Abstract: A magnetic tunnel junction (MTJ) device includes a reference layer having a surface, a tunnel insulating layer formed over the surface of the reference layer, a free layer formed over the tunnel insulating layer, and a magnetic field providing layer formed over the free layer. A magnetization direction in each of the reference layer and the free layer is substantially perpendicular to the surface. The magnetic field providing layer is configured to provide a lateral magnetic field in the free layer, the lateral magnetic field being substantially parallel to the surface.

Abstract: A magnetic shift register includes a first supporting layer, a second supporting layer, a first pinning material layer, and at least one magnetic memory track. The first supporting layer has trenches on a first surface extending along a first direction. The second supporting layer is filled in the trenches, wherein the first support layer and the second support layer have at least a portion substantially equal in height. The first pinning material layer is disposed between the first supporting layer and the second supporting layer, wherein a plurality of end surfaces of the first pinning material layer are exposed on the first surface. The magnetic memory track extending along a second direction on the first surface is disposed over the first support layer, the first pinning material layer, and the second support layer, wherein the second direction is not the same or perpendicular to the first direction.

Abstract: A magnetic tunnel junction device with perpendicular magnetization including a reference layer, a tunneling dielectric layer, a free layer and a capping layer is provided. The tunneling dielectric layer covers on the reference layer. The free layer covers on the tunneling dielectric layer. The capping layer is consisted of magnesium, aluminum and oxygen, and disposed on the free layer.

Abstract: A magnetic device includes a substrate, a sensing block and a repair layer. The substrate has a bottom electrode, a registration layer and a barrier layer disposed on the registration layer. The sensing block is patterned to distribute on the barrier layer. The repair layer is disposed substantially on the barrier layer, wherein the barrier layer is configured to have a tunneling effect when a bias voltage exists between the sensing block and the registration layer.

Abstract: A magnetic device includes a substrate, a sensing block and a repair layer. The substrate has a bottom electrode, a registration layer and a barrier layer disposed on the registration layer. The sensing block is patterned to distribute on the barrier layer. The repair layer is disposed substantially on the barrier layer, wherein the barrier layer is configured to have a tunneling effect when a bias voltage exists between the sensing block and the registration layer.

Abstract: A tunneling magneto-resistor reference unit for sensing a magnetic field includes a first MTJ (magnetic tunneling junction) device and a second MTJ device connected in parallel. The first MTJ device has a first pinned layer having a first pinned magnetization at a pinned direction, and a first free layer having a first free magnetization parallel to the pinned direction in a zero magnetic field. The second MTJ device has a second pinned layer having a second pinned magnetization at the pinned direction, and a second free layer having a second free magnetization anti-parallel to the pinned direction in a zero magnetic field. Major axes of the first and second MTJ devices have an angle of 45 degrees to a direction of an external magnetic field when sensed.

Abstract: A magnetic tunnel junction device with perpendicular magnetization including a reference layer, a tunneling dielectric layer, a free layer and a capping layer is provided. The tunneling dielectric layer covers on the reference layer. The free layer covers on the tunneling dielectric layer. The capping layer is consisted of magnesium, aluminum and oxygen, and disposed on the free layer.

Abstract: A magnetic device includes a substrate, a sensing block and a repair layer. The substrate has a registration layer and a barrier layer disposed on the registration layer. The sensing block is patterned to distribute on the barrier layer. The repair layer is disposed substantially on the barrier layer, wherein the barrier layer is configured to have a tunneling effect when a bias voltage exists between the sensing block and the registration layer.

Abstract: A magnetic device includes a substrate, a sensing block and a repair layer. The substrate has a registration layer and a barrier layer disposed on the registration layer. The sensing block is patterned to distribute on the barrier layer. The repair layer is disposed substantially on the barrier layer, wherein the barrier layer is configured to have a tunneling effect when a bias voltage exists between the sensing block and the registration layer.

Abstract: A magnetic tunnel junction (MTJ) device includes a reference layer having a surface, a tunnel insulating layer formed over the surface of the reference layer, a free layer formed over the tunnel insulating layer, and a magnetic field providing layer formed over the free layer. A magnetization direction in each of the reference layer and the free layer is substantially perpendicular to the surface. The magnetic field providing layer is configured to provide a lateral magnetic field in the free layer, the lateral magnetic field being substantially parallel to the surface.

Abstract: A magnetic tunnel junction (MTJ) device includes a reference layer having a surface, a tunnel insulating layer formed over the surface of the reference layer, and a free layer formed over the tunnel insulating layer. A magnetization direction in each of the reference layer and the free layer is substantially perpendicular to the surface. A dimension of the reference layer in a horizontal direction substantially parallel to the surface is larger than a dimension of the free layer in the horizontal direction.

Abstract: A magnetic sensor suitable for sensing an external magnetic field includes a magnetic tunnel junction (MTJ) device. The MTJ device is used to sense an out-of-plane (Z-axis) component of the external magnetic field at a perpendicular direction to the MTJ device. The MTJ device includes a first pinned magnetic layer, a tunnel layer and a magnetic sensing layer. The first pinned magnetic layer has a pinned magnetization perpendicular to the first pinned magnetic layer. The tunnel layer is disposed on the first pinned magnetic layer. The magnetic sensing layer is disposed on the tunnel layer. The magnetic sensing layer has a critical thickness set to be within a range having a superparamagnetic property, in which an out-of-plane (Z-axis) magnetic sensitivity is larger than an in-plane (X-axis, Y-axis) magnetic sensitivity. The first pinned magnetic layer, the tunnel layer and the magnetic sensing layer are stacked in a forward sequence or a reverse sequence.

