semiconductor substrate formed from a first material, the semiconductor substrate including a first n-doped region; and a photodiode supported by the semiconductor substrate, the photodiode including an absorption region configured to absorb photons and to generate photo-carriers from the absorbed photons, the absorption region being formed from a second material different than the first material and including: a first p-doped region; and a second n-doped region coupled to the first n-doped region, wherein a second doping concentration of the second n-doped region is less than or substantially equal to a first doping concentration of the first n-doped region.
    Type: Grant
    Filed: April 12, 2018
    Date of Patent: December 8, 2020
    Assignee: Artilux, Inc.
    Inventors: Yun-Chung Na, Szu-Lin Cheng, Shu-Lu Chen, Han-Din Liu, Hui-Wen Chen, Che-Fu Liang, Yuan-Fu Lyu, Chien-Lung Chen, Chung-Chih Lin, Kuan-Chen Chu
  • Patent number: 10825599
    Abstract: A carrier structure includes a substrate, a first patterned circuit layer and at least one magnetic element. The substrate has a first surface and an opening passing through the substrate. The first patterned circuit layer is disposed on the first surface of the substrate and includes an annular circuit for generating an electromagnetic field. The magnetic element is disposed within the opening of the substrate, wherein the magnetic element couples the annular circuit and acts in response to the magnetic force of the electromagnetic field.
    Type: Grant
    Filed: November 21, 2017
    Date of Patent: November 3, 2020
    Assignee: Unimicron Technology Corp.
    Inventors: Chang-Fu Chen, Chun-Hao Chen, Kuan-Hsi Wu, Pi-Te Pan
  • Publication number: 20200295233
    Abstract: A light-emitting device comprises a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first contact layer on the first semiconductor layer; a second contact layer on the second semiconductor layer, wherein the first contact layer and the second contact layer comprise a metal material other than gold (Au) or copper (Cu); a first pad on the semiconductor stack; a second pad on the semiconductor stack.
    Type: Application
    Filed: June 3, 2020
    Publication date: September 17, 2020
    Inventors: Chao-Hsing CHEN, Jia-Kuen WANG, Tzu-Yao TSENG, Bo-Jiun HU, Tsung-Hsun CHIANG, Wen-Hung CHUANG, Kuan-Yi LEE, Yu-Ling LIN, Chien-Fu SHEN, Tsun-Kai KO
  • Patent number: 10739443
    Abstract: An optical apparatus including a semiconductor substrate; a first light absorption region supported by the semiconductor substrate, the first light absorption region configured to absorb photons and to generate photo-carriers from the absorbed photons; one or more first switches controlled by a first control signal, the one or more first switches configured to collect at least a portion of the photo-carriers based on the first control signal; and one or more second switches controlled by a second control signal, the one or more second switches configured to collect at least a portion of the photo-carriers based on the second control signal. The one or more first switches include a first trench located between the first p-doped region and the first n-doped region. The one or more second switches include a second trench located between the second p-doped region and the second n-doped region.
    Type: Grant
    Filed: February 28, 2018
    Date of Patent: August 11, 2020
    Assignee: Artilux, Inc.
    Inventors: Yun-Chung Na, Che-Fu Liang, Szu-Lin Cheng, Shu-Lu Chen, Kuan-Chen Chu, Chung-Chih Lin, Han-Din Liu
  • Patent number: 10741598
    Abstract: An optical apparatus including a semiconductor substrate; a first light absorption region supported by the semiconductor substrate, the first light absorption region configured to absorb photons and to generate photo-carriers from the absorbed photons; one or more first switches controlled by a first control signal, the one or more first switches configured to collect at least a portion of the photo-carriers based on the first control signal; one or more second switches controlled by a second control signal, the one or more second switches configured to collect at least a portion of the photo-carriers based on the second control signal; and a counter-doped region formed in a first portion of the first light absorption region, the counter-doped region including a first dopant and having a first net carrier concentration lower than a second net carrier concentration of a second portion of the first light absorption region.
    Type: Grant
    Filed: February 28, 2018
    Date of Patent: August 11, 2020
    Assignee: Atrilux, Inc.
    Inventors: Yun-Chung Na, Che-Fu Liang, Szu-Lin Cheng, Shu-Lu Chen, Kuan-Chen Chu, Chung-Chih Lin, Han-Din Liu
  • Publication number: 20200235227
    Abstract: A method for fabricating semiconductor device includes the steps of: forming a fin-shaped structure on a substrate; forming a gate dielectric layer on the fin-shaped structure; forming a gate electrode on the fin-shaped structure; performing a nitridation process to implant ions into the gate dielectric layer adjacent to two sides of the gate electrode; and forming an epitaxial layer adjacent to two sides of the gate electrode.
