Abstract: The present invention relates to a developable bottom antireflective coating (BARC) composition and a pattern forming method using the BARC composition. The BARC composition includes a first polymer having a first carboxylic acid moiety, a hydroxy-containing alicyclic moiety, and a first chromophore moiety; a second polymer having a second carboxylic acid moiety, a hydroxy-containing acyclic moiety, and a second chromophore moiety; a crosslinking agent; and a radiation sensitive acid generator. The first and second chromophore moieties each absorb light at a wavelength from 100 nm to 400 nm. In the patterning forming method, a photoresist layer is formed over a BARC layer of the BARC composition. After exposure, unexposed regions of the photoresist layer and the BARC layer are selectively removed by a developer to form a patterned structure in the photoresist layer. The BARC composition and the pattern forming method are especially useful for implanting levels.

Abstract: The present invention relates to a hybrid photoresist composition for improved resolution and a pattern forming method using the photoresist composition. The photoresist composition includes a radiation sensitive acid generator, a crosslinking agent and a polymer having a hydrophobic monomer unit and a hydrophilic monomer unit containing a hydroxyl group. At least some of the hydroxyl groups are protected with an acid labile moiety having a low activation energy. The photoresist is capable of producing a hybrid response to a single exposure. The patterning forming method utilizes the hybrid response to form a patterned structure in the photoresist layer. The photoresist composition and the pattern forming method of the present invention are useful for printing small features with precise image control, particularly spaces of small dimensions.

Abstract: A method that forms a film of photoresist composition on a substrate and exposes a first and second region of the film to radiation through a first and second mask having a first and second image pattern, respectively. The photoresist composition includes a polymer comprising at least one acid labile group, a photosensitive acid generator capable of generating a first amount of acid upon exposure to a first dose of radiation and of generating a second amount of acid upon exposure to a second dose of radiation, and a photosensitive base generator capable of generating a first amount of base upon exposure to the first dose of radiation and of generating a second amount of base upon exposure to the second dose of radiation. The photosensitive acid generator includes (trifluoro-methylsulfonyloxy)-bicyclo[2.2.1]hept-5-ene-2,3-dicarboximide (MDT), N-hydroxy-naphthalimide dodecane sulfonate (DDSN), or a combination thereof. The photosensitive base generator includes a quaternary ammonium salt.

Abstract: A light emitting device includes a substrate, and a plurality of light emitting structures disposed thereon. Each of the light emitting structures includes an auxiliary electrode disposed on the substrate, a first insulating layer disposed on the substrate and covering the auxiliary electrode, an electrode disposed on the first insulating layer, a second insulating layer disposed on the first insulating layer and having a first opening exposing the electrode, an organic light emitting layer disposed in the first opening, a cathode disposed on the organic light emitting layer, at least a conductive structure penetrating through the first insulating layer and the second insulating layer, and a closed ring structure disposed on the second insulating layer and around the cathode, wherein a thickness of the closed ring structure is larger than that of the cathode.

Abstract: A method of forming different structures of a semiconductor device using a single mask and a hybrid photoresist. The method includes: applying a first photoresist layer on a semiconductor substrate; patterning the first photoresist layer using a photomask to form a first patterned photoresist layer; using the first patterned photoresist layer to form a first structure of a semiconductor device; removing the first patterned photoresist layer; applying a second photoresist layer on the semiconductor substrate; patterning the second photoresist layer using the photomask to form a second patterned photoresist layer; using the second patterned photoresist layer to form a second structure of a semiconductor device; removing the second patterned photoresist layer; and wherein either the first or the second photoresist layer is a hybrid photoresist layer comprising a hybrid photoresist.

Abstract: A composition is provided. The composition includes a polymer and a photosensitive acid generator capable of generating a first amount of acid upon exposure to a first dose of radiation and a second amount of acid upon exposure to a second dose of radiation. The second amount of acid is greater than the first amount of acid. The second dose is greater than the first dose. The composition includes a photosensitive base generator capable of generating a first amount of base upon exposure to the first dose and a second amount of base upon exposure to the second dose, where the first amount of base is greater than the first amount of acid and the second amount of base is less than the second amount of acid. The photosensitive base generator may include benzoin carbamates, O-carbamoylhydroxylamines, O-carbamoyloximes, aromatic sulfonamides, ?-lactones, N-(2-Arylethenyl)amides, azides, amides, oximines, quaternary ammonium salts, or amineimides.

