Patents by Inventor Kuang-Neng Yang
Kuang-Neng Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10811578Abstract: A LED carrier includes a substrate, a conductive layer, an adhesive layer, and a reflector. The conductive layer is disposed on the substrate, and has a bonding portion and an extending portion. The bonding portion has a top surface higher than a top surface of the extending portion. The adhesive layer covers the extending portion of the conductive layer and exposes the bonding portion of the conductive layer. The reflector is disposed over the adhesive layer. The adhesive layer has a hook portion in contact with a corner of the reflector.Type: GrantFiled: March 27, 2019Date of Patent: October 20, 2020Assignee: LEXTAR ELECTRONICS CORPORATIONInventors: Chih-Hao Lin, Chun-Peng Lin, Chang-Han Chen, Kuang-Neng Yang, Cheng-Ta Kuo
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Publication number: 20200313052Abstract: A LED carrier includes a substrate, a conductive layer, an adhesive layer, and a reflector. The conductive layer is disposed on the substrate, and has a bonding portion and an extending portion. The bonding portion has a top surface higher than a top surface of the extending portion. The adhesive layer covers the extending portion of the conductive layer and exposes the bonding portion of the conductive layer. The reflector is disposed over the adhesive layer. The adhesive layer has a hook portion in contact with a corner of the reflector.Type: ApplicationFiled: March 27, 2019Publication date: October 1, 2020Inventors: Chih-Hao LIN, Chun-Peng LIN, Chang-Han CHEN, Kuang-Neng YANG, Cheng-Ta KUO
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Patent number: 9732940Abstract: A lighting apparatus includes a wavelength converting apparatus. The wavelength converting apparatus includes a hollow tube and a wavelength converting material. The hollow tube has an accommodating chamber. The wavelength converting material is positioned in the accommodating chamber.Type: GrantFiled: July 22, 2014Date of Patent: August 15, 2017Assignee: LEXTAR ELECTRONICS CORPORATIONInventors: Kuang-Neng Yang, Kun-Hua Wu, Jo-Hsiang Chen, Tai-Hua Ho, Tzong-Liang Tsai, Chih-Hao Lin
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Patent number: 9441797Abstract: A lens device and a light source module using the same are provided. The lens device comprises a lens and a patterned light shielding layer. The lens has a middle light emitting surface and a periphery light emitting surface surrounding the middle light emitting surface. The patterned light shielding layer is formed on the periphery light emitting surface of the lens.Type: GrantFiled: March 19, 2014Date of Patent: September 13, 2016Assignee: LEXTAR ELECTRONICS CORPORATIONInventors: Chih-Min Huang, Kuang-Neng Yang, Kun-Hua Wu
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Publication number: 20150124476Abstract: A lighting apparatus includes a wavelength converting apparatus. The wavelength converting apparatus includes a hollow tube and a wavelength converting material. The hollow tube has an accommodating chamber. The wavelength converting material is positioned in the accommodating chamber.Type: ApplicationFiled: July 22, 2014Publication date: May 7, 2015Inventors: Kuang-Neng YANG, Kun-Hua WU, Jo-Hsiang CHEN, Tai-Hua HO, Tzong-Liang TSAI, Chih-Hao LIN
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Publication number: 20150062922Abstract: A lens device and a light source module using the same are provided. The lens device comprises a lens and a patterned light shielding layer. The lens has a middle light emitting surface and a periphery light emitting surface surrounding the middle light emitting surface. The patterned light shielding layer is formed on the periphery light emitting surface of the lens.Type: ApplicationFiled: March 19, 2014Publication date: March 5, 2015Applicant: Lextar Electronics CorporationInventors: Chih-Min Huang, Kuang-Neng Yang, Kun-Hua Wu
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Publication number: 20140268877Abstract: A luminous element includes a heat dissipation plate, a body, a plurality of LED chips, a first connector and a second connector. The heat dissipation plate includes a die-bonding area and a heat dissipation area opposite to the die-bonding area. The body surrounds the heat dissipation plate, and includes a first body surface and a second body surface opposite to the first body surface. The first body surface includes a concave part exposing the die-bonding area. The second body surface includes an opening exposing the heat dissipation area. The LED chips are mounted on the die-bonding area. The first and the second connectors are disposed on the body, and they can be pluggably connected to an external power source or other connectors. The LED chips are connected to the electrical input terminals in the first and the second connectors.Type: ApplicationFiled: November 12, 2013Publication date: September 18, 2014Applicant: Lextar Electronics CorporationInventors: Kuang-Neng YANG, Kun-Hua WU, Jo-Hsiang CHEN, Chih-Hao LIN, Che-Wei HSU, Tzong-Liang TSAI
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Patent number: 8791467Abstract: An embodiment of the present invention discloses a light-emitting structure having a light output power of more than 4mW at 20 mA current. Another embodiment of the present invention discloses a method of making a light-emitting structure having a light output power of more than 4mW at 20 mA current, and a layer with a thickness of 0.5 ?m˜3?m.Type: GrantFiled: May 11, 2011Date of Patent: July 29, 2014Assignee: Epistar CorporationInventor: Kuang-Neng Yang
