Abstract: Semiconductor device metallization systems and methods are disclosed. In some embodiments, a metallization system for semiconductor devices includes a mainframe, and a plurality of modules disposed proximate the mainframe. One of the plurality of modules comprises a physical vapor deposition (PVD) module and one of the plurality of modules comprises an ultraviolet light (UV) cure module.

Abstract: Atomic layer deposition (ALD) techniques typically involve briefly exposing the surface of a substrate to a precursor within an atomic layer deposition chamber, and purging the chamber with a purge gas, such as nitrogen, before exposing the substrate to a second precursor. A series of such cycles results in the deposition of microscopically thin film layers on the substrate surface that are further processed to generate a semiconductor component. In order to reduce unintended oxygen deposition, the chamber is typically evacuated to a vacuum level of 10e?06 torr-liters/second, which is suitable for the related techniques of chemical vapor deposition. However, atomic layer deposition is demonstrably more sensitive to oxygen contamination, due to the exposure of each layer to residual oxygen within the chamber. Tighter process control is achievable by performing atomic layer deposition at a higher vacuum level, not exceeding approximately 10e?06 torr-liters/second, in order to reduce oxygen contamination.