Abstract: The present invention relates to a photoresist composition capable of negative development and a pattern forming method using the photoresist composition. The photoresist composition includes an imaging polymer, a crosslinking agent and a radiation sensitive acid generator. The imaging polymer includes a monomeric unit having an acid-labile moiety-substituted hydroxyl group. The patterning forming method utilizes an organic solvent developer to selectively remove an unexposed region of a photoresist layer of the photoresist composition to form a patterned structure in the photoresist layer. The photoresist composition and the pattern forming method are especially useful for forming material patterns on a semiconductor substrate using 193 nm (ArF) lithography.

Abstract: A package of an environmentally sensitive electronic device and a fabricating method thereof are provided, wherein the package may include a first substrate, a second substrate, the environmentally sensitive electronic device, a packaging body, and a filler. In one or more embodiments, the environmentally sensitive electronic device may be disposed on the first substrate and located between the first substrate and the second substrate. The filler is disposed between the first substrate and the second substrate and covers the environmentally sensitive electronic device. The packaging body is sandwiched between the first substrate and the second substrate and encloses the environmentally sensitive electronic device and the filler. A material for the packaging body may include a bonding of transition metal and metalloid.

Abstract: A touch-sensing display apparatus including a touch panel, an environmentally sensitive electronic device and an adhesive layer is provided. The water/oxygen vapor transmission rate of the touch panel is lower than 10?1 g/m2*day, and the touch panel includes a first substrate, a sensing circuit and at least one water/oxygen barrier layer. The first substrate is a first flexible substrate. The sensing circuit and the water/oxygen barrier layer are disposed on the first substrate. The environmentally sensitive electronic device includes a second substrate and a pixel array. The pixel array is disposed on the second substrate and between the first substrate and the second substrate. The adhesive layer is disposed between the touch panel and the environmentally sensitive electronic device. Moreover, a fabricating method of the above-mentioned touch-sensing display apparatus is also provided.

Abstract: Coating compositions include a polymer including: wherein R1 is a silicon containing moiety, R2 is an acid stable lactone functionality, and R3 is an acid labile lactone functionality; X1, X2, X3 are independently H or CH3; and m and o are non-zero positive integers and n is zero or a positive integer representing the number of repeat units; a photoacid generator; and a solvent. Also disclosed are methods for forming a pattern in the coating composition containing the same.

Abstract: An environmentally sensitive electronic device package including a first adhesive, at least one first side wall barrier, a first substrate, and a second substrate is provided. The first adhesive has a first surface and a second surface opposite to the first surface. The first side wall barrier is distributed in the first adhesive. The first substrate is bonded with the first surface. The first substrate has an environmentally sensitive electronic device formed thereon and the environmentally sensitive electronic device is surrounded by the first side wall barrier. The second substrate is bonded with the second surface. A manufacturing method of the environmentally sensitive electronic device package is also provided.

Abstract: An environmental sensitive electronic device package including a first substrate, a second substrate, an environmental sensitive electronic device, a side wall barrier structure, a first adhesive, and a second adhesive is provided. The environmental sensitive electronic device is located on the first substrate. The first adhesive is located on the first substrate. The side wall barrier structure is located on the first adhesive, and the side wall barrier structure is adhered to the first substrate through the first adhesive. The second adhesive is located on the side wall barrier structure. The side wall barrier structure is adhered to the second substrate through the second adhesive, and the side wall barrier structure, the first adhesive, and the second adhesive are located between the first substrate and the second substrate. A manufacturing method of an environmental sensitive electronic device package is also provided.

Abstract: A touch-sensing display apparatus and a fabricating method thereof are provided. The touch-sensing display apparatus includes a substrate, an organic light emitting diode (OLED) display layer, and a touch structure. The OLED display layer is between the substrate and the touch structure apparatus and directly contacts with the touch structure. The touch structure includes a first water/oxygen barrier layer, an electromagnetic interference (EMI) shielding layer, a sensing circuit layer, and a second water/oxygen barrier layer. The first water/oxygen barrier layer is located on the OLED display layer. The EMI shielding layer is located on the first water/oxygen barrier layer. The sensing circuit layer is located on the EMI shielding layer. The second water/oxygen barrier layer is located on the sensing circuit layer.

