Abstract: A manufacturing method of a semiconductor structure includes the following steps. An epitaxial region is formed in a semiconductor substrate. A dielectric layer is formed on the epitaxial region, and a contact hole is formed in the dielectric layer. The contact hole exposes a part of the epitaxial region, and an oxide-containing layer is formed on the epitaxial region exposed by the contact hole. A contact structure is formed in the contact hole and on the oxide-containing layer. The oxide-containing layer is located between the contact structure and the epitaxial region. A semiconductor structure includes the semiconductor substrate, at least one epitaxial region, the contact structure, the oxide-containing layer, and a silicide layer. The contact structure is disposed on the epitaxial region. The oxide-containing layer is disposed between the epitaxial region and the contact structure. The silicide layer is disposed between the oxide-containing layer and the contact structure.

Abstract: A click operation is input in a first step, whether or not the target address thereof is an asf file or an m3u file, which are listening contents files, is judged in a second step, and in the event that this is true, in a third step the target file is played without being downloaded. In the event that the target is a different type of file, whether or not the target address thereof is a wma file or an mp3 file, which are downloadable contents files, is judged in a fourth step, and in the event that this is true, in a fifth step the target file is downloaded. In the event that the target is a different type of file, Web browsing is performed in a sixth step, and the processing ends. Thus, contents can be downloaded or samples thereof listened to with a simple operation.

Abstract: The present invention provides a charging station including a first charging device and a second charging device communicated with the first charging device. Each of the first charging device and the second charging device comprises a parallel interface, a charging interface, a first switch, a control module, and a voltage conversion module electrically coupled to the parallel interface through the first switch. The parallel interface of the first charging device is electrically coupled to the parallel interface of the second charging device. When the first switch of the first charging device is turned on by the control module of the first charging device, and the first switch of the second charging device is turned on by the control module of the second charging device, the voltage conversion modules of the first charging device and the second charging device are electrically coupled in parallel.

Abstract: The present invention provides an alarm system including a receiving module, a control module, a judgment module, a translation module, and an interaction module. The control module generates an alarm definition and an alarm comment code, according to an alarm message received from a battery management system, when the alarm message is the serious alarm message. The control module further outputs the alarm definition and the alarm comment code to the translation module, and the translation module translates the alarm comment code into text and images, when the judgment module receives the request signal from the interaction module. The interaction module displays the alarm message and the text and the images. The present invention further provides an alarm method, an electric vehicle, and a battery storage power system.

Abstract: A load detection circuit includes a first switch, a second switch, a low voltage output module, a high voltage output module, a detection module, and a control module. The detection module detects states of a load and outputs a detected result to the control module. The control module determines whether the load is normal and connected, according to the detected result. When the control module determines that the load is connected and short-circuited, or the load is connected and open-circuited, or the load is disconnected, the control module controls the high voltage output module to stop working, controls the second switch to be turned off, and controls the first switch to be turned on periodically. When the first switch is turned on, the detection module is powered by the low voltage output module. The present invention further provides an energy storage device with the load detection circuit.

Abstract: A click operation is input in a first step, whether or not the target address thereof is an asf file or an m3u file, which are listening contents files, is judged in a second step, and in the event that this is true, in a third step the target file is played without being downloaded. In the event that the target is a different type of file, whether or not the target address thereof is a wma file or an mp3 file, which are downloadable contents files, is judged in a fourth step, and in the event that this is true, in a fifth step the target file is downloaded. In the event that the target is a different type of file, Web browsing is performed in a sixth step, and the processing ends. Thus, contents can be downloaded or samples thereof listened to with a simple operation.

Abstract: A manufacturing process includes (1) disposing a platform in a first tank filled with a first liquid; (2) curing the first liquid to form a portion of a mold on the platform; (3) disposing the platform from the first tank to a second tank filled with a cleaning agent; (4) cleaning; (5) disposing the platform from the second tank to a third tank filled with a second liquid; (6) curing the second liquid to form inner and outer supports of the mold; (7) disposing the platform from the third tank to the second tank; (8) cleaning; (9) disposing the platform from the second tank to the first tank; (10) curing the first liquid to form another portion on the mold; (11) repeating steps (3) to (10) until a complete mold is created; (12) heating the mold to cause the molten material to exit, and (13) creating a hollow product.