    Type: Application
    Filed: February 22, 2019
    Publication date: July 23, 2020
    Inventors: Chung-Fu Chang, Kuan-Hung Chen, Guang-Yu Lo, Chun-Chia Chen, Chun-Tsen Lu
  • Patent number: 10714197
    Abstract: A memory device and a program verification method thereof are provided. The write verification method includes: reading a previous page to obtain first read data, writing input data to a current page, reading the previous page or the current page to obtain second read data, and analyzing at least one of the first read data and the second read data to determine whether to back up at least one of the first read data and the input data to a redundant block of the memory device.
    Type: Grant
    Filed: April 18, 2019
    Date of Patent: July 14, 2020
    Assignee: MACRONIX INTERNATIONAL CO., LTD.
    Inventors: Ya-Jui Lee, Kuan-Fu Chen
  • Patent number: 10707260
    Abstract: A circuit that includes: a photodiode configured to absorb photons and to generate photo-carriers from the absorbed photons; a first MOSFET transistor that includes: a first channel terminal coupled to a first terminal of the photodiode and configured to collect a portion of the photo-carriers generated by the photodiode; a second channel terminal; and a gate terminal coupled to a first control voltage source; a first readout circuit configured to output a first readout voltage; a second readout circuit configured to output a second readout voltage; and a current-steering circuit configured to steer the photo-carriers generated by the photodiode to one or both of the first readout circuit and the second readout circuit.
    Type: Grant
    Filed: April 12, 2018
    Date of Patent: July 7, 2020
    Assignee: Artilux, Inc.
    Inventors: Yun-Chung Na, Szu-Lin Cheng, Shu-Lu Chen, Han-Din Liu, Hui-Wen Chen, Che-Fu Liang, Yuan-Fu Lyu, Chien-Lung Chen, Chung-Chih Lin, Kuan-Chen Chu
  • Patent number: 10680138
    Abstract: A light-emitting device comprises a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first pad on the semiconductor stack; a second pad on the semiconductor stack, wherein the first pad and the second pad are separated from each other with a distance, which define a region between the first pad and the second pad on the semiconductor stack; and multiple vias penetrating the active layer to expose the first semiconductor layer, wherein the first pad and the second pad are formed on regions other than the multiple vias.
    Type: Grant
    Filed: April 15, 2019
    Date of Patent: June 9, 2020
    Assignee: EPISTAR CORPORATION
    Inventors: Chao-Hsing Chen, Jia-Kuen Wang, Tzu-Yao Tseng, Bo-Jiun Hu, Tsung-Hsun Chiang, Wen-Hung Chuang, Kuan-Yi Lee, Yu-Ling Lin, Chien-Fu Shen, Tsun-Kai Ko
  • Publication number: 20200174883
    Abstract: A method of screening weak bits in a memory array. The method includes storing a first set of data in a first memory array of the memory array, performing a first baking process on at least the first memory array or applying a first magnetic field to at least the first memory array, tracking an address of at least a first memory cell of a first set of memory cells of the first memory array, if the first memory cell of the first set of memory cells stores altered data, and at least one of replacing the first memory cell of the first set of memory cells storing the altered data with a corresponding memory cell in a second memory array of the memory array, or discarding the first memory cell of the first set of memory cells storing the altered data.
    Type: Application
    Filed: February 10, 2020
    Publication date: June 4, 2020
    Inventors: Yu-Der CHIH, Chia-Fu LEE, Chien-Yin LIU, Yi-Chun SHIH, Kuan-Chun CHEN, Hsueh-Chih YANG, Shih-Lien Linus LU
  • Publication number: 20200168450
    Abstract: A method for fabricating interconnect of semiconductor device. The method includes providing a base substrate, having an inter-layer dielectric layer on top. A copper interconnect structure is formed in the inter-layer dielectric layer. A pre-sputter clean process is performed with hydrogen radicals on the copper interconnect structure. A degas process is sequentially performed on the copper interconnect structure. A cobalt cap layer is formed on the copper interconnect structure.
    Type: Application
    Filed: November 28, 2018
    Publication date: May 28, 2020
    Applicant: United Microelectronics Corp.
