Abstract: A LED stacking manufacturing method and its structure thereof, mainly uses a stacking method to integrate the epitaxial layer and the high-thermal-conductive substrate by twice bonding process, and the converted epitaxial layer of the temporary bonded substrate replaces the epitaxial wafer growth substrate, and the second bonded layer of the etch stop layer of the epitaxial layer is bonded with the second bonded layer of the high-thermal-conductive substrate to form an alloy layer with permanent connection, and then the temporary bonded substrate is removed, such that the process completes the integration of the epitaxial layer and the high-thermal-conductive substrate and makes the ohmic contact layer to face upward to provide a better reliability and efficiency of optical output of the LED.

Abstract: A method for manufacturing light-emitting device on non-transparent substrate includes the steps of forming a semiconductor epitaxial layer, a first conductive layer, a reflecting layer and a first conduction layer on a first substrate, and forming second conduction layer on a second substrate. Afterward, the first conduction layer and the second conduction layer is bounded by thermal pressing. The first substrate is then removed and a second conductive layer is formed to complete a light-emitting device. The light-emitting device can be incorporated with wetting layer and blocking layer to prevent inner diffusion and enhance external quantum efficiency.

Abstract: A method for manufacturing light-emitting device on non-transparent substrate includes the steps of forming a semiconductor epitaxial layer, a first conductive layer, a reflecting layer and a first conduction layer on a first substrate, and forming second conduction layer on a second substrate. Afterward, the first conduction layer and the second conduction layer is bounded by thermal pressing. The first substrate is then removed and a second conductive layer is formed to complete a light-emitting device. The light-emitting device can be incorporated with wetting layer and blocking layer to prevent inner diffusion and enhance external quantum efficiency.

Abstract: A light emitting diode (LED) and method of making the same are disclosed. The present invention uses a layer of elastic transparent adhesive material to bond a transparent substrate and a LED epitaxial structure having a light-absorbing substrate. The light absorbing substrate is then removed to form a LED having a transparent substrate. By the use of the transparent substrate, the light emitting efficiency of the LED can be significantly improved.

Abstract: A light emitting diode (LED) and method of making the same are disclosed. The present invention uses a layer of transparent adhesive material to bond a transparent substrate and a LED epitaxial structure having a light-absorbing substrate. The light absorbing substrate is then removed to form a LED having a transparent substrate. By the use of the transparent substrate, the light emitting efficiency of the LED can be significantly improved.

Abstract: The present invention is related to a method of manufacturing high efficiency LEDs. The LEDs uses a metal reflection layer to solve the problem of light absorption by the substrate, and improves the illumination. It also forms a vertical structure where the P and N ends are on the top and bottom sides of the LEDs, respectively. A vertical structure is easier for final packaging. In addition, the present invention uses a metal substrate to replace the semiconductor substrate in order to improve the heat dissipation, and enable the LEDs to operate at a higher current.

Abstract: A method for integrating a compound semiconductor with a substrate of high thermal conductivity is provided. The present invention employs a metal of low melting point, which is in the liquid state at low temperature (about 200° C.), to form a bonding layer. The method includes the step of providing a compound semiconductor structure, which includes a compound semiconductor substrate and an epitaxial layer thereon. Then, a first bonding layer is formed on the epitaxial layer. A substrate of thermal conductivity greater than that of the compound semiconductor substrate is selected. Then, a second bonding layer is formed on the substrate. The first bonding layer and the second bonding layer are pressed to form an alloy layer at low temperature.

Abstract: A light emitting diode (LED) and a method of making the same are disclosed. The present invention uses a metal layer of high conductivity and high reflectivity to prevent the substrate from absorbing the light emitted. This invention also uses the bonding technology of dielectric material thin film to replace the substrate of epitaxial growth with high thermal conductivity substrate to enhance the heat dissipation of the chip, thereby increasing the performance stability of the LED, and making the LED applicable under higher current.

Abstract: A light emitting diode (LED) is disclosed. An emitting light absorbed by a substrate can be prevented by using a metal with high conductibility and high reflectivity and a bonding process can be produced at a lower temperature and a better welding performance can be obtained by using a solder layer could be fused into a liquid-state. Furthermore, an industry standard vertical LED chip structure is provided and only, requiring a single wire bond that results in easy LED assembly and the manufacture cost can be reduced. An LED chip size can be greatly reduced and with good heat dissipation, therefore the LED has better reliability performance and can be operated at much higher current.