Abstract: A manufacturing process includes creating 3D shells; connecting the 3D shells together to arrange as rows of the 3D shells and fasten same in a sand box; disposing the sand box in a closed chamber having a furnace and a heater; activating a pump to lower pressure in the closed chamber to be less than the atmospheric pressure; heating the sand box; introducing a molten, non-metallic material from the furnace into each 3D shell; deactivating the pump; flowing gas into the closed chamber to increase the pressure in the closed chamber to be greater than the atmospheric pressure; cooling the sand box; taking the sand box out of the closed chamber; shaking the sand box to separate the rows of the 3D shells from sand; cutting the rows of the 3D shell to obtain the 3D shells; rubbing each 3D shell; and finishing non-metallic products.

Abstract: A calibration method for a capacitive sensing device is disclosed. The capacitive sensing device is capable of operating in a self-sensing mode or a mutual-sensing mode. The calibration method includes detecting a capacitance change of a panel in the self-sensing mode to generate a self-sensing output signal, detecting a capacitance change of the panel in the mutual-sensing mode to generate a mutual-sensing output signal, calculating a self-sensing difference between the self-sensing output signal and a self-sensing static parameter, and calibrating the mutual-sensing output signal according to the mutual-sensing output signal and the self-sensing difference.

Abstract: A method of forming a semiconductor structure is provided. A substrate having a memory region is provided. A plurality of fin structures are provided and each fin structure stretching along a first direction. A plurality of gate structures are formed, and each gate structure stretches along a second direction. Next, a dielectric layer is formed on the gate structures. A first patterned mask layer is formed, wherein the first patterned mask layer has a plurality of first trenches stretching along the second direction. A second patterned mask layer on the first patterned mask layer, wherein the second patterned mask layer comprises a plurality of first patterns stretching along the first direction. Subsequently, the dielectric layer is patterned by using the first patterned mask layer and the second patterned mask layer as a mask to form a plurality of contact vias. The contact holes are filled with a conductive layer.

Abstract: A fall protection and buffering device includes a retaining strip, a buffer strip, and a compensating arrangement. The buffer strip includes first and second textile layers overlappedly affixed with each other. The first and second textile layers are separated at one end of the buffer strip at the first strip section thereof and are affixed to top and bottom ends of the retaining strip respectively. The first and second textile layers are torn from each other sequentially along the buffer strip in response to a falling force applied to the retaining strip. The compensating arrangement has at least a binding section provided at the retaining strip to fasten the retaining strip in a folded state, such that the binding section compensates a tensile strength of the buffer strip for resisting a tearing between the first and second textile layers.

Abstract: An ant-falling device includes a shell, a first axle and a second axle supported therein, a buffer unit coupled at the first axle, and a reel spring for retracting the buffer unit. The buffer unit includes a rope reel and a driven gear. The second axle includes a driving gear, a first buckling member, and a handle that controls the driving gear to engage with the driven gear for retracting a rope via the rope reel. The shell includes a button, having a second buckling member, movably mounted thereon and being pushed by a spring. When the driving gear is engaged with the driven gear, the button is actuated to couple the second buckling member with the first buckling member to enable the rope being smoothly retracted. As the button is pressed, the first buckling member is released to disengage the driving gear with the driven gear.

Abstract: A method for manufacturing semiconductor devices having metal gate includes follow steps. A substrate including a plurality of isolation structures is provided. A first nFET device and a second nFET device are formed on the substrate. The first nFET device includes a first gate trench and the second nFET includes a second gate trench. A third bottom barrier layer is formed in the first gate trench and a third p-work function metal layer is formed in the second gate trench, simultaneously. The third bottom barrier layer and the third p-work function metal layer include a same material. An n-work function metal layer is formed in the first gate trench and the second gate trench. The n-work function metal layer in the first gate trench directly contacts the third bottom barrier layer, and the n-work function metal layer in the second gate trench directly contacts the third p-work function metal layer.