Abstract: A negative developable bottom antireflective coating (NDBARC) material includes a polymer containing an aliphatic alcohol moiety, an aromatic moiety, and a carboxylic acid moiety. The NDBARC composition is insoluble in a typical resist solvent such as propylene glycol methyl ether acetate (PGMEA) after coating and baking. The NDBARC material also includes a photoacid generator, and optionally a crosslinking compound. In the NDBARC material, the carboxylic acid provides the developer solubility, while the alcohol alone, the carboxylic acid alone, or their combination provides the PGMEA resistance. The NDBARC material has resistance to the resist solvent, and thus, intermixing does not occur between NDBARC and resist during resist coating over NDBARC.

Abstract: An environmental sensitive electronic device package may include a first substrate, a second substrate, an environmental sensitive electronic device, at least one side wall barrier structure, and a filler layer. The first substrate has at least one predetermined flexure area. The second substrate is located above the first substrate. The environmental sensitive electronic device is located on the first substrate and between the first substrate and the second substrate. The side wall barrier structure is located between the first substrate and the second substrate and surrounds the environmental sensitive electronic device. The side wall barrier structure has at least one flexure stress dispersing structure that is located in the predetermined flexure area. The filler layer is located between the first substrate and the second substrate and covers the side wall barrier structure and the environmental sensitive electronic device.

Abstract: An environmental sensitive electronic device package including a first substrate, a second substrate, an environmental sensitive electronic device, at least one first side wall barrier structure, at least one thermal protrusion, and a first filler layer is provided. The second substrate is disposed above the first substrate. The environmental sensitive electronic device is disposed on the first substrate and located between the first substrate and the second substrate. The first side wall barrier structure is disposed on the second substrate and located between the first substrate and the second substrate, wherein the first side wall barrier structure is located on at least one side of the environmental sensitive electronic device. The thermal protrusion is located on the second substrate. The first filler layer is located between the first substrate and the second substrate and covers the environmental sensitive electronic device, the first side wall barrier structure, and the thermal protrusion.

Abstract: An environmental sensitive electronic device package may include a first substrate, a second substrate, an environmental sensitive electronic device, a first adhesive, a third substrate, at least one first side wall barrier structure, and a second adhesive is provided. The second substrate is located above the first substrate. The environmental sensitive electronic device is located on the first substrate. The first adhesive is located between the first and second substrates and covers the environmental sensitive electronic device. The third substrate is located below the first substrate. The first substrate is located between the second and third substrates. The first side wall barrier structure is located on the third substrate and between the first and the third substrates, wherein the first side wall barrier structure is embedded in the first substrate. The second adhesive is located between the first and third substrates and covers the second side wall barrier structure.

Abstract: A barrier functional film that includes a substrate, at least one side wall barrier structure, a releasing film, and an adhesive is provided. The side wall barrier structure is located on the substrate. The releasing film is located above the substrate, and the side wall barrier structure is located between the substrate and the releasing film. The adhesive covers the side wall barrier structure and is located between the substrate and the releasing film. An environmental sensitive electronic device, a display apparatus, and a manufacturing method of a barrier functional film are also provided.

Abstract: The present invention relates to a hybrid photoresist composition for improved resolution and a pattern forming method using the photoresist composition. The photoresist composition includes a radiation sensitive acid generator, a crosslinking agent and a polymer having a hydrophobic monomer unit and a hydrophilic monomer unit containing a hydroxyl group. At least some of the hydroxyl groups are protected with an acid labile moiety having a low activation energy. The photoresist is capable of producing a hybrid response to a single exposure. The patterning forming method utilizes the hybrid response to form a patterned structure in the photoresist layer. The photoresist composition and the pattern forming method of the present invention are useful for printing small features with precise image control, particularly spaces of small dimensions.

Abstract: The present invention relates to a photoresist composition capable of negative development and a pattern forming method using the photoresist composition. The photoresist composition includes an imaging polymer, a crosslinking agent and a radiation sensitive acid generator. The imaging polymer includes a monomeric unit having an acid-labile moiety-substituted hydroxyl group. The patterning forming method utilizes an organic solvent developer to selectively remove an unexposed region of a photoresist layer of the photoresist composition to form a patterned structure in the photoresist layer. The photoresist composition and the pattern forming method are especially useful for forming material patterns on a semiconductor substrate using 193 nm (ArF) lithography.