Abstract: A light emitting epi-layer structure which contains a temporality light absorption substrate on one side, the other side thereof can be adhered to a light absorption free transparent substrate in terms of a transparent adhesive layer which is light absorption free too. After that, the light absorption substrate portion is removed by means of an etching process. The resulted light emitting diode has significant improvement in light emitting efficiency. Moreover, the transparent conductive layer is a low resistance and high transparency layer. The current flow can thus be distributed evenly than conventional one.

Abstract: A light emitting epi-layer structure which contains a temporality light absorption substrate on one side, the other side thereof can be adhered to a light absorption free transparent substrate in terms of a transparent adhesive layer which is light absorption free too. After that, the light absorption substrate portion is removed by means of an etching process. The resulted light emitting diode has significant improvement in light emitting efficiency. Moreover, the transparent conductive layer is a low resistance and high transparency layer. The current flow can thus be distributed evenly than conventional one.

Abstract: The present invention disclosed a light emitting diode (LED) and method for manufacturing the same. The light emitting diode includes a transparent substrate connected to an epitaxial layer with absorption substrate via a transparent adhesive layer. Then, the absorption substrate is removed to form a light emitting diode with the transparent substrate. Because of the low light absorption of the transparent substrate, the present invention provides high luminescence efficiency. Furthermore, because the first metal bonding layer is electrical connected with the first ohmic contact layer by the electrode connecting channel, the voltage is decreased and the current distribution is increased in the fixed current to improve the luminous efficiency of a light emitting diode.

Abstract: The present invention disclosed a light emitting diode (LED) and method for manufacturing the same. The light emitting diode includes a transparent substrate connected to an epitaxial layer with absorption substrate via a transparent adhesive layer. Then, the absorption substrate is removed to form a light emitting diode with the transparent substrate. Because of the low light absorption of the transparent substrate, the present invention provides high luminescence efficiency. Furthermore, because the first metal bonding layer is electrical connected with the first ohmic contact layer by the electrode connecting channel, the voltage is decreased and the current distribution is increased in the fixed current to improve the luminous efficiency of a light emitting diode.

Abstract: The present invention disclosed a light emitting diode (LED) and method for manufacturing the same. The light emitting diode includes a transparent substrate connected to an epitaxial layer with absorption substrate via a transparent adhesive layer. Then, the absorption substrate is removed to form a light emitting diode with the transparent substrate. Because of the low light absorption of the transparent substrate, the present invention provides high luminescence efficiency. Furthermore, because the first metal bonding layer is electrical connected with the first ohmic contact layer by the electrode connecting channel, the voltage is decreased and the current distribution is increased in the fixed current to improve the luminous efficiency of a light emitting diode.

Abstract: A light emitting diode (LED) and method of making the same are disclosed. The present invention uses a layer of elastic transparent adhesive material to bond a transparent substrate and a LED epitaxial structure having a light-absorbing substrate. The light absorbing substrate is then removed to form a LED having a transparent substrate. By the use of the transparent substrate, the light emitting efficiency of the LED can be significantly improved.

Abstract: A light emitting diode (LED) and method of making the same are disclosed. The present invention uses a layer of transparent adhesive material to bond a transparent substrate and a LED epitaxial structure having a light-absorbing substrate. The light absorbing substrate is then removed to form a LED having a transparent substrate. By the use of the transparent substrate, the light emitting efficiency of the LED can be significantly improved.

Abstract: A method of making a light emitting diode (LED) is disclosed. An emitting light absorbed by a substrate can be prevented by using a metal with high conductivity and high reflectivity and a bonding process can be produced at a lower temperature and a better welding performance can be obtained by using a solder layer could be fused into a liquid-state. Furthermore, an industry standard vertical LED chip structure is provided and only requiring a single wire bond that results in easy LED assembly and the manufacture cost can be reduced. An LED chip size can be greatly reduced and with good heat dissipation, therefore the LED has better reliability performance and can be operated at much higher current.