Abstract: A casting method of using 3D printing to make shell mold, comprising the following steps of: conducting computer-aided graphic design based on the product to be manufactured; importing the graphic design into the 3D printer to print a 3D shell mold; conducting a sintering process of the printed shell mold for solidifying thereof; using the sintered shell mold as a casting cavity, injecting a molten raw material into the shell mold for formation; in the end, taking out the whole shell mold and breaking the shell mold to obtain a cast product; reprocessing the cast product to obtain a finished product; wherein printing materials of the 3D printing are made of a liquid mixture of photosensitive resin and ceramic powder, thereby improving production efficiency and reducing labor intensity as well as pollution.

Abstract: A manufacturing process includes creating 3D shells having a sprue; connecting the 3D shells together to arrange as rows of the 3D shells which are placed in a box filled with sand; placing the box in a vacuum chamber; activating a vacuum pump to compact the sand; activating an induction heater to preheat the box; shaking the box; introducing a molten material from an induction furnace into the sprue of each 3D shell until each 3D shell is filled with the molten material; pumping inert gas into the vacuum chamber to increase pressure in the vacuum chamber until an internal pressure of the vacuum chamber is greater than the atmospheric pressure; gradually cooling the box; taking the box out of the vacuum chamber; separating the 3D shells from the sand; cutting to obtain the 3D shells; rubbing each 3D shell; and removing the sand to finish 3D objects.

Abstract: This disclosure provides a noise suppression circuit for suppressing a noise in a voltage signal. The noise suppression circuit comprises: a switch unit having a first terminal receiving the voltage signal and a second terminal; a capacitor having a first terminal connected to the first terminal of the switch unit and a second terminal grounded; and an analog front-end unit including an operational amplifier with a signal input terminal and a reference-voltage input terminal electrically connected to the second terminal of the switch unit; wherein the switch unit is controlled by a pulse signal.

Abstract: A frequency selecting module for a touch system includes a storage unit, for storing a sum of at least one of a plurality of sensing signals of a plurality sensing channels in the touch system; a spectrum calculating unit, for transforming the sum of the at least one of the plurality of sensing signals stored in the storage unit to generate a spectrum data and storing the spectrum data to the storage unit; and a selecting unit, for generating an adjusting signal according to the spectrum data to select one of a plurality of operation frequencies as a working frequency of the plurality of sensing signals.

Abstract: A fall protection and buffering device includes a retaining strip, and a buffer strip having a length shorter than the retaining strip. The buffer strip has first and second strip sections between two ends and includes first and second textile layers overlappedly affixed with each other. The first and second textile layers are separated at one end of the buffer strip at the first strip section thereof and are affixed to top and bottom ends of the retaining strip respectively. The first and second textile layers are torn from each other sequentially along the first and second strip sections of the buffer strip in response to a falling force applied to the retaining strip. A tensile strength of tearing the first and second textile layers at the first strip section is different from a tensile strength of tearing the first and second textile layers at the second strip section.

Abstract: A method of forming a semiconductor structure is provided. A substrate having a memory region is provided. A plurality of fin structures are provided and each fin structure stretching along a first direction. A plurality of gate structures are formed, and each gate structure stretches along a second direction. Next, a dielectric layer is formed on the gate structures. A first patterned mask layer is formed, wherein the first patterned mask layer has a plurality of first trenches stretching along the second direction. A second patterned mask layer on the first patterned mask layer, wherein the second patterned mask layer comprises a plurality of first patterns stretching along the first direction. Subsequently, the dielectric layer is patterned by using the first patterned mask layer and the second patterned mask layer as a mask to form a plurality of contact vias. The contact holes are filled with a conductive layer.

Abstract: A manufacturing method of a semiconductor structure includes the following steps. An epitaxial region is formed in a semiconductor substrate. A dielectric layer is formed on the epitaxial region, and a contact hole is formed in the dielectric layer. The contact hole exposes a part of the epitaxial region, and an oxide-containing layer is formed on the epitaxial region exposed by the contact hole. A contact structure is formed in the contact hole and on the oxide-containing layer. The oxide-containing layer is located between the contact structure and the epitaxial region. A semiconductor structure includes the semiconductor substrate, at least one epitaxial region, the contact structure, the oxide-containing layer, and a silicide layer. The contact structure is disposed on the epitaxial region. The oxide-containing layer is disposed between the epitaxial region and the contact structure. The silicide layer is disposed between the oxide-containing layer and the contact structure.