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Publication number: 20110210330Abstract: A light emitting diode (LED) and a method of making the same are disclosed. The present invention uses a metal layer of high conductivity and high reflectivity to prevent the substrate from absorbing the light emitted. This invention also uses the bonding technology of dielectric material thin film to replace the substrate of epitaxial growth with high thermal conductivity substrate to enhance the heat dissipation of the chip, thereby increasing the performance stability of the LED, and making the LED applicable under higher current.Type: ApplicationFiled: May 11, 2011Publication date: September 1, 2011Inventor: Kuang-Neng YANG
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Patent number: 7951633Abstract: A light emitting diode (LED) and a method of making the same are disclosed. The present invention uses a metal layer of high conductivity and high reflectivity to prevent the substrate from absorbing the light emitted. This invention also uses the bonding technology of dielectric material thin film to replace the substrate of epitaxial growth with high thermal conductivity substrate to enhance the heat dissipation of the chip, thereby increasing the performance stability of the LED, and making the LED applicable under higher current.Type: GrantFiled: September 16, 2009Date of Patent: May 31, 2011Assignee: Epistar CorporationInventor: Kuang-Neng Yang
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Publication number: 20100009486Abstract: A light emitting diode (LED) and a method of making the same are disclosed. The present invention uses a metal layer of high conductivity and high reflectivity to prevent the substrate from absorbing the light emitted. This invention also uses the bonding technology of dielectric material thin film to replace the substrate of epitaxial growth with high thermal conductivity substrate to enhance the heat dissipation of the chip, thereby increasing the performance stability of the LED, and making the LED applicable under higher current.Type: ApplicationFiled: September 16, 2009Publication date: January 14, 2010Inventor: Kuang-Neng YANG
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Patent number: 7615392Abstract: A light emitting diode (LED) and a method of making the same are disclosed. The present invention uses a metal layer of high conductivity and high reflectivity to prevent the substrate from absorbing the light emitted. This invention also uses the bonding technology of dielectric material thin film to replace the substrate of epitaxial growth with high thermal conductivity substrate to enhance the heat dissipation of the chip, thereby increasing the performance stability of the LED, and making the LED applicable under higher current.Type: GrantFiled: November 7, 2005Date of Patent: November 10, 2009Assignee: Epistar CorporationInventor: Kuang-Neng Yang
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Patent number: 7129527Abstract: A light emitting diode (LED) and a method of making the same are disclosed. The present invention uses a metal layer of high conductivity and high reflectivity to prevent the substrate from absorbing the light emitted. This invention also uses the bonding technology of dielectric material thin film to replace the substrate of epitaxial growth with high thermal conductivity substrate to enhance the heat dissipation of the chip, thereby increasing the performance stability of the LED, and making the LED applicable under higher current.Type: GrantFiled: May 13, 2002Date of Patent: October 31, 2006Assignee: United Epitaxy Company LTDInventor: Kuang-Neng Yang
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Patent number: 7033949Abstract: A method for manufacturing a GaN-based light-emitting diode (LED) is provided with the following steps of: providing a substrate; forming a GaN semiconductor epitaxy layer on the substrate, the GaN semiconductor epitaxy layer further including an n-type GaN contact layer, a light-emitting layer and a p-type GaN contact layer; forming a digital penetration layer on the p-type GaN contact layer; using a multi-step dry etching method to etch the digital penetration layer, the p-type GaN contact layer, the light-emitting layer to form an n-metal forming area, etching terminating at the light-emitting layer; forming a first ohmic contact electrode on the digital penetration layer for a p-type ohmic contact layer and a second ohmic contact electrode on the n-metal forming area for an n-type ohmic contact layer; and finally, forming pads on both first and second ohmic contact electrodes.Type: GrantFiled: December 29, 2003Date of Patent: April 25, 2006Assignee: Formosa Epitaxy IncorporationInventors: Wen-How Lan, Kuang-Neng Yang, Lung-Chien Chen, Fen-Ren Chien
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Publication number: 20060057752Abstract: A light emitting diode (LED) and a method of making the same are disclosed. The present invention uses a metal layer of high conductivity and high reflectivity to prevent the substrate from absorbing the light emitted. This invention also uses the bonding technology of dielectric material thin film to replace the substrate of epitaxial growth with high thermal conductivity substrate to enhance the heat dissipation of the chip, thereby increasing the performance stability of the LED, and making the LED applicable under higher current.Type: ApplicationFiled: November 7, 2005Publication date: March 16, 2006Applicant: United Epitaxy Company, Ltd.Inventor: Kuang-Neng Yang