Abstract: Provided is a perpendicularly magnetized magnetic tunnel junction device including at least one multi-layer. The multi-layer includes a first metal oxide layer, a first ferromagnetic layer, a first modified layer and a second ferromagnetic layer. The first ferromagnetic layer is located on the first metal oxide layer, and the second ferromagnetic layer is located on the first ferromagnetic layer. The first modified layer is sandwiched between the first ferromagnetic layer and the second ferromagnetic layer.

Abstract: A top-pinned magnetic tunnel junction device with perpendicular magnetization, including a bottom electrode, a non-ferromagnetic spacer, a free layer, a tunneling barrier, a synthetic antiferromagnetic reference layer and a top electrode, is provided. The non-ferromagnetic spacer is located on the bottom electrode. The free layer is located on the non-ferromagnetic spacer. The tunnel insulator is located on the free layer. The synthetic antiferromagnetic reference layer is located on the tunneling barrier. The synthetic antiferromagnetic reference layer includes a top reference layer located on the tunneling barrier, a middle reference layer located on the bottom reference layer and a bottom reference layer located on the tunneling barrier. The magnetization of the top reference layer is larger than that of the bottom reference layer. The top electrode is located on the synthetic antiferromagnetic reference layer.

Abstract: A tunneling magneto-resistor reference unit for sensing a magnetic field includes a first MTJ (magnetic tunneling junction) device and a second MTJ device connected in parallel. The first MTJ device has a first pinned layer having a first pinned magnetization at a pinned direction, and a first free layer having a first free magnetization parallel to the pinned direction in a zero magnetic field. The second MTJ device has a second pinned layer having a second pinned magnetization at the pinned direction, and a second free layer having a second free magnetization anti-parallel to the pinned direction in a zero magnetic field. Major axes of the first and second MTJ devices have an angle of 45 degrees to a direction of an external magnetic field when sensed.

Abstract: A magnetic shift register includes a first supporting layer, a second supporting layer, a first pinning material layer, and at least one magnetic memory track. The first supporting layer has trenches on a first surface extending along a first direction. The second supporting layer is filled in the trenches, wherein the first support layer and the second support layer have at least a portion substantially equal in height. The first pinning material layer is disposed between the first supporting layer and the second supporting layer, wherein a plurality of end surfaces of the first pinning material layer are exposed on the first surface. The magnetic memory track extending along a second direction on the first surface is disposed over the first support layer, the first pinning material layer, and the second support layer, wherein the second direction is not the same or perpendicular to the first direction.

Abstract: A magnetic sensor suitable for sensing an external magnetic field includes a magnetic tunnel junction (MTJ) device. The MTJ device is used to sense an out-of-plane (Z-axis) component of the external magnetic field at a perpendicular direction to the MTJ device. The MTJ device includes a first pinned magnetic layer, a tunnel layer and a magnetic sensing layer. The first pinned magnetic layer has a pinned magnetization perpendicular to the first pinned magnetic layer. The tunnel layer is disposed on the first pinned magnetic layer. The magnetic sensing layer is disposed on the tunnel layer. The magnetic sensing layer has a critical thickness to be at a superparamagnetic range, in which an out-of-plane (Z-axis) magnetic sensitivity is larger than an in-plane (X-axis, Y-axis) magnetic sensitivity. The first pinned magnetic layer, the tunnel layer and the magnetic sensing layer are stacked in a forward sequence or a reverse sequence.

Abstract: A reader for magnetic shift register is provided. The reader includes a magnetic reference layer, a tunneling layer, a magnetic canceling layer and an isolated layer. The magnetic reference layer and the magnetic canceling layer are respectively configured at different sides of a magnetic track for providing anti-parallel magnetic fields. The magnetic reference layer overlaps the magnetic canceling layer in a perpendicular direction of the magnetic track. The magnetic reference layer electrically connects to a readout circuit. The magnetic canceling layer is floating. The tunneling layer is configured between the magnetic reference layer and the magnetic track for providing a magnetic tunnel junction (MTJ). The isolated layer is configured between the magnetic canceling layer and the magnetic track for avoiding a current in the magnetic track from tunneling to the magnetic canceling layer.

Abstract: A reader for magnetic shift register is provided. The reader includes a magnetic reference layer, a tunneling layer, a magnetic canceling layer and an isolated layer. The magnetic reference layer and the magnetic canceling layer are respectively configured at different sides of a magnetic track for providing anti-parallel magnetic fields. The magnetic reference layer overlaps the magnetic canceling layer in a perpendicular direction of the magnetic track. The magnetic reference layer electrically connects to a readout circuit. The magnetic canceling layer is floating. The tunneling layer is configured between the magnetic reference layer and the magnetic track for providing a magnetic tunnel junction (MTJ). The isolated layer is configured between the magnetic canceling layer and the magnetic track for avoiding a current in the magnetic track from tunneling to the magnetic canceling layer.

Abstract: A magnetic shift register memory includes a magnetic track and a reference magnetic region. The magnetic track has multiple magnetic domains. Each of the magnetic domains stores one bit data. One end of the magnetic domains is set with a first data injection domain for storing a first data, and a second data injection domain is located adjacent to the first data injection domain. The reference magnetic region corresponding to the second data injection region is implemented at a side of the magnetic track for storing a second data.