Patents by Inventor Kuang-Jung Chen

Kuang-Jung Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6372408
    Abstract: In the exposure and development of available deep ultraviolet (DUV) sensitive photoresist it has been observed that following the standard prior art methods of exposure and development results in a high density of undesirable remnants (denoted as Blob Defects) of various components of photoresist material remaining on the semiconductor substrate (body). A method of exposing and developing the photoresist material which results in a reduced incidence of these Blob Defects consists of using a Puddle Development technique to develop the photoresist material, and subsequently exposing the semiconductor wafer to at least one Puddle Rinse cycle which uses water.
    Type: Grant
    Filed: June 21, 2000
    Date of Patent: April 16, 2002
    Assignees: Infineon Technologies AG, International Business Machines Corporation
    Inventors: Zhijian Lu, Alan Thomas, Alois Gutmann, Kuang Jung Chen, Margaret C. Lawson
  • Patent number: 6365321
    Abstract: A photoresist binder composition comprising a homogeneous blend of (i) a hydroxystyrene copolymer comprising a first monomer that is optionally substituted hydroxystyrene and a second monomer containing an acid labile group, preferably pendant to the polymer backbone, and (ii) and a phenolic polymer, that is optionally partially or wholly protected, such as polyhydroxystyrene, poly(hydroxystyrene-co-styrene), poly(hydroxystyrene-co-styrene-co-t-butyl acrylate), novolac, and the like. Also provided is a lithographic resist composition comprising the homogeneous blend of the photoresist binder composition, and a radiation-sensitive acid generator which generates an acid upon exposure to radiation, and a process for using the resist composition to generate resist images on a substrate, such as in the manufacture of integrated circuits or the like.
    Type: Grant
    Filed: April 13, 1999
    Date of Patent: April 2, 2002
    Assignee: International Business Machines Corporation
    Inventors: Kuang-Jung Chen, Ronald Anthony DellaGuardia, Hiroshi Ito, George Michael Jordhamo, Ahmad Dauod Katnani
  • Patent number: 6303263
    Abstract: The present invention is directed to a high-performance irradiation sensitive resists and to a polymer resin composition useful for making the same. In accordance to the present invention, the polymer resin comprises a dual blocked polymer resins. Specifically, the dual blocked polymer resin comprises at least two different acid labile protecting groups which block some, but not all, of the polar functional groups of the polymer resin. a chemically amplified resist system comprising said dual blocked polymer resin; at least one acid generator; and a solvent is also provided herein.
    Type: Grant
    Filed: February 25, 1998
    Date of Patent: October 16, 2001
    Assignee: International Business Machines Machines
    Inventors: Kuang-Jung Chen, Ronald A. DellaGuardia, Wu-Song Huang, Ahmad D. Katnani, Mahmoud M. Khojasteh, Qinghuang Lin
  • Patent number: 6268436
    Abstract: The present invention is directed to a high-performance irradiation sensitive positive-tone resist and to a method of formulating the same. In one aspect, the polymer resin composition of the present invention comprises a blend of at least two miscible aqueous base soluble polymer resins, wherein one of said aqueous base soluble polymer resins of said blend is partially protected with a high activation energy protecting group and the other aqueous base soluble polymer resin of said blend is partially protected with a low activation energy protecting group. A chemically amplified resist system comprising said polymer resin composition; at least one acid generator; and a solvent is also provided herein.
    Type: Grant
    Filed: December 27, 1999
    Date of Patent: July 31, 2001
    Assignee: International Business Machines Corporation
    Inventors: Kuang-Jung Chen, Ronald A. DellaGuardia, Wu-Song Huang, Ahmad D. Katnani, Mahmoud M. Khojasteh, Quighuang Lin
  • Patent number: 6203965
    Abstract: The invention provides new photoresist compositions that contain a resin binder and a blend of photoacid generators. Photoacid generator blends of the invention produce photoacids that differ in acid strength and/or size. A specific composition comprises a terpolymer having units of hydroxystyrene, styrene and t-butyl acrylate with the photoacid generators di-(4-tbutylphenyl)iodonium camphorsulfonate and di-(4-t-butylphenyl)iodonium o-trifluoromethylbenzene sulfonate.
    Type: Grant
    Filed: April 19, 2000
    Date of Patent: March 20, 2001
    Assignees: Shipley Company, L.L.C., IBM Corporation
    Inventors: James F. Cameron, James Michael Mori, George W. Orsula, James W. Thackeray, Wu-Song Huang, Ronald A. DellaGuardia, Kuang-Jung Chen, Hiroshi Ito, Wayne M. Moreau
  • Patent number: 6200726
    Abstract: A photo resist composition contains at least one photoacid generator (PAG), wherein at least two photoacids are produced upon exposure of the photo resist to actinic energy and wherein the photo resist is capable of producing a hybrid response. The function of providing generation of two photoacids in a hybrid resist is to optimize the use of hybrid resist by varying the hybrid space width. The at least two photoacids may differ in their effectiveness at catalyzing at least one mechanism of the hybrid response. In particular, one photoacid may be a weaker acid and another may be a stronger acid, wherein there exists a difference of at least four orders of magnitude between the acid dissociation constant (Ka) of the weaker acid and the stronger acid.
    Type: Grant
    Filed: October 13, 1998
    Date of Patent: March 13, 2001
    Assignee: International Business Machines Corporation
    Inventors: Kuang-Jung Chen, Steven J. Holmes, Wu-Song Huang, Ahmad D. Katnani, Paul A. Rabidoux
  • Patent number: 6132644
    Abstract: The present invention is an admixture of an electrically conductive material and an energy sensitive material resulting in a conductive energy sensitive composition. The structures are useful for lithography in microelectronic fabrication to avoid the effects of charging on resists from electron beams. The compositions are also useful in applications of scanning electron metrology and static dissipation.
    Type: Grant
    Filed: May 28, 1998
    Date of Patent: October 17, 2000
    Assignee: International Business Machines Corporation
    Inventors: Marie Angelopoulos, Edward D. Babich, Inna V. Babich, Kuang-Jung Chen, Wayne Martin Moreau, David E. Seeger
  • Patent number: 6103447
    Abstract: The present invention is directed to a high-performance irradiation sensitive positive-tone resist and to a method of formulating the same. In one aspect, the polymer resin composition of the present invention comprises a blend of at least two miscible aqueous base soluble polymer resins, wherein one of said aqueous base soluble polymer resins of said blend is partially protected with a high activation energy protecting group and the other aqueous base soluble polymer resin of said blend is partially protected with a low activation energy protecting group. A chemically amplified resist system comprising said polymer resin composition; at least one acid generator; and a solvent is also provided herein.
    Type: Grant
    Filed: February 25, 1998
    Date of Patent: August 15, 2000
    Assignee: International Business Machines Corp.
    Inventors: Kuang-Jung Chen, Ronald A. DellaGuardia, Wu-Song Huang, Ahmad D. Katnani, Mahmoud M. Khojasteh, Qinghuang Lin