Abstract: Acid-catalyzed positive resist compositions which are imageable with 193 nm radiation are obtained using a polymer having acrylate/methacrylate monomeric units comprising a naphthol ester group. The resist may optionally contain polymer having acrylate/methacrylate monomeric units with fluorine-containing functional groups. The resists containing the polymer having acrylate/methacrylate monomeric units comprising a naphthol ester group have an improved process window, including improved etch resistance and reduced swelling compared to conventional fluorine-containing 193 nm resist.

Abstract: Acid-catalyzed positive resist compositions which are imageable with 193 nm radiation and/or possibly other radiation and are developable to form resist structures of improved development characteristics and improved etch resistance are enabled by the use of resist compositions containing imaging polymer component comprising an acid-sensitive polymer having a monomeric unit with a pendant group containing a remote acid labile moiety.

Abstract: A photoresist composition including a polymer is disclosed, wherein the polymer includes at least one monomer having the formula: where R1 represents hydrogen (H), a linear, branched or cyclo alkyl group of 1 to 20 carbons, a semi- or perfluorinated linear, branched or cyclo alkyl group of 1 to 20 carbons or CN; R2 represents an alicyclic group of 5 or more carbon atoms; X represents a methylene, ether, ester, amide or carbonate linkage; R3 represents a linear or branched alkylene group or semi- or perfluorinated linear or branched alkylene group with 1 or more carbon atoms; R4 represents hydrogen (H), methyl (CH3), trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perflourinated aliphatic group; R5 represents trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated substituted or unsubstituted aliphatic group; n represents an integer of 1 or more; and OR12 represents OH or at least one acid labile group selected from a tertiary alkyl

Abstract: Acid-catalyzed positive resist compositions which are imageable with 193 nm radiation are obtained using a polymer having acrylate/methacrylate monomeric units comprising a naphthol ester group. The resist may optionally contain polymer having acrylate/methacrylate monomeric units with fluorine-containing functional groups. The resists containing the polymer having acrylate/methacrylate monomeric units comprising a naphthol ester group have an improved process window, including improved etch resistance and reduced swelling compared to conventional fluorine-containing 193 nm resist.

Abstract: Acid-catalyzed positive resist compositions which are imageable with 193 nm radiation (and possibly other radiation) at low energy levels are obtained using a polymer having acrylate/methacrylate monomeric units comprising a low activation energy moiety preferably attached to a naphthalene ester group. The resist allows the performance benefit of acrylate/methacrylate polymers with low activation energy for imaging thereby enabling improved resolution and reduced post-exposure bake sensitivity. The resist polymer also preferably contains monomeric units comprising fluoroalcohol moiety and a monomeric units comprising a lactone moiety.

Abstract: An organic electroluminescent display (OEL) structure is utilized the UV light as a light source. The light is converted into three original colors of red, green, and blue lights through the fluorescent color conversion layer, so as to be able to eliminate the additional color filtering layer and raise light conversion efficiency. As such, an active substrate, a fluorescent color conversion layer, a UV light emission layer and a encapsulation layer are combined to form the full color active organic electroluminescent display structure, which can be mass produced by utilizing the existing manufacturing process and equipment, thus achieving the purpose of reducing the production cost.

Abstract: A light-emitting material includes a polymeric skeleton and a dye moiety. The dye moiety links to the polymeric skeleton by chemical bonding, and has an energy gap lower than that of the polymeric skeleton. As such, energy is transferred from the polymeric skeleton to the dye moiety when the light-emitting material is excited, thereby emitting light.

Abstract: A method of forming an encapsulation structure for an organic light-emitting device is disclosed. The method is applied to organic light-emitting devices (OLED) and performed in a single reaction chamber. The method includes steps of placing an organic light-emitting device into a plasma chamber, forming a first buffer layer on the organic light-emitting device, forming a first passivation layer on the first buffer layer, forming a second buffer layer on the first passivation layer, and forming a second passivation layer on the second buffer layer.

Abstract: A method for packaging organic electroluminescent (EL) components with polymer passivation layer and structure thereof is developed on the basis of a multi-layer passivation concept to form a wet-adsorption polymer passivation layer for packaging and separating the EL components from moisture and oxygen by a coating or plating process, wherein a surface structure of cathode separators is also put into consideration for enhancement of the passivation layer which is then sealed to substitute for the conventional package-can design.

Abstract: The silicon-containing resist compositions which have low silicon outgassing and high resolution lithographic performance, especially in bilayer or multilayer lithographic applications using 193 nm or shorter wavelength imaging radiation are enabled by the presence of an imaging polymer having silicon-containing, non-acid-labile pendant groups. The resist compositions of the invention are preferably further characterized by the substantial absence of silicon-containing acid-labile moieties.

Abstract: A hygroscopic passivation structure covering a display region of an organic electroluminescent display (OELD) includes at least one buffer layer, a hygroscopic material layer, and a passivation layer. The hygroscopic material is used to adsorb moisture that is generated internally from the OELD and is penetrated through the outer passivation layer.

Abstract: Acid-catalyzed positive resist compositions which are imageable with 193 nm radiation and/or possibly other radiation and are developable to form resist structures of improved development characteristics and improved etch resistance are enabled by the use of resist compositions containing imaging polymer component comprising an acid-sensitive polymer having a monomeric unit with a pendant group containing a remote acid labile moiety.

Abstract: A passivation structure capping an electrical device disposed on a substrate is introduced. The passivation structure includes a first diamond-like carbon film covering a top surface and the sidewall of the electrical device and the surface of the substrate, a buffer layer positioned on the first diamond-like carbon film, and a second diamond-like carbon film positioned on the buffer layer. Part of the second diamond-like carbon film covers the first diamond-like carbon film directly to form a cyclic structure.

Abstract: The silicon-containing resist compositions which have low silicon outgassing and high resolution lithographic performance, especially in bilayer or multilayer lithographic applications using 193 nm or shorter wavelength imaging radiation are enabled by the presence of an imaging polymer having silicon-containing, non-acid-labile pendant groups. The resist compositions of the invention are preferably further characterized by the substantial absence of silicon-containing acid-labile moieties.

Abstract: Thiophene-containing photo acid generators having either of the following general formulas: wherein at least one of R1, R2 or R3 is thiophene or thiophene that is substituted with alkyl, alkoxy or cycloalkyl, and the remaining R1, R2 or R3, not containing a thiophene moiety, are independently selected from the group consisting of alkyl, cycloalkyl and aryl, or at least one of R1, R2 or R3 are joined together to form a cyclic moiety having from about 4 to about 8 ring carbon atoms; and Y is a counter ion, are disclosed as well as the use thereof as a component of a chemically amplified resist composition. In addition to the thiophene-containing photo acid generator, the inventive composition includes a chemically amplified base polymer, a solvent, an optional photosensitizer, an optional base, an optional dissolution modifying agent and an optional surfactant.

Abstract: The present invention is an admixture of an electrically conductive material and an energy sensitive material resulting in a conductive energy sensitive composition. The structures are useful for lithography in microelectronic fabrication to avoid the effects of charging on resists from electron beams. The compositions are also useful in applications of scanning electron metrology and static dissipation.

Abstract: A method for packaging organic electroluminescent (EL) components with polymer passivation layer and structure thereof is developed on the basis of a multi-layer passivation concept to form a wet-adsorption polymer passivation layer for packaging and separating the EL components from moisture and oxygen by a coating or plating process, wherein a surface structure of cathode separators is also put into consideration for enhancement of the passivation layer which is then sealed to substitute for the conventional package-can design.

Abstract: A method for packaging organic electroluminescent (EL) elements comprises the steps including: forming a plurality of organic EL devices on a transparent substrate; laying a plurality of binding layers on a plastic laminated board to form a plastic package laminated board; forming a plurality of cavity domains on the plastic laminated board to serve for a plurality of package cans; and binding a lateral face of the package can. By doing the above said, the organic EL devices are packaged and segregated from outside ambient atmosphere with relatively longer lifetime.

Abstract: Thiophene-containing photo acid generators having either of the following general formulas: 1

Abstract: In the exposure and development of available deep ultraviolet (DUV) sensitive photoresist it has been observed that following the standard prior art methods of exposure and development results in a high density of undesirable pieces of components of the photoresist material, Blob Defects, remaining on the semiconductor substrate (body). A method of exposing and developing the photoresist material which results in a reduced incidence of these Blob Defects consists of introducing a low level uniform flood exposure of light in addition to the commonly used exposure to patterned light, followed by standard development. The flood exposure is in the range of 5 to 50% of the dose-to-clear for a non-patterned exposure.