    Inventors: Ko-Wei Lin, Kuan-Hsiang Chen, Hsin-Fu Huang, Chun-Ling Lin, Sheng-Yi Su, Pei-Hsun Kao
  • Patent number: 10665303
    Abstract: Methods, systems and apparatus for effectively erasing blocks with few programmed pages are provided. In one aspect, a system includes a memory and a controller coupled to the memory. The memory includes blocks each having pages. The controller is configured to determine whether a threshold page with a particular page number in a block of the memory is programmed, to erase the block according to a normal erase action in response to determining that the threshold page is programmed, and to erase the block according to a particular erasing action that is configured to erase the block deeper than the normal erase action in response to determining that the threshold page is not programmed. The particular erasing action can include pre-programming the block before erasing the block, decreasing an erase verify voltage before erasing the block, or adding one or more erasing pulses with a new erasing voltage.
    Type: Grant
    Filed: May 10, 2019
    Date of Patent: May 26, 2020
    Assignee: Macronix International Co., Ltd.
    Inventors: Ya-Jui Lee, Kuan-Fu Chen
  • Publication number: 20200161364
    Abstract: A circuit that includes: a photodiode configured to absorb photons and to generate photo-carriers from the absorbed photons; a first MOSFET transistor that includes: a first channel terminal coupled to a first terminal of the photodiode and configured to collect a portion of the photo-carriers generated by the photodiode; a second channel terminal; and a gate terminal coupled to a first control voltage source; a first readout circuit configured to output a first readout voltage; a second readout circuit configured to output a second readout voltage; and a current-steering circuit configured to steer the photo-carriers generated by the photodiode to one or both of the first readout circuit and the second readout circuit.
    Type: Application
    Filed: January 24, 2020
    Publication date: May 21, 2020
    Inventors: Yun-Chung Na, Szu-Lin Cheng, Shu-Lu Chen, Han-Din Liu, Hui-Wen Chen, Che-Fu Liang, Yuan-Fu Lyu, Chien-Lung Chen, Chung-Chih Lin, Kuan-Chen Chu
  • Patent number: 10622390
    Abstract: An optical apparatus including a semiconductor substrate; a first light absorption region supported by the semiconductor substrate, the first light absorption region including germanium and configured to absorb photons and to generate photo-carriers from the absorbed photons; a first layer supported by at least a portion of the semiconductor substrate and the first light absorption region, the first layer being different from the first light absorption region; one or more first switches controlled by a first control signal, the one or more first switches configured to collect at least a portion of the photo-carriers based on the first control signal; and one or more second switches controlled by a second control signal, the one or more second switches configured to collect at least a portion of the photo-carriers based on the second control signal, wherein the second control signal is different from the first control signal.
    Type: Grant
    Filed: February 28, 2018
    Date of Patent: April 14, 2020
    Assignee: Artilux, Inc.
    Inventors: Yun-Chung Na, Che-Fu Liang, Szu-Lin Cheng, Shu-Lu Chen, Kuan-Chen Chu, Chung-Chih Lin, Han-Din Liu
  • Publication number: 20200070419
    Abstract: A 3D printing method is provided. A stereolithography 3D printer (2) selects one of multiple layers of print data sequentially, makes a modeling plane be a default thickness (h) away from a material tank (23), irradiates heading to the modeling plane according to the selected layer of the print data for printing one layer of slice physical model (421-422, 431-433), makes the modeling plane detach from light-curable materials (41) in the material tank (23), rotates the material tank (23) for making an angle difference between angles before and after rotation be within a default angle interval, and performs above steps repeatedly until completion of a 3D physical model.
    Type: Application
    Filed: December 11, 2018
    Publication date: March 5, 2020
    Inventors: Chih-Ming NI, Kuan-Yi LU, Chun-Jui CHEN, Chen-Fu HUANG, An-Hsiu LEE, Tsai-Yi LIN
  • Publication number: 20200052016
    Abstract: An optical apparatus including a semiconductor substrate; a first light absorption region supported by the semiconductor substrate, the first light absorption region including germanium and configured to absorb photons and to generate photo-carriers from the absorbed photons; a first layer supported by at least a portion of the semiconductor substrate and the first light absorption region, the first layer being different from the first light absorption region; one or more first switches controlled by a first control signal, the one or more first switches configured to collect at least a portion of the photo-carriers based on the first control signal; and one or more second switches controlled by a second control signal, the one or more second switches configured to collect at least a portion of the photo-carriers based on the second control signal, wherein the second control signal is different from the first control signal.
    Type: Application
    Filed: October 18, 2019
    Publication date: February 13, 2020
    Inventors: Yun-Chung Na, Che-Fu Liang, Szu-Lin Cheng, Shu-Lu Chen, Kuan-Chen Chu, Chung-Chih Lin, Han-Din Liu