Abstract: A shower head structure and a plasma processing apparatus are provided. The shower head structure includes a plate body with a first zone and a second zone on a first surface. A plurality of first through holes are in the first zone, each of the first through holes having a diameter uniform with others of the first through holes. A plurality of second through holes are in the second zone. The first zone is in connection with the second zone, and the diameter of each of the first through holes is greater than a diameter of each of the second through holes. A plasma processing apparatus includes the shower head structure is also provided.

Abstract: A shower head structure and a plasma processing apparatus are provided. The shower head structure includes a plate body with a first zone and a second zone on a first surface. A plurality of first through holes are in the first zone, each of the first through holes having a diameter uniform with others of the first through holes. A plurality of second through holes are in the second zone. The first zone is in connection with the second zone, and the diameter of each of the first through holes is greater than a diameter of each of the second through holes. A plasma processing apparatus includes the shower head structure is also provided.

Abstract: An EUV reflective structure includes a substrate and multiple pairs of a Si layer and a Mo layer. The Si layer includes a plurality of cavities.

Abstract: An EUV reflective structure includes a substrate and multiple pairs of a Si layer and a Mo layer. The Si layer includes a plurality of cavities.

Abstract: In a method, an aluminum body is chemically treated with at least one of an alkaline solution and an acid solution. Anode-oxidization is performed on the chemically treated aluminum body to form an aluminum oxide layer. The aluminum oxide layer is treated with hot water at a temperature more than 75° C. or steam. The aluminum oxide layer after being treated with hot water or steam includes plural columnar grains, and an average width of the columnar grains is in a range from 10 nm to 100 nm.

Abstract: The present disclosure provides a wet chemical heating system and a method of transporting wet chemical. The method includes providing a wet chemical in a conduit, heating the wet chemical by a first radiative heating unit at a first portion of the conduit, including elevating a temperature of the wet chemical at the first portion of the conduit to a first temperature greater than a second temperature of the first portion of the conduit; and dispensing the wet chemical from the conduit.

Abstract: The present disclosure provides a wet chemical heating system, including a first conduit for transporting wet chemical, a dispensing head connected to the first conduit, and a radiative heating element configured to heat the wet chemical in the first conduit and positioned at an upper stream of the dispensing head.

Abstract: An EUV reflective structure includes a substrate and multiple pairs of a Si layer and a Mo layer. The Si layer includes a plurality of cavities.

Abstract: The present disclosure provides a method for fabricating a semiconductor structure, including placing a wafer on a chuck, wherein the wafer is surrounded by a focus ring, the focus ring is supported by a first actuator, wherein the first actuator is in a cavity defined by the chuck and the edge ring, wherein the first actuator includes an outer ring disposed in the cavity, a piezoelectric layer apart from a top surface of the cavity, wherein an edge of the piezoelectric layer is fixed by the outer ring, and an inner ring disposed in the chamber at a center portion of the piezoelectric layer, performing plasma etch on a surface of the wafer, and controlling a distance between a gas distribution plate and a top surface of the focus ring to be less than a threshold value by the first actuator.

Abstract: An EUV reflective structure includes a substrate and multiple pairs of a Si layer and a Mo layer. The Si layer includes a plurality of cavities.

Abstract: The present disclosure provides an apparatus for fabricating a semiconductor structure, including a chuck, an edge ring surrounding the chuck, wherein the edge ring comprises a cavity, a focus ring adjacent to an edge of the chuck and over the edge ring, and a first actuator in the cavity of the edge ring and engaging with the focus ring.

Abstract: An apparatus includes a casing configured to be detachably mounted on a workpiece. The casing includes a first opening configured to expose a portion of the workpiece; a first support member coupled to the casing and constructed to move along a first axis through the casing and rotate around the first axis; a second support member coupled to the first support member and constructed to move along a second axis perpendicular to the first axis; an arm pivotally coupled to the second support member and constructed to rotate around a third axis perpendicular to the first axis and the second axis; and a cleaning head attached to the arm and constructed to rotate around a longitudinal axis of the arm. The casing includes a first plate and a second plate opposite to the first plate, wherein the cleaning head is configured to extend outside the casing through the first opening.

Abstract: An apparatus includes a first support member coupled to a casing and constructed to move along a first axis through the casing and rotate around the first axis, a second support member coupled to the first support member and constructed to move along a second axis perpendicular to the first axis, and an arm pivotally coupled to the second support member and constructed to rotate around a third axis perpendicular to the first axis and the second axis. The apparatus also includes a cleaning head attached to the arm and constructed to rotate around a longitudinal axis of the arm.

Abstract: The present disclosure provides a blocker plate, including a plate body having a plurality of through holes, a first zone from a center to a first radius of the plate body, having a first conductance, a second zone from the first radius to a second radius of the plate body, having a second conductance, a third zone from the second radius to a third radius of the plate body, having a third conductance, wherein the first radius is smaller than the second radius, the second radius is smaller than the third radius, and the second conductance is greater than the first conductance. A chemical vapor deposition (CVD) apparatus including the blocker plate is also disclosed.

Abstract: An apparatus for inspecting a wafer process chamber is disclosed. In one example, the apparatus includes: a sensor, a processor, and a lifetime predictor. The sensor captures information about at least one hardware part of the wafer process chamber. The processor processes the information to determine a hardware condition of the at least one hardware part. The lifetime predictor predicts an expected lifetime left for the at least one hardware part based on the hardware condition.

Abstract: The present disclosure provides an apparatus for fabricating a semiconductor structure, including a chuck, an edge ring surrounding the chuck, wherein the edge ring comprises a cavity, a focus ring adjacent to an edge of the chuck and over the edge ring, and a first actuator in the cavity of the edge ring and engaging with the focus ring.

Abstract: A shower head structure and a plasma processing apparatus are provided. The shower head structure includes a plate body with a first zone and a second zone on a first surface. A plurality of first through holes are in the first zone, each of the first through holes having a diameter uniform with others of the first through holes. A plurality of second through holes are in the second zone. The first zone is in connection with the second zone, and the diameter of each of the first through holes is greater than a diameter of each of the second through holes. A plasma processing apparatus includes the shower head structure is also provided.

Abstract: In a method, an aluminum body is chemically treated with at least one of an alkaline solution and an acid solution. Anode-oxidization is performed on the chemically treated aluminum body to form an aluminum oxide layer. The aluminum oxide layer is treated with hot water at a temperature more than 75° C. or steam. The aluminum oxide layer after being treated with hot water or steam includes plural columnar grains, and an average width of the columnar grains is in a range from 10 nm to 100 nm.

Abstract: The present disclosure provides an apparatus for fabricating a semiconductor device, including a reaction chamber having a gas inlet for receiving a gas flow, a pedestal in the reaction chamber configured to support a substrate, and a first gas distribution plate (GDP) in the reaction chamber and between the gas inlet and the pedestal, wherein the first GDP is configured to include a plurality of concentric regions arranged along a radial direction, and a plurality of first holes arranged in the concentric regions of the first GDP, an open ratio of the first GDP in an outer concentric region is greater than that in an inner concentric region proximal to the outer concentric region to redistribute the gas flow.

Abstract: The present disclosure provides a method for fabricating a magnetic semiconductor device, including receiving a semiconductor wafer, disposing the semiconductor wafer under a first electromagnetic element, wherein the first electromagnetic element comprises a primary dimension and a secondary dimension from a top view perspective, the primary dimension being greater than the secondary dimension, and displacing the semiconductor wafer along a predetermined path along the secondary dimension of the first electromagnetic element.