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Publication number: 20050145872Abstract: A nitride-based light-emitting diode is provided, including a substrate having a light extraction layer grown on the substrate, and a nitride semiconductor epitaxy layer grown on the light extraction layer. The external quantum efficiency is improved by changing the traveling path of the emitted light and by matching the refraction index between the light extraction layer and the substrate. Also, a high power nitride-based light-emitting diode having a sacrificial layer is disclosed. A sacrificial layer is used for growing a light-emitting structure, and a binding layer made of two or more metals or alloys is used to bind the grown light-emitting structure and a substrate with high thermoconductivity. The sacrificial layer is later entirely etched away with a chemical solution used in a chemical etching process, and the nitrogen epitaxy structure is placed on the substrate with high thermoconductivity so that the diode can operate at high electrical current to improve external quantum efficiency.Type: ApplicationFiled: December 29, 2003Publication date: July 7, 2005Inventors: Chao-Yi Fang, Kuang-Neng Yang, Fen-Ren Chien, Lung-Chien Chen
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Publication number: 20050148194Abstract: A method for manufacturing GaN-based light-emitting diode (LED) is provides with the following steps of: providing a substrate; forming a GaN semiconductor epitaxy layer on the substrate, the GaN semiconductor epitaxy layer further including an n-type GaN contact layer, a light-emitting layer and a p-type GaN contact layer; forming a digital penetration layer on the p-type GaN contact layer; using a mutli-step dry etching method to etch the digital penetration layer, the p-type GaN contact layer, the light-emitting layer to form an n-metal forming area, etching terminating at the light-emitting layer; forming a first ohmic contact electrode on the digital penetration layer for said p-type ohmic contact layer and a second ohmic contact electrode on the n-metal forming area for said n-type ohmic contact layer; and finally, forming pads on both said first ohmic contact electrode and said second ohmic contact electrode.Type: ApplicationFiled: December 29, 2003Publication date: July 7, 2005Inventors: Wen-How Lan, Kuang-Neng Yang, Lung-Chien Chen, Fen-Ren Chien
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Publication number: 20050040212Abstract: A method for manufacturing nitride light-emitting device is disclosed, which fixes two metallic bonding layers together in order to bond a nitride lighting structure grown on a poor thermal conductivity substrate to a high thermal conductivity substrate, then removes the poor thermal conductivity substrate by means of chemical etching, dry etching, or mechanical abrading to thereby transfer the nitride lighting structure onto that high thermal conductivity substrate. Meanwhile, by taking advantage of forming ohmic contact between a transparent conductive layer and an N-type nitride epitaxial layer, the uniformity of current distribution can be significantly improved to thereby suppress light absorption effect and heighten the lighting efficiency of the light emitting device.Type: ApplicationFiled: August 23, 2003Publication date: February 24, 2005Inventor: Kuang-Neng Yang
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Patent number: 6812067Abstract: A method for integrating a compound semiconductor with a substrate of high thermal conductivity is provided. The present invention employs a metal of low melting point, which is in the liquid state at low temperature (about 200° C.), to form a bonding layer. The method includes the step of providing a compound semiconductor structure, which includes a compound semiconductor substrate and an epitaxial layer thereon. Then, a first bonding layer is formed on the epitaxial layer. A substrate of thermal conductivity greater than that of the compound semiconductor substrate is selected. Then, a second bonding layer is formed on the substrate. The first bonding layer and the second bonding layer are pressed to form an alloy layer at low temperature.Type: GrantFiled: December 11, 2002Date of Patent: November 2, 2004Assignee: United Epitaxy Company, Ltd.Inventors: Tzer-Perng Chen, Chih-Sung Chang, Kuang-Neng Yang
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Patent number: 6786390Abstract: A LED stacking manufacturing method and its structure thereof, mainly uses a stacking method to integrate the epitaxial layer and the high-thermal-conductive substrate by twice bonding process, and the converted epitaxial layer of the temporary bonded substrate replaces the epitaxial wafer growth substrate, and the second bonded layer of the etch stop layer of the epitaxial layer is bonded with the second bonded layer of the high-thermal-conductive substrate to form an alloy layer with permanent connection, and then the temporary bonded substrate is removed, such that the process completes the integration of the epitaxial layer and the high-thermal-conductive substrate and makes the ohmic contact layer to face upward to provide a better reliability and efficiency of optical output of the LED.Type: GrantFiled: February 4, 2003Date of Patent: September 7, 2004Assignee: United Epitaxy Company Ltd.Inventors: Kuang-Neng Yang, Pai-Hsiang Wang, Chih-Sung Chang, Tzer-